JP4288743B2 - 窒化物半導体の成長方法 - Google Patents

窒化物半導体の成長方法 Download PDF

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Publication number
JP4288743B2
JP4288743B2 JP08028899A JP8028899A JP4288743B2 JP 4288743 B2 JP4288743 B2 JP 4288743B2 JP 08028899 A JP08028899 A JP 08028899A JP 8028899 A JP8028899 A JP 8028899A JP 4288743 B2 JP4288743 B2 JP 4288743B2
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nitride semiconductor
substrate
growth
protective film
grown
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Japanese (ja)
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JP2000277437A (ja
JP2000277437A5 (enExample
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慎一 長濱
徳也 小崎
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP08028899A 1999-03-24 1999-03-24 窒化物半導体の成長方法 Expired - Fee Related JP4288743B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP08028899A JP4288743B2 (ja) 1999-03-24 1999-03-24 窒化物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08028899A JP4288743B2 (ja) 1999-03-24 1999-03-24 窒化物半導体の成長方法

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Publication Number Publication Date
JP2000277437A JP2000277437A (ja) 2000-10-06
JP2000277437A5 JP2000277437A5 (enExample) 2006-05-18
JP4288743B2 true JP4288743B2 (ja) 2009-07-01

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JP08028899A Expired - Fee Related JP4288743B2 (ja) 1999-03-24 1999-03-24 窒化物半導体の成長方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8140859B1 (en) 2000-07-21 2012-03-20 The Directv Group, Inc. Secure storage and replay of media programs using a hard-paired receiver and storage device

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
CN1213462C (zh) 2000-03-14 2005-08-03 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
US6984841B2 (en) 2001-02-15 2006-01-10 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and production thereof
JP4936598B2 (ja) * 2001-02-15 2012-05-23 シャープ株式会社 窒化物半導体発光素子とその製法
JP4797257B2 (ja) * 2001-02-22 2011-10-19 ソニー株式会社 半導体素子の作製方法
JP3679720B2 (ja) 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP2004262757A (ja) * 2001-04-24 2004-09-24 Sony Corp 窒化物半導体、半導体素子およびこれらの製造方法
JP4854133B2 (ja) * 2001-05-11 2012-01-18 シャープ株式会社 窒化物半導体レーザ素子とこれを含む光学装置
JP3696182B2 (ja) * 2001-06-06 2005-09-14 松下電器産業株式会社 半導体レーザ素子
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP4656782B2 (ja) * 2001-09-12 2011-03-23 シャープ株式会社 窒化物半導体レーザ素子とその半導体光学装置
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
WO2005018008A1 (ja) 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
JP4540347B2 (ja) 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
US7157297B2 (en) 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
JP2005322786A (ja) * 2004-05-10 2005-11-17 Sharp Corp 窒化物半導体素子及びその製造方法
JP3833674B2 (ja) 2004-06-08 2006-10-18 松下電器産業株式会社 窒化物半導体レーザ素子
JP4651312B2 (ja) 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
JP5260831B2 (ja) * 2006-01-05 2013-08-14 古河機械金属株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板の製造方法および半導体装置の製造方法
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
JP4146881B2 (ja) * 2007-03-20 2008-09-10 シャープ株式会社 窒化物半導体発光素子およびエピウエハとその製造方法
JP2011223017A (ja) * 2011-06-10 2011-11-04 Sony Corp 半導体素子の作製方法
CN113632200B (zh) * 2019-03-01 2025-06-03 加利福尼亚大学董事会 平坦化外延横向生长层上的表面的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8140859B1 (en) 2000-07-21 2012-03-20 The Directv Group, Inc. Secure storage and replay of media programs using a hard-paired receiver and storage device

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