JP2000277437A5 - - Google Patents
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- Publication number
- JP2000277437A5 JP2000277437A5 JP1999080288A JP8028899A JP2000277437A5 JP 2000277437 A5 JP2000277437 A5 JP 2000277437A5 JP 1999080288 A JP1999080288 A JP 1999080288A JP 8028899 A JP8028899 A JP 8028899A JP 2000277437 A5 JP2000277437 A5 JP 2000277437A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- substrate
- protective film
- growth
- dislocations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 150000004767 nitrides Chemical class 0.000 description 674
- 239000004065 semiconductor Substances 0.000 description 674
- 239000010408 film Substances 0.000 description 330
- 239000000758 substrate Substances 0.000 description 296
- 230000001681 protective effect Effects 0.000 description 207
- 230000012010 growth Effects 0.000 description 169
- 238000000034 method Methods 0.000 description 111
- 239000010410 layer Substances 0.000 description 76
- 239000007789 gas Substances 0.000 description 47
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 42
- 230000002829 reductive effect Effects 0.000 description 42
- 229910052594 sapphire Inorganic materials 0.000 description 42
- 239000010980 sapphire Substances 0.000 description 42
- 239000010409 thin film Substances 0.000 description 41
- 239000012535 impurity Substances 0.000 description 39
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 30
- 238000005530 etching Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 23
- 239000002994 raw material Substances 0.000 description 23
- 229910021529 ammonia Inorganic materials 0.000 description 20
- 238000003776 cleavage reaction Methods 0.000 description 17
- 239000011777 magnesium Substances 0.000 description 17
- 230000007017 scission Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 229910052749 magnesium Inorganic materials 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000005136 cathodoluminescence Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 238000005336 cracking Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910052596 spinel Inorganic materials 0.000 description 7
- 239000011029 spinel Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08028899A JP4288743B2 (ja) | 1999-03-24 | 1999-03-24 | 窒化物半導体の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08028899A JP4288743B2 (ja) | 1999-03-24 | 1999-03-24 | 窒化物半導体の成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000277437A JP2000277437A (ja) | 2000-10-06 |
| JP2000277437A5 true JP2000277437A5 (enExample) | 2006-05-18 |
| JP4288743B2 JP4288743B2 (ja) | 2009-07-01 |
Family
ID=13714099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08028899A Expired - Fee Related JP4288743B2 (ja) | 1999-03-24 | 1999-03-24 | 窒化物半導体の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4288743B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368681B2 (en) | 2001-07-24 | 2016-06-14 | Nichia Corporation | Semiconductor light emitting device |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3587081B2 (ja) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子 |
| JP3555500B2 (ja) | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体及びその製造方法 |
| US6580098B1 (en) | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| JP4432180B2 (ja) | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体 |
| JP2001185493A (ja) | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子 |
| CN1213462C (zh) | 2000-03-14 | 2005-08-03 | 丰田合成株式会社 | 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件 |
| JP2001267242A (ja) | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体及びその製造方法 |
| TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
| JP2001313259A (ja) | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子 |
| US8140859B1 (en) | 2000-07-21 | 2012-03-20 | The Directv Group, Inc. | Secure storage and replay of media programs using a hard-paired receiver and storage device |
| US7619261B2 (en) | 2000-08-07 | 2009-11-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| EP1367150B1 (en) | 2001-02-14 | 2009-08-19 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
| US6984841B2 (en) | 2001-02-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting element and production thereof |
| JP4936598B2 (ja) * | 2001-02-15 | 2012-05-23 | シャープ株式会社 | 窒化物半導体発光素子とその製法 |
| JP4797257B2 (ja) * | 2001-02-22 | 2011-10-19 | ソニー株式会社 | 半導体素子の作製方法 |
| JP3679720B2 (ja) | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
| JP2002280314A (ja) | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子 |
| JP2004262757A (ja) * | 2001-04-24 | 2004-09-24 | Sony Corp | 窒化物半導体、半導体素子およびこれらの製造方法 |
| JP4854133B2 (ja) * | 2001-05-11 | 2012-01-18 | シャープ株式会社 | 窒化物半導体レーザ素子とこれを含む光学装置 |
| JP3696182B2 (ja) * | 2001-06-06 | 2005-09-14 | 松下電器産業株式会社 | 半導体レーザ素子 |
| JP4656782B2 (ja) * | 2001-09-12 | 2011-03-23 | シャープ株式会社 | 窒化物半導体レーザ素子とその半導体光学装置 |
| JP3690326B2 (ja) | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| KR101086155B1 (ko) * | 2002-12-16 | 2011-11-25 | 독립행정법인 과학기술진흥기구 | 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장 |
| WO2005018008A1 (ja) | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
| JP4540347B2 (ja) | 2004-01-05 | 2010-09-08 | シャープ株式会社 | 窒化物半導体レーザ素子及び、その製造方法 |
| US7157297B2 (en) | 2004-05-10 | 2007-01-02 | Sharp Kabushiki Kaisha | Method for fabrication of semiconductor device |
| JP2005322786A (ja) * | 2004-05-10 | 2005-11-17 | Sharp Corp | 窒化物半導体素子及びその製造方法 |
| JP3833674B2 (ja) | 2004-06-08 | 2006-10-18 | 松下電器産業株式会社 | 窒化物半導体レーザ素子 |
| JP4651312B2 (ja) | 2004-06-10 | 2011-03-16 | シャープ株式会社 | 半導体素子の製造方法 |
| JP5260831B2 (ja) * | 2006-01-05 | 2013-08-14 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板の製造方法および半導体装置の製造方法 |
| JP4807081B2 (ja) * | 2006-01-16 | 2011-11-02 | ソニー株式会社 | ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法 |
| JP4146881B2 (ja) * | 2007-03-20 | 2008-09-10 | シャープ株式会社 | 窒化物半導体発光素子およびエピウエハとその製造方法 |
| JP2011223017A (ja) * | 2011-06-10 | 2011-11-04 | Sony Corp | 半導体素子の作製方法 |
| CN113632200B (zh) * | 2019-03-01 | 2025-06-03 | 加利福尼亚大学董事会 | 平坦化外延横向生长层上的表面的方法 |
-
1999
- 1999-03-24 JP JP08028899A patent/JP4288743B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368681B2 (en) | 2001-07-24 | 2016-06-14 | Nichia Corporation | Semiconductor light emitting device |
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