JP4247167B2 - パッケージの構造 - Google Patents

パッケージの構造 Download PDF

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JP4247167B2
JP4247167B2 JP2004234967A JP2004234967A JP4247167B2 JP 4247167 B2 JP4247167 B2 JP 4247167B2 JP 2004234967 A JP2004234967 A JP 2004234967A JP 2004234967 A JP2004234967 A JP 2004234967A JP 4247167 B2 JP4247167 B2 JP 4247167B2
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insulating layer
alloy
layer
conductive layer
patterned
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JP2005317892A (ja
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ヤン ウェン−クン
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Advanced Chip Engineering Technology Inc
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Advanced Chip Engineering Technology Inc
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Description

本発明は、ウエハレベルパッケージに係り、詳細にはウエハレベルパッケージ構造に関し、該ウエハレベルパッケージ構造は、はんだボールと印刷回路基板との間に強化応力を生じさせる温度変化に起因するはんだボールの亀裂によって引き起こされる開回路（オープン・サーキット）を回避することができる。
最新の半導体ダイは、初期のリードフレームパッケージ技術に用いるには端子の密度が高すぎ、よって、初期のリードフレームパッケージ技術は、最新の半導体ダイに対しては既に不適当である。したがって、最新の半導体ダイに対する実装の必要条件を満たすために、ボール・グリッドアレイ（ＢＧＡ）の新しいパッケージ技術が開発されている。このＢＧＡパッケージは、球形端子のピッチがリードフレームパッケージのそれより短いという利点があり、ＢＧＡの端子は、破損したり変形する可能性が少ない。さらに、信号を伝送する距離が短くなることにより、作業効率が上がり、いっそうの高速化、効率化の要件に適合するという利点がある。パッケージ技術の多くは、ウエハ上のダイを個々のダイに分割し、さらに各ダイをそれぞれ実装し検査する。「ウエハレベルパッケージ（ＷＬＰ）」と称される別のパッケージ技術では、ダイを個々のダイに分割する前にウエハ上でダイを実装することができる。このＷＬＰ技術は、生産サイクル時間の短縮、低コスト、及び、アンダーフィルやモールディングの必要がないなど、いくつか利点がある。
さらに、現在市販されているパッケージ構造の一部が、図１に示されている。このパッケージ構造は、ＩＣデバイス１００の絶縁層１０３と保護層１０２とから構成される。絶縁層１０３の材料は、ＢＣＢやポリイミドなどの、厚さ５ミクロンの誘電体層である。保護層１０２の材料は、ポリイミド又は窒化ケイ素である。再分配層（ＲＤＬ）１０４は、絶縁層１０３、及び、ＩＣデバイスのアルミニウムパッド１０１と結合される。再分配層（ＲＤＬ）１０４の材料は、厚さ１５ミクロンのＣｕ／Ｎｉ／Ａｕ合金である。さらに、絶縁層１０５は、再分配層（ＲＤＬ）１０４を被覆する。そして、再分配層（ＲＤＬ）１０４は、複数の開口部を有する。これら開口部はそれぞれ、印刷回路基板や外部の部品と電気的に接続すべくはんだボール１０６を有する。絶縁層１０５の材料は、ＢＣＢ、エポキシ、又は、ポリイミドなどの誘電体層である。
上述のパッケージ構造は、一般に、はんだボール１０６を強力に固定するための更なる材料を必要とする。これは以下のような欠点がある。即ち、再分配層（ＲＤＬ）１０４と絶縁層１０５との接着が強すぎるため、はんだボールの強力な接着が、はんだボールに対し不利に作用する。はんだボール１０６が印刷回路基板に結合すると、はんだボール１０６と再分配層（ＲＤＬ）１０４との結合部分、即ち、領域１０７、における温度の影響によって応力が発生し、はんだボール１０６には、温度変化によって生じる強化応力のために亀裂が生じ、この結果、はんだボールとパッドとの間に開回路がもたらされる。
上記を考慮して、本発明は、上述の問題を解決するための改良されたウエハレベルパッケージ構造を提供する。
本発明の目的は、ウエハレベルパッケージ構造を提供することである。本発明のウエハレベルパッケージ構造は、強化応力によるはんだボールの亀裂に起因する開回路を回避することができる。
本発明は、ウエハレベルパッケージ構造を提供する。このパッケージ構造は、第１のパターン化された絶縁層、導電層、及び、第２のパターン化された絶縁層を含む。第１のパターン化された絶縁層は、集積回路（ＩＣ）の保護層に隣接して設けられる。導電層は、曲線状、巻き線状、又は、ジグザグ形の導電パターンを有するように、ＩＣの保護層及び金属パッド上に構成される。第２のパターンされた化絶縁層は、複数の開口部を有する導電層上に形成され、接触金属ボールは、印刷回路基板と電気的に接続すべくこれら開口部に形成することができる。
