GB9514777D0 - Silicon alloys for electronic packaging - Google Patents

Silicon alloys for electronic packaging

Info

Publication number
GB9514777D0
GB9514777D0 GBGB9514777.3A GB9514777A GB9514777D0 GB 9514777 D0 GB9514777 D0 GB 9514777D0 GB 9514777 A GB9514777 A GB 9514777A GB 9514777 D0 GB9514777 D0 GB 9514777D0
Authority
GB
United Kingdom
Prior art keywords
alloy
silicon
electronic packaging
silicon alloys
aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GBGB9514777.3A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sandvik Osprey Ltd
Original Assignee
Osprey Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osprey Metals Ltd filed Critical Osprey Metals Ltd
Priority to GBGB9514777.3A priority Critical patent/GB9514777D0/en
Publication of GB9514777D0 publication Critical patent/GB9514777D0/en
Priority to EP96924997A priority patent/EP0839078B1/en
Priority to DE69615375T priority patent/DE69615375T2/en
Priority to DK96924997T priority patent/DK0839078T3/en
Priority to PCT/GB1996/001730 priority patent/WO1997003775A1/en
Priority to ES96924997T priority patent/ES2164904T3/en
Priority to JP50643997A priority patent/JP3892039B2/en
Priority to GB9800723A priority patent/GB2317900B/en
Priority to AT96924997T priority patent/ATE205762T1/en
Priority to US09/535,685 priority patent/US6312535B1/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
    • C22C1/1042—Alloys containing non-metals starting from a melt by atomising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C25/00—Alloys based on beryllium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Conductive Materials (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

A method of producing a silicon based alloy is described which comprises melting a silicon alloy containing greater than 50 wt. % silicon and preferably including aluminium. The melted alloy is then inert gas atomized to produce powder or a spray formed deposit in which the silicon forms a substantially continuous phase made up of fine, randomly oriented crystals in the microstructure. The alloy produced by the method has particularly useful application in electronics packaging materials and a typical example comprises an alloy of 70 wt. % silicon and 30 wt. % aluminium. Such an alloy is an engineering material which, for example, is machinable.
GBGB9514777.3A 1995-07-19 1995-07-19 Silicon alloys for electronic packaging Pending GB9514777D0 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GBGB9514777.3A GB9514777D0 (en) 1995-07-19 1995-07-19 Silicon alloys for electronic packaging
AT96924997T ATE205762T1 (en) 1995-07-19 1996-07-18 METHOD FOR PRODUCING SI-AL ALLOYS FOR PACKAGING ELECTRONIC COMPONENTS
PCT/GB1996/001730 WO1997003775A1 (en) 1995-07-19 1996-07-18 Silicon alloys for electronic packaging
DE69615375T DE69615375T2 (en) 1995-07-19 1996-07-18 Process for the production of Si-Al alloys for the packaging of electronic components
DK96924997T DK0839078T3 (en) 1995-07-19 1996-07-18 Process for manufacturing Si-Al alloys for packing electronic components
EP96924997A EP0839078B1 (en) 1995-07-19 1996-07-18 Method of manufacturing Si-Al alloys for electronic packaging
ES96924997T ES2164904T3 (en) 1995-07-19 1996-07-18 SILICON ALLOYS FOR ELECTRONIC ENCAPSULATE.
JP50643997A JP3892039B2 (en) 1995-07-19 1996-07-18 Silicon alloy for electronic packaging
GB9800723A GB2317900B (en) 1995-07-19 1996-07-18 Silicon alloys for electronic packaging
US09/535,685 US6312535B1 (en) 1995-07-19 2000-03-27 Silicon alloys for electronic packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9514777.3A GB9514777D0 (en) 1995-07-19 1995-07-19 Silicon alloys for electronic packaging

Publications (1)

Publication Number Publication Date
GB9514777D0 true GB9514777D0 (en) 1995-09-20

Family

ID=10777919

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9514777.3A Pending GB9514777D0 (en) 1995-07-19 1995-07-19 Silicon alloys for electronic packaging
GB9800723A Expired - Fee Related GB2317900B (en) 1995-07-19 1996-07-18 Silicon alloys for electronic packaging

