KR100518704B1 - 자기 기억 장치 - Google Patents

자기 기억 장치 Download PDF

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Publication number
KR100518704B1
KR100518704B1 KR10-2002-0046501A KR20020046501A KR100518704B1 KR 100518704 B1 KR100518704 B1 KR 100518704B1 KR 20020046501 A KR20020046501 A KR 20020046501A KR 100518704 B1 KR100518704 B1 KR 100518704B1
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KR
South Korea
Prior art keywords
resistance
elements
tmr
data
reference cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0046501A
Other languages
English (en)
Korean (ko)
Other versions
KR20030014613A (ko
Inventor
호소따니게이지
Original Assignee
가부시끼가이샤 도시바
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Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20030014613A publication Critical patent/KR20030014613A/ko
Application granted granted Critical
Publication of KR100518704B1 publication Critical patent/KR100518704B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR10-2002-0046501A 2001-08-08 2002-08-07 자기 기억 장치 Expired - Fee Related KR100518704B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00241132 2001-08-08
JP2001241132A JP4434527B2 (ja) 2001-08-08 2001-08-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20030014613A KR20030014613A (ko) 2003-02-19
KR100518704B1 true KR100518704B1 (ko) 2005-10-05

Family

ID=19071634

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0046501A Expired - Fee Related KR100518704B1 (ko) 2001-08-08 2002-08-07 자기 기억 장치

Country Status (5)

Country Link
US (1) US6778426B2 (enExample)
JP (1) JP4434527B2 (enExample)
KR (1) KR100518704B1 (enExample)
CN (1) CN1280829C (enExample)
TW (1) TWI234781B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894521B1 (ko) * 2006-09-28 2009-04-22 후지쯔 가부시끼가이샤 터널 자기 저항 소자, 자기 헤드 및 자기 메모리