導電層は、接触金属ボールが印刷回路基板と結合する時に金属パッドを直接引き伸ばすことはない。このジグザグ形の導電層は、曲線状又はジグザグ形の導電層パターンと、パターン化された第１の絶縁層との間の弱い接着によって応力を吸収するクッションのような緩衝部材領域をもたらす。
本発明の上記目的及び他の特徴と利点は、添付した図面と関連して以下の詳細な説明を読むことにより、より明白になるであろう。
本発明は、ウエハレベル・パッケージのバックエンド構造を提供し、本発明の範囲は、添付の特許請求の範囲に特定される以外は特に限定されない。本発明によって開示されるパッケージの構造は、下側層の領域を部分的に被覆するパターン化された絶縁層と、該パターン化された絶縁層の微細構成に起因する応力を吸収すべく、ジグザグ形のパターンを有するように上記パターン化された絶縁層上に構成された導電層と、を含む。絶縁層の材料は、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド、又は樹脂から構成される。導電層の材料は合金である。
図２に、本発明による１つのウエハレベルパッケージ構造の概略図が示されている。このウエハレベルパッケージは、本発明の添付の特許請求の範囲に特定される以外は限定されない。本発明は、デバイス２００の保護層２０２の領域を部分的に被覆するパターン化された絶縁層２０３を含む。絶縁層２０３の材料は、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂などの誘電体である。パターン化された絶縁層２０３は、下側の保護層２０２を露出させるための複数の開口部を有する。保護層２０２の材料は、ポリイミド又は窒化ケイ素を含む。領域２０７は、図２に示すように外力を受ける可能性がある。
パターン化された絶縁層２０３上の再分配層（ＲＤＬ）２０４は、絶縁層２０３のパターン微細構成のためジグザグ形の導電層パターンで構成される。１つの好ましい実施の形態において、導電層の材料は、厚さが１５ミクロンのＴｉ／Ｃｕ合金又はＣｕ／Ｎｉ／Ａｕ合金を含む。Ｔｉ／Ｃｕ合金は、スパッタリング方法によって形成され、Ｃｕ／Ｎｉ／Ａｕ合金は電気メッキによって形成されてもよい。金属パッド２０１の材料は、アルミニウムや銅、あるいは、それらの組み合わせでもよい。
さらに、絶縁層２０５は導電層２０４上に形成され、複数の開口部を有する。これら開口部はそれぞれ、印刷回路基板（ＰＣＢ）又は外部部品（図示せず）に電気的に接続するための接触金属ボール２０６を有する。接触金属ボール２０６は、はんだボール２０６などの導電性ボールでもよい。絶縁層２０５の材料は、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂などの誘電体から形成されてもよい。
パッケージ構造の固定された領域２１０に隣接した導電層２０４は、保護層２０２が本発明によって開示された配置機構によって導電層２０４に密着してこれを「捕捉」するため、ＩＣデバイス２００の内部コネクタの金属パッド２０１を直接引き伸ばすことはない。はんだボール２０６が印刷回路基板に実装され、熱応力を生じるときに、保護層２０２に直接結合された導電層２０４によって温度の影響が低減されることになる。
さらに、パッケージ構造の緩衝部材領域２０９において、導電層２０４は、ジグザグ形のパターンを有して構成されるように、保護層２０２に部分的に結合されると共に、絶縁層２０３上に部分的に形成される。温度変化によって生じた応力は、導電層の形状により分配され、導電層のジグザグ構造は、熱応力を放出するためにクッションとしての働きをする。導電層２０４と絶縁層２０３との接着力が弱いので、導電層２０４は、外力が付加されたときに絶縁層２０３の表面からわずかに剥離する。導電層の伸張度は、ジグザグ機構を備えた曲線状の導電層パターンがわずかに剥離し熱応力を吸収するため増加する。したがって、パッケージ構造の製品寿命が延びることになる。はんだボール２０６が結合パッドから離れている場合は特にその傾向が強い。
本発明は、はんだボールの下にある導電層のジグザグの度合いを高める（即ち、ジグザグ形状の個数を増加させる）ために、絶縁層２０３と導電層２０４との間に形成されたパターン化された絶縁層２０８をさらに含む。絶縁層２０８の材料は、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂を含む。
したがって、本発明によれば、上述のパッケージ構造は、以下に挙げる利点を有する。即ち、本発明のウエハレベル・パッケージ構造は、はんだボールが印刷回路基板にはんだ結合された後に、温度変化に起因する強化応力によって生じたはんだボールの亀裂によってもたらされる開回路を回避することができる。さらに、上記構造は、はんだボールを強く固定するための更なる材料を不要とする。
特定の実施の形態を図示すると共に説明したが、特許請求の範囲によってのみ限定されることが意図されることから逸脱することなく種々の変更が可能であることは当業者には明白であろう。
従来のウエハレベルパッケージ構造の概略図である。 本発明による１つのウエハレベルパッケージ構造の概略図である。
符号の説明
２００ ＩＣデバイス
２０１ 金属パッド
２０２ 保護層
２０３ 絶縁層
２０４ 再分配層（ＲＤＬ）
２０５ 絶縁層
２０６ はんだボール
２０８ 絶縁層

