JP4295489B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4295489B2
JP4295489B2 JP2002324991A JP2002324991A JP4295489B2 JP 4295489 B2 JP4295489 B2 JP 4295489B2 JP 2002324991 A JP2002324991 A JP 2002324991A JP 2002324991 A JP2002324991 A JP 2002324991A JP 4295489 B2 JP4295489 B2 JP 4295489B2
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Japan
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layer
type
ingaaln
substrate
manufacturing
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JP2002324991A
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Japanese (ja)
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JP2003218052A5 (cg-RX-API-DMAC7.html
JP2003218052A (ja
Inventor
哲三 上田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2002324991A priority Critical patent/JP4295489B2/ja
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Publication of JP2003218052A5 publication Critical patent/JP2003218052A5/ja
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JP2002324991A 2001-11-13 2002-11-08 半導体装置の製造方法 Expired - Fee Related JP4295489B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002324991A JP4295489B2 (ja) 2001-11-13 2002-11-08 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001346801 2001-11-13
JP2001-346801 2001-11-13
JP2002324991A JP4295489B2 (ja) 2001-11-13 2002-11-08 半導体装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005117447A Division JP4376821B2 (ja) 2001-11-13 2005-04-14 半導体装置の製造方法
JP2006158989A Division JP4340274B2 (ja) 2001-11-13 2006-06-07 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003218052A JP2003218052A (ja) 2003-07-31
JP2003218052A5 JP2003218052A5 (cg-RX-API-DMAC7.html) 2005-09-22
JP4295489B2 true JP4295489B2 (ja) 2009-07-15

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JP2002324991A Expired - Fee Related JP4295489B2 (ja) 2001-11-13 2002-11-08 半導体装置の製造方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086469A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
JP2006210564A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd バイポーラトランジスタの製造方法およびそれを用いたバイポーラトランジスタ
JP4817673B2 (ja) * 2005-02-25 2011-11-16 三洋電機株式会社 窒化物系半導体素子の作製方法
KR100753152B1 (ko) * 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP4994656B2 (ja) * 2005-12-20 2012-08-08 三洋電機株式会社 光半導体素子の製造方法
JP2007258248A (ja) * 2006-03-20 2007-10-04 Rohm Co Ltd ＧａＮ系半導体素子の製造方法及びＧａＮ系半導体素子
JP5130643B2 (ja) * 2006-04-07 2013-01-30 オムロン株式会社 加熱方法および加熱装置
JP2008141187A (ja) * 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
JP2011222969A (ja) * 2010-03-26 2011-11-04 Ngk Insulators Ltd 半導体素子用エピタキシャル基板の製造方法、半導体素子用エピタキシャル基板、および半導体素子
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
JP6441767B2 (ja) * 2015-08-12 2018-12-19 日本電信電話株式会社 半導体装置およびその製造方法
JP6655833B2 (ja) * 2016-03-31 2020-02-26 パナソニックＩｐマネジメント株式会社 スライス方法およびスライス装置
JP7166188B2 (ja) * 2019-02-13 2022-11-07 日機装株式会社 窒化物半導体の水素脱離方法

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