JP4408538B2 - プローブ装置 - Google Patents

プローブ装置 Download PDF

Info

Publication number
JP4408538B2
JP4408538B2 JP2000222882A JP2000222882A JP4408538B2 JP 4408538 B2 JP4408538 B2 JP 4408538B2 JP 2000222882 A JP2000222882 A JP 2000222882A JP 2000222882 A JP2000222882 A JP 2000222882A JP 4408538 B2 JP4408538 B2 JP 4408538B2
Authority
JP
Japan
Prior art keywords
probe
sample
contact
distance
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000222882A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002040107A (ja
JP2002040107A5 (enExample
Inventor
聡 富松
英巳 小池
淳三 東
亨 石谷
有俊 杉本
有一 濱村
雄 関原
朗 嶋瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000222882A priority Critical patent/JP4408538B2/ja
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to EP11008933A priority patent/EP2423676A1/en
Priority to EP01936933A priority patent/EP1335209A4/en
Priority to US10/296,887 priority patent/US6960765B2/en
Priority to PCT/JP2001/004875 priority patent/WO2002008774A1/ja
Publication of JP2002040107A publication Critical patent/JP2002040107A/ja
Priority to US11/201,222 priority patent/US7301146B2/en
Publication of JP2002040107A5 publication Critical patent/JP2002040107A5/ja
Application granted granted Critical
Publication of JP4408538B2 publication Critical patent/JP4408538B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
    • G01Q10/04—Fine scanning or positioning
    • G01Q10/06—Circuits or algorithms therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
JP2000222882A 2000-07-24 2000-07-24 プローブ装置 Expired - Lifetime JP4408538B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000222882A JP4408538B2 (ja) 2000-07-24 2000-07-24 プローブ装置
EP01936933A EP1335209A4 (en) 2000-07-24 2001-06-08 PROBE CONTROL METHOD AND PROBE DEVICE
US10/296,887 US6960765B2 (en) 2000-07-24 2001-06-08 Probe driving method, and probe apparatus
PCT/JP2001/004875 WO2002008774A1 (fr) 2000-07-24 2001-06-08 Procede et appareil de guidage de sonde
EP11008933A EP2423676A1 (en) 2000-07-24 2001-06-08 Probe apparatus
US11/201,222 US7301146B2 (en) 2000-07-24 2005-08-11 Probe driving method, and probe apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000222882A JP4408538B2 (ja) 2000-07-24 2000-07-24 プローブ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009108190A Division JP4996648B2 (ja) 2009-04-27 2009-04-27 プローブ装置

Publications (3)

Publication Number Publication Date
JP2002040107A JP2002040107A (ja) 2002-02-06
JP2002040107A5 JP2002040107A5 (enExample) 2006-01-19
JP4408538B2 true JP4408538B2 (ja) 2010-02-03

Family

ID=18717069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000222882A Expired - Lifetime JP4408538B2 (ja) 2000-07-24 2000-07-24 プローブ装置

Country Status (4)

