TWI304060B - Acid generator and radiation-sensitive resin composition - Google Patents

Acid generator and radiation-sensitive resin composition Download PDF

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TWI304060B
TWI304060B TW91114303A TW91114303A TWI304060B TW I304060 B TWI304060 B TW I304060B TW 91114303 A TW91114303 A TW 91114303A TW 91114303 A TW91114303 A TW 91114303A TW I304060 B TWI304060 B TW I304060B
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acid
carbon atoms
compound
resin
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TW91114303A
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Chinese (zh)
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Satoshi Ebata
Yoneda Eiji
Nagai Tomoki
Toneri Tatsuya
Iwasawa Haruo
Yukio Nishimura
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Jsr Corp
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Description

1304060 發明說明(1) 發明之背景 發明之領娀 、本發明係關於酸產生劑、磺酸、磺酸衍生物、及輻射敏 感性樹脂組成物。更特定言之,本發明係關於一種適用於 輻射敏感性樹脂組成物之光酸產生劑,此輻射敏感性樹脂 組成物係使用作為用於利用各種類型之輻射,例如,深紫 外光線諸如KrF準分子雷射、ArF準分子雷射、F2準分子雷 射、或EUV(極端紫外光)、χ—射線諸如同步加速器輻射、 或帶電粒子射線諸如電子束之微製造之化學放大光阻劑; 一種由该酸產生劑所產生之磺酸;一種有用作為合成該酸 產生劑之原料或中間體的磺酸衍生物;及一種含該酸產生 劑之正型(positive-tone)或負型輻射敏感性樹脂組成 物0 背景技藝之說明 在以積體電路裝置之製造 要可微製造0 · 2 0微米或以下 技術,以獲致較高的積體。 習知之微影方法係利用近 藝中已知很難使用近紫外光 線寬。 為代表之微製造的領域中,需 之線寬的微影(lithographic) 紫外光線,諸如i線輻射。技 線微製造低於四分之一微米的 或以下之線寬。關於具較短射於微製造〇.2〇微; 準分子雷射之線光譜為;;輕射’爾以汞^ 束等等。其中,κ r F準分t外光線^射線、電: 于每射(波長:248奈米(nm))、1304060 DESCRIPTION OF THE INVENTION (1) Background of the Invention The present invention relates to an acid generator, a sulfonic acid, a sulfonic acid derivative, and a radiation-sensitive resin composition. More particularly, the present invention relates to a photoacid generator suitable for use in a radiation-sensitive resin composition, which is used for utilizing various types of radiation, for example, deep ultraviolet light such as KrF a molecularly amplified laser, an ArF excimer laser, an F2 excimer laser, or an EUV (extreme ultraviolet light), a x-ray such as a synchrotron radiation, or a charged particle beam such as an electron beam micro-fabricated chemically amplified photoresist; a sulfonic acid produced by the acid generator; a sulfonic acid derivative useful as a raw material or intermediate for synthesizing the acid generator; and a positive-tone or negative-type radiation-sensitive one containing the acid generator Resin Composition 0 Description of the Art In the fabrication of integrated circuit devices, it is possible to microfabricate 0. 20 microns or less to achieve a higher buildup. The conventional lithography method utilizes the near-ultraviolet linewidth that is known to be difficult to use in the art. In the field of microfabrication, there is a need for linewidth lithographic ultraviolet light, such as i-ray radiation. The wire microfabrication is less than a quarter of a micron or less. Regarding the shorter shots in microfabrication 〇.2〇 micro; the line spectrum of the excimer laser is;; the light shot is the mercury beam and so on. Among them, κ r F quasi-division of external light ^ ray, electricity: per shot (wavelength: 248 nm (nm)),

C:\2D-CODE\91-09\91114303.ptd 第6頁 1304060 五、發明說明(2)C:\2D-CODE\91-09\91114303.ptd Page 6 1304060 V. Description of invention (2)

ArF準分子雷射(波長·· 1 9 3奈米)、F2準分子雷射(波長·· 157奈米)、EUV(波長:13奈来)、及電子束備受目屬目。 關於可應用至較短波長輻射之輻射敏感性樹脂組成物, 已提出許多利用在具有酸可裂解官能基之成份與當輻照 :以下稱為「曝光」)時產生酸之光酸產生劑之間之化學放 大效應的組成物。以下將此'~組成物稱為化學放大輕射敏 感性組成物。 關於化學放大輻射敏感性組成物,日本專利公告第 276 60 / 1 9 9 0號揭示一種包括含羧酸之第三丁酯基或酚之第 二丁基碳酸酯基之聚合物及光酸產生劑之組成物。此組成 物利用聚合物藉由當曝光時產生之酸之作用釋放第三丁酯 基或弟二丁基碳酸醋基之效果’而形成酸性基團(諸如缓 基或酚羥基),其可使光阻劑塗層上之經曝光區域易溶解 於驗性顯影劑中。 關於化學放大輻射敏感性組成物之光酸產生劑所需之特 性,可舉出對輻射的優良透明度、高量子產率、及產生具 有強酸度、高沸點、及於光阻劑塗層中之適 ,以下稱為擴散長度)之酸的能力。 ^ 為確保高酸度、高沸點、及適當的擴散長度,離子性光 酉义產生劑中之陰離子基團的結構及包含磺醯基結構或磺酸 鹽結構之非離子性光酸產生劑中之磺醯基基團的結構相當 重要。舉例來說,當光酸產生劑具有三氟曱磺醯基結構 時,儘管產生可確保光阻劑之適當解析度性能之夠強的 酸,但其有由於產生酸之低沸點及長擴散長度因而光罩相 1304060 五、發明說明(3) —------ 關性(mask dependency)高的缺點。當光酸產生劑包含里 大有機基團(諸如10-樟腦磺醯基結構)之磺醯基結構時,、 儘管光罩相關性由於產生酸之高沸點及短擴散長度而低, 但作為光阻劑之解析度性能由於不佳的酸度而不足。 另一方面,具有全氟烷磺醯基結構(諸如全氟正辛烷磺 酸(PF0S))之光酸產生劑由於適當的酸度、酸之沸點、及 擴散長度’因而在近年來受到_目。 然而,由環境的觀點來看此等具有pF〇s型全氟烷磺醯基 結構之光酸產生劑,其具有低可燃性,且懷疑其有生物累 %性。由美國環保署(U.S· Environmental Protection Agency)發出之一份報告,標題為「磺酸全氟辛酯;建議 重要的新使用規定(Perfluorooc:tyl SulfQnates;ArF excimer laser (wavelength · · 193 nm), F2 excimer laser (wavelength · · 157 nm), EUV (wavelength: 13 Nai), and electron beam are subject to attention. With regard to radiation-sensitive resin compositions which can be applied to shorter-wavelength radiation, many photo-acid generators which utilize an acid-cleavable functional group and when irradiated: hereinafter referred to as "exposure" have been proposed. The composition of the chemical amplification effect between. Hereinafter, this '~ composition is referred to as a chemically amplified light-sensitive sensitive composition. Regarding the chemically amplified radiation-sensitive composition, Japanese Patent Publication No. 276 60/190 discloses a polymer comprising a third butyl carbonate group containing a carboxylic acid or a second butyl carbonate group of a phenol, and photoacid generation. The composition of the agent. This composition can form an acidic group (such as a slow group or a phenolic hydroxyl group) by utilizing the effect of the polymer releasing the third butylate group or the dibutyl carbonate group by the action of an acid generated upon exposure. The exposed areas on the photoresist coating are readily soluble in the developer. The characteristics required for chemically amplifying the photoacid generator of the radiation-sensitive composition include excellent transparency to radiation, high quantum yield, and generation of a strong acidity, a high boiling point, and a coating in a photoresist. Suitably, the ability to hereinafter be referred to as the acid of the diffusion length). ^ In order to ensure high acidity, high boiling point, and appropriate diffusion length, the structure of the anionic group in the ionic photoreceptor and the nonionic photoacid generator containing the sulfonate structure or the sulfonate structure The structure of the sulfonyl group is quite important. For example, when the photoacid generator has a trifluorosulfonyl sulfhydryl structure, although it produces a sufficiently strong acid which ensures the proper resolution performance of the photoresist, it has a low boiling point and a long diffusion length due to the generation of acid. Therefore, the reticle phase 1304060 five, the invention description (3) ------- the disadvantage of the high (mask dependency). When the photoacid generator contains a sulfonium-based structure of a large organic group such as a 10-camphorsulfonyl structure, although the photomask correlation is low due to the high boiling point and short diffusion length of the acid, it is used as light. The resolution performance of the resist is insufficient due to poor acidity. On the other hand, a photoacid generator having a perfluoroalkanesulfonyl structure (such as perfluorooctanesulfonic acid (PFOS)) has been subjected to recent years due to appropriate acidity, boiling point of acid, and diffusion length. . However, from the viewpoint of the environment, such photoacid generators having a pF〇s-type perfluoroalkanesulfonyl structure have low flammability and are suspected to be bioaccumulating. A report issued by the U.S. Environmental Protection Agency entitled "Perfluorooctyl sulfonate; recommended important new use regulations (Perfluorooc: tyl SulfQnates;

