JP4264823B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4264823B2
JP4264823B2 JP2004064071A JP2004064071A JP4264823B2 JP 4264823 B2 JP4264823 B2 JP 4264823B2 JP 2004064071 A JP2004064071 A JP 2004064071A JP 2004064071 A JP2004064071 A JP 2004064071A JP 4264823 B2 JP4264823 B2 JP 4264823B2
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JP
Japan
Prior art keywords
insulating film
forming step
layer
sealing layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004064071A
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English (en)
Japanese (ja)
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JP2005252169A (ja
JP2005252169A5 (OSRAM
Inventor
健二 長崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Semiconductor Co Ltd filed Critical Oki Semiconductor Co Ltd
Priority to JP2004064071A priority Critical patent/JP4264823B2/ja
Priority to US10/980,316 priority patent/US7122910B2/en
Priority to CN2004100974363A priority patent/CN1667801B/zh
Publication of JP2005252169A publication Critical patent/JP2005252169A/ja
Priority to US11/511,267 priority patent/US7687320B2/en
Publication of JP2005252169A5 publication Critical patent/JP2005252169A5/ja
Application granted granted Critical
Publication of JP4264823B2 publication Critical patent/JP4264823B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H10W74/114
    • H10W74/129
    • H10W74/137
    • H10W70/05
    • H10W70/656
    • H10W72/019
    • H10W72/01935
    • H10W72/01951
    • H10W72/241
    • H10W72/242
    • H10W72/252
    • H10W72/29
    • H10W72/922
    • H10W72/9223
    • H10W72/923
    • H10W72/9413
    • H10W72/9415
    • H10W72/952
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/958Passivation layer

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004064071A 2004-03-08 2004-03-08 半導体装置の製造方法 Expired - Lifetime JP4264823B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004064071A JP4264823B2 (ja) 2004-03-08 2004-03-08 半導体装置の製造方法
US10/980,316 US7122910B2 (en) 2004-03-08 2004-11-04 Packaged semiconductor device
CN2004100974363A CN1667801B (zh) 2004-03-08 2004-11-15 半导体装置及其制造方法
US11/511,267 US7687320B2 (en) 2004-03-08 2006-08-29 Manufacturing method for packaged semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004064071A JP4264823B2 (ja) 2004-03-08 2004-03-08 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005252169A JP2005252169A (ja) 2005-09-15
JP2005252169A5 JP2005252169A5 (OSRAM) 2006-10-05
JP4264823B2 true JP4264823B2 (ja) 2009-05-20

Family

ID=34909341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004064071A Expired - Lifetime JP4264823B2 (ja) 2004-03-08 2004-03-08 半導体装置の製造方法

Country Status (3)

Country Link
US (2) US7122910B2 (OSRAM)
JP (1) JP4264823B2 (OSRAM)
CN (1) CN1667801B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7714448B2 (en) 2004-11-16 2010-05-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP4057017B2 (ja) * 2005-01-31 2008-03-05 富士通株式会社 電子装置及びその製造方法
JP4193897B2 (ja) * 2006-05-19 2008-12-10 カシオ計算機株式会社 半導体装置およびその製造方法
KR20080085380A (ko) * 2007-03-19 2008-09-24 삼성전자주식회사 재배선층을 구비하는 반도체 패키지 및 그의 제조방법
KR20090042574A (ko) * 2007-10-26 2009-04-30 삼성전자주식회사 반도체 모듈 및 이를 구비하는 전자 장치
JP5801989B2 (ja) * 2008-08-20 2015-10-28 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP5135246B2 (ja) 2009-01-30 2013-02-06 三洋電機株式会社 半導体モジュールおよびその製造方法、ならびに携帯機器
US10756040B2 (en) * 2017-02-13 2020-08-25 Mediatek Inc. Semiconductor package with rigid under bump metallurgy (UBM) stack
KR102543869B1 (ko) * 2018-08-07 2023-06-14 삼성전자주식회사 반도체 장치 및 이를 포함하는 반도체 패키지
KR102378837B1 (ko) * 2018-08-24 2022-03-24 삼성전자주식회사 반도체 장치 및 이를 포함하는 반도체 패키지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582511A (ja) 1991-09-19 1993-04-02 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
CN1146976C (zh) * 1997-10-30 2004-04-21 株式会社日产制作所 半导体装置及其制造方法
KR100269540B1 (ko) 1998-08-28 2000-10-16 윤종용 웨이퍼 상태에서의 칩 스케일 패키지 제조 방법
US6181569B1 (en) * 1999-06-07 2001-01-30 Kishore K. Chakravorty Low cost chip size package and method of fabricating the same
JP2001168126A (ja) 1999-12-06 2001-06-22 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
JP2001237348A (ja) 2000-02-23 2001-08-31 Hitachi Ltd 半導体装置およびその製造方法
JP3792545B2 (ja) 2001-07-09 2006-07-05 カシオ計算機株式会社 半導体装置の製造方法
JP2003124392A (ja) 2001-10-15 2003-04-25 Sony Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2005252169A (ja) 2005-09-15
US20050194684A1 (en) 2005-09-08
CN1667801B (zh) 2013-06-12
US20060292742A1 (en) 2006-12-28
CN1667801A (zh) 2005-09-14
US7122910B2 (en) 2006-10-17
US7687320B2 (en) 2010-03-30

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