JP4451811B2 - 窒化物半導体素子の製法 - Google Patents
窒化物半導体素子の製法 Download PDFInfo
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- JP4451811B2 JP4451811B2 JP2005136179A JP2005136179A JP4451811B2 JP 4451811 B2 JP4451811 B2 JP 4451811B2 JP 2005136179 A JP2005136179 A JP 2005136179A JP 2005136179 A JP2005136179 A JP 2005136179A JP 4451811 B2 JP4451811 B2 JP 4451811B2
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- nitride semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 131
- 150000004767 nitrides Chemical class 0.000 title claims description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 152
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 37
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 239000010408 film Substances 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910019080 Mg-H Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
Description
2 低温バッファ層
3 n形層
4 活性層
5 p形層
6 半導体積層部
7 透光性導電層
8 p側電極
9 n側電極
10 単結晶緩衝層
Claims (2)
- 基板上にMOCVD法により窒化物半導体層を成長して少なくとも表面側にGaNまたはAlGaN系化合物からなるp形層を有する窒化物半導体素子の製法であって、前記p形層とするためアクセプタがドーピングされたGaNまたはAlGaN系化合物からなる半導体層に、該半導体層のアクセプタであるMgとHとの結合エネルギーより大きく、かつ、前記半導体層のバンドギャップエネルギーより小さい0.8μm以上で18μm以下の波長のレーザ光を照射することにより前記MgとHとの結合を切り離し、引き続き300〜400℃の熱処理をすることにより前記切り離されたHを前記半導体層から放出し、前記アクセプタを活性化することを特徴とする窒化物半導体素子の製法。
- 窒化物半導体と格子整合しない基板の表面に、PLD法を用いてAlxGayIn1-x-yN(0≦x≦1、0≦y≦1、0≦x+y≦1)からなり、該AlxGayIn1-x-yNのa軸およびc軸が整列した単結晶の緩衝層を、直接成長し、該単結晶の緩衝層上に窒化物半導体結晶層をMOCVD法により成長する請求項1記載の窒化物半導体素子の製法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005136179A JP4451811B2 (ja) | 2005-05-09 | 2005-05-09 | 窒化物半導体素子の製法 |
TW095115621A TW200705717A (en) | 2005-05-09 | 2006-05-02 | Process for fabricating nitride semiconductor element |
CNA2006800160663A CN101176213A (zh) | 2005-05-09 | 2006-05-08 | 氮化物半导体元件的制造方法 |
KR1020077025880A KR20080003870A (ko) | 2005-05-09 | 2006-05-08 | 질화물 반도체 소자의 제법 |
US11/920,043 US7718450B2 (en) | 2005-05-09 | 2006-05-08 | Method for manufacturing nitride semiconductor device |
PCT/JP2006/309241 WO2006120999A1 (ja) | 2005-05-09 | 2006-05-08 | 窒化物半導体素子の製法 |
EP06746072A EP1881536A1 (en) | 2005-05-09 | 2006-05-08 | Method of producing nitride semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005136179A JP4451811B2 (ja) | 2005-05-09 | 2005-05-09 | 窒化物半導体素子の製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006313844A JP2006313844A (ja) | 2006-11-16 |
JP4451811B2 true JP4451811B2 (ja) | 2010-04-14 |
Family
ID=37396507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005136179A Expired - Fee Related JP4451811B2 (ja) | 2005-05-09 | 2005-05-09 | 窒化物半導体素子の製法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7718450B2 (ja) |
EP (1) | EP1881536A1 (ja) |
JP (1) | JP4451811B2 (ja) |
KR (1) | KR20080003870A (ja) |
CN (1) | CN101176213A (ja) |
TW (1) | TW200705717A (ja) |
WO (1) | WO2006120999A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101405693B1 (ko) | 2007-11-26 | 2014-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
