JP4511898B2 - 半導体メモリ素子 - Google Patents
半導体メモリ素子 Download PDFInfo
- Publication number
- JP4511898B2 JP4511898B2 JP2004251960A JP2004251960A JP4511898B2 JP 4511898 B2 JP4511898 B2 JP 4511898B2 JP 2004251960 A JP2004251960 A JP 2004251960A JP 2004251960 A JP2004251960 A JP 2004251960A JP 4511898 B2 JP4511898 B2 JP 4511898B2
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- JP
- Japan
- Prior art keywords
- signal
- self
- frequency
- basic
- internal voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4068—Voltage or leakage in refresh operations
Description
200 内部電圧発生制御信号生成部
300 内部電圧発生部
Claims (5)
- セルフリフレッシュ信号に応答して、基本周期信号及び該基本周期信号の分周信号である複数の分周信号を生成し、前記基本周期信号及び前記分周信号を使用して、セルフリフレッシュ要求信号を生成するセルフリフレッシュ要求信号生成手段と、
前記基本周期信号及び前記分周信号に応答して、内部電圧発生制御信号を生成する内部電圧発生制御信号生成手段と、
前記内部電圧発生制御信号に応答して、内部電圧を生成する内部電圧発生手段とを備え、
前記内部電圧発生制御信号生成手段が、
前記基本周期信号及び複数の前記分周信号が入力される第1NANDゲートと、
前記第1NANDゲートの出力信号が入力される第1インバータと、
前記基本周期信号の反転信号及び複数の前記分周信号の反転信号が入力される第2NANDゲートと、
前記第2NANDゲートの出力信号が入力される第2インバータと、
前記第1インバータ及び前記第2インバータの出力信号が入力されるNORゲートと、
前記NORゲート出力信号を受信して、前記内部電圧発生制御信号を出力する第3インバータとで構成され、
前記内部電圧発生制御信号が、前記セルフリフレッシュ要求信号の活性化時点より前記基本周期信号の半周期前に活性化され、前記基本周期信号の非活性化時点に同期して非活性化されることを特徴とする半導体メモリ素子。 - 前記セルフリフレッシュ要求信号生成手段が、
前記セルフリフレッシュ信号を受信して、前記基本周期信号を生成する単位遅延リングオシレ−タと、
前記基本周期信号に対して、一定の倍率で周期が増加された複数の前記分周信号を生成する周波数分周部と、
前記基本周期信号及び複数の前記分周信号を受信して、周期的にパルスする前記セルフリフレッシュ要求信号を生成するパルス発生器と
を備えることを特徴とする請求項1に記載の半導体メモリ素子。 - 前記周波数分周部が、
前記基本周期信号を2分周して前記基本周期信号に比べ、周期が2倍に増加した第1分周信号を生成する第1周波数分周器と、
前記第1分周信号を2分周して前記基本周期信号に比べ、周期が4倍に増加した第2分周信号を生成する第2周波数分周器と
を備えることを特徴とする請求項2に記載の半導体メモリ素子。 - 前記パルス発生器が、
前記基本周期信号及び複数の前記分周信号が入力される第1NANDゲートと、
前記第1NANDゲートの出力信号が入力される第1インバータと、
前記第1インバータの出力信号を一定時間の間、反転遅延させる反転遅延部と、
前記第1インバータの出力信号及び前記反転遅延部の出力信号が入力される第2NANDゲートと、
前記第2NANDゲートの出力信号を受信して、前記セルフリフレッシュ要求信号を出力する第2インバータと
を備えることを特徴とする請求項2に記載の半導体メモリ素子。 - 前記反転遅延部が、
前記セルフリフレッシュ要求信号のパルス幅に相当する所定の遅延時間に対応する奇数個のインバータを備えることを特徴とする請求項4に記載の半導体メモリ素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030098443A KR100640780B1 (ko) | 2003-12-29 | 2003-12-29 | 반도체 메모리 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005196937A JP2005196937A (ja) | 2005-07-21 |
JP4511898B2 true JP4511898B2 (ja) | 2010-07-28 |
Family
ID=34698625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004251960A Expired - Fee Related JP4511898B2 (ja) | 2003-12-29 | 2004-08-31 | 半導体メモリ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7113440B2 (ja) |
JP (1) | JP4511898B2 (ja) |
KR (1) | KR100640780B1 (ja) |
TW (1) | TWI290715B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100616199B1 (ko) * | 2004-12-06 | 2006-08-25 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압 발생 제어회로 및 방법 |