Country Link
US (2) US6960765B2 (enExample)
EP (2) EP2423676A1 (enExample)
JP (1) JP4408538B2 (enExample)
WO (1) WO2002008774A1 (enExample)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345170A (en) 1992-06-11 1994-09-06 Cascade Microtech, Inc. Wafer probe station having integrated guarding, Kelvin connection and shielding systems
US6380751B2 (en) 1992-06-11 2002-04-30 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US6232789B1 (en) 1997-05-28 2001-05-15 Cascade Microtech, Inc. Probe holder for low current measurements
US5561377A (en) 1995-04-14 1996-10-01 Cascade Microtech, Inc. System for evaluating probing networks
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6002263A (en) 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6828566B2 (en) * 1997-07-22 2004-12-07 Hitachi Ltd Method and apparatus for specimen fabrication
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US6445202B1 (en) 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6838890B2 (en) 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6965226B2 (en) 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
DE10143173A1 (de) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafersonde
US6970634B2 (en) * 2001-05-04 2005-11-29 Cascade Microtech, Inc. Fiber optic wafer probe
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US6777964B2 (en) 2002-01-25 2004-08-17 Cascade Microtech, Inc. Probe station
DE10220343B4 (de) * 2002-05-07 2007-04-05 Atg Test Systems Gmbh & Co. Kg Reicholzheim Vorrichtung und Verfahren zum Prüfen von Leiterplatten und Prüfsonde
JP2005527823A (ja) 2002-05-23 2005-09-15 カスケード マイクロテック インコーポレイテッド デバイスのテスト用プローブ
US6847219B1 (en) 2002-11-08 2005-01-25 Cascade Microtech, Inc. Probe station with low noise characteristics
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
US7250779B2 (en) 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US6896193B2 (en) * 2002-11-26 2005-05-24 S.C. Johnson & Son, Inc. Atomizer with improved wire type atomizing element support and method of making same
US6861856B2 (en) 2002-12-13 2005-03-01 Cascade Microtech, Inc. Guarded tub enclosure
DE10320381B4 (de) * 2003-05-06 2010-11-04 Scorpion Technologies Ag Platinentestvorrichtung mit schrägstehend angetriebenen Kontaktiernadeln
US7221172B2 (en) 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
WO2006017078A2 (en) 2004-07-07 2006-02-16 Cascade Microtech, Inc. Probe head having a membrane suspended probe
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US20050205430A1 (en) * 2003-11-26 2005-09-22 Microfabrica Inc. EFAB methods including controlled mask to substrate mating
WO2005065258A2 (en) 2003-12-24 2005-07-21 Cascade Microtech, Inc. Active wafer probe
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
JP4733959B2 (ja) * 2003-12-24 2011-07-27 株式会社日立ハイテクノロジーズ プローブ接触方法及び荷電粒子線装置
US7285778B2 (en) * 2004-02-23 2007-10-23 Zyvex Corporation Probe current imaging
US7326293B2 (en) 2004-03-26 2008-02-05 Zyvex Labs, Llc Patterned atomic layer epitaxy
US7176705B2 (en) 2004-06-07 2007-02-13 Cascade Microtech, Inc. Thermal optical chuck
US7330041B2 (en) 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
JP5436527B2 (ja) * 2004-08-25 2014-03-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP5001533B2 (ja) * 2004-08-25 2012-08-15 エスアイアイ・ナノテクノロジー株式会社 プローブのアプローチ方法
KR20070058522A (ko) 2004-09-13 2007-06-08 캐스케이드 마이크로테크 인코포레이티드 양측 프루빙 구조
JP4627168B2 (ja) * 2004-09-24 2011-02-09 日本電信電話株式会社 機能デバイスの作製方法および機能デバイス
JP4842533B2 (ja) * 2004-10-27 2011-12-21 株式会社日立ハイテクノロジーズ 不良検査装置
EP1812945B1 (en) * 2004-11-03 2017-01-25 Omniprobe, Inc. Method and apparatus for the automated process of in-situ lift-out
US7197110B2 (en) * 2004-11-29 2007-03-27 Motorola, Inc. Method for determining chemical content of complex structures using X-ray microanalysis
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7665349B2 (en) * 2005-04-12 2010-02-23 Veeco Instruments Inc. Method and apparatus for rapid automatic engagement of a probe
JP2006308476A (ja) * 2005-04-28 2006-11-09 Tokyo Seimitsu Co Ltd 表面粗さ／形状測定装置
US7449899B2 (en) 2005-06-08 2008-11-11 Cascade Microtech, Inc. Probe for high frequency signals
JP4520905B2 (ja) * 2005-06-10 2010-08-11 株式会社日立ハイテクノロジーズ 解析装置、プローブの制御方法および解析システム
EP1932003A2 (en) 2005-06-13 2008-06-18 Cascade Microtech, Inc. Wideband active-passive differential signal probe
JP2007018935A (ja) * 2005-07-08 2007-01-25 Hitachi High-Technologies Corp プローブ付き顕微鏡及びプローブ接触方法
JP4794256B2 (ja) * 2005-09-27 2011-10-19 株式会社東京精密 プローバ、プローブ接触方法及びそのためのプログラム
JP4520926B2 (ja) * 2005-10-14 2010-08-11 株式会社日立ハイテクノロジーズ 試料解析方法
ATE474754T1 (de) * 2006-03-22 2010-08-15 Gm Global Tech Operations Inc Steuerverfahren und -vorrichtung für ein fahrstil-empfindliches fahrzeugsubsystem
US7712354B2 (en) * 2006-06-06 2010-05-11 Jeol Ltd. Method and apparatus for controlling Z-position of probe
DE112007001399T5 (de) 2006-06-09 2009-05-07 Cascade Microtech, Inc., Beaverton Messfühler für differentielle Signale mit integrierter Symmetrieschaltung
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7443186B2 (en) 2006-06-12 2008-10-28 Cascade Microtech, Inc. On-wafer test structures for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
EP1879011B1 (en) * 2006-07-10 2013-01-30 Fei Company Method for separating a minute sample from a work piece
CN101105430B (zh) * 2006-07-10 2011-11-16 Fei公司 用于从工件上分离微型样品的方法
JP4307470B2 (ja) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料加工方法及び半導体検査装置
US7472585B2 (en) * 2006-10-27 2009-01-06 Agilent Technologies, Inc. Method for rapid seeks to the measurement surface for a scanning probe microscope
US7659509B2 (en) * 2006-10-31 2010-02-09 Agilent Technologies, Inc. System for scanning probe microscope input device
JP5002273B2 (ja) * 2007-01-23 2012-08-15 日本電子株式会社 試料検査装置及び試料検査方法
US7786436B1 (en) * 2006-12-22 2010-08-31 Dcg Systems, Inc. FIB based open via analysis and repair
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
JP5121619B2 (ja) * 2008-07-31 2013-01-16 エスアイアイ・ナノテクノロジー株式会社 プローブ顕微鏡の探針位置合せ方法およびその方法により操作されるプローブ顕微鏡
JP5192313B2 (ja) * 2008-08-14 2013-05-08 株式会社日立ハイテクノロジーズ 接触検出装置および接触検出方法
US8111903B2 (en) * 2008-09-26 2012-02-07 International Business Machines Corporation Inline low-damage automated failure analysis
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
WO2010059247A2 (en) 2008-11-21 2010-05-27 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
JP5537058B2 (ja) * 2009-03-30 2014-07-02 株式会社日立ハイテクノロジーズ 試料作製装置、及び試料作製装置における制御方法
JP5324534B2 (ja) * 2010-07-29 2013-10-23 株式会社日立ハイテクノロジーズ 検査方法及び装置
JP5044003B2 (ja) * 2010-08-31 2012-10-10 日本電信電話株式会社 プローブの作製方法およびプローブ、ならびに走査プローブ顕微鏡
JP5750883B2 (ja) * 2010-12-21 2015-07-22 富士通株式会社 プローブ装置及びプローブ測定方法
JP2013140840A (ja) * 2011-12-28 2013-07-18 Hitachi High-Technologies Corp 試料観察装置
JP5887247B2 (ja) * 2012-10-15 2016-03-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置および試料作製法
EP2838107B1 (en) 2013-08-14 2016-06-01 Fei Company Circuit probe for charged particle beam system
CN103983498A (zh) * 2014-04-24 2014-08-13 江苏迈世达电子有限公司 一种用于线路板金相切片分析的微蚀液及其使用方法
KR102383571B1 (ko) 2014-06-30 2022-04-06 가부시키가이샤 히다치 하이테크 사이언스 자동 시료 제작 장치
TW201616135A (zh) * 2014-10-29 2016-05-01 力晶科技股份有限公司 縮小探針的針尖尺寸的方法及載台
JP6900026B2 (ja) * 2017-03-27 2021-07-07 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP6913344B2 (ja) * 2017-03-27 2021-08-04 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP7182951B2 (ja) * 2018-08-27 2022-12-05 株式会社日本マイクロニクス 検査装置及び検査方法
CN110286290A (zh) * 2019-07-09 2019-09-27 江苏安方电力科技有限公司 一种变压器自动接线装置
CN110987550A (zh) * 2019-11-11 2020-04-10 嘉兴华才检测技术有限公司 一种食品加工检测箱
US11280749B1 (en) * 2020-10-23 2022-03-22 Applied Materials Israel Ltd. Holes tilt angle measurement using FIB diagonal cut
JP7507838B2 (ja) 2021-11-30 2024-06-28 イノヴェータム・インストゥルメンツ・インコーポレイテッド 荷電粒子ビームを使用するプローブ先端のｘ－ｙロケーションの識別
US12306241B2 (en) * 2022-02-14 2025-05-20 Innovatum Instruments Inc. Automated probe landing
CN116168996B (zh) * 2023-04-24 2023-06-27 合肥晶合集成电路股份有限公司 一种电子显微镜及其工作方法
CN117894704A (zh) * 2024-01-16 2024-04-16 芯测通(深圳)半导体有限公司 一种晶圆针测控制方法、装置、设备及存储介质