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9800723A Expired - Fee Related GB2317900B (en) 1995-07-19 1996-07-18 Silicon alloys for electronic packaging

Country Status (9)

Country Link
US (1) US6312535B1 (en)
EP (1) EP0839078B1 (en)
JP (1) JP3892039B2 (en)
AT (1) ATE205762T1 (en)
DE (1) DE69615375T2 (en)
DK (1) DK0839078T3 (en)
ES (1) ES2164904T3 (en)
GB (2) GB9514777D0 (en)
WO (1) WO1997003775A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2319668B (en) * 1996-11-23 2001-09-12 Marconi Gec Ltd Housing for electrical apparatus
CN1131570C (en) * 1998-09-08 2003-12-17 住友金属工业株式会社 Negative electrode material for nonaqueous electrode secondary battery and method for producing same
JP2002294358A (en) * 2001-04-02 2002-10-09 Taiheiyo Cement Corp Thermally conductive composite material
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
KR101022583B1 (en) * 2001-05-24 2011-03-16 프라이즈 메탈즈, 인크. Thermal interface material and solder preforms
CN1255563C (en) * 2001-05-24 2006-05-10 弗莱氏金属公司 Thermal interface material and heat sink configuration
KR100453518B1 (en) * 2001-11-01 2004-10-20 한국과학기술연구원 Method for fabrication of si-al alloy structural material
US7259468B2 (en) * 2004-04-30 2007-08-21 Advanced Chip Engineering Technology Inc. Structure of package
JP4585379B2 (en) * 2005-06-02 2010-11-24 太平洋セメント株式会社 Method for producing metal-ceramic composite material
US10217534B2 (en) 2011-09-23 2019-02-26 Edison Welding Institute, Inc. Method for joining silicon carbide components to one another
WO2013089869A2 (en) * 2011-09-23 2013-06-20 Edison Welding Institute, Inc. System for fabricating silicon carbide assemblies
EP2606996A1 (en) * 2011-12-23 2013-06-26 EPoS S.r.L. A method for sintering metal matrix composite materials

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0183016B1 (en) * 1984-10-03 1989-09-20 Sumitomo Electric Industries Limited Material for a semiconductor device and process for its manufacture
US5143139A (en) * 1988-06-06 1992-09-01 Osprey Metals Limited Spray deposition method and apparatus thereof
US5022455A (en) * 1989-07-31 1991-06-11 Sumitomo Electric Industries, Ltd. Method of producing aluminum base alloy containing silicon
GB9015832D0 (en) * 1990-07-19 1990-09-05 Osprey Metals Ltd Introducing means
WO1992007676A1 (en) * 1990-10-31 1992-05-14 Sumitomo Electric Industries, Ltd. Hypereutectic aluminum/silicon alloy powder and production thereof
JPH05331635A (en) * 1992-05-29 1993-12-14 Kobe Steel Ltd Al-containing si base alloy target and its manufacture
NO175543C (en) * 1992-11-18 1994-10-26 Elkem As Silicon-based alloy, process for making such alloy, and process for producing consolidated products from silicon-based alloy
JPH0892683A (en) * 1994-09-27 1996-04-09 Sumitomo Electric Ind Ltd Nitrified aluminum-silicon powder alloy and its production

Also Published As

Publication number Publication date
GB9800723D0 (en) 1998-03-11
JP3892039B2 (en) 2007-03-14
DE69615375D1 (en) 2001-10-25
JPH11509480A (en) 1999-08-24
ATE205762T1 (en) 2001-10-15
EP0839078A1 (en) 1998-05-06
DE69615375T2 (en) 2002-08-14
GB2317900B (en) 2000-03-01
ES2164904T3 (en) 2002-03-01
DK0839078T3 (en) 2001-12-27
EP0839078B1 (en) 2001-09-19
US6312535B1 (en) 2001-11-06
WO1997003775A1 (en) 1997-02-06
GB2317900A (en) 1998-04-08

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