JP4439593B2 - フェルミしきい値型電界効果型トランジスタ及びその製造方法 - Google Patents

フェルミしきい値型電界効果型トランジスタ及びその製造方法 Download PDF

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JP4439593B2
JP4439593B2 JP52873297A JP52873297A JP4439593B2 JP 4439593 B2 JP4439593 B2 JP 4439593B2 JP 52873297 A JP52873297 A JP 52873297A JP 52873297 A JP52873297 A JP 52873297A JP 4439593 B2 JP4439593 B2 JP 4439593B2
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region
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source
drain
fermi
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JP2000504881A (ja
JP2000504881A5 (enExample
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デネン，マイケル・ウィリアム
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サンダーバード・テクノロジーズ，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP52873297A 1996-02-07 1997-02-04 フェルミしきい値型電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP4439593B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/597,711 US5698884A (en) 1996-02-07 1996-02-07 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
US08/597,711 1996-02-07
PCT/US1997/002108 WO1997029519A1 (en) 1996-02-07 1997-02-04 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

Publications (3)

Publication Number Publication Date
JP2000504881A JP2000504881A (ja) 2000-04-18
JP2000504881A5 JP2000504881A5 (enExample) 2004-11-11
JP4439593B2 true JP4439593B2 (ja) 2010-03-24

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JP52873297A Expired - Fee Related JP4439593B2 (ja) 1996-02-07 1997-02-04 フェルミしきい値型電界効果型トランジスタ及びその製造方法

Country Status (7)

Country Link
US (2) US5698884A (enExample)
EP (1) EP0879482B1 (enExample)
JP (1) JP4439593B2 (enExample)
KR (1) KR100499308B1 (enExample)
AU (1) AU709509B2 (enExample)
DE (1) DE69728858T2 (enExample)
WO (1) WO1997029519A1 (enExample)

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Also Published As

Publication number Publication date
US5885876A (en) 1999-03-23
EP0879482A1 (en) 1998-11-25
DE69728858T2 (de) 2005-04-21
WO1997029519A1 (en) 1997-08-14
EP0879482B1 (en) 2004-04-28
KR100499308B1 (ko) 2005-11-09
AU709509B2 (en) 1999-09-02
JP2000504881A (ja) 2000-04-18
AU1955897A (en) 1997-08-28
KR19990082088A (ko) 1999-11-15
US5698884A (en) 1997-12-16
DE69728858D1 (de) 2004-06-03

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