JP4341685B2 - 光源装置及びプロジェクタ - Google Patents
光源装置及びプロジェクタ Download PDFInfo
- Publication number
- JP4341685B2 JP4341685B2 JP2007041851A JP2007041851A JP4341685B2 JP 4341685 B2 JP4341685 B2 JP 4341685B2 JP 2007041851 A JP2007041851 A JP 2007041851A JP 2007041851 A JP2007041851 A JP 2007041851A JP 4341685 B2 JP4341685 B2 JP 4341685B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength
- light emitting
- source device
- emitting unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
- H04N9/3161—Modulator illumination systems using laser light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Projection Apparatus (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Semiconductor Lasers (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Description
Claims (6)
- 間隔を設けて並列された複数の発光部と、
前記発光部からの光を共振させる外部共振器と、
前記発光部及び前記外部共振器の間の光路中に設けられ、前記発光部からの光の波長を変換させる波長変換素子と、を有し、
前記発光部は、複数の前記発光部を並列させた部分の中心部付近における前記間隔を、複数の前記発光部を並列させた部分の両端部付近における前記間隔より小さくさせて配置され、
前記波長変換素子は、前記中心部付近の前記発光部に対応する位置にて、前記両端部付近の前記発光部に対応する位置にて波長変換させる光の波長より長い波長の光を波長変換させることを特徴とする光源装置。 - 前記波長変換素子及び前記外部共振器の間に設けられた波長選択素子を有し、
前記波長選択素子は、前記中心部付近の前記発光部に対応する位置にて、前記両端部付近の前記発光部に対応する位置にて透過させる光の波長より長い波長の光を透過させることを特徴とする請求項1に記載の光源装置。 - 間隔を設けて並列された複数の発光部と、
前記発光部からの光を共振させる外部共振器と、
前記発光部及び前記外部共振器の間の光路中に設けられ、前記発光部からの光の波長を変換させる波長変換素子と、を有し、
前記発光部は、複数の前記発光部を並列させた部分の第1端部付近における前記間隔を、複数の前記発光部を並列させた部分の第2端部付近における前記間隔より小さくさせて配置され、
前記波長変換素子は、前記第1端部付近の前記発光部に対応する位置にて、前記第2端部付近の前記発光部に対応する位置にて波長変換させる光の波長より長い波長の光を波長変換させることを特徴とする光源装置。 - 前記波長変換素子及び前記外部共振器の間に設けられた波長選択素子を有し、
前記波長選択素子は、前記第1端部付近の前記発光部に対応する位置にて、前記第2端部付近の前記発光部に対応する位置にて透過させる光の波長より長い波長の光を透過させることを特徴とする請求項3に記載の光源装置。 - 前記発光部は、レーザ光を出射させることを特徴とする請求項1〜4のいずれか一項に記載の光源装置。
- 請求項1〜5のいずれか一項に記載の光源装置と、
前記光源装置からの光を画像信号に応じて変調する空間光変調装置と、を有することを特徴とするプロジェクタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007041851A JP4341685B2 (ja) | 2007-02-22 | 2007-02-22 | 光源装置及びプロジェクタ |
US12/034,249 US7936800B2 (en) | 2007-02-22 | 2008-02-20 | Light source device and projector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007041851A JP4341685B2 (ja) | 2007-02-22 | 2007-02-22 | 光源装置及びプロジェクタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008205342A JP2008205342A (ja) | 2008-09-04 |
JP4341685B2 true JP4341685B2 (ja) | 2009-10-07 |
Family
ID=39715848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007041851A Expired - Fee Related JP4341685B2 (ja) | 2007-02-22 | 2007-02-22 | 光源装置及びプロジェクタ |
Country Status (2)
Country | Link |
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US (1) | US7936800B2 (ja) |
JP (1) | JP4341685B2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010129530A (ja) * | 2008-12-01 | 2010-06-10 | Toshiba Lighting & Technology Corp | 照明装置 |
JP5981092B2 (ja) * | 2011-03-23 | 2016-08-31 | ローム株式会社 | マルチビーム半導体レーザ装置 |
JP5901391B2 (ja) * | 2012-03-30 | 2016-04-06 | 富士通株式会社 | 光半導体素子、発光装置、光伝送装置及び光半導体素子の製造方法 |
JP5416293B1 (ja) * | 2013-02-27 | 2014-02-12 | アイリスオーヤマ株式会社 | 照明装置 |
