JP4301760B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4301760B2
JP4301760B2 JP2002049685A JP2002049685A JP4301760B2 JP 4301760 B2 JP4301760 B2 JP 4301760B2 JP 2002049685 A JP2002049685 A JP 2002049685A JP 2002049685 A JP2002049685 A JP 2002049685A JP 4301760 B2 JP4301760 B2 JP 4301760B2
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JP
Japan
Prior art keywords
node
circuit
mos transistor
voltage
power supply
Prior art date
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Expired - Fee Related
Application number
JP2002049685A
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English (en)
Japanese (ja)
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JP2003249569A (ja
JP2003249569A5 (US06771117-20040803-M00021.png
Inventor
宏明 中井
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002049685A priority Critical patent/JP4301760B2/ja
Priority to US10/222,998 priority patent/US6771117B2/en
Priority to DE10245139A priority patent/DE10245139A1/de
Publication of JP2003249569A publication Critical patent/JP2003249569A/ja
Priority to US10/883,807 priority patent/US7106129B2/en
Publication of JP2003249569A5 publication Critical patent/JP2003249569A5/ja
Application granted granted Critical
Publication of JP4301760B2 publication Critical patent/JP4301760B2/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP2002049685A 2002-02-26 2002-02-26 半導体装置 Expired - Fee Related JP4301760B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002049685A JP4301760B2 (ja) 2002-02-26 2002-02-26 半導体装置
US10/222,998 US6771117B2 (en) 2002-02-26 2002-08-19 Semiconductor device less susceptible to variation in threshold voltage
DE10245139A DE10245139A1 (de) 2002-02-26 2002-09-27 Eine für Schwellenwertspannungsänderungen weniger anfällige Halbleitervorrichtung
US10/883,807 US7106129B2 (en) 2002-02-26 2004-07-06 Semiconductor device less susceptible to variation in threshold voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002049685A JP4301760B2 (ja) 2002-02-26 2002-02-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2003249569A JP2003249569A (ja) 2003-09-05
JP2003249569A5 JP2003249569A5 (US06771117-20040803-M00021.png) 2005-08-25
JP4301760B2 true JP4301760B2 (ja) 2009-07-22

Family

ID=27750802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002049685A Expired - Fee Related JP4301760B2 (ja) 2002-02-26 2002-02-26 半導体装置

Country Status (3)

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US (2) US6771117B2 (US06771117-20040803-M00021.png)
JP (1) JP4301760B2 (US06771117-20040803-M00021.png)
DE (1) DE10245139A1 (US06771117-20040803-M00021.png)