Proposed Significant New Use Rule)」提議管制此等化 合物之使用。因此,在微製造的領域中,希望發展出一種 在功能上可優良地使用作為光酸產生劑,而沒有此等缺點 的成份。 本發明之目的為提供一種新穎的光酸產生劑,其當使用 作為對輻射或熱敏感的光酸產生劑時,對深紫外光線諸如 KrF準分子雷射、ArF準分子雷射、F2準分子雷射、或EUV 、及電子束展現高透明度,展現相當高的可燃性且沒有生 物累積性,及產生具高酸度、高沸點、於光阻劑塗層中之 適度短的擴散長度、及對光罩圖案密度之低相關性的酸; 一種由光酸產生劑所產生之磺酸;一種有用作為合成光酸 產生劑之原料或中間體的磺酸衍生物;及一種含光酸產生Proposed Significant New Use Rule) proposes to regulate the use of these compounds. Therefore, in the field of microfabrication, it has been desired to develop an ingredient which is functionally excellent as a photoacid generator without such disadvantages. It is an object of the present invention to provide a novel photoacid generator which, when used as a photoacid generator which is sensitive to radiation or heat, to deep ultraviolet light such as KrF excimer laser, ArF excimer laser, F2 excimer Laser, or EUV, and electron beams exhibit high transparency, exhibit high flammability and are not bioaccumulative, and produce a high acidity, high boiling point, moderately short diffusion length in the photoresist coating, and a low correlation acid of a mask pattern density; a sulfonic acid produced by a photoacid generator; a sulfonic acid derivative useful as a raw material or intermediate of a synthetic photoacid generator; and a photoacid-containing product

1304060 五、發明說明(4) 劑之正型或負型輻射敏感性樹脂組成物。 發明之概述 首先,本發明提供一種酸產生劑(以下稱為「酸產 (I)」),其係包含由以下化學式(I)所表示之处二 劑 為「結構(I)」)的化合物, 卜& Ζ1 R 一C 一 S0。 Z2 或 其中R代表具有50重量百分比或以下之氟含量的單 基團、硝基、氰基、或氫原子,及Zi及ζ2分別為氟^ 具1-10個碳原子之直鏈或分支鏈全氟烷基。 ” 其次,本發明提供一種由以下化學式(丨—a)所表示 兰 酸(以下稱為「磺酸(I-a)」), ^不之石黃 Z1 (I -a) ——C 一S0〇 Η Ζ2 其中R代表具有5 0重量百分比或以下之氟含量的單價有機 基團、硝基、氰基、或氫原子,及z!及22分別為氟原子或 具1_10個碳原子之直鏈或分支鏈全氟烷基。 第三,本發明提供一種由以下化學式(1C)所表示之磺酸1304060 V. INSTRUCTIONS (4) Positive or negative radiation-sensitive resin composition of the agent. SUMMARY OF THE INVENTION First, the present invention provides an acid generator (hereinafter referred to as "acid production (I)"), which comprises a compound represented by the following chemical formula (I) as "structure (I)") , Bu & Ζ1 R - C - S0. Z2 or a single group, a nitro group, a cyano group or a hydrogen atom wherein R represents a fluorine content of 50% by weight or less, and Zi and ζ2 are a straight or branched chain of 1 to 10 carbon atoms, respectively. Perfluoroalkyl. Next, the present invention provides a blue acid represented by the following chemical formula (丨-a) (hereinafter referred to as "sulfonic acid (Ia)"), and no stone yellow Z1 (I - a) - C - S0 Ζ2 wherein R represents a monovalent organic group having a fluorine content of 50% by weight or less, a nitro group, a cyano group, or a hydrogen atom, and z and 22 are each a fluorine atom or a straight chain or a branch having 1 to 10 carbon atoms; Chain perfluoroalkyl. Third, the present invention provides a sulfonic acid represented by the following chemical formula (1C)

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鹽(以下稱為「磺酸鹽(丨c)」) z1 R —c —so3m (10Salt (hereinafter referred to as "sulfonate (丨c)") z1 R — c — so3m (10

I z2 其中R代表具有50重量百分比或以下之氟含量的單價有機 基團、硝基、氰基、或氫原子,Z!及22分別為氟原子或具 卜ίο個碳原子之直鏈或分支鏈全氟烷基,及μ為Na、κ /、I z2 wherein R represents a monovalent organic group having a fluorine content of 50% by weight or less, a nitro group, a cyano group, or a hydrogen atom, and Z! and 22 are a fluorine atom or a straight chain or a branch having a carbon atom, respectively. Chain perfluoroalkyl, and μ is Na, κ /,

Li。 5乂 第四,本發明提供一種由以下化學式(4A)所表示之磺醯 _化合物(以下稱為「磺醯鹵化合物(4 A)」), Z1Li. In the fourth aspect, the present invention provides a sulfonium compound represented by the following chemical formula (4A) (hereinafter referred to as "sulfonium halide compound (4 A)"), Z1

I R —C —S02 A (4A)I R — C — S02 A (4A)

I z2 其中R代表具有50重量百分比或以下之氟含量的單價有機 基團、硝基、氰基、或氫原子,Ζι及Z2分別為氟原子或具 1 -1 0個碳原子之直鏈或分支鏈全氟烧基,及A為鹵原子。 第五’本發明提供一種正型輻射敏感性樹脂組成物,其 包括:(a )酸產生劑(I),及(b)包含酸可裂解基團之鹼可 溶解或鹼可低度溶解之樹脂,當此酸可裂解基團解離時, 此樹脂成為可溶於鹼。I z2 wherein R represents a monovalent organic group having a fluorine content of 50% by weight or less, a nitro group, a cyano group, or a hydrogen atom, and Ζι and Z2 are each a fluorine atom or a linear chain having 1 to 10 carbon atoms or A branched chain perfluoroalkyl group, and A is a halogen atom. A fifth 'the present invention provides a positive-type radiation-sensitive resin composition comprising: (a) an acid generator (I), and (b) an alkali-soluble or alkali-soluble solution containing an acid cleavable group Resin, when the acid cleavable group dissociates, the resin becomes soluble in alkali.

