JP4529215B2 - 窒化物半導体の成長方法 - Google Patents

窒化物半導体の成長方法 Download PDF

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Publication number
JP4529215B2
JP4529215B2 JP2000017980A JP2000017980A JP4529215B2 JP 4529215 B2 JP4529215 B2 JP 4529215B2 JP 2000017980 A JP2000017980 A JP 2000017980A JP 2000017980 A JP2000017980 A JP 2000017980A JP 4529215 B2 JP4529215 B2 JP 4529215B2
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Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
protective film
substrate
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Expired - Fee Related
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JP2000017980A
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English (en)
Japanese (ja)
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JP2001196700A (ja
JP2001196700A5 (enExample
Inventor
徳也 小崎
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Nichia Corp
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Nichia Corp
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Priority to JP2000017980A priority Critical patent/JP4529215B2/ja
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Publication of JP2001196700A5 publication Critical patent/JP2001196700A5/ja
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  • Semiconductor Lasers (AREA)
JP2000017980A 1999-10-29 2000-01-25 窒化物半導体の成長方法 Expired - Fee Related JP4529215B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000017980A JP4529215B2 (ja) 1999-10-29 2000-01-25 窒化物半導体の成長方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31037499 1999-10-29
JP11-310374 1999-10-29
JP2000017980A JP4529215B2 (ja) 1999-10-29 2000-01-25 窒化物半導体の成長方法

Publications (3)

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JP2001196700A JP2001196700A (ja) 2001-07-19
JP2001196700A5 JP2001196700A5 (enExample) 2007-03-01
JP4529215B2 true JP4529215B2 (ja) 2010-08-25

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JP2000017980A Expired - Fee Related JP4529215B2 (ja) 1999-10-29 2000-01-25 窒化物半導体の成長方法

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038957A1 (fr) * 2001-10-29 2003-05-08 Sharp Kabushiki Kaisha Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
KR20050062832A (ko) * 2003-12-18 2005-06-28 삼성코닝 주식회사 발광 소자용 질화물 반도체 템플레이트 제조 방법
JP4806999B2 (ja) * 2004-11-29 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法
JP2008141187A (ja) * 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
WO2008147116A2 (en) * 2007-05-30 2008-12-04 Jusung Engineering Co., Ltd Solar cell and method of fabricating the same
KR101426941B1 (ko) 2007-05-30 2014-08-06 주성엔지니어링(주) 태양전지 및 그의 제조방법
JP2009164345A (ja) * 2008-01-07 2009-07-23 Sumitomo Electric Ind Ltd 半導体デバイスの製造方法
KR101101133B1 (ko) 2008-06-03 2012-01-05 삼성엘이디 주식회사 질화물 단결정 성장 방법 및 질화물 반도체 발광소자제조방법
JP5031674B2 (ja) * 2008-06-09 2012-09-19 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH10326912A (ja) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd 無転位ＧａＮ基板の製造方法及びＧａＮ基材
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
JPH1143398A (ja) * 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
AU2795699A (en) * 1998-02-27 1999-09-15 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
JP4742399B2 (ja) * 1999-03-12 2011-08-10 住友化学株式会社 ３−５族化合物半導体の製造方法
JP2001148544A (ja) * 1999-09-10 2001-05-29 Sharp Corp 半導体発光素子

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JP2001196700A (ja) 2001-07-19

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