JP4494474B2 - プログラマブル・メモリ・ビルト・イン・セルフ・テスト（ｍｂｉｓｔ）の方法及び装置 - Google Patents

プログラマブル・メモリ・ビルト・イン・セルフ・テスト（ｍｂｉｓｔ）の方法及び装置 Download PDF

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JP4494474B2
JP4494474B2 JP2007543319A JP2007543319A JP4494474B2 JP 4494474 B2 JP4494474 B2 JP 4494474B2 JP 2007543319 A JP2007543319 A JP 2007543319A JP 2007543319 A JP2007543319 A JP 2007543319A JP 4494474 B2 JP4494474 B2 JP 4494474B2
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address
memory
test
loop
instruction
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JP2008521159A (ja
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ムカルジー，ニランジャン
ドゥ，シャオガン
チェン，ウー−タン
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メンター・グラフィクス・コーポレーション
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3187—Built-in tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31724—Test controller, e.g. BIST state machine
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318516—Test of programmable logic devices [PLDs]
    • G01R31/318519—Test of field programmable gate arrays [FPGA]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters
    • G11C2029/3602—Pattern generator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C2029/5604—Display of error information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/10—Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns 

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2007543319A 2004-11-18 2005-11-18 プログラマブル・メモリ・ビルト・イン・セルフ・テスト（ｍｂｉｓｔ）の方法及び装置 Expired - Lifetime JP4494474B2 (ja)

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US62939504P 2004-11-18 2004-11-18
US73349305P 2005-11-04 2005-11-04
PCT/US2005/042029 WO2006055862A2 (en) 2004-11-18 2005-11-18 Programmable memory built-in-self-test (mbist) method and apparatus

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JP2009185404A Division JP2009259398A (ja) 2004-11-18 2009-08-10 プログラマブル・メモリ・ビルト・イン・セルフ・テスト（ｍｂｉｓｔ）の方法及び装置

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JP2008521159A JP2008521159A (ja) 2008-06-19
JP2008521159A5 JP2008521159A5 (https=) 2008-12-18
JP4494474B2 true JP4494474B2 (ja) 2010-06-30

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JP2009185404A Pending JP2009259398A (ja) 2004-11-18 2009-08-10 プログラマブル・メモリ・ビルト・イン・セルフ・テスト（ｍｂｉｓｔ）の方法及び装置

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EP1825479A4 (en) 2008-04-16
US20060156134A1 (en) 2006-07-13
JP2009259398A (ja) 2009-11-05
JP2008521159A (ja) 2008-06-19
US7426668B2 (en) 2008-09-16
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US20060146622A1 (en) 2006-07-06
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