JP4304750B2 - 窒化物半導体の成長方法及び窒化物半導体素子 - Google Patents

窒化物半導体の成長方法及び窒化物半導体素子 Download PDF

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Publication number
JP4304750B2
JP4304750B2 JP03782699A JP3782699A JP4304750B2 JP 4304750 B2 JP4304750 B2 JP 4304750B2 JP 03782699 A JP03782699 A JP 03782699A JP 3782699 A JP3782699 A JP 3782699A JP 4304750 B2 JP4304750 B2 JP 4304750B2
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nitride semiconductor
protective film
growth
substrate
grown
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JP03782699A
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JP2000232239A5 (enExample
JP2000232239A (ja
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徳也 小崎
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP03782699A 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子 Expired - Fee Related JP4304750B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03782699A JP4304750B2 (ja) 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-348761 1998-12-08
JP34876198 1998-12-08
JP03782699A JP4304750B2 (ja) 1998-12-08 1999-02-16 窒化物半導体の成長方法及び窒化物半導体素子

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JP2000232239A JP2000232239A (ja) 2000-08-22
JP2000232239A5 JP2000232239A5 (enExample) 2006-04-27
JP4304750B2 true JP4304750B2 (ja) 2009-07-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005523A (zh) * 2009-09-01 2011-04-06 夏普株式会社 氮化物半导体元件及其制造方法及半导体层的制造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
CN1213462C (zh) 2000-03-14 2005-08-03 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6858882B2 (en) 2000-09-08 2005-02-22 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
WO2002039555A1 (en) 2000-11-10 2002-05-16 Sharp Kabushiki Kaisha Nitride semiconductor luminous element and optical device including it
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3705142B2 (ja) 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
JP2004262757A (ja) * 2001-04-24 2004-09-24 Sony Corp 窒化物半導体、半導体素子およびこれらの製造方法
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
KR101363377B1 (ko) 2002-04-15 2014-02-14 더 리전츠 오브 더 유니버시티 오브 캘리포니아 무극성 질화 갈륨 박막의 전위 감소
KR101170889B1 (ko) * 2003-05-21 2012-08-06 쌩-고벵 크리스톡스 에 드테끄퇴르 마스크를 통한 측면 성장에 의한 질화갈륨 기판의 제조 방법 및 이에 의해 제조된 장치
EP1619729B1 (en) * 2004-04-16 2010-02-10 Nitride Semiconductors Co., Ltd. Gallium nitride based light-emitting device
JP5323412B2 (ja) * 2008-07-25 2013-10-23 シャープ株式会社 電界効果トランジスタ
JP5705179B2 (ja) * 2012-08-15 2015-04-22 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
JP2017092075A (ja) * 2015-11-02 2017-05-25 株式会社ソディック 発光素子
GB2593693B (en) * 2020-03-30 2022-08-03 Plessey Semiconductors Ltd LED precursor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005523A (zh) * 2009-09-01 2011-04-06 夏普株式会社 氮化物半导体元件及其制造方法及半导体层的制造方法
US8445930B2 (en) 2009-09-01 2013-05-21 Sharp Kabushiki Kaisha Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element

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