KR20060090827A - 질화갈륨계 반도체 기판과 질화갈륨계 반도체 기판의 제조방법 - Google Patents

질화갈륨계 반도체 기판과 질화갈륨계 반도체 기판의 제조방법 Download PDF

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KR20060090827A
KR20060090827A KR1020067007108A KR20067007108A KR20060090827A KR 20060090827 A KR20060090827 A KR 20060090827A KR 1020067007108 A KR1020067007108 A KR 1020067007108A KR 20067007108 A KR20067007108 A KR 20067007108A KR 20060090827 A KR20060090827 A KR 20060090827A
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gan
etching
washing
substrate
metal
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Korean (ko)
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마사히로 나카야마
나오키 마츠모토
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스미토모덴키고교가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials

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  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020067007108A 2003-10-27 2004-08-06 질화갈륨계 반도체 기판과 질화갈륨계 반도체 기판의 제조방법 Ceased KR20060090827A (ko)

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JPJP-P-2003-00365867 2003-10-27
JP2003365867 2003-10-27

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KR20060090827A true KR20060090827A (ko) 2006-08-16

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US (2) US20070018284A1 (https=)
EP (1) EP1679740A4 (https=)
JP (1) JP4479657B2 (https=)
KR (1) KR20060090827A (https=)
CN (2) CN101661910B (https=)
TW (1) TW200522187A (https=)
WO (1) WO2005041283A1 (https=)

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Publication number Publication date
CN101661910A (zh) 2010-03-03
TWI332236B (https=) 2010-10-21
CN101661910B (zh) 2012-07-18
CN1875465A (zh) 2006-12-06
WO2005041283A1 (ja) 2005-05-06
JPWO2005041283A1 (ja) 2007-04-26
TW200522187A (en) 2005-07-01
EP1679740A1 (en) 2006-07-12
HK1094279A1 (zh) 2007-03-23
US20070018284A1 (en) 2007-01-25
US20120135549A1 (en) 2012-05-31
EP1679740A4 (en) 2009-09-02
CN100552888C (zh) 2009-10-21
JP4479657B2 (ja) 2010-06-09

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