KR100649973B1 (ko) * | 2005-09-14 | 2006-11-27 | 주식회사 하이닉스반도체 | 내부 전압 발생 장치 |
KR100738959B1 (ko) * | 2006-02-09 | 2007-07-12 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 센스 앰프 전원 공급 회로 및 방법 |
US7957213B2 (en) * | 2006-02-09 | 2011-06-07 | Hynix Semiconductor, Inc. | Semiconductor memory apparatus |
KR100800145B1 (ko) * | 2006-05-22 | 2008-02-01 | 주식회사 하이닉스반도체 | 셀프 리프레쉬 주기 제어 회로 및 그 방법 |
TWI447741B (zh) * | 2010-07-29 | 2014-08-01 | Winbond Electronics Corp | 動態隨機存取記憶體單元及其資料更新方法 |
KR101933636B1 (ko) | 2012-08-28 | 2018-12-28 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그의 구동방법 |
CN103730152B (zh) * | 2012-10-16 | 2016-10-05 | 华邦电子股份有限公司 | 储存媒体及其控制方法 |
US11894041B2 (en) * | 2020-12-01 | 2024-02-06 | SK Hynix Inc. | Electronic devices executing refresh operation based on adjusted internal voltage |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08241590A (ja) * | 1994-12-28 | 1996-09-17 | Samsung Electron Co Ltd | 低電力形の直流電圧発生回路 |
JP2000195257A (ja) * | 1998-12-28 | 2000-07-14 | Hyundai Electronics Ind Co Ltd | リフレッシュモ―ドでの待機電流を減少させる半導体メモリ装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100276386B1 (ko) * | 1997-12-06 | 2001-01-15 | 윤종용 | 반도체메모리장치의리프레시방법및회로 |
JP2000187981A (ja) * | 1998-12-22 | 2000-07-04 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
JP4804609B2 (ja) * | 2000-02-16 | 2011-11-02 | 富士通セミコンダクター株式会社 | セルアレイ電源の上昇を防止したメモリ回路 |
KR100631935B1 (ko) * | 2000-06-30 | 2006-10-04 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 셀프 리프레시 회로 |
JP2003317473A (ja) * | 2002-04-15 | 2003-11-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
2003
- 2003-12-29 KR KR1020030098443A patent/KR100640780B1/ko not_active IP Right Cessation
-
2004
- 2004-06-24 US US10/877,555 patent/US7113440B2/en not_active Expired - Fee Related
- 2004-06-24 TW TW093118214A patent/TWI290715B/zh not_active IP Right Cessation
- 2004-08-31 JP JP2004251960A patent/JP4511898B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08241590A (ja) * | 1994-12-28 | 1996-09-17 | Samsung Electron Co Ltd | 低電力形の直流電圧発生回路 |
JP2000195257A (ja) * | 1998-12-28 | 2000-07-14 | Hyundai Electronics Ind Co Ltd | リフレッシュモ―ドでの待機電流を減少させる半導体メモリ装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050141310A1 (en) | 2005-06-30 |
KR100640780B1 (ko) | 2006-10-31 |
JP2005196937A (ja) | 2005-07-21 |
US7113440B2 (en) | 2006-09-26 |
TW200522073A (en) | 2005-07-01 |
KR20050067459A (ko) | 2005-07-04 |
TWI290715B (en) | 2007-12-01 |
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