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US20050088222A1 (en) * 2003-10-27 2005-04-28 Stmicroelectronics, Inc. Chip enabled voltage regulator
US6858917B1 (en) * 2003-12-05 2005-02-22 National Semiconductor Corporation Metal oxide semiconductor (MOS) bandgap voltage reference circuit
JP4176002B2 (ja) * 2003-12-15 2008-11-05 株式会社リコー 定電圧電源装置
JP4445780B2 (ja) * 2004-03-02 2010-04-07 Ｏｋｉセミコンダクタ株式会社 電圧レギュレータ
US7621463B2 (en) * 2005-01-12 2009-11-24 Flodesign, Inc. Fluid nozzle system using self-propelling toroidal vortices for long-range jet impact
US20060170466A1 (en) * 2005-01-31 2006-08-03 Sangbeom Park Adjustable start-up circuit for switching regulators
JP4199742B2 (ja) * 2005-02-28 2008-12-17 エルピーダメモリ株式会社 遅延回路、及びこれらを備えた半導体装置
US7737765B2 (en) * 2005-03-14 2010-06-15 Silicon Storage Technology, Inc. Fast start charge pump for voltage regulators
US7362084B2 (en) * 2005-03-14 2008-04-22 Silicon Storage Technology, Inc. Fast voltage regulators for charge pumps
JP5072274B2 (ja) * 2005-09-29 2012-11-14 エスケーハイニックス株式会社 メモリ装置の書き込み回路
US20070080740A1 (en) * 2005-10-06 2007-04-12 Berens Michael T Reference circuit for providing a temperature independent reference voltage and current
US7283010B2 (en) * 2005-10-20 2007-10-16 Honeywell International Inc. Power supply compensated voltage and current supply
US7514987B2 (en) 2005-11-16 2009-04-07 Mediatek Inc. Bandgap reference circuits
JP5288391B2 (ja) * 2007-05-24 2013-09-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8203392B2 (en) * 2007-08-24 2012-06-19 Standard Microsystems Corporation Oscillator stabilized for temperature and power supply variations
JP5112846B2 (ja) * 2007-12-27 2013-01-09 セイコーインスツル株式会社 電源切替回路
JP4844619B2 (ja) * 2008-03-27 2011-12-28 株式会社デンソー 半導体メモリ装置
US7936208B2 (en) * 2008-07-31 2011-05-03 International Business Machines Corporation Bias circuit for a MOS device
JP5285371B2 (ja) * 2008-09-22 2013-09-11 セイコーインスツル株式会社 バンドギャップ基準電圧回路
KR100997208B1 (ko) 2008-09-29 2010-11-29 충북대학교 산학협력단 저전압 연산 증폭기
US7907003B2 (en) * 2009-01-14 2011-03-15 Standard Microsystems Corporation Method for improving power-supply rejection
JP5488171B2 (ja) * 2010-04-27 2014-05-14 株式会社村田製作所 バイアス回路、電力増幅器及びカレントミラー回路
JP5577961B2 (ja) * 2010-08-30 2014-08-27 富士通株式会社 スイッチング素子補償回路
CN102801421B (zh) * 2011-05-25 2015-07-01 安凯(广州)微电子技术有限公司 一种复合比较器
CN103021451B (zh) * 2011-09-22 2016-03-30 复旦大学 一种基于阈值电压调节的多级温度控制自刷新存储设备及其方法
JP2018045534A (ja) * 2016-09-15 2018-03-22 東芝メモリ株式会社 半導体回路
KR20180106493A (ko) * 2017-03-20 2018-10-01 에스케이하이닉스 주식회사 반도체장치

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JPH08154022A (ja) * 1994-11-29 1996-06-11 Nec Corp 過電流保護回路付き増幅回路
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GB2313725B (en) * 1996-05-31 1998-04-08 Ebrahim Bushehri A circuit arrangement for a logic gate
KR100272508B1 (ko) * 1997-12-12 2000-11-15 김영환 내부전압(vdd) 발생회로
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
JP3512332B2 (ja) * 1998-04-07 2004-03-29 富士通株式会社 内部電圧発生回路
JPH11312392A (ja) * 1998-04-28 1999-11-09 Nec Corp レベル検出回路
JP3519958B2 (ja) * 1998-10-07 2004-04-19 株式会社リコー 基準電圧発生回路
KR100366616B1 (ko) * 1999-05-19 2003-01-09 삼성전자 주식회사 저전압 인터페이스용 고속 입력버퍼 회로
KR100400304B1 (ko) * 2000-12-27 2003-10-01 주식회사 하이닉스반도체 커런트 미러형의 밴드갭 기준전압 발생장치
US6445216B1 (en) * 2001-05-14 2002-09-03 Intel Corporation Sense amplifier having reduced Vt mismatch in input matched differential pair
US6529421B1 (en) * 2001-08-28 2003-03-04 Micron Technology, Inc. SRAM array with temperature-compensated threshold voltage
US6630859B1 (en) * 2002-01-24 2003-10-07 Taiwan Semiconductor Manufacturing Company Low voltage supply band gap circuit at low power process
JP2003258105A (ja) * 2002-02-27 2003-09-12 Ricoh Co Ltd 基準電圧発生回路及びその製造方法、並びにそれを用いた電源装置
US6661713B1 (en) * 2002-07-25 2003-12-09 Taiwan Semiconductor Manufacturing Company Bandgap reference circuit
TW583762B (en) * 2003-02-27 2004-04-11 Ind Tech Res Inst Bandgap reference circuit
US6844711B1 (en) * 2003-04-15 2005-01-18 Marvell International Ltd. Low power and high accuracy band gap voltage circuit

Also Published As

Publication number Publication date
JP2003249569A (ja) 2003-09-05
US20040238875A1 (en) 2004-12-02
US20030160649A1 (en) 2003-08-28
US7106129B2 (en) 2006-09-12
US6771117B2 (en) 2004-08-03
DE10245139A1 (de) 2003-09-11

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