JP4460741B2 - 電力用半導体素子及びその製造方法 - Google Patents

電力用半導体素子及びその製造方法 Download PDF

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Publication number
JP4460741B2
JP4460741B2 JP2000294316A JP2000294316A JP4460741B2 JP 4460741 B2 JP4460741 B2 JP 4460741B2 JP 2000294316 A JP2000294316 A JP 2000294316A JP 2000294316 A JP2000294316 A JP 2000294316A JP 4460741 B2 JP4460741 B2 JP 4460741B2
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Japan
Prior art keywords
base layer
type base
conductivity type
layer
power semiconductor
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Expired - Fee Related
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JP2000294316A
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English (en)
Japanese (ja)
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JP2002110980A (ja
JP2002110980A5 (enExample
Inventor
秀隆 服部
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000294316A priority Critical patent/JP4460741B2/ja
Priority to US09/961,248 priority patent/US6867454B2/en
Publication of JP2002110980A publication Critical patent/JP2002110980A/ja
Publication of JP2002110980A5 publication Critical patent/JP2002110980A5/ja
Application granted granted Critical
Publication of JP4460741B2 publication Critical patent/JP4460741B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2000294316A 2000-09-27 2000-09-27 電力用半導体素子及びその製造方法 Expired - Fee Related JP4460741B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000294316A JP4460741B2 (ja) 2000-09-27 2000-09-27 電力用半導体素子及びその製造方法
US09/961,248 US6867454B2 (en) 2000-09-27 2001-09-25 Power semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000294316A JP4460741B2 (ja) 2000-09-27 2000-09-27 電力用半導体素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002110980A JP2002110980A (ja) 2002-04-12
JP2002110980A5 JP2002110980A5 (enExample) 2006-03-09
JP4460741B2 true JP4460741B2 (ja) 2010-05-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000294316A Expired - Fee Related JP4460741B2 (ja) 2000-09-27 2000-09-27 電力用半導体素子及びその製造方法

Country Status (2)

Country Link
US (1) US6867454B2 (enExample)
JP (1) JP4460741B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235862B2 (en) 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
US7081663B2 (en) * 2002-01-18 2006-07-25 National Semiconductor Corporation Gate-enhanced junction varactor with gradual capacitance variation
US7161203B2 (en) * 2004-06-04 2007-01-09 Micron Technology, Inc. Gated field effect device comprising gate dielectric having different K regions
US20070128810A1 (en) * 2005-12-07 2007-06-07 Ching-Hung Kao Ultra high voltage MOS transistor device and method of making the same
EP1852916A1 (en) * 2006-05-05 2007-11-07 Austriamicrosystems AG High voltage transistor
JP5200373B2 (ja) * 2006-12-15 2013-06-05 トヨタ自動車株式会社 半導体装置
DE102008045410B4 (de) 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
WO2009122486A1 (ja) 2008-03-31 2009-10-08 三菱電機株式会社 半導体装置
JP2011159763A (ja) * 2010-01-29 2011-08-18 Toshiba Corp 電力用半導体装置
US8952458B2 (en) 2011-04-14 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer
US10256325B2 (en) * 2012-11-08 2019-04-09 Infineon Technologies Austria Ag Radiation-hardened power semiconductor devices and methods of forming them
CN103441143B (zh) * 2013-07-10 2015-09-09 电子科技大学 具有变组分混合晶体发射区的抗闩锁igbt
JP2016029707A (ja) * 2014-07-24 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置
JP2016054181A (ja) * 2014-09-03 2016-04-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子
CN107425060A (zh) * 2016-05-23 2017-12-01 株洲中车时代电气股份有限公司 新型igbt结构及其制作方法
JP7107093B2 (ja) * 2018-08-22 2022-07-27 株式会社デンソー スイッチング素子
CN111129131B (zh) * 2018-10-30 2023-09-05 株洲中车时代半导体有限公司 平面栅igbt器件
EP4053916B1 (en) * 2021-03-01 2024-07-03 Hitachi Energy Ltd Power semiconductor device
JP7688557B2 (ja) * 2021-10-14 2025-06-04 株式会社デンソー 半導体装置とその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62126668A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 半導体装置
JP2862027B2 (ja) * 1991-03-12 1999-02-24 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JPH0685433B2 (ja) * 1992-04-22 1994-10-26 尚茂 玉蟲 縦型構造のｍｏｓ制御サイリスタ
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US6117736A (en) * 1997-01-30 2000-09-12 Lsi Logic Corporation Method of fabricating insulated-gate field-effect transistors having different gate capacitances
JP4192281B2 (ja) * 1997-11-28 2008-12-10 株式会社デンソー 炭化珪素半導体装置
KR100268933B1 (ko) * 1997-12-27 2000-10-16 김영환 반도체 소자의 구조 및 제조 방법
JP3707942B2 (ja) * 1998-12-17 2005-10-19 三菱電機株式会社 半導体装置とそれを用いた半導体回路

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US6867454B2 (en) 2005-03-15
JP2002110980A (ja) 2002-04-12
US20020036311A1 (en) 2002-03-28

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