13040601304060

種JL型輻射敏感性樹脂組成物,其 ’(b)鹼可溶解樹脂,及(c)鹼溶解 第六,本發明提供一 包括:(a )酸產生劑(I) 度控制劑。 勹f七/本發明提供一種負型輻射敏感性樹脂組成物,其 =· 3酸產生劑(1 ),(b)鹼可溶解樹脂,及(c)在酸之 存在下交聯鹼可溶解樹脂之化合物。 本發明之其他目的、特徵及優點將可由以下說明而更加 明白。 j兒明 而作更詳細說明 佳具體例_^1^ 本發明現將經由具體例 酸產生豳丨Μ、 加熱時產生續酸(I _ a)之成 酸產生劑(I )係當進行曝光或 份0 。由於在結構(I)中之磺醯基之α〜位次中存在強的含氟拉 H ΐ團,因而酸產生劑(1)可產生具高酸度之酸諸如磺 酸等,。此外,所產生之酸由於高沸點因而在微影程序中 難以昇華’且其於光阻劑塗層中具有適度短的酸擴散長 度1再者’由於產生酸中之氟的量較全氟烷基磺酸中之氟 的里低,因而可燃性相當高,且其於人體中的累積低。 曰關=化學式(I)中之R之具有5〇重量百分比或以下之氟含 量之單價有機基團的例子,可舉出—R11、-⑶一R11、 :00一^'、一C0N(RU)(R12)、一S — R11 、一SO-R11 、一S02-R11(其中 R11及R12分別代表具卜3〇個碳原子之經取代或未經取代的直 鍵、分支鍵、或環單價烴基,具6〜3 〇個碳原子之經取代或A JL type radiation-sensitive resin composition, wherein '(b) an alkali-soluble resin, and (c) an alkali is dissolved. Sixth, the present invention provides: (a) an acid generator (I) degree control agent.勹f七/ The present invention provides a negative-type radiation-sensitive resin composition, which has a ?3 acid generator (1), (b) an alkali-soluble resin, and (c) a cross-linkable base which is soluble in the presence of an acid a compound of a resin. Other objects, features, and advantages of the present invention will be apparent from the description. The invention will now be described in more detail. _^1^ The present invention will now produce an acid generator (I) which generates an acid (I _ a) by heating with a specific example of acid, and is exposed when exposed. Or share 0. The acid generator (1) can produce an acid having a high acidity such as sulfonic acid or the like because of the presence of a strong fluorine-containing fluorene group in the ? to the sulfonate group in the structure (I). In addition, the acid produced is difficult to sublimate in the lithography process due to its high boiling point and it has a moderately short acid diffusion length in the photoresist coating. Further, the amount of fluorine in the acid is higher than that of the perfluoroalkane. The fluorine in the sulfonic acid has a low inside, and thus the flammability is relatively high, and its accumulation in the human body is low. =================================================================================================================== (R12), a S-R11, a SO-R11, an S02-R11 (wherein R11 and R12 represent a substituted or unsubstituted direct bond, a branch bond, or a ring unit price, respectively, having 3 carbon atoms a hydrocarbon group substituted with 6 to 3 carbon atoms or

1304060 五、發明說明(7) 未經取代的芳基,或具4 - 3 0個碳原子之經取代或未經取代 的單價雜環有機基團)等等。 關於R11及R12之具卜30個碳原子之未經取代直鏈、分支 鏈、或環單價烴基之例子,可舉出曱基、乙基、正丙基、 異丙基、正丁基、第三丁基、正戊基、異戊基、正己基、 異己基、正辛基、異辛基、2-乙基己基、正十二基、環丙 基、環戊基、環己基、具去曱烯結構之基團、具去甲4 結構之基團、具三環癸烷結構之基團、具四環十二烷結構 之基團等等。 關於以上烴基之取代基的例子,可舉出芳基、烯基、含 雜原子諸如鹵素、氧、氮、硫、磷、矽之有機基團等等。 關於經以上取代基取代之具卜3 0個碳原子之直鏈、分支 鏈、或環單價烴基之例子,可舉出苄基、曱氧甲基、甲硫 曱基、乙氧曱基、苯氧甲基、曱氧羰甲基、乙氧羰曱基、 乙醯曱基、氟甲基、三氟曱基、氯甲基、三氯甲基、2-氟 丙基、三氟乙醯曱基、三氯乙醯曱基、五氟苯甲醯甲基、 胺曱基、環己胺曱基、二苯膦曱基、三曱矽烷曱基、2 -苯 乙基、3-苯丙基、及2 -胺乙基。 關於R11及R12之具6-30個碳原子之未經取代芳基的例子, 可舉出苯基、1-萘基、2-萘基、1-蔥基、1-苯蔥基等等。 關於R11及R12之具4-30個碳原子之單價雜環有機基團的例 子,可舉出咳喃基、σ塞吩基、狐喃基、吼略基、嘴嗯基、 口比哇基、異嘆σ坐基、異叫σ坐基、ρ比併基、癌咬基、塔σ丼基 等等。1304060 V. DESCRIPTION OF THE INVENTION (7) Unsubstituted aryl group, or substituted or unsubstituted monovalent heterocyclic organic group having 4 to 30 carbon atoms) and the like. Examples of the unsubstituted linear, branched or cyclic monovalent hydrocarbon group having 30 carbon atoms of R11 and R12 include a mercapto group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, and the like. Tributyl, n-pentyl, isopentyl, n-hexyl, isohexyl, n-octyl, isooctyl, 2-ethylhexyl, n-dodecyl, cyclopropyl, cyclopentyl, cyclohexyl, with a group of a terpene structure, a group having a norylene structure, a group having a tricyclodecane structure, a group having a tetracyclododecane structure, or the like. As examples of the substituent of the above hydrocarbon group, an aryl group, an alkenyl group, an organic group containing a hetero atom such as a halogen, oxygen, nitrogen, sulfur, phosphorus, ruthenium or the like can be given. Examples of the linear, branched or cyclic monovalent hydrocarbon group having 30 carbon atoms substituted by the above substituents include a benzyl group, a fluorenyloxymethyl group, a methylthiomethyl group, an ethoxylated group, and a benzene group. Oxymethyl, oxacarbonylmethyl, ethoxycarbonyl, ethyl fluorenyl, fluoromethyl, trifluoromethyl, chloromethyl, trichloromethyl, 2-fluoropropyl, trifluoroacetam Base, trichloroethenyl, pentafluorobenzhydrylmethyl, amidoxime, cyclohexylamine decyl, diphenylphosphinium decyl, tridecyl fluorenyl, 2-phenylethyl, 3-phenylpropyl And 2-aminoethyl. Examples of the unsubstituted aryl group having 6 to 30 carbon atoms of R11 and R12 include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-onion group, a 1-phenylidene group and the like. Examples of the monovalent heterocyclic organic group having 4 to 30 carbon atoms of R11 and R12 include a coughyl group, a σ-sepeno group, a fox thiol group, an oxime group, a phenanthrene group, and a valenyl group. , sigh σ sitting base, different called σ sitting base, ρ than base, cancer bite base, tower σ 丼 base and so on.

