JP4271413B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4271413B2
JP4271413B2 JP2002191493A JP2002191493A JP4271413B2 JP 4271413 B2 JP4271413 B2 JP 4271413B2 JP 2002191493 A JP2002191493 A JP 2002191493A JP 2002191493 A JP2002191493 A JP 2002191493A JP 4271413 B2 JP4271413 B2 JP 4271413B2
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Prior art keywords
semiconductor layer
conductivity type
crystalline semiconductor
type impurity
concentration
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Expired - Fee Related
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JP2002191493A
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Japanese (ja)
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JP2004039701A (ja
JP2004039701A5 (https=
Inventor
明久 下村
理 中村
達也 荒尾
秀和 宮入
敦生 磯部
圭恵 高野
弘毅 井上
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002191493A priority Critical patent/JP4271413B2/ja
Priority to US10/607,542 priority patent/US7329594B2/en
Publication of JP2004039701A publication Critical patent/JP2004039701A/ja
Publication of JP2004039701A5 publication Critical patent/JP2004039701A5/ja
Priority to US11/978,585 priority patent/US7534705B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP2002191493A 2002-06-28 2002-06-28 半導体装置の作製方法 Expired - Fee Related JP4271413B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002191493A JP4271413B2 (ja) 2002-06-28 2002-06-28 半導体装置の作製方法
US10/607,542 US7329594B2 (en) 2002-06-28 2003-06-27 Method of manufacturing a semiconductor device
US11/978,585 US7534705B2 (en) 2002-06-28 2007-10-30 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002191493A JP4271413B2 (ja) 2002-06-28 2002-06-28 半導体装置の作製方法

Publications (3)

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JP2004039701A JP2004039701A (ja) 2004-02-05
JP2004039701A5 JP2004039701A5 (https=) 2005-10-20
JP4271413B2 true JP4271413B2 (ja) 2009-06-03

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JP (1) JP4271413B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178682A1 (en) * 2001-12-28 2003-09-25 Takeshi Noda Semiconductor device and method of manufacturing the semiconductor device
JP4531343B2 (ja) 2003-03-26 2010-08-25 株式会社半導体エネルギー研究所 駆動回路
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
KR101299604B1 (ko) * 2005-10-18 2013-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2006191125A (ja) * 2006-01-27 2006-07-20 Ftl:Kk Ｓｏｉウェーハの製造方法
JP2006203250A (ja) * 2006-04-05 2006-08-03 Ftl:Kk ３次元半導体デバイスの製造方法
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN103193195B (zh) * 2013-03-08 2015-04-01 厦门大学 一种重掺杂硼硅片的再分布方法
US9843014B2 (en) * 2015-02-20 2017-12-12 Apple Inc. Electronic devices with sapphire-coated substrates
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168990A (en) 1977-04-04 1979-09-25 International Rectifier Corporation Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile
DE2756861C2 (de) 1977-12-20 1983-11-24 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zum Ändern de Lage des Fermi-Niveaus von amorphem Silicium durch Dotieren mittels Ionenimplantation
US4199773A (en) 1978-08-29 1980-04-22 Rca Corporation Insulated gate field effect silicon-on-sapphire transistor and method of making same
JPS5856409A (ja) 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS62262431A (ja) 1986-05-08 1987-11-14 Fujitsu Ltd 半導体装置の製造方法
US4775641A (en) 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
US5244820A (en) 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5064775A (en) 1990-09-04 1991-11-12 Industrial Technology Research Institute Method of fabricating an improved polycrystalline silicon thin film transistor
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5508216A (en) 1992-06-24 1996-04-16 Seiko Epson Corporation Thin film transistor, solid device, display device and manufacturing method of a thin film transistor
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5501989A (en) 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
KR950021242A (ko) 1993-12-28 1995-07-26 김광호 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6165876A (en) 1995-01-30 2000-12-26 Yamazaki; Shunpei Method of doping crystalline silicon film
JPH08204208A (ja) 1995-01-30 1996-08-09 Semiconductor Energy Lab Co Ltd 結晶性シリコン半導体装置の製造方法
US5565690A (en) 1995-02-02 1996-10-15 Motorola, Inc. Method for doping strained heterojunction semiconductor devices and structure
JP3471966B2 (ja) 1995-03-16 2003-12-02 株式会社半導体エネルギー研究所 薄膜半導体装置の作製方法
US5532175A (en) 1995-04-17 1996-07-02 Motorola, Inc. Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
TW548686B (en) 1996-07-11 2003-08-21 Semiconductor Energy Lab CMOS semiconductor device and apparatus using the same
JP3923141B2 (ja) 1996-07-11 2007-05-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH10200120A (ja) 1997-01-10 1998-07-31 Sharp Corp 半導体装置の製造方法
JPH11298003A (ja) 1998-04-07 1999-10-29 Toshiba Corp 液晶表示装置用アクティブマトリクス基板の製造方法および液晶表示装置の製造方法
WO2000001016A1 (en) 1998-06-30 2000-01-06 Matsushita Electric Industrial Co., Ltd. Thin-film transistor and method of manufacture thereof
JP2000357798A (ja) 1998-06-30 2000-12-26 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR20010043359A (ko) 1999-03-10 2001-05-25 모리시타 요이찌 박막 트랜지스터와 패널 및 그들의 제조 방법
KR100333276B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
JP3458766B2 (ja) 1999-06-08 2003-10-20 日本電気株式会社 電界効果トランジスタの製造方法
JP4627843B2 (ja) 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP3897965B2 (ja) 1999-08-13 2007-03-28 株式会社半導体エネルギー研究所 レーザー装置及びレーザーアニール方法
TW544727B (en) 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4101409B2 (ja) 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4057215B2 (ja) 2000-03-07 2008-03-05 三菱電機株式会社 半導体装置の製造方法および液晶表示装置の製造方法
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
TW480576B (en) 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TWI224806B (en) 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4011304B2 (ja) 2000-05-12 2007-11-21 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW501282B (en) 2000-06-07 2002-09-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
US6613620B2 (en) 2000-07-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4646460B2 (ja) 2000-08-02 2011-03-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2002036519A1 (en) * 2000-10-30 2002-05-10 Sumitomo Special Metals Co., Ltd Dielectric ceramic composition for microwave use
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2002324808A (ja) 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6376336B1 (en) * 2001-02-01 2002-04-23 Advanced Micro Devices, Inc. Frontside SOI gettering with phosphorus doping
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6855584B2 (en) 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW544938B (en) 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4256087B2 (ja) 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3873811B2 (ja) * 2002-05-15 2007-01-31 日本電気株式会社 半導体装置の製造方法

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US20080070352A1 (en) 2008-03-20
US20040038465A1 (en) 2004-02-26
US7329594B2 (en) 2008-02-12
JP2004039701A (ja) 2004-02-05
US7534705B2 (en) 2009-05-19

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