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126056A (en) * 1981-01-29 1982-08-05 Akashi Seisakusho Co Ltd Scanning-type electronic microscope which can display plural sample images simultaneously, and device similar to it
JP2944056B2 (ja) * 1990-08-06 1999-08-30 東京エレクトロン株式会社 電気回路測定用探針の接触検知装置及びこの接触検知装置を用いた電気回路測定装置
JPH04150047A (ja) * 1990-10-15 1992-05-22 Seiko Epson Corp ウエハプローバ
JP2774884B2 (ja) 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
JP3252410B2 (ja) * 1991-10-22 2002-02-04 ソニー株式会社 微小領域物性測定装置
JPH07333301A (ja) * 1994-06-03 1995-12-22 Brother Ind Ltd 基板検査装置
JPH0837211A (ja) * 1994-07-26 1996-02-06 Hitachi Ltd 半導体装置の検査装置
US5656812A (en) * 1995-07-21 1997-08-12 Jeol Ltd. Electron probe microanalyzer and X-ray analysis using same
JPH09320505A (ja) * 1996-03-29 1997-12-12 Hitachi Ltd 電子線式検査方法及びその装置並びに半導体の製造方法及びその製造ライン
JP3577839B2 (ja) 1996-06-04 2004-10-20 株式会社日立製作所 不良検査方法および装置
JP3002743B2 (ja) 1996-07-23 2000-01-24 鹿島建設株式会社 浮基礎および浮基礎の空気バネ交換方法
JP3547143B2 (ja) * 1997-07-22 2004-07-28 株式会社日立製作所 試料作製方法
JP3624721B2 (ja) * 1998-11-17 2005-03-02 株式会社日立製作所 プローブ装置
JP3613039B2 (ja) 1998-12-02 2005-01-26 株式会社日立製作所 試料作製装置
US6583413B1 (en) * 1999-09-01 2003-06-24 Hitachi, Ltd. Method of inspecting a circuit pattern and inspecting instrument
EP1209737B2 (en) * 2000-11-06 2014-04-30 Hitachi, Ltd. Method for specimen fabrication

