JP2001196700A5 - - Google Patents
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- JP2001196700A5 JP2001196700A5 JP2000017980A JP2000017980A JP2001196700A5 JP 2001196700 A5 JP2001196700 A5 JP 2001196700A5 JP 2000017980 A JP2000017980 A JP 2000017980A JP 2000017980 A JP2000017980 A JP 2000017980A JP 2001196700 A5 JP2001196700 A5 JP 2001196700A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000017980A JP4529215B2 (ja) | 1999-10-29 | 2000-01-25 | 窒化物半導体の成長方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31037499 | 1999-10-29 | ||
| JP11-310374 | 1999-10-29 | ||
| JP2000017980A JP4529215B2 (ja) | 1999-10-29 | 2000-01-25 | 窒化物半導体の成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001196700A JP2001196700A (ja) | 2001-07-19 |
| JP2001196700A5 true JP2001196700A5 (enExample) | 2007-03-01 |
| JP4529215B2 JP4529215B2 (ja) | 2010-08-25 |
Family
ID=26566289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000017980A Expired - Fee Related JP4529215B2 (ja) | 1999-10-29 | 2000-01-25 | 窒化物半導体の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4529215B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003038957A1 (fr) * | 2001-10-29 | 2003-05-08 | Sharp Kabushiki Kaisha | Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur |
| US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
| US7485902B2 (en) * | 2002-09-18 | 2009-02-03 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
| KR20050062832A (ko) * | 2003-12-18 | 2005-06-28 | 삼성코닝 주식회사 | 발광 소자용 질화물 반도체 템플레이트 제조 방법 |
| JP4806999B2 (ja) * | 2004-11-29 | 2011-11-02 | ソニー株式会社 | ＧａＮ系化合物半導体から成る下地層の形成方法 |
| JP2008141187A (ja) * | 2006-11-09 | 2008-06-19 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ装置 |
| WO2008147116A2 (en) * | 2007-05-30 | 2008-12-04 | Jusung Engineering Co., Ltd | Solar cell and method of fabricating the same |
| KR101426941B1 (ko) | 2007-05-30 | 2014-08-06 | 주성엔지니어링(주) | 태양전지 및 그의 제조방법 |
| JP2009164345A (ja) * | 2008-01-07 | 2009-07-23 | Sumitomo Electric Ind Ltd | 半導体デバイスの製造方法 |
| KR101101133B1 (ko) | 2008-06-03 | 2012-01-05 | 삼성엘이디 주식회사 | 질화물 단결정 성장 방법 및 질화물 반도체 발광소자제조방법 |
| JP5031674B2 (ja) * | 2008-06-09 | 2012-09-19 | シャープ株式会社 | 窒化物半導体レーザ素子および窒化物半導体レーザ素子の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69633203T2 (de) * | 1995-09-18 | 2005-09-01 | Hitachi, Ltd. | Halbleiterlaservorrichtungen |
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| JPH10326912A (ja) * | 1997-03-25 | 1998-12-08 | Mitsubishi Cable Ind Ltd | 無転位ＧａＮ基板の製造方法及びＧａＮ基材 |
| JPH11191657A (ja) * | 1997-04-11 | 1999-07-13 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法及び窒化物半導体素子 |
| JPH1143398A (ja) * | 1997-07-22 | 1999-02-16 | Mitsubishi Cable Ind Ltd | ＧａＮ系結晶成長用基板およびその用途 |
| AU2795699A (en) * | 1998-02-27 | 1999-09-15 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby |
| JP4742399B2 (ja) * | 1999-03-12 | 2011-08-10 | 住友化学株式会社 | ３−５族化合物半導体の製造方法 |
| JP2001148544A (ja) * | 1999-09-10 | 2001-05-29 | Sharp Corp | 半導体発光素子 |
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2000
- 2000-01-25 JP JP2000017980A patent/JP4529215B2/ja not_active Expired - Fee Related