C:\2D-CODE\91-09\91114303.ptd 第12頁 1304060 五、發明說明(8) 可m ΐ之ϊ基及單價雜環有機基團之取代基的例子, :舉出烷&、含雜原子諸如齒素、氧、氮、硫、磷、矽之 有機基團等等。 —:於具6-30個碳原子之經取代芳基的例子,可舉出鄰曱 :基、間甲苯基、對曱苯基、對甲氧苯基、2,4,6_三甲苯 f、鄰異丙苯基、2’3~二甲苯基、對氟苯基、對三氟甲苯 基、對溴苯基、對氯笨基、對碘笨基等等。 關於具4-30個碳原子之經取代單價雜環有機基團的例 子’可舉出2 -溴咬喃基、3 -甲氧。塞吩基等等。 關於化學式(I)中之基團R,可舉出烴基諸如甲其、乙 基' 5丁基、環己基、苯基小蔡基、及具有去;好烯、 去曱伯、二壞癸烷結構、或四環十二烷結構之基團、及基 團-S-R11、-SO-R11、及-S02-Ru(其中Ru係烴基諸如曱基、土 乙基、正丁基、環己基、或苯基),以具有去甲丨|稀、去 曱ίέ、或四環十二烷結構之基團為特佳。 關於化學式(I)中之Ζ1及Ζ2之具卜10個碳原子之全說烧基 的例子,可舉出三氟曱基、五氟乙基、七氟正丙基、九農 正丁基等等。 土 關於(I)之較佳結構,可舉出以下之化學式(丨—丨)、 (I - 2)、及(I-3),以(I-1)及(1〜3)為特佳。C:\2D-CODE\91-09\91114303.ptd Page 12 1304060 V. INSTRUCTIONS (8) Examples of substituents of a fluorenyl group and a monovalent heterocyclic organic group: methane & An organic group containing a hetero atom such as dentate, oxygen, nitrogen, sulfur, phosphorus, ruthenium or the like. —: Examples of the substituted aryl group having 6 to 30 carbon atoms include an o-quinone group, a m-tolyl group, a p-fluorenylphenyl group, a p-methoxyphenyl group, and a 2,4,6-trimethylbenzene f. , o-isopropylphenyl, 2'3-dimethylphenyl, p-fluorophenyl, p-trifluoromethylphenyl, p-bromophenyl, p-chlorophenyl, p-iodophenyl and the like. Examples of the substituted monovalent heterocyclic organic group having 4 to 30 carbon atoms are exemplified by 2-bromocarbyl and 3-methoxy. Sequim and so on. With respect to the group R in the formula (I), a hydrocarbon group such as methyl group, ethyl '5 butyl group, cyclohexyl group, phenyl xiaocayl group, and having a dehydrogenate, deuterium, and di-nonanecane may be mentioned. a structure, or a group of a tetracyclododecane structure, and a group -S-R11, -SO-R11, and -S02-Ru (wherein a Ru-based hydrocarbon group such as anthracenyl, tert-ethyl, n-butyl, cyclohexyl Or a phenyl group, particularly preferably a group having a structure of nortenyl, dilute, deuterium or tetracyclododecane. Examples of the all-burning group having 10 carbon atoms of oxime 1 and oxime 2 in the chemical formula (I) include a trifluoromethyl group, a pentafluoroethyl group, a heptafluoro-n-propyl group, a Nine-Nong-butyl group, and the like. Wait. The preferred structure of the soil (I) is exemplified by the following chemical formulas (丨-丨), (I-2), and (I-3), and (I-1) and (1 to 3) are particularly preferred. .

F 1-1 C —S 0〇F 1-1 C —S 0〇

FF

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C:\2D-OODE\91-O9\9in4303.ptd 第14頁 1304060 五、發明說明(ίο) 價基團,R’代表單價取代基,k係0或以上之整數,及η係 0 - 5之整數。 關於Υ1之二價基團之例子,可舉出-0-、-S-、羰基、亞 磺醯基、磺醯基、亞曱基、1,1 -伸乙基、1,2 -伸乙基、伸 丙基、1-曱基伸丙基、1-乙基伸丙基、三亞曱基、二氟亞 曱基、四氟-1,2 -伸乙基、1,2 -伸苯基、1,3 -伸苯基、 1,4 -伸苯基等等。 在此等二價基團之中,羰基、亞曱基、二氟亞曱基、及 四敗-1,2 -伸乙基為較佳。 關於R’之單價或二價取代基之例子,可舉出酮基(=0)、 羥基、羧基、曱醯基、具卜10個碳原子之直鏈或分支鏈烷 基、具1-10個碳原子之直鏈或分支鏈亞乙烯基、具卜12個 碳原子之單價環有機基團、具6-20個碳原子之芳基、具 1 -10個碳原子之直鏈或分支鏈烷氧基、具6-20個碳原子之 芳氧基、具2-10個碳原子之直鏈或分支鏈烷羰基、具7-20 個碳原子之芳羰基、具卜1 0個碳原子之直鏈或分支鏈烷氧 羰基、具7-20個碳原子之芳氧羰基等等。 具卜1 0個碳原子之直鏈或分支鏈烷基之例子為曱基、乙 基、正丙基、異丙基、正丁基、第三丁基、正戊基、正己 基、正庚基、正辛基、正壬基、正癸基等等。 具卜1 0個碳原子之直鏈或分支鏈亞乙烯基之例子為亞曱 基、1,1-亞乙烯基、亞丙烯基、1_曱基亞丙烯基、1-乙基 亞丙烯基等等。 具1 -1 2個碳原子之單價環有機基團之例子為環戊基、環C:\2D-OODE\91-O9\9in4303.ptd Page 14 1304060 V. Inventive Note (ίο) Valence group, R' represents a monovalent substituent, k is an integer of 0 or more, and η is 0-5 The integer. Examples of the divalent group of oxime 1 include -0-, -S-, carbonyl, sulfinyl, sulfonyl, fluorenylene, 1,1 -ethyl, 1,2 - Base, propyl, 1-mercaptopropyl, 1-ethylpropyl, tri-indenyl, difluoroindenyl, tetrafluoro-1,2-extended ethyl, 1,2-phenyl, 1 , 3-phenylene, 1,4-phenylene, and the like. Among these divalent groups, a carbonyl group, an anthranylene group, a difluoroindenylene group, and a tetra-l-,2-diethyl group are preferred. Examples of the monovalent or divalent substituent of R' include a keto group (=0), a hydroxyl group, a carboxyl group, a fluorenyl group, a linear or branched alkyl group having 10 carbon atoms, and 1-10. a straight or branched chain vinylidene group of carbon atoms, a monovalent cyclic organic group having 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, a linear or branched chain having 1 to 10 carbon atoms Alkoxy group, aryloxy group having 6 to 20 carbon atoms, linear or branched alkanecarbonyl group having 2 to 10 carbon atoms, aromatic carbonyl group having 7 to 20 carbon atoms, having 10 carbon atoms A linear or branched alkoxycarbonyl group, an aryloxycarbonyl group having 7 to 20 carbon atoms, and the like. Examples of straight or branched alkyl groups having 10 carbon atoms are anthracenyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, n-pentyl, n-hexyl, n-glycol. Base, n-octyl, n-decyl, n-butyl and the like. Examples of straight or branched chain vinylidene groups having 10 carbon atoms are an anthracenylene group, a vinylidene group, a propenylene group, a 1-decenylene group, and a 1-ethylpropylene group. and many more. An example of a monovalent cyclic organic group having 1 to 1 carbon atoms is a cyclopentyl group and a ring.