Also Published As

Publication number Publication date
EP1335209A1 (en) 2003-08-13
JP2002040107A (ja) 2002-02-06
EP2423676A1 (en) 2012-02-29
US20030184332A1 (en) 2003-10-02
WO2002008774A1 (fr) 2002-01-31
US6960765B2 (en) 2005-11-01
US7301146B2 (en) 2007-11-27
US20050269511A1 (en) 2005-12-08
EP1335209A4 (en) 2009-08-26

Similar Documents

Publication Publication Date Title
JP4408538B2 (ja) プローブ装置
JP3996774B2 (ja) パターン欠陥検査方法及びパターン欠陥検査装置
JP3577839B2 (ja) 不良検査方法および装置
US7476872B2 (en) Method and apparatus for observing inside structures, and specimen holder
JP4307470B2 (ja) 荷電粒子線装置、試料加工方法及び半導体検査装置
JP4996648B2 (ja) プローブ装置
US20180204704A1 (en) Charged particle beam apparatus
JP2016503890A (ja) 荷電粒子ビームを用いた傾斜ミリングまたは視射角ミリング操作用の基準マーク設計
JP2006105960A (ja) 試料検査方法及び試料検査装置
US7372050B2 (en) Method of preventing charging, and apparatus for charged particle beam using the same
JP4090657B2 (ja) プローブ装置
JP2007180403A (ja) 荷電粒子線装置、半導体検査装置及び試料加工方法
JP3836735B2 (ja) 回路パターンの検査装置
JP2010182897A (ja) 電子線の影響を考慮した半導体検査方法及び装置
JP4505946B2 (ja) 荷電粒子線装置およびプローブ制御方法
US20060249692A1 (en) Composite charged particle beam apparatus and an irradiation alignment method in it
JP4520905B2 (ja) 解析装置、プローブの制御方法および解析システム
JP2007280614A (ja) 反射結像型電子顕微鏡、及びそれを用いた欠陥検査装置
JP3879722B2 (ja) 検査装置
JP4534235B2 (ja) 試料分析方法
JP2004170395A (ja) 荷電粒子線装置
JP2519512B2 (ja) 集束イオンビ―ム装置
JP4795308B2 (ja) 内部構造観察用及び電子顕微鏡用試料ホルダー
JP3953015B2 (ja) 検査方法及び検査装置
JP2008300878A (ja) 不良検査方法および装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090427

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090526

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090824

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090903

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091104

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091110

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4408538

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121120

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121120

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131120

Year of fee payment: 4

EXPY Cancellation because of completion of term