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JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
US20050195673A1 (en) * 2002-07-15 2005-09-08 Yoshiaki Asao Magnetic random access memory having memory cells configured by use of tunneling magnetoresistive elements
JP4190238B2 (ja) * 2002-09-13 2008-12-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6744651B2 (en) * 2002-09-20 2004-06-01 Taiwan Semiconductor Manufacturing Company Local thermal enhancement of magnetic memory cell during programming
US6707710B1 (en) * 2002-12-12 2004-03-16 Hewlett-Packard Development Company, L.P. Magnetic memory device with larger reference cell
US6784510B1 (en) * 2003-04-16 2004-08-31 Freescale Semiconductor, Inc. Magnetoresistive random access memory device structures
US7453719B2 (en) 2003-04-21 2008-11-18 Nec Corporation Magnetic random access memory with improved data reading method
KR100615586B1 (ko) * 2003-07-23 2006-08-25 삼성전자주식회사 다공성 유전막 내에 국부적인 상전이 영역을 구비하는상전이 메모리 소자 및 그 제조 방법
EP1505656B1 (en) * 2003-08-05 2007-01-03 STMicroelectronics S.r.l. Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
DE602005009411D1 (de) * 2004-01-29 2008-10-16 Sharp Kk Halbleiterspeichervorrichtung
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US7102948B2 (en) * 2004-04-01 2006-09-05 Hewlett-Packard Development Company, L.P. Resistance change sensor
WO2005096315A2 (en) * 2004-04-01 2005-10-13 Koninklijke Philips Electronics N.V. Thermally stable reference voltage generator for mram
US7630233B2 (en) 2004-04-02 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
JP4865248B2 (ja) * 2004-04-02 2012-02-01 株式会社半導体エネルギー研究所 半導体装置
DE102004047666B4 (de) * 2004-09-30 2015-04-02 Qimonda Ag Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung
US20060092689A1 (en) * 2004-11-04 2006-05-04 Daniel Braun Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells
JP2006165535A (ja) * 2004-11-11 2006-06-22 Semiconductor Energy Lab Co Ltd 半導体装置
WO2006051996A1 (en) 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102004058132B3 (de) * 2004-12-02 2006-03-02 Infineon Technologies Ag Speicherschaltung sowie Verfahren zum Bewerten eines Speicherdatums einer CBRAM-Widerstandsspeicherzelle
JP4660249B2 (ja) * 2005-03-31 2011-03-30 株式会社東芝 磁気ランダムアクセスメモリ
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7361561B2 (en) * 2005-06-24 2008-04-22 Freescale Semiconductor, Inc. Method of making a metal gate semiconductor device
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
JP2007053229A (ja) * 2005-08-18 2007-03-01 Nec Electronics Corp 半導体記憶装置およびその製造方法
KR100735748B1 (ko) * 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
US7463507B2 (en) * 2005-11-09 2008-12-09 Ulrike Gruening-Von Schwerin Memory device with a plurality of memory cells, in particular PCM memory cells, and method for operating such a memory cell device
KR100735750B1 (ko) * 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
KR100735525B1 (ko) 2006-01-04 2007-07-04 삼성전자주식회사 상변화 메모리 장치
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
JP4568303B2 (ja) * 2007-06-19 2010-10-27 株式会社東芝 磁気ランダムアクセスメモリ
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
JP2009117006A (ja) * 2007-11-09 2009-05-28 Toshiba Corp 抵抗変化メモリ装置
JP5019223B2 (ja) * 2007-11-21 2012-09-05 株式会社東芝 半導体記憶装置
TWI328816B (en) * 2007-12-06 2010-08-11 Ind Tech Res Inst Phase change memory and method of controlling phase change memory
JP4482039B2 (ja) * 2008-01-11 2010-06-16 株式会社東芝 抵抗変化型メモリ
JP2009200123A (ja) * 2008-02-19 2009-09-03 Nec Corp 磁気ランダムアクセスメモリ
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
KR101068573B1 (ko) * 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
KR101097435B1 (ko) * 2009-06-15 2011-12-23 주식회사 하이닉스반도체 멀티 레벨을 갖는 상변화 메모리 장치 및 그 구동방법
JP2012027974A (ja) * 2010-07-22 2012-02-09 Panasonic Corp 半導体記憶装置
US8787070B2 (en) * 2011-04-13 2014-07-22 Panasonic Corporation Reference cell circuit and variable resistance nonvolatile memory device including the same
JPWO2013027347A1 (ja) * 2011-08-24 2015-03-05 パナソニック株式会社 半導体記憶装置
US8576617B2 (en) * 2011-11-10 2013-11-05 Qualcomm Incorporated Circuit and method for generating a reference level for a magnetic random access memory element
WO2017105514A1 (en) * 2015-12-18 2017-06-22 Intel Corporation Apparatus and method of in-memory computation using non-volatile arrays
JP6271655B1 (ja) * 2016-08-05 2018-01-31 株式会社東芝 不揮発性メモリ
JP2018160628A (ja) 2017-03-23 2018-10-11 東芝メモリ株式会社 記憶装置
KR102313601B1 (ko) * 2017-03-24 2021-10-15 삼성전자주식회사 메모리 장치의 동작 방법
US10141503B1 (en) * 2017-11-03 2018-11-27 International Business Machines Corporation Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication
US11532783B2 (en) * 2020-03-05 2022-12-20 Tdk Corporation Magnetic recording array, neuromorphic device, and method of controlling magnetic recording array
JP7512116B2 (ja) * 2020-07-30 2024-07-08 Tdk株式会社 磁気メモリ

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Publication number Priority date Publication date Assignee Title
KR100894521B1 (ko) * 2006-09-28 2009-04-22 후지쯔 가부시끼가이샤 터널 자기 저항 소자, 자기 헤드 및 자기 메모리

Also Published As

Publication number Publication date
JP2003060165A (ja) 2003-02-28
CN1402252A (zh) 2003-03-12
US20030031045A1 (en) 2003-02-13
US6778426B2 (en) 2004-08-17
TWI234781B (en) 2005-06-21
JP4434527B2 (ja) 2010-03-17
KR20030014613A (ko) 2003-02-19
CN1280829C (zh) 2006-10-18

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