C:\2D-OODE\91-O9\91114303.ptd 第15頁 1304060 五、發明說明(11) 己基、金剛烷基、正基、樟腦二醯基等等。 具6 - 2 0個碳原子之芳基之例子為苯基、鄰曱苯基、間曱 苯基、對曱苯基、對羥苯基、1 -萘基、1 -蔥基、苄基等 等。 具1 -1 0個碳原子之直鏈或分支鏈烷氧基之例子為曱氧 基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第三丁氧 基等等。 具6 - 2 0個碳原子之芳氧基之例子為苯氧基、對羥苯氧 基、鄰甲苯氧基、間甲苯氧基、對甲苯氧基等等。 具2-10個碳原子之直鏈或分支鏈烷羰基之例子為曱羰 基、乙羰基、正丙羰基、異丙羰基、正丁羰基、第三丁羰 基等等。 具7-20個碳原子之芳羰基之例子為苯羰基、笮羰基等 等。 具2 -1 0個碳原子之直鏈或分支鏈烷氧羰基之例子為甲氧 羰基、乙氧羰基、正丙氧羰基、異丙氧羰基、正丁氧羰 基、第三丁氧羰基等等。 具7-20個碳原子之芳氧羰基之例子為苯氧羰基、苄氧羰 基等等。此等取代基可具有任何取代基,例如,一或多個 前述的取代基。 在化學式(Ι-A)及(I-B)中,R’可與形成去曱病烯環或去 曱掐環之任何碳原子鍵結。如存在二個或以上的R ’基團, 則其可相同或不同。 在化學式(Ι-A)及(I-B)中,Y1為單鍵、亞甲基、或羰基C:\2D-OODE\91-O9\91114303.ptd Page 15 1304060 V. INSTRUCTIONS (11) Hexyl, adamantyl, n-radical, camphordiyl and the like. Examples of the aryl group having 6 to 20 carbon atoms are phenyl, o-phenylphenyl, m-phenylene, p-nonylphenyl, p-hydroxyphenyl, 1-naphthyl, 1-onionyl, benzyl, etc. Wait. Examples of straight or branched alkoxy groups having 1 to 10 carbon atoms are an anthraceneoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, a third butoxy group, and the like. . Examples of the aryloxy group having 6 to 20 carbon atoms are a phenoxy group, a p-hydroxyphenoxy group, an o-tolyloxy group, an m-tolyloxy group, a p-tolyloxy group and the like. Examples of the linear or branched alkanecarbonyl group having 2 to 10 carbon atoms are a fluorenylcarbonyl group, an ethylcarbonyl group, a n-propylcarbonyl group, an isopropylcarbonyl group, a n-butylcarbonyl group, a tert-butylcarbonyl group and the like. Examples of the arylcarbonyl group having 7 to 20 carbon atoms are a phenylcarbonyl group, a fluorenylcarbonyl group and the like. Examples of straight-chain or branched-chain alkoxycarbonyl groups having 2 to 10 carbon atoms are methoxycarbonyl, ethoxycarbonyl, n-propoxycarbonyl, isopropoxycarbonyl, n-butoxycarbonyl, tert-butoxycarbonyl, and the like. . Examples of the aryloxycarbonyl group having 7 to 20 carbon atoms are a phenoxycarbonyl group, a benzyloxycarbonyl group and the like. These substituents may have any substituent, for example, one or more of the foregoing substituents. In the chemical formulas (Ι-A) and (I-B), R' may be bonded to any carbon atom forming a deinsenic ring or a deuterium ring. If two or more R' groups are present, they may be the same or different. In the chemical formulas (Ι-A) and (I-B), Y1 is a single bond, a methylene group, or a carbonyl group.

C:\2D-CODE\91-09\91114303.ptd 第16頁 1304060 五、發明說明(12) 較佳,k為0較佳,及η為0或1較佳。 關於(I - A )及(I - Β)之較佳結構的例子,可舉出以下之化 學式(A-1)至(A-12)至(B-12)。C:\2D-CODE\91-09\91114303.ptd Page 16 1304060 V. Description of the Invention (12) Preferably, k is preferably 0, and η is 0 or 1 is preferred. Examples of preferred structures of (I - A ) and (I - Β) include the following chemical formulas (A-1) to (A-12) to (B-12).

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C: \2D-C0DE\9]-09\91114303.ptd 第21頁 1304060 五、發明說明(17) 關於酸產生劑(I )之離子性化合物,可舉出以下化學式 (I)之錄磺酸鹽化合物(以下稱為「絲]磺酸鹽化合物(1)」 )。磺酸鹽化合物(1)係其中結構(I)之磺醯基與氧陰離 子結合形成磺酸陰離子之化合物。 Z]C: \2D-C0DE\9]-09\91114303.ptd Page 21 1304060 V. Description of Invention (17) Regarding the ionic compound of the acid generator (I), the following chemical formula (I) A salt compound (hereinafter referred to as "silk] sulfonate compound (1)"). The sulfonate compound (1) is a compound in which a sulfonyl group of the structure (I) is bonded to an oxygen anion to form a sulfonic acid anion. Z]

I R —C —S 〇3~ M+ (1 )I R —C —S 〇3~ M+ (1 )

I z2 在化學式(1)中,R'Z1、及Z2之定義與化學式(I)相同, 及M+為單價编陽離子。 關於M+之單價鐵陽離子的例子,可舉出0、S、Se、N、 P、As、Sb、C1、Br、1等等。在此等<絲陽離子之中,S及I 為較佳。 在化學式(1 )中,關於以M+表示之單價穩陽離子的例 子,可舉出以下之化學式(i )及(i i ): R1I z2 In the chemical formula (1), R'Z1 and Z2 have the same definitions as the chemical formula (I), and M+ is a monovalent cation. Examples of the monovalent iron cation of M+ include 0, S, Se, N, P, As, Sb, C1, Br, 1, and the like. Among these <silver cations, S and I are preferred. In the chemical formula (1), examples of the monovalent stable cation represented by M+ include the following chemical formulas (i) and (i i ): R1

I R2 —S+ —R3 ( i ) 其中R1、R2、及R3分別代表具卜20個碳原子之經取代或未 經取代、直鏈或分支鏈烷基,具6 - 2 0個碳原子之經取代或 未經取代芳基,或R1、R2、及R3之兩者或以上與化學式中 之硫原子一起形成環,及 R4 —V —R5 (ii)I R2 —S+ —R3 ( i ) wherein R 1 , R 2 , and R 3 represent a substituted or unsubstituted, straight or branched alkyl group having 20 carbon atoms, respectively, having 6 to 20 carbon atoms. a substituted or unsubstituted aryl group, or two or more of R1, R2, and R3 together with a sulfur atom in the formula form a ring, and R4 - V - R5 (ii)

C:\2D-CODE\91-09\91114303.ptd 第22頁 1304060 五、發明說明(18) 、其中R4及R5分別代表具1 — 2 〇個碳原子之經取代或未經取 代、直鏈或分支鏈烷基,或具6 —20個碳原子之經取代或未 、里取代,基、’或P及妒與化學式中之填原子一起形成環。 Μ+之單價销陽離子基團可利用已知之方&,例如,; p'「J. V — 110’聚合物科學之進展( — es ;ηC:\2D-CODE\91-09\91114303.ptd Page 22 1304060 V. Inventive Note (18), wherein R4 and R5 represent substituted or unsubstituted, linear chains having 1 - 2 carbon atoms, respectively Or a branched alkyl group, or a substituted or unsubstituted, substituted 6-20 carbon atom, a group, or a P and a hydrazine form a ring together with a filled atom in the formula. The monovalent pin cationic group of Μ+ can utilize the known formula &, for example, p' "J. V - 110' progress in polymer science (-es; η

