JP4434527B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4434527B2
JP4434527B2 JP2001241132A JP2001241132A JP4434527B2 JP 4434527 B2 JP4434527 B2 JP 4434527B2 JP 2001241132 A JP2001241132 A JP 2001241132A JP 2001241132 A JP2001241132 A JP 2001241132A JP 4434527 B2 JP4434527 B2 JP 4434527B2
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JP
Japan
Prior art keywords
cell unit
resistance
tmr
memory device
reference cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001241132A
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English (en)
Japanese (ja)
Other versions
JP2003060165A (ja
JP2003060165A5 (enExample
Inventor
啓司 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001241132A priority Critical patent/JP4434527B2/ja
Priority to TW091115699A priority patent/TWI234781B/zh
Priority to KR10-2002-0046501A priority patent/KR100518704B1/ko
Priority to US10/212,734 priority patent/US6778426B2/en
Priority to CNB021277567A priority patent/CN1280829C/zh
Publication of JP2003060165A publication Critical patent/JP2003060165A/ja
Publication of JP2003060165A5 publication Critical patent/JP2003060165A5/ja
Application granted granted Critical
Publication of JP4434527B2 publication Critical patent/JP4434527B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2001241132A 2001-08-08 2001-08-08 半導体記憶装置 Expired - Fee Related JP4434527B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001241132A JP4434527B2 (ja) 2001-08-08 2001-08-08 半導体記憶装置
TW091115699A TWI234781B (en) 2001-08-08 2002-07-15 Magnetic random access memory including memory cell unit and reference cell unit
KR10-2002-0046501A KR100518704B1 (ko) 2001-08-08 2002-08-07 자기 기억 장치
US10/212,734 US6778426B2 (en) 2001-08-08 2002-08-07 Magnetic random access memory including memory cell unit and reference cell unit
CNB021277567A CN1280829C (zh) 2001-08-08 2002-08-08 磁存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001241132A JP4434527B2 (ja) 2001-08-08 2001-08-08 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2003060165A JP2003060165A (ja) 2003-02-28
JP2003060165A5 JP2003060165A5 (enExample) 2005-08-25
JP4434527B2 true JP4434527B2 (ja) 2010-03-17

Family

ID=19071634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241132A Expired - Fee Related JP4434527B2 (ja) 2001-08-08 2001-08-08 半導体記憶装置

Country Status (5)

Country Link
US (1) US6778426B2 (enExample)
JP (1) JP4434527B2 (enExample)
KR (1) KR100518704B1 (enExample)
CN (1) CN1280829C (enExample)
TW (1) TWI234781B (enExample)

Families Citing this family (58)

