JP4211971B2 - 光感応性酸発生剤およびそれらを含むフォトレジスト - Google Patents

光感応性酸発生剤およびそれらを含むフォトレジスト Download PDF

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Publication number
JP4211971B2
JP4211971B2 JP2002545309A JP2002545309A JP4211971B2 JP 4211971 B2 JP4211971 B2 JP 4211971B2 JP 2002545309 A JP2002545309 A JP 2002545309A JP 2002545309 A JP2002545309 A JP 2002545309A JP 4211971 B2 JP4211971 B2 JP 4211971B2
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Japan
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optionally substituted
photoresist
formula
group
compound
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JP2002545309A
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Japanese (ja)
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JP2004531749A5 (https=
JP2004531749A (ja
Inventor
エフ キャメロン ジェームズ
エム ジドウスキー トーマス
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/02—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof
    • C07C303/20—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof by addition of sulfurous acid or salts thereof to compounds having carbon-to-carbon multiple bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/24—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
JP2002545309A 2000-11-03 2001-11-03 光感応性酸発生剤およびそれらを含むフォトレジスト Expired - Lifetime JP4211971B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24584800P 2000-11-03 2000-11-03
PCT/US2001/047370 WO2002042845A2 (en) 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008032677A Division JP5184129B2 (ja) 2000-11-03 2008-02-14 光感応性酸発生剤およびそれらを含むフォトレジスト

Publications (3)

Publication Number Publication Date
JP2004531749A JP2004531749A (ja) 2004-10-14
JP2004531749A5 JP2004531749A5 (https=) 2005-12-22
JP4211971B2 true JP4211971B2 (ja) 2009-01-21

Family

ID=22928331

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2002545309A Expired - Lifetime JP4211971B2 (ja) 2000-11-03 2001-11-03 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2008032677A Expired - Lifetime JP5184129B2 (ja) 2000-11-03 2008-02-14 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2012255880A Ceased JP5918111B2 (ja) 2000-11-03 2012-11-22 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2014125020A Pending JP2014225023A (ja) 2000-11-03 2014-06-18 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2016201651A Pending JP2017083826A (ja) 2000-11-03 2016-10-13 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2019125061A Pending JP2019207415A (ja) 2000-11-03 2019-07-04 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2020129030A Pending JP2020197729A (ja) 2000-11-03 2020-07-30 光感応性酸発生剤およびそれらを含むフォトレジスト

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2008032677A Expired - Lifetime JP5184129B2 (ja) 2000-11-03 2008-02-14 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2012255880A Ceased JP5918111B2 (ja) 2000-11-03 2012-11-22 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2014125020A Pending JP2014225023A (ja) 2000-11-03 2014-06-18 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2016201651A Pending JP2017083826A (ja) 2000-11-03 2016-10-13 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2019125061A Pending JP2019207415A (ja) 2000-11-03 2019-07-04 光感応性酸発生剤およびそれらを含むフォトレジスト
JP2020129030A Pending JP2020197729A (ja) 2000-11-03 2020-07-30 光感応性酸発生剤およびそれらを含むフォトレジスト

Country Status (4)

Country Link
US (1) US6849374B2 (https=)
JP (7) JP4211971B2 (https=)
AU (1) AU2002239563A1 (https=)
WO (1) WO2002042845A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2631253A2 (en) 2012-02-27 2013-08-28 Shin-Etsu Chemical Co., Ltd. Preparation of polymer, resulting polymer, resist composition, and patterning process
EP2664633A1 (en) 2012-02-27 2013-11-20 Shin-Etsu Chemical Co., Ltd. Polymer, making method, resist composition, and patterning process

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* Cited by examiner, † Cited by third party
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JP3425606B2 (ja) 1993-04-09 2003-07-14 佐藤 朝夫 水処理方法
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
AU2002239563A1 (en) * 2000-11-03 2002-06-03 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
TWI304060B (en) * 2001-06-29 2008-12-11 Jsr Corp Acid generator and radiation-sensitive resin composition
JP4924256B2 (ja) * 2001-06-29 2012-04-25 Ｊｓｒ株式会社 感放射線性樹脂組成物
CN1916760B (zh) 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP4590821B2 (ja) * 2003-01-14 2010-12-01 コニカミノルタホールディングス株式会社 活性光線硬化型インク組成物、及びそれを用いた画像形成方法
JP4366947B2 (ja) * 2003-02-13 2009-11-18 コニカミノルタホールディングス株式会社 活性光線硬化型インク組成物、及びそれを用いた画像形成方法
US7122294B2 (en) * 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7776504B2 (en) * 2004-02-23 2010-08-17 Nissan Chemical Industries, Ltd. Dye-containing resist composition and color filter using same
WO2005089355A2 (en) * 2004-03-16 2005-09-29 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos)
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4452632B2 (ja) * 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP4774996B2 (ja) * 2005-07-26 2011-09-21 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP1780199B1 (en) * 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
EP1780198B1 (en) * 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
JP4905667B2 (ja) * 2005-10-31 2012-03-28 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4905666B2 (ja) * 2005-10-31 2012-03-28 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
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JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
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JP5746818B2 (ja) * 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
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JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
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