JP4479344B2 - Soi基板のゲート酸化膜の評価方法 - Google Patents
Soi基板のゲート酸化膜の評価方法 Download PDFInfo
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- JP4479344B2 JP4479344B2 JP2004152990A JP2004152990A JP4479344B2 JP 4479344 B2 JP4479344 B2 JP 4479344B2 JP 2004152990 A JP2004152990 A JP 2004152990A JP 2004152990 A JP2004152990 A JP 2004152990A JP 4479344 B2 JP4479344 B2 JP 4479344B2
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- Prior art keywords
- oxide film
- gate oxide
- soi substrate
- electrode
- evaluating
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- 239000000758 substrate Substances 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 31
- 238000011156 evaluation Methods 0.000 claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 44
- 239000000956 alloy Substances 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 55
- 238000009792 diffusion process Methods 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
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- Thin Film Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
3 シリコン支持体(第2の電極)
5 シリコン層
7 絶縁層
9 ゲート酸化膜
11 第1の電極
13 配線
15 電源
17 電流計
Claims (5)
- シリコン支持体、該シリコン支持体の一面側に設けられた酸化膜からなる絶縁層、該絶縁層を前記シリコン支持体との間に挟んだ状態で設けられたシリコン層、及び該シリコン層の表面に設けられたゲート酸化膜を備えたSOI基板のゲート酸化膜の評価方法であり、
前記ゲート酸化膜の表面に間隔をおいて複数の第1の電極を形成し、前記シリコン支持体を第2の電極とし、前記第1の電極と前記第2の電極の間に電圧を印加し、予め設定した値の電流または電荷になったときの電圧値を計測するSOI基板のゲート酸化膜の評価方法。 - 前記第1の電極は、金属材料、合金材料、または、金属材料及び合金材料の少なくとも一方を含む混合材料からなることを特徴とする請求項1に記載のSOI基板のゲート酸化膜の評価方法。
- 前記第1の電極の厚みが100nm以上であることを特徴とする請求項1または2に記載のSOI基板のゲート酸化膜の評価方法。
- 前記印加する電界が16MV/cm以下であることを特徴とする請求項1乃至3のいずれか1項に記載のSOI基板のゲート酸化膜の評価方法。
- 前記印加する電圧を、0.1V/秒以上1V/秒以下の速度で昇圧することを特徴とする請求項1乃至4のいずれか1項に記載のSOI基板のゲート酸化膜の評価方法。
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JP2004152990A JP4479344B2 (ja) | 2004-05-24 | 2004-05-24 | Soi基板のゲート酸化膜の評価方法 |
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JP2004152990A JP4479344B2 (ja) | 2004-05-24 | 2004-05-24 | Soi基板のゲート酸化膜の評価方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005340242A JP2005340242A (ja) | 2005-12-08 |
JP4479344B2 true JP4479344B2 (ja) | 2010-06-09 |
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JP2004152990A Expired - Lifetime JP4479344B2 (ja) | 2004-05-24 | 2004-05-24 | Soi基板のゲート酸化膜の評価方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4576981B2 (ja) * | 2004-11-05 | 2010-11-10 | 信越半導体株式会社 | 半導体基板の評価方法及び半導体基板評価用素子 |
JP4770578B2 (ja) * | 2006-05-12 | 2011-09-14 | 株式会社Sumco | 評価用試料およびその製造方法、ならびに評価方法 |
JP5939947B2 (ja) * | 2012-09-27 | 2016-06-22 | トランスフォーム・ジャパン株式会社 | ショットキー型トランジスタの駆動回路 |
CN116230692A (zh) * | 2023-05-06 | 2023-06-06 | 粤芯半导体技术股份有限公司 | 一种栅介质层可靠性测试结构及测试方法 |
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- 2004-05-24 JP JP2004152990A patent/JP4479344B2/ja not_active Expired - Lifetime
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