Lyme〜 。enc° 62,49,1 984」中之方法製得。 於較佳早價韵各陽離子之例子,可舉出由 η卜⑷所*之貌陽離子及^以下化學式⑴= (11-39)所示之錤陽離子。 」Lyme~. The method of enc° 62, 49, 1 984 is produced. Examples of the preferred cations of the cations include the cations of η (4)* and the phosphonium cations represented by the following chemical formula (1) = (11-39). "

CH3 (i - 2) (i -1)CH3 (i - 2) (i -1)

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C:\2D-CODE\91-09\9m4303.ptd 第31頁 1304060 五、發明說明(27) H3c-s1-<^ 》(i-37) Λ H3C- )〉(i-38) H3C - s— )/—OH (i-39) ch3 h3c-s1ch3 (i-40) ch2ci H3。- > (i-41) ch3 ,_, H3C— stcH2C〇-^〇〉 (i -42)C:\2D-CODE\91-09\9m4303.ptd Page 31 1304060 V. Description of invention (27) H3c-s1-<^ 》(i-37) Λ H3C- )〉(i-38) H3C - S— )/—OH (i-39) ch3 h3c-s1ch3 (i-40) ch2ci H3. - > (i-41) ch3 , _, H3C — stcH2C〇-^〇> (i -42)

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C:\2D-CODE\91-09\91114303.ptd 第34頁 1304060 五、發明說明(30)C:\2D-CODE\91-09\91114303.ptd Page 34 1304060 V. Description of Invention (30)

(i-54) (i-55) (i-56) (i-57)(i-54) (i-55) (i-56) (i-57)

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•〇CH2C〇OC(CH3)3 (ii - 28)•〇CH2C〇OC(CH3)3 (ii - 28)

〇 '•Ky>-〇-c 〇一C—〇—C(CH3)3 (ii-29)〇 '•Ky>-〇-c 〇一C—〇—C(CH3)3 (ii-29)

CH3OOCCH3OOC

0C(CH3)3 (ii - 30) COOCH3 (ii-31) COOCH3 (ii-32)0C(CH3)3 (ii - 30) COOCH3 (ii-31) COOCH3 (ii-32)

CH300C (CH3)3COOCCH2〇 〇CH2COOC(CH3)3 (ii-33)CH300C (CH3)3COOCCH2〇 〇CH2COOC(CH3)3 (ii-33)

〇 〇 (CH3)3C-〇-C-〇 o各 o-c(ch3)3 (CH3)3CO 〇C(CH3)3 (ii-34) (ii-35) 11_画_1 C: \2D-mDE\91 -09\91114303 .ptd 第41頁 1304060 五、發明說明(37)〇〇(CH3)3C-〇-C-〇o each oc(ch3)3 (CH3)3CO 〇C(CH3)3 (ii-34) (ii-35) 11_画_1 C: \2D-mDE \91 -09\91114303 .ptd Page 41 1304060 V. Description of invention (37)

(ii-36) (ii-37)(ii-36) (ii-37)

(ii-38)(ii-38)

(ii - 39)(ii - 39)

C:\2D-CODE\91-09\91114303.ptd 第42頁 1304060 五、發明說明(38) 在此等單價II陽離子中,由化學式(i-1)、(i-2)、 (卜6)、(i-8)、(i-13)、(i-19)、(i-25)、(i-27)、 (i-29)、(i-51)、及(i-54)所示之讀)陽離子,及由化學式 (ii-1)及(ii-11)所示之鎖陽離子為較佳。 關於較佳的錄磺酸鹽化合物(1),可舉出以下化學式 (卜A)或(卜B)之化合物。C:\2D-CODE\91-09\91114303.ptd Page 42 1304060 V. Description of Invention (38) Among these monovalent II cations, from the chemical formula (i-1), (i-2), (Bu 6 ), (i-8), (i-13), (i-19), (i-25), (i-27), (i-29), (i-51), and (i-54) The read cations shown, and the lock cations represented by the chemical formulas (ii-1) and (ii-11) are preferred. As the preferred sulfonate compound (1), a compound of the following chemical formula (A) or (B) can be mentioned.

(1-A)(1-A)

M+ (1HB) 其中Z1及Z2係如化學式(I)所定義,Yl、R’ 、k、及η係如 化學式(I - A)及(I - Β)所定義,及Μ+係如化學式(1)所定 義。 關於酸產生劑(I)之非離子性化合物,可舉出以下化學 式(2 )之N -磺醯基氧醯亞胺化合物(以下稱為「N -磺醯基氧 醯亞胺化合物(2)」)。 t Z1 Y彳 R—C—S02-0M+ (1HB) wherein Z1 and Z2 are as defined in formula (I), Yl, R', k, and η are as defined in formulas (I - A) and (I - Β), and Μ + are as in formula ( 1) Defined. The nonionic compound of the acid generator (I) may, for example, be an N-sulfonyloxyquinone imine compound of the following chemical formula (2) (hereinafter referred to as "N-sulfonyloxyphthalimide compound (2)) "). t Z1 Y彳 R—C—S02-0

(2)

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其中R、Z]、及Z2係如化學式 氫原子或經取代或未經取代之所疋義’ R6及1^7分別代表 與基團R6或R7所結合之碳原子貝有機基團,或R6及R7可 雙鍵 '或二價有機基團 #形成環,及Y2為單鍵、 關於Ν-磺醯基氧醯亞胺化合物⑴之較 以下化學式(2-Α)或(2-Β)之化合物。 了舉出Wherein R, Z], and Z2 are, for example, a chemical hydrogen atom or a substituted or unsubstituted singular 'R6 and 1^7, respectively, representing a carbon atom bonded to a group R6 or R7, or R6, respectively. And R7 may form a ring with a double bond 'or a divalent organic group #, and Y2 is a single bond, and the compound of the above formula (2-Α) or (2-Β) with respect to the oxime-sulfonyloxy quinone imine compound (1) Compound. Give

:R'\ Ζ1 -Y1-c—:R'\ Ζ1 -Y1-c—

S〇2一〇—NS〇2〇—N

(2-A)(2-A)

R6 R7 (2 - B) R,、k、及n係如 及Y2係如化學式 其中Ζ1及Ζ2係如化學式(I )所定義,γ 1 化學式(Ι-Α)及(Ι-Β)所定義,及R6、R7 (2)所定義。 關於與化學式(2)、(2-A)、或(2_B)之磺醯氧基(s〇_〇_ )鍵結之較佳的醯亞胺基,可舉出以下化學式(2d)至2R6 R7 (2 - B) R, k, and n are as in the chemical formula, and Ζ 1 and Ζ 2 are as defined by the chemical formula (I), and the γ 1 chemical formula (Ι-Α) and (Ι-Β) are defined. , and R6, R7 (2) are defined. The preferred quinone imine group bonded to the sulfomethoxy group (s〇_〇_) of the chemical formula (2), (2-A) or (2_B) may be exemplified by the following chemical formula (2d) to 2

13040601304060

五、發明說明(40) (2-9)之基團。5. The description of the invention (40) (2-9).

