TWI234781B - Magnetic random access memory including memory cell unit and reference cell unit - Google Patents

Magnetic random access memory including memory cell unit and reference cell unit Download PDF

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Publication number
TWI234781B
TWI234781B TW091115699A TW91115699A TWI234781B TW I234781 B TWI234781 B TW I234781B TW 091115699 A TW091115699 A TW 091115699A TW 91115699 A TW91115699 A TW 91115699A TW I234781 B TWI234781 B TW I234781B
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TW
Taiwan
Prior art keywords
unit
memory device
resistance
elements
magnetic
Prior art date
Application number
TW091115699A
Other languages
English (en)
Chinese (zh)
Inventor
Keiji Hosotani
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TWI234781B publication Critical patent/TWI234781B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW091115699A 2001-08-08 2002-07-15 Magnetic random access memory including memory cell unit and reference cell unit TWI234781B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001241132A JP4434527B2 (ja) 2001-08-08 2001-08-08 半導体記憶装置

Publications (1)

Publication Number Publication Date
TWI234781B true TWI234781B (en) 2005-06-21

Family

ID=19071634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091115699A TWI234781B (en) 2001-08-08 2002-07-15 Magnetic random access memory including memory cell unit and reference cell unit

Country Status (5)

Country Link
US (1) US6778426B2 (enExample)
JP (1) JP4434527B2 (enExample)
KR (1) KR100518704B1 (enExample)
CN (1) CN1280829C (enExample)
TW (1) TWI234781B (enExample)

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KR102313601B1 (ko) * 2017-03-24 2021-10-15 삼성전자주식회사 메모리 장치의 동작 방법
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Also Published As

Publication number Publication date
JP2003060165A (ja) 2003-02-28
CN1402252A (zh) 2003-03-12
US20030031045A1 (en) 2003-02-13
US6778426B2 (en) 2004-08-17
JP4434527B2 (ja) 2010-03-17
KR20030014613A (ko) 2003-02-19
CN1280829C (zh) 2006-10-18
KR100518704B1 (ko) 2005-10-05

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