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JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
US20050195673A1 (en) * 2002-07-15 2005-09-08 Yoshiaki Asao Magnetic random access memory having memory cells configured by use of tunneling magnetoresistive elements
JP4190238B2 (ja) * 2002-09-13 2008-12-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6744651B2 (en) * 2002-09-20 2004-06-01 Taiwan Semiconductor Manufacturing Company Local thermal enhancement of magnetic memory cell during programming
US6707710B1 (en) * 2002-12-12 2004-03-16 Hewlett-Packard Development Company, L.P. Magnetic memory device with larger reference cell
US6784510B1 (en) * 2003-04-16 2004-08-31 Freescale Semiconductor, Inc. Magnetoresistive random access memory device structures
US7453719B2 (en) 2003-04-21 2008-11-18 Nec Corporation Magnetic random access memory with improved data reading method
KR100615586B1 (ko) * 2003-07-23 2006-08-25 삼성전자주식회사 다공성 유전막 내에 국부적인 상전이 영역을 구비하는상전이 메모리 소자 및 그 제조 방법
EP1505656B1 (en) * 2003-08-05 2007-01-03 STMicroelectronics S.r.l. Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
DE602005009411D1 (de) * 2004-01-29 2008-10-16 Sharp Kk Halbleiterspeichervorrichtung
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US7102948B2 (en) * 2004-04-01 2006-09-05 Hewlett-Packard Development Company, L.P. Resistance change sensor
WO2005096315A2 (en) * 2004-04-01 2005-10-13 Koninklijke Philips Electronics N.V. Thermally stable reference voltage generator for mram
US7630233B2 (en) 2004-04-02 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
JP4865248B2 (ja) * 2004-04-02 2012-02-01 株式会社半導体エネルギー研究所 半導体装置
DE102004047666B4 (de) * 2004-09-30 2015-04-02 Qimonda Ag Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung
US20060092689A1 (en) * 2004-11-04 2006-05-04 Daniel Braun Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells
JP2006165535A (ja) * 2004-11-11 2006-06-22 Semiconductor Energy Lab Co Ltd 半導体装置
WO2006051996A1 (en) 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102004058132B3 (de) * 2004-12-02 2006-03-02 Infineon Technologies Ag Speicherschaltung sowie Verfahren zum Bewerten eines Speicherdatums einer CBRAM-Widerstandsspeicherzelle
JP4660249B2 (ja) * 2005-03-31 2011-03-30 株式会社東芝 磁気ランダムアクセスメモリ
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7361561B2 (en) * 2005-06-24 2008-04-22 Freescale Semiconductor, Inc. Method of making a metal gate semiconductor device
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
JP2007053229A (ja) * 2005-08-18 2007-03-01 Nec Electronics Corp 半導体記憶装置およびその製造方法
KR100735748B1 (ko) * 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
US7463507B2 (en) * 2005-11-09 2008-12-09 Ulrike Gruening-Von Schwerin Memory device with a plurality of memory cells, in particular PCM memory cells, and method for operating such a memory cell device
KR100735750B1 (ko) * 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
KR100735525B1 (ko) 2006-01-04 2007-07-04 삼성전자주식회사 상변화 메모리 장치
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
JP2008085208A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd トンネル磁気抵抗素子、磁気ヘッドおよび磁気メモリ
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
JP4568303B2 (ja) * 2007-06-19 2010-10-27 株式会社東芝 磁気ランダムアクセスメモリ
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
JP2009117006A (ja) * 2007-11-09 2009-05-28 Toshiba Corp 抵抗変化メモリ装置
JP5019223B2 (ja) * 2007-11-21 2012-09-05 株式会社東芝 半導体記憶装置
TWI328816B (en) * 2007-12-06 2010-08-11 Ind Tech Res Inst Phase change memory and method of controlling phase change memory
JP4482039B2 (ja) * 2008-01-11 2010-06-16 株式会社東芝 抵抗変化型メモリ
JP2009200123A (ja) * 2008-02-19 2009-09-03 Nec Corp 磁気ランダムアクセスメモリ
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
KR101068573B1 (ko) * 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
KR101097435B1 (ko) * 2009-06-15 2011-12-23 주식회사 하이닉스반도체 멀티 레벨을 갖는 상변화 메모리 장치 및 그 구동방법
JP2012027974A (ja) * 2010-07-22 2012-02-09 Panasonic Corp 半導体記憶装置
US8787070B2 (en) * 2011-04-13 2014-07-22 Panasonic Corporation Reference cell circuit and variable resistance nonvolatile memory device including the same
JPWO2013027347A1 (ja) * 2011-08-24 2015-03-05 パナソニック株式会社 半導体記憶装置
US8576617B2 (en) * 2011-11-10 2013-11-05 Qualcomm Incorporated Circuit and method for generating a reference level for a magnetic random access memory element
WO2017105514A1 (en) * 2015-12-18 2017-06-22 Intel Corporation Apparatus and method of in-memory computation using non-volatile arrays
JP6271655B1 (ja) * 2016-08-05 2018-01-31 株式会社東芝 不揮発性メモリ
JP2018160628A (ja) 2017-03-23 2018-10-11 東芝メモリ株式会社 記憶装置
KR102313601B1 (ko) * 2017-03-24 2021-10-15 삼성전자주식회사 메모리 장치의 동작 방법
US10141503B1 (en) * 2017-11-03 2018-11-27 International Business Machines Corporation Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication
US11532783B2 (en) * 2020-03-05 2022-12-20 Tdk Corporation Magnetic recording array, neuromorphic device, and method of controlling magnetic recording array
JP7512116B2 (ja) * 2020-07-30 2024-07-08 Tdk株式会社 磁気メモリ

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Also Published As

Publication number Publication date
JP2003060165A (ja) 2003-02-28
CN1402252A (zh) 2003-03-12
US20030031045A1 (en) 2003-02-13
US6778426B2 (en) 2004-08-17
TWI234781B (en) 2005-06-21
KR20030014613A (ko) 2003-02-19
CN1280829C (zh) 2006-10-18
KR100518704B1 (ko) 2005-10-05

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