ΟΟ

(2-5)(2-5)

(2—6)(2-6)

在此等醯亞胺基中,化學式(2 - 1)、(2_4)、(2 一 8)、或 (2 - 9)之基團為較佳。 現將詳細說明製造麴磺酸鹽化合物(1 )之方法。 1¾確酸鹽化合物(1)可使用已知之方法諸如]).D d e sAmong these quinone imine groups, a group of the formula (2-1), (2_4), (2-8), or (2-9) is preferred. A method of producing the oxime sulfonate compound (1) will now be described in detail. The 13⁄4 acid salt compound (1) can use a known method such as]).D d e s

Marteau(無機化學(inorganic chemistry),第 32 卷, 50 0 7,1 993 )之方法或厂火(:1^”11〇(聚合物科’ 62, 49, 1984)之方法製造。 展 明確言 (1)係經由使前驅物(1 a)與二硫亞^ S I鹽化合物 下反應產生亞績酸鹽(lb),使用亞二酸=在無機檢之存在 氣化5者如過氣化翁望令 使亞%酸鹽(1 b)氧化產生磺酸鹽(丨 二、、 ,然後再使用相反義Marteau (inorganic chemistry, Vol. 32, 50 0 7, 1 993) or factory fire (: 1^"11〇 (Polymers' 62, 49, 1984). (1) by reacting a precursor (1 a) with a dithiazide SI salt compound to produce a ylide acid salt (lb), using a succinic acid = gasification in the presence of an inorganic test, such as a gasification Expecting to oxidize the sub-acid salt (1 b) to produce a sulfonate (丨, , , and then use the opposite meaning

1304060 五、發明說明(41) 子交換前驅物Μ+Γ進行離子交換反應而製得 反應式(1 ) ζ1 Z1 R- έ— [la] ΝΒ2^2〇4 R~^S〇2Na 21 L· R—9—S03Na Z Z2 [lb] 「 Ί [lc] , 21 R-έ-S〇3 M+ ⑴ Ζ2 其中X係可釋放的單價基團’及t係單價陰離子。 關於前驅物(1 a)之X之可釋放單價基團之例子,除了齒 原子諸如氯、溴、及碘之外,可舉出甲磺酸酯基、$ / 磺酸酯基等等,以溴及碘原子為較佳。 在前驅物(la)與二硫亞確酸納之反應中,二 對前驅物(la)之莫耳比通常為0.01_1〇〇,及以10^0納 佳。 關於反應中所使用之無機鹼的例子, 酸鈉、碳酸鉀、碳酸氫鋰、碳酸氫鈉、碳箄、奴 碳酸氫鈉及碳酸氫鉀為較佳。 氕鉀寺寺,以 及以 無機鹼對二硫亞磺酸鈉之 通 2· 0-4· 0 較佳。 ϋ 10· 0 ^反應係於有機溶劑及水之混合溶劑中 有機溶劑,可舉出盥水1 進订車乂佳。關於 千㈤興水具有高互溶性之溶 八 四虱呋喃、N,N〜二甲基甲萨 w N1 低\醇、 甲暴甲胺、N,N-二甲基乙醯胺、己1304060 V. INSTRUCTIONS (41) The sub-exchange precursor Μ+Γ is subjected to an ion exchange reaction to obtain a reaction formula (1) ζ1 Z1 R- έ—[la] ΝΒ2^2〇4 R~^S〇2Na 21 L· R-9-S03Na Z Z2 [lb] "Ί [lc] , 21 R-έ-S〇3 M+ (1) Ζ2 where X is a releasable monovalent group' and a t-unitary anion. About the precursor (1 a) Examples of the liberable monovalent group of X include, in addition to a tooth atom such as chlorine, bromine, and iodine, a mesylate group, a sulfonate group, and the like, and a bromine and iodine atom are preferred. In the reaction of the precursor (la) with dithiocarbamate, the molar ratio of the two pairs of precursors (la) is usually 0.01_1 〇〇, and preferably 10 0 0. About the use in the reaction. Examples of inorganic bases, sodium, potassium carbonate, lithium hydrogencarbonate, sodium hydrogencarbonate, carbonium, sodium hydrogencarbonate and potassium hydrogencarbonate are preferred. 氕Katsiji Temple, and an inorganic base to sodium dithiosulfinate It is preferably 2· 0-4· 0. ϋ 10· 0 ^ The reaction is an organic solvent in a mixed solvent of an organic solvent and water, and it can be mentioned that the water is high in the order of the water. Mutual solubility Eighty-four lice furan, N, N~ dimethylformamide Sa w N1 low \ alcohol, A storm methylamine, N, N- dimethylacetamide, hexyl

C: \2D-GODE\91-09\91114303.ptd 第46頁 1304060 五、發明說明(42) 腈、二曱亞砜等等為較佳例子,以N,N -二甲基乙酿胺、乙 腈、及二曱亞硬為更佳,及乙腈為特佳。 對1 0 0份重量之有機溶劑及水之總量,有機溶劑之使用 量通常為5-100份重量,以ίο-loo份重量較佳,及2〇-9〇份 重量特佳。 反應係在通常為40-200 °C,及6 0 - 1 20 °C較佳之溫度下進 行通常0 · 5 - 7 2小時,及以2 - 2 4小時較佳。如所使用之反靡 溫度較有機溶劑或水之沸點高,則使用壓力容器諸如熱壓 爸。 關於在亞磺酸鹽(1 b )之氧化反應中所使用之氧化劑,除 了過氧化氫之外,可舉出偏氣過苯曱酸、第三丁基過氧化 氫、過氧硫酸鉀、過錳酸鉀、過硼酸鈉、偏碘酸鈉、鉻 酸、重鉻酸鈉、ii素、二氯破苯、二乙酸硬苯、氧化锇 (V I I )、氧化釕(V11 )、次氣酸鈉、亞氯酸鈉、氧氣、臭氧 氣體等等,以過氧化氫、偏氯過苯曱酸、及第三丁基過氧 化氫為較佳。 氧化劑對亞磺酸鹽(lb)之莫耳比通常為1· 0 — 10· 〇,及以 1 · 5 - 4 · 0 較佳。 此外,可將過渡金屬催化劑與前述之氧化劑一起使用。 關於過渡金屬催化劑之例子,可舉出鎢酸二鈉、氯化鐵 (Π I)、氣化釕(I II)、及氧化硒(1 V),以鎢酸二鈉為較 佳。 ” 過渡金屬催化劑對亞磺酸鹽(1 b )之莫耳比通常為〇 . 〇 〇 J 一 2 · 0,以 0 · (Π -1 · 〇 較佳,及 〇 · 〇 3 - 〇 · 5 特佳。C: \2D-GODE\91-09\91114303.ptd Page 46 1304060 V. Description of the invention (42) Nitrile, disulfoxide, etc. are preferred examples, with N,N-dimethyletheneamine, Acetonitrile and diterpene are harder, and acetonitrile is particularly preferred. The organic solvent is usually used in an amount of from 5 to 100 parts by weight based on 100 parts by weight of the total amount of the organic solvent and water, preferably from ίο-loo by weight, and particularly preferably from 2 to 9 parts by weight. The reaction is carried out usually at a temperature of usually from 40 to 200 ° C and at a temperature of from 60 to 1 20 ° C for usually from 0.5 to 7.2 hours, and preferably from 2 to 24 hours. If the ruthenium temperature used is higher than the boiling point of the organic solvent or water, a pressure vessel such as a hot press dad is used. As the oxidizing agent used in the oxidation reaction of the sulfinate (1b), in addition to hydrogen peroxide, hemi-perbenzoic acid, t-butyl hydroperoxide, potassium peroxysulfate, and the like may be mentioned. Potassium manganate, sodium perborate, sodium metamorphic acid, chromic acid, sodium dichromate, ii, dichlorobenzene, diphenyl acetic acid, cerium oxide (VII), cerium oxide (V11), sodium hypocarbonate Sodium chlorite, oxygen, ozone gas, etc., preferably hydrogen peroxide, chloroperbenzoic acid, and tert-butyl hydroperoxide. The molar ratio of the oxidizing agent to the sulfinate (lb) is usually from 1.0 to 10 Torr, and preferably from 1 to 5 - 4 · 0. Further, a transition metal catalyst can be used together with the aforementioned oxidizing agent. Examples of the transition metal catalyst include disodium tungstate, iron chloride (Π I), gasified ruthenium (I II), and selenium oxide (1 V), and disodium tungstate is preferred. The molar ratio of the transition metal catalyst to the sulfinate (1 b ) is usually 〇. 〇〇J - 2 · 0, with 0 · (Π -1 · 〇 preferably, and 〇 · 〇 3 - 〇 · 5 Very good.

