JP4471480B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4471480B2
JP4471480B2 JP2000317991A JP2000317991A JP4471480B2 JP 4471480 B2 JP4471480 B2 JP 4471480B2 JP 2000317991 A JP2000317991 A JP 2000317991A JP 2000317991 A JP2000317991 A JP 2000317991A JP 4471480 B2 JP4471480 B2 JP 4471480B2
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Japan
Prior art keywords
mos transistor
electrode
main electrode
region
oxide film
Prior art date
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Expired - Fee Related
Application number
JP2000317991A
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English (en)
Japanese (ja)
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JP2002124681A5 (https=
JP2002124681A (ja
Inventor
肇 秋山
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000317991A priority Critical patent/JP4471480B2/ja
Priority to US09/835,445 priority patent/US6603176B2/en
Publication of JP2002124681A publication Critical patent/JP2002124681A/ja
Publication of JP2002124681A5 publication Critical patent/JP2002124681A5/ja
Application granted granted Critical
Publication of JP4471480B2 publication Critical patent/JP4471480B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/836—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising EDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000317991A 2000-10-18 2000-10-18 半導体装置 Expired - Fee Related JP4471480B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000317991A JP4471480B2 (ja) 2000-10-18 2000-10-18 半導体装置
US09/835,445 US6603176B2 (en) 2000-10-18 2001-04-17 Power semiconductor device for power integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000317991A JP4471480B2 (ja) 2000-10-18 2000-10-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2002124681A JP2002124681A (ja) 2002-04-26
JP2002124681A5 JP2002124681A5 (https=) 2006-03-16
JP4471480B2 true JP4471480B2 (ja) 2010-06-02

Family

ID=18796689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000317991A Expired - Fee Related JP4471480B2 (ja) 2000-10-18 2000-10-18 半導体装置

Country Status (2)

Country Link
US (1) US6603176B2 (https=)
JP (1) JP4471480B2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590884B2 (ja) * 2003-06-13 2010-12-01 株式会社デンソー 半導体装置およびその製造方法
EP1668703A1 (en) * 2003-09-22 2006-06-14 Koninklijke Philips Electronics N.V. Dynamic control of capacitance elements in field effect semiconductor devices
JP2007507877A (ja) * 2003-09-30 2007-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 絶縁された金属領域を備えたフィールドプレートを有する横方向薄膜ｓｏｉデバイス
JP4654574B2 (ja) * 2003-10-20 2011-03-23 トヨタ自動車株式会社 半導体装置
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
JP4864344B2 (ja) * 2005-05-16 2012-02-01 パナソニック株式会社 半導体装置
JP4863665B2 (ja) * 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
JP4984579B2 (ja) * 2006-03-10 2012-07-25 株式会社日立製作所 高耐圧半導体集積回路装置
EP1863081A3 (en) 2006-03-10 2008-03-05 Hitachi, Ltd. Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof
US7605446B2 (en) * 2006-07-14 2009-10-20 Cambridge Semiconductor Limited Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
JP4616856B2 (ja) * 2007-03-27 2011-01-19 株式会社日立製作所 半導体装置、及び半導体装置の製造方法
JP2008016863A (ja) * 2007-08-31 2008-01-24 Denso Corp 縦型ホール素子
JP4797203B2 (ja) * 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
US8803232B2 (en) 2011-05-29 2014-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
CN102683262A (zh) * 2012-04-28 2012-09-19 东南大学 一种基于绝缘体上硅的高压隔离结构
CN103117307A (zh) * 2013-01-24 2013-05-22 东南大学 一种高可靠性p型绝缘体上硅横向双扩散场效应晶体管
JP6255421B2 (ja) * 2013-01-30 2017-12-27 マイクロチップ テクノロジー インコーポレイテッドＭｉｃｒｏｃｈｉｐ Ｔｅｃｈｎｏｌｏｇｙ Ｉｎｃｏｒｐｏｒａｔｅｄ Ｅｓｄ自己保護を有するｄｍｏｓ半導体デバイスおよびそれを備えたｌｉｎバスドライバ
EP2930743B1 (en) * 2014-04-11 2016-09-21 Nxp B.V. Semiconductor isolation structure
JP6729487B2 (ja) * 2017-05-15 2020-07-22 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
US10790365B2 (en) * 2018-02-23 2020-09-29 Vanguard International Semiconductor Corporation Lateral diffused metal oxide semiconductor field effect transistor
CN112993006B (zh) * 2019-12-12 2022-08-12 珠海格力电器股份有限公司 一种终端结构、其制作方法及电子器件
JP2021129053A (ja) * 2020-02-14 2021-09-02 ローム株式会社 半導体装置
EP4174922A1 (en) * 2021-10-29 2023-05-03 Infineon Technologies Austria AG High-voltage semiconductor device
EP4220697A1 (en) 2022-01-27 2023-08-02 Infineon Technologies Austria AG Semiconductor device with trench isolation structures in a transition region and method of manufacturing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874768A (en) * 1994-06-15 1999-02-23 Nippondenso Co., Ltd. Semiconductor device having a high breakdown voltage
JP3378135B2 (ja) * 1996-02-02 2003-02-17 三菱電機株式会社 半導体装置とその製造方法
JP3575908B2 (ja) * 1996-03-28 2004-10-13 株式会社東芝 半導体装置
JP3958404B2 (ja) * 1997-06-06 2007-08-15 三菱電機株式会社 横型高耐圧素子を有する半導体装置
JP3111947B2 (ja) * 1997-10-28 2000-11-27 日本電気株式会社 半導体装置、その製造方法
US6133610A (en) * 1998-01-20 2000-10-17 International Business Machines Corporation Silicon-on-insulator chip having an isolation barrier for reliability and process of manufacture
US6150697A (en) * 1998-04-30 2000-11-21 Denso Corporation Semiconductor apparatus having high withstand voltage

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Publication number Publication date
US20020043699A1 (en) 2002-04-18
US6603176B2 (en) 2003-08-05
JP2002124681A (ja) 2002-04-26

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