JP4361625B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4361625B2
JP4361625B2 JP29761498A JP29761498A JP4361625B2 JP 4361625 B2 JP4361625 B2 JP 4361625B2 JP 29761498 A JP29761498 A JP 29761498A JP 29761498 A JP29761498 A JP 29761498A JP 4361625 B2 JP4361625 B2 JP 4361625B2
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Japan
Prior art keywords
film
carbon
containing silicon
gas
silicon
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Expired - Fee Related
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JP29761498A
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English (en)
Japanese (ja)
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JP2000114252A (ja
JP2000114252A5 (https=
Inventor
俊一 遠藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority to JP29761498A priority Critical patent/JP4361625B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW088117137A priority patent/TW429428B/zh
Priority to KR10-2001-7004239A priority patent/KR100414297B1/ko
Priority to EP99970209A priority patent/EP1122769A4/en
Priority to PCT/JP1999/005464 priority patent/WO2000021124A1/ja
Publication of JP2000114252A publication Critical patent/JP2000114252A/ja
Priority to US09/659,342 priority patent/US6429518B1/en
Publication of JP2000114252A5 publication Critical patent/JP2000114252A5/ja
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Publication of JP4361625B2 publication Critical patent/JP4361625B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP29761498A 1998-10-05 1998-10-05 半導体装置及びその製造方法 Expired - Fee Related JP4361625B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP29761498A JP4361625B2 (ja) 1998-10-05 1998-10-05 半導体装置及びその製造方法
KR10-2001-7004239A KR100414297B1 (ko) 1998-10-05 1999-10-05 반도체 장치
EP99970209A EP1122769A4 (en) 1998-10-05 1999-10-05 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
PCT/JP1999/005464 WO2000021124A1 (fr) 1998-10-05 1999-10-05 Dispositif a semi-conducteurs et procede de fabrication de ce dernier
TW088117137A TW429428B (en) 1998-10-05 1999-10-05 Semiconductor device and process of making the same
US09/659,342 US6429518B1 (en) 1998-10-05 2000-09-12 Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29761498A JP4361625B2 (ja) 1998-10-05 1998-10-05 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000114252A JP2000114252A (ja) 2000-04-21
JP2000114252A5 JP2000114252A5 (https=) 2005-11-04
JP4361625B2 true JP4361625B2 (ja) 2009-11-11

Family

ID=17848846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29761498A Expired - Fee Related JP4361625B2 (ja) 1998-10-05 1998-10-05 半導体装置及びその製造方法

Country Status (6)

Country Link
US (1) US6429518B1 (https=)
EP (1) EP1122769A4 (https=)
JP (1) JP4361625B2 (https=)
KR (1) KR100414297B1 (https=)
TW (1) TW429428B (https=)
WO (1) WO2000021124A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9966442B2 (en) 2016-05-30 2018-05-08 Kabushiki Kaisha Toshiba Semiconductor device, method of manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223485A (ja) * 1999-01-28 2000-08-11 Nec Corp 複合絶縁膜の製造方法及びこれを用いた半導体装置の製造方法
US6440878B1 (en) * 2000-04-03 2002-08-27 Sharp Laboratories Of America, Inc. Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
WO2001097269A1 (fr) * 2000-06-13 2001-12-20 Applied Materials Inc. Procede et systeme de transformation de film et tranche
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
WO2002023625A2 (en) * 2000-09-11 2002-03-21 Tokyo Electron Limited Semiconductor device and fabrication method therefor
US6989579B2 (en) * 2001-12-26 2006-01-24 Lucent Technologies Inc. Adhering layers to metals with dielectric adhesive layers
JP3915697B2 (ja) * 2002-01-15 2007-05-16 東京エレクトロン株式会社 成膜方法及び成膜装置
TW574762B (en) * 2002-10-16 2004-02-01 Univ Nat Cheng Kung Method for growing monocrystal GaN on silicon substrate
US7514359B2 (en) * 2003-01-14 2009-04-07 Alcatel-Lucent Usa Inc. Adhering layers to metals with dielectric adhesive layers
JP4369264B2 (ja) * 2003-03-25 2009-11-18 東京エレクトロン株式会社 プラズマ成膜方法
JP4209253B2 (ja) * 2003-05-22 2009-01-14 忠弘 大見 フッ素添加カーボン膜の形成方法
KR100743745B1 (ko) * 2004-01-13 2007-07-27 동경 엘렉트론 주식회사 반도체장치의 제조방법 및 성막시스템
CN100433294C (zh) * 2004-01-13 2008-11-12 东京毅力科创株式会社 半导体装置的制造方法以及成膜系统
WO2006008841A1 (ja) * 2004-07-22 2006-01-26 Kyoto University フルオロカーボン膜及びその形成方法
JP4927343B2 (ja) * 2005-03-18 2012-05-09 ルネサスエレクトロニクス株式会社 半導体チップおよびその製造方法
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
JP4894223B2 (ja) * 2005-10-26 2012-03-14 ソニー株式会社 平面型表示装置
US7851351B2 (en) 2006-03-31 2010-12-14 Tokyo Electron Limited Manufacturing method for semiconductor devices with enhanced adhesivity and barrier properties
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
US8021975B2 (en) * 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
WO2009101474A2 (en) * 2007-11-27 2009-08-20 Tokyo Electron Limited Semiconductor device and method for manufacturing the same
KR20150052132A (ko) * 2012-09-04 2015-05-13 피에스4 뤽스코 에스.에이.알.엘. 반도체 장치 및 그 제조방법
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
JP2015065289A (ja) * 2013-09-25 2015-04-09 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2015199111A1 (ja) 2014-06-25 2015-12-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6345104B2 (ja) * 2014-12-24 2018-06-20 東京エレクトロン株式会社 成膜方法
JP6946936B2 (ja) * 2017-10-31 2021-10-13 日本電信電話株式会社 光導波路およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2826787B2 (ja) * 1992-08-26 1998-11-18 富士通株式会社 半導体装置
US5753975A (en) * 1994-09-01 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor device with improved adhesion between titanium-based metal wiring layer and insulation film
CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
JP2748864B2 (ja) * 1994-09-12 1998-05-13 日本電気株式会社 半導体装置及びその製造方法及び非晶質炭素膜の製造方法及びプラズマｃｖｄ装置
US6157083A (en) * 1996-06-03 2000-12-05 Nec Corporation Fluorine doping concentrations in a multi-structure semiconductor device
JP3409984B2 (ja) * 1996-11-14 2003-05-26 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP3228183B2 (ja) * 1996-12-02 2001-11-12 日本電気株式会社 絶縁膜ならびにその絶縁膜を有する半導体装置とその製造方法
JP3287392B2 (ja) * 1997-08-22 2002-06-04 日本電気株式会社 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9966442B2 (en) 2016-05-30 2018-05-08 Kabushiki Kaisha Toshiba Semiconductor device, method of manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

Also Published As

Publication number Publication date
KR20010075566A (ko) 2001-08-09
TW429428B (en) 2001-04-11
JP2000114252A (ja) 2000-04-21
KR100414297B1 (ko) 2004-01-07
EP1122769A4 (en) 2004-10-13
US6429518B1 (en) 2002-08-06
EP1122769A1 (en) 2001-08-08
WO2000021124A1 (fr) 2000-04-13

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