JP4479657B2 - 窒化ガリウム系半導体基板の製造方法 - Google Patents

窒化ガリウム系半導体基板の製造方法 Download PDF

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JP4479657B2
JP4479657B2 JP2005514909A JP2005514909A JP4479657B2 JP 4479657 B2 JP4479657 B2 JP 4479657B2 JP 2005514909 A JP2005514909 A JP 2005514909A JP 2005514909 A JP2005514909 A JP 2005514909A JP 4479657 B2 JP4479657 B2 JP 4479657B2
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gan
cleaning
etching
substrate
metal
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JPWO2005041283A1 (ja
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雅博 中山
直樹 松本
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials

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  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2005514909A 2003-10-27 2004-08-06 窒化ガリウム系半導体基板の製造方法 Expired - Lifetime JP4479657B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003365867 2003-10-27
JP2003365867 2003-10-27
PCT/JP2004/011683 WO2005041283A1 (ja) 2003-10-27 2004-08-06 窒化ガリウム系半導体基板と窒化ガリウム系半導体基板の製造方法

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JPWO2005041283A1 JPWO2005041283A1 (ja) 2007-04-26
JP4479657B2 true JP4479657B2 (ja) 2010-06-09

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US (2) US20070018284A1 (https=)
EP (1) EP1679740A4 (https=)
JP (1) JP4479657B2 (https=)
KR (1) KR20060090827A (https=)
CN (2) CN101661910B (https=)
TW (1) TW200522187A (https=)
WO (1) WO2005041283A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2014192353A (ja) * 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd 基板を処理する方法

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US8771552B2 (en) 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
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JP5157081B2 (ja) * 2006-04-24 2013-03-06 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
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JP5575372B2 (ja) * 2008-03-04 2014-08-20 日立金属株式会社 窒化ガリウム基板
JP2009272380A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
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JP4305574B1 (ja) 2009-01-14 2009-07-29 住友電気工業株式会社 Ｉｉｉ族窒化物基板、それを備える半導体デバイス、及び、表面処理されたｉｉｉ族窒化物基板を製造する方法
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP4513927B1 (ja) 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
CN102148429B (zh) * 2010-02-06 2016-03-30 清华大学 纳米光学天线阵列的制造方法
TWI443741B (zh) * 2011-01-14 2014-07-01 國立交通大學 一種平整化氮化物基板的方法
WO2013014713A1 (ja) * 2011-07-28 2013-01-31 パナソニック株式会社 表面改質半導体及びその製造方法並びに粒子配置方法
CN102569065A (zh) * 2011-12-23 2012-07-11 重庆平伟实业股份有限公司 一种二极管芯片的酸洗工艺
JP5696734B2 (ja) * 2013-03-22 2015-04-08 住友電気工業株式会社 Ｉｉｉ族窒化物結晶基板、エピタキシャル層付ｉｉｉ族窒化物結晶基板および半導体デバイス
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JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
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CN110768106B (zh) * 2018-07-26 2021-01-26 山东华光光电子股份有限公司 一种激光二极管制备方法
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Publication number Priority date Publication date Assignee Title
JP2014192353A (ja) * 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd 基板を処理する方法

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Publication number Publication date
CN101661910A (zh) 2010-03-03
TWI332236B (https=) 2010-10-21
CN101661910B (zh) 2012-07-18
CN1875465A (zh) 2006-12-06
WO2005041283A1 (ja) 2005-05-06
JPWO2005041283A1 (ja) 2007-04-26
TW200522187A (en) 2005-07-01
EP1679740A1 (en) 2006-07-12
HK1094279A1 (zh) 2007-03-23
US20070018284A1 (en) 2007-01-25
US20120135549A1 (en) 2012-05-31
EP1679740A4 (en) 2009-09-02
CN100552888C (zh) 2009-10-21
KR20060090827A (ko) 2006-08-16

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