EP2273536B1 (en) * | 2008-03-13 | 2013-10-30 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor device and method for manufacturing the same, group iii nitride semiconductor light-emitting device and method for manufacturing the same, and lamp |
JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
JP5732684B2 (ja) * | 2010-03-05 | 2015-06-10 | 並木精密宝石株式会社 | 単結晶基板、単結晶基板の製造方法、多層膜付き単結晶基板の製造方法および素子製造方法 |
JP5874173B2 (ja) * | 2011-02-25 | 2016-03-02 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US8399367B2 (en) * | 2011-06-28 | 2013-03-19 | Nitride Solutions, Inc. | Process for high-pressure nitrogen annealing of metal nitrides |
CN103021844B (zh) * | 2011-09-26 | 2015-09-30 | 比亚迪股份有限公司 | 一种外延片退火方法 |
CN103390552B (zh) * | 2012-05-08 | 2017-11-14 | 中国科学院微电子研究所 | 一种退火系统 |
WO2015114711A1 (ja) * | 2014-01-29 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 半導体発光素子およびその駆動回路 |
JP6292104B2 (ja) * | 2014-11-17 | 2018-03-14 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
CN105355730B (zh) * | 2015-12-10 | 2017-11-28 | 厦门乾照光电股份有限公司 | 一种提高深紫外发光二极管p型激活效率的方法 |
CN105513951B (zh) * | 2015-12-25 | 2018-06-19 | 中国科学院半导体研究所 | 低电阻率p型氮化镓材料及其制备方法 |
JP6728960B2 (ja) * | 2016-05-18 | 2020-07-22 | 富士電機株式会社 | 処理装置および半導体装置の製造方法 |
JP7050060B2 (ja) * | 2016-10-28 | 2022-04-07 | ルミレッズ リミテッド ライアビリティ カンパニー | 紫外線照射下で発光デバイスを成長させる方法 |
CN109148658B (zh) * | 2018-07-12 | 2020-07-31 | 河源市众拓光电科技有限公司 | PLD结合MOCVD法在Si衬底上生长AlGaN基的紫外LED结构及制备方法 |
WO2020049835A1 (ja) * | 2018-09-07 | 2020-03-12 | 住友重機械工業株式会社 | 半導体製造方法及び半導体製造装置 |
WO2023149433A1 (ja) * | 2022-02-01 | 2023-08-10 | 公立大学法人大阪 | 発光素子の製造方法及び発光素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851235A (ja) | 1994-08-09 | 1996-02-20 | Rohm Co Ltd | 半導体発光素子の製法 |
JP3425357B2 (ja) | 1998-03-19 | 2003-07-14 | 株式会社東芝 | p型窒化ガリウム系化合物半導体層の製造方法 |
JP2000058919A (ja) * | 1998-08-13 | 2000-02-25 | Toshiba Corp | 半導体素子及びその製造方法 |
JP3820424B2 (ja) | 2001-03-27 | 2006-09-13 | 独立行政法人産業技術総合研究所 | 不純物イオン注入層の活性化法 |
US6881261B2 (en) * | 2001-11-13 | 2005-04-19 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
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2005
- 2005-05-09 JP JP2005136179A patent/JP4451811B2/ja not_active Expired - Fee Related
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2006
- 2006-05-02 TW TW095115621A patent/TW200705717A/zh unknown
- 2006-05-08 US US11/920,043 patent/US7718450B2/en not_active Expired - Fee Related
- 2006-05-08 KR KR1020077025880A patent/KR20080003870A/ko not_active Application Discontinuation
- 2006-05-08 EP EP06746072A patent/EP1881536A1/en not_active Withdrawn
- 2006-05-08 WO PCT/JP2006/309241 patent/WO2006120999A1/ja active Application Filing
- 2006-05-08 CN CNA2006800160663A patent/CN101176213A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW200705717A (en) | 2007-02-01 |
KR20080003870A (ko) | 2008-01-08 |
JP2006313844A (ja) | 2006-11-16 |
WO2006120999A1 (ja) | 2006-11-16 |
US7718450B2 (en) | 2010-05-18 |
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