Claims (5)

  1. 保護層上に、その上に形成される導電層が積層方向に振幅を有するジグザグ形となるよう、選択的に形成されたパターン化された第１の絶縁層と、
    前記第１の絶縁層及び前記保護層上に形成され、前記第１の絶縁層の有無によって、前記保護層及び前記第１の絶縁層の積層方向に振幅を有するジグザグ形に形成された前記導電層と、
    前記導電層上に形成され、複数の開口部を有する第２の絶縁層であって、各開口部が、外部部品と電気的に接続する接触金属ボールを有する第２の絶縁層と、
    を含むパッケージの構造であって、
    前記導電層は、前記第１の絶縁層の間の複数の空間に形成される、
    ことを特徴とするパッケージの構造。
  2. 前記パッケージの構造の固定された領域における前記導電層は、前記接触金属ボールが印刷回路基板上に設置されるときに金属パッドを直接引き伸ばさず、前記ジグザグ形の導電層が応力を吸収すべく前記パッケージの緩衝部材として作用する、請求項１に記載の構造。
  3. 前記パターン化された第１の絶縁層と前記導電層との間に形成されたパターン化された第３の絶縁層をさらに含み、前記第３の絶縁層の材料が、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂を含み、前記第１の絶縁層の材料が、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂を含み、前記保護層の材料が、ポリイミドであり、前記導電層の材料が、合金であり、前記合金が、Ｔｉ／Ｃｕ合金又はＣｕ／Ｎｉ／Ａｕ合金であり、前記Ｔｉ／Ｃｕ合金がスパッタリングにより形成され、前記Ｃｕ／Ｎｉ／Ａｕ合金が電気メッキにより形成され、前記合金の厚さはおよそ１０乃至２０ミクロンであり、前記金属パッドの材料が、アルミニウム又は銅であり、前記第２の絶縁層の材料が、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド又は樹脂を含み、前記接触金属ボールがはんだボールである、請求項１に記載の構造。
  4. 下側層上に、その上に形成される導電層が積層方向に振幅を有するジグザグ形となるよう、選択的に形成されたパターン化された絶縁層と、
    前記パターン化された絶縁層の有無によって、応力を吸収すべく前記下側層及び前記パターン化された絶縁層の積層方向に振幅を有するジグザグ形となるように前記パターン化された絶縁層及び下側層上に構成された前記導電層と、
    を含むパッケージの構造であって、
    前記導電層は、前記パターン化された絶縁層の間の複数の空間に形成される、
    ことを特徴とするパッケージの構造。
  5. 前記絶縁層の材料が、ＢＣＢ、シロキサンポリマー（ＳＩＮＲ）、エポキシ、ポリイミド、又は樹脂を含み、前記導電層の材料が合金であり、前記合金がＴｉ／Ｃｕ合金又はＣｕ／Ｎｉ／Ａｕ合金を含み、前記Ｔｉ／Ｃｕ合金がスパッタリングによって形成され、前記Ｃｕ／Ｎｉ／Ａｕ合金が電気メッキによって形成され、前記合金の厚さがおよそ１０乃至２０ミクロンである、請求項４に記載の構造。
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DE102004033647B4 (de) 2008-05-15
TW200536087A (en) 2005-11-01
US20050242427A1 (en) 2005-11-03
CN100447994C (zh) 2008-12-31
CN1694247A (zh) 2005-11-09
US20050242418A1 (en) 2005-11-03
KR100710977B1 (ko) 2007-04-24
KR20050105085A (ko) 2005-11-03
DE102004033647A1 (de) 2005-11-17
US7259468B2 (en) 2007-08-21
JP2005317892A (ja) 2005-11-10
TWI242278B (en) 2005-10-21

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