JP2014187138A (ja) * | 2013-03-22 | 2014-10-02 | Ushio Inc | レーザ光源装置 |
EP2999062B1 (en) * | 2013-05-13 | 2021-11-10 | Mitsubishi Electric Corporation | Semiconductor laser device |
JP6244668B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP6244667B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
US9391425B2 (en) | 2014-10-17 | 2016-07-12 | Lumentum Operations Llc | Wavelength combined laser system |
JP6848302B2 (ja) * | 2015-11-13 | 2021-03-24 | 株式会社リコー | 面発光レーザアレイ及びレーザ装置 |
CN108886232B (zh) * | 2015-12-25 | 2021-08-17 | 鸿海精密工业股份有限公司 | 线束光源及线束照射装置以及激光剥离方法 |
US10250012B2 (en) * | 2016-06-02 | 2019-04-02 | Lumentum Operations Llc | Variable emission area design for a vertical-cavity surface-emitting laser array |
WO2019021802A1 (ja) * | 2017-07-26 | 2019-01-31 | パナソニック株式会社 | 半導体レーザ素子及び半導体レーザ装置 |
US10355456B2 (en) * | 2017-09-26 | 2019-07-16 | Lumentum Operations Llc | Emitter array with variable spacing between adjacent emitters |
GB2567880B (en) * | 2017-10-30 | 2022-11-30 | Bae Systems Plc | Laser diode array |
WO2019163276A1 (ja) * | 2018-02-26 | 2019-08-29 | パナソニック株式会社 | 半導体発光装置 |
US11398715B2 (en) * | 2018-02-26 | 2022-07-26 | Panasonic Holdings Corporation | Semiconductor light emitting device |
JP7379859B2 (ja) * | 2018-06-29 | 2023-11-15 | 株式会社リコー | 光源、投影装置、計測装置、ロボット、電子機器、移動体、および造形装置 |
US12027824B2 (en) * | 2018-09-04 | 2024-07-02 | Ams Sensors Asia Pte. Ltd. | Linear VCSEL arrays |
DE112019006646B4 (de) * | 2019-01-10 | 2024-04-18 | Mitsubishi Electric Corporation | Halbleiter-Laservorrichtung |
JP7297121B2 (ja) * | 2019-01-10 | 2023-06-23 | 三菱電機株式会社 | 半導体レーザ装置 |
JP7505183B2 (ja) * | 2019-03-14 | 2024-06-25 | 株式会社リコー | 光源装置、検出装置及び電子機器 |
EP3938830A1 (en) * | 2019-03-14 | 2022-01-19 | Ricoh Company, Ltd. | Light source device, detection device, and electronic apparatus |
WO2020224811A1 (en) * | 2019-05-09 | 2020-11-12 | Lumileds Holding B.V. | Light-emitting device |
DE102020112806A1 (de) * | 2020-05-12 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserbauelement und verfahren zum betrieb zumindest eines halbleiterlasers |
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JP2006343712A (ja) * | 2005-05-12 | 2006-12-21 | Seiko Epson Corp | 光源装置、走査型表示装置、プロジェクタ |
EP1770836B1 (de) * | 2005-09-29 | 2015-04-22 | OSRAM Opto Semiconductors GmbH | Laserdiodenvorrichtung, Laseranordnung mit mindestens einer Laserdiodevorrichtung und optisch gepumpter Laser |
JP5187474B2 (ja) * | 2006-06-22 | 2013-04-24 | ソニー株式会社 | 半導体レーザアレイおよび光学装置 |
-
2007
- 2007-02-22 JP JP2007041851A patent/JP4341685B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-20 US US12/034,249 patent/US7936800B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20080205459A1 (en) | 2008-08-28 |
JP2008205342A (ja) | 2008-09-04 |
US7936800B2 (en) | 2011-05-03 |
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