JP4522166B2 - 露光方法 - Google Patents
露光方法 Download PDFInfo
- Publication number
- JP4522166B2 JP4522166B2 JP2004191805A JP2004191805A JP4522166B2 JP 4522166 B2 JP4522166 B2 JP 4522166B2 JP 2004191805 A JP2004191805 A JP 2004191805A JP 2004191805 A JP2004191805 A JP 2004191805A JP 4522166 B2 JP4522166 B2 JP 4522166B2
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- JP
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- Prior art keywords
- exposure
- exposure mask
- distance
- mask
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Description
101 マスク母材
102 遮光膜
104 マスク支持体
105 薄膜部
106 透明領域部
200 近接場露光装置
201 フィードバック制御部
206 被露光物
207 ステージ
208 圧力調整容器
209 圧力調整装置
210 露光光源
213 電極パッド
214 距離測定装置
Claims (1)
- 弾性変形可能な保持部材と、該保持部材上に設けられた開口パターンを有する遮光膜と、アライメントマークと、を備えた露光用マスクを撓ませ、被露光物に接触させた状態で露光を行う露光方法において、
前記露光用マスクを撓ませる前に該露光用マスクと前記被露光物との距離を検知する工程と、
前記露光用マスクを撓ませて該露光用マスクを前記露光物に接触させ、前記アライメントマークの位置を計測して、前記開口パターンの変形量を求める工程と、
前記露光用マスクを前記露光物より離間させた後、前記開口パターンの変形量を考慮して、該開口パターンの倍率を調整する距離まで、再度、前記露光用マスクを前記露光物に近づける工程と、
前記露光用マスクを前記露光物に接触させて露光を行う工程と、を有する、ことを特徴とする露光方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004191805A JP4522166B2 (ja) | 2004-06-29 | 2004-06-29 | 露光方法 |
US10/554,993 US7740992B2 (en) | 2004-06-29 | 2005-06-24 | Exposure apparatus, exposure method, and exposure mask |
KR1020067027503A KR100850390B1 (ko) | 2004-06-29 | 2005-06-24 | 노광장치, 노광방법 및 노광마스크 |
CN2005800217559A CN1977360B (zh) | 2004-06-29 | 2005-06-24 | 曝光设备、曝光方法 |
EP05755684A EP1782456A4 (en) | 2004-06-29 | 2005-06-24 | EXPOSURE DEVICE, EXPOSURE METHOD AND EXPOSURE MASK |
PCT/JP2005/012166 WO2006001520A1 (en) | 2004-06-29 | 2005-06-24 | Exposure apparatus, exposure method, and exposure mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004191805A JP4522166B2 (ja) | 2004-06-29 | 2004-06-29 | 露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006013362A JP2006013362A (ja) | 2006-01-12 |
JP4522166B2 true JP4522166B2 (ja) | 2010-08-11 |
Family
ID=35780205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004191805A Expired - Fee Related JP4522166B2 (ja) | 2004-06-29 | 2004-06-29 | 露光方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7740992B2 (ja) |
EP (1) | EP1782456A4 (ja) |
JP (1) | JP4522166B2 (ja) |
KR (1) | KR100850390B1 (ja) |
CN (1) | CN1977360B (ja) |
WO (1) | WO2006001520A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9459093B2 (en) | 2014-02-20 | 2016-10-04 | Kabushiki Kaisha Toshiba | Deflection measuring device and deflection measuring method |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101545004B1 (ko) * | 2007-01-16 | 2015-08-18 | 코닌클리케 필립스 엔.브이. | 유연한 시트와 기판을 접촉시키기 위한 방법 및 시스템 |
EP2118706B1 (en) | 2007-02-06 | 2019-09-18 | Canon Kabushiki Kaisha | Imprint apparatus and process |
JP5843613B2 (ja) | 2009-01-20 | 2016-01-13 | キャボット コーポレイションCabot Corporation | シラン変性金属酸化物を含む組成物 |
JP4952764B2 (ja) * | 2009-10-19 | 2012-06-13 | 株式会社村田製作所 | 露光装置及び露光方法 |
CN103019028B (zh) * | 2012-12-14 | 2014-01-15 | 京东方科技集团股份有限公司 | 一种掩膜板及其制作方法 |
CN103309172A (zh) * | 2013-05-30 | 2013-09-18 | 京东方科技集团股份有限公司 | 曝光设备和曝光方法 |
US9588416B2 (en) * | 2014-06-26 | 2017-03-07 | Columbia University | Methods and apparatus for nanofabrication using a pliable membrane mask |
CN106933024B (zh) * | 2015-12-30 | 2020-05-01 | 上海微电子装备(集团)股份有限公司 | 一种可检测掩膜弯曲度的光刻系统及检测方法 |
CN112808549A (zh) * | 2021-02-02 | 2021-05-18 | 北京梦之墨科技有限公司 | 一种光处理设备 |
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-
2004
- 2004-06-29 JP JP2004191805A patent/JP4522166B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-24 WO PCT/JP2005/012166 patent/WO2006001520A1/en not_active Application Discontinuation
- 2005-06-24 KR KR1020067027503A patent/KR100850390B1/ko not_active IP Right Cessation
- 2005-06-24 US US10/554,993 patent/US7740992B2/en not_active Expired - Fee Related
- 2005-06-24 CN CN2005800217559A patent/CN1977360B/zh not_active Expired - Fee Related
- 2005-06-24 EP EP05755684A patent/EP1782456A4/en not_active Withdrawn
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JPS62252137A (ja) * | 1986-04-24 | 1987-11-02 | Nec Corp | X線露光用マスク |
JP2001012905A (ja) * | 1999-06-28 | 2001-01-19 | Mitsubishi Electric Corp | 露光装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9459093B2 (en) | 2014-02-20 | 2016-10-04 | Kabushiki Kaisha Toshiba | Deflection measuring device and deflection measuring method |
Also Published As
Publication number | Publication date |
---|---|
CN1977360A (zh) | 2007-06-06 |
KR20070026666A (ko) | 2007-03-08 |
US7740992B2 (en) | 2010-06-22 |
EP1782456A4 (en) | 2008-07-30 |
KR100850390B1 (ko) | 2008-08-04 |
EP1782456A1 (en) | 2007-05-09 |
JP2006013362A (ja) | 2006-01-12 |
CN1977360B (zh) | 2011-07-20 |
US20070146680A1 (en) | 2007-06-28 |
WO2006001520A1 (en) | 2006-01-05 |
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