第47頁 1304060 五、發明說明(43) 用前述:氧化劑和過渡金屬催化劑之外,可使 用級衝劑於控制反應溶液之ρΗ。 =緩=劑之例子:可舉出磷酸氫二鈉、磷酸二氯納、 、墙酸二虱鉀等等 '緩衝劑對亞項酸鹽(之 j耳比通常為〇.〇卜2.〇,以0.03M.0較佳,及m 隹0 ,反通常係在反應溶劑中進4于。關於反應溶劑,可舉 出水、有機溶劑諸如低碳醇、四氫吱。南、n,n_二甲基甲醯 胺:n,n-二甲基乙醯胺、乙腈、二甲亞碾、乙酸、三氟乙 酸等等為較佳例子,以甲醇、N,N_:甲基乙醯胺、乙骑、 及二曱亞颯為更佳,及曱醇為特佳。 對1 0 0伤重1之亞磺酸鹽(i b ),反應溶劑之使用量通常 為5 100伤重1,以10 — 1〇〇份重量較佳,及份重量特 佳。若須要,可將前述之有機溶劑與水共同使用。在此情 況,有機溶劑之使用量通常為5 —1〇〇份重量,以1〇_1〇〇份 重量較佳,及2 0-90份重量特佳。 反應係在通常為0-10(rc,以5 —6(rc較佳,及5—4(rc特 佳之溫度下進行通常〇·5 —72小時,及以2 — 24小時較佳。 w可使用已知之方法於磺酸鹽(lc)之離子交換反應’例如 說明於「j· ν· Crivel 1〇,聚合物科學之進展62,49, 1 9 8 4」中之方法。 在七述之離子交換反應過程中可使用諸如離子交換層析 術之方法。 關於反應式(1)中之χ-之單價陰離子的例子,可舉出F_Page 47 1304060 V. INSTRUCTIONS (43) In addition to the foregoing: oxidant and transition metal catalyst, a graded granule can be used to control the pH of the reaction solution. = Examples of retarding agents: exemplified by disodium hydrogen phosphate, dichlorophosphate, potassium dipotassium silicate, etc. 'buffering agent to sub-item salt (the j-ear ratio is usually 〇.〇卜2.〇 Preferably, it is 0.03 M.0, and m 隹0, and the reaction is usually carried out in a reaction solvent. Examples of the reaction solvent include water, an organic solvent such as lower alcohol, tetrahydroanthracene, and n, n. _ dimethylformamide: n, n-dimethylacetamide, acetonitrile, dimethyl sulphate, acetic acid, trifluoroacetic acid, etc., as a preferred example, with methanol, N, N_: methyl acetamide It is better to use it, and it is better to use it. It is especially good for decyl alcohol. For the sulfinate (ib) with a weight of 1 and the reaction solvent, the amount of the reaction solvent is usually 5 100, and the weight is 1 10 - 1 part by weight is preferred, and the part by weight is particularly good. If necessary, the above organic solvent can be used together with water. In this case, the organic solvent is usually used in an amount of 5 - 1 part by weight, 1〇_1 parts by weight is preferred, and 20-90 parts by weight is particularly good. The reaction system is usually 0-10 (rc, with 5-6 (rc is preferred, and 5-4 (rc excellent temperature) Under the usual 〇·5—72 hours, and 2 Preferably, 24 hours is used. The ion exchange reaction of the sulfonate (lc) can be carried out by a known method, for example, as described in "j. ν·Crivel 1〇, Progress in Polymer Science 62, 49, 1 9 8 4". A method such as ion exchange chromatography can be used in the ion exchange reaction described in the above. For the example of the monovalent anion in the reaction formula (1), F_

C:\2D-CODE\91-09\91114303.ptd 第48頁 1304060 五、發明說明(44) C1 、Β Γ P、過氣酸根、硫酸氫根、構酸二氫根、四 f化獨酸根、脂族磺酸根、芳族磺酸根、三氟甲磺酸根、 氣確酸根、六氟化磷酸根、六氯化銻酸根等等,以、 、硫酸氫根、四氟化硼酸根、及脂族磺酸根為較佳, 及C 1 、β r 、及硫酸氫根為特佳。相反離子交換前驅物對 石頁酸鹽(lc)之莫耳比通常為〇1 —1〇 〇,以〇3 — 4〇較佳, 及〇 · 7 - 2 · 0特佳。 此反應通常係在反應溶劑中進行。關於反應溶劑,可舉 ^水、有機溶劑諸如低碳醇、四氫呋喃、N,N一二曱基曱醯 胺、N,N-二甲基乙醯胺、乙腈、二甲亞砜等等為較佳例 、以水曱醇、N,N -二曱基乙醯胺、乙賸、及二曱亞石風 為更佳,及水為特佳。 3對1 0 0伤重i之相反離子交換前驅物,反應溶劑之使用 量=常為5-100份重量,以1〇_1〇〇份重量較佳,及2〇_5〇份 重量特佳。若須要’可將水與有機溶劑共同使用。在 :旦,0份重量之有機溶劑及水之總量,有機溶劑之使月 用里通$為5 -1〇〇份重量,以一 1〇〇份重旦 份重量特佳。 1U”刀重里較佳,及2。, 反應通常係在0-80 t,以5-30 〇C較佳之、、θ 1〇分鐘至6小時,及以3。分鐘至2小時較佳:度下進行通常 以此方式製得之磺酸鹽化合物(丨) 溶劑萃取而純化。 i由使用有機 關於用於純化之有機溶劑,不與水混合 佳。其例子包括酯諸如乙酸乙酯及乙七浴剑為較 文止丁酯,醚諸如乙C:\2D-CODE\91-09\91114303.ptd Page 48 1304060 V. INSTRUCTIONS (44) C1, Β Γ P, gas radicals, hydrogen sulfate, acid dihydrogen, tetrafolate , aliphatic sulfonate, aromatic sulfonate, triflate, gas acid, hexafluoride phosphate, hexachloroantimonate, etc., with, hydrogen sulfate, tetrafluoroborate, and lipid The sulfonate group is preferred, and C 1 , β r , and hydrogen sulfate are particularly preferred. The molar ratio of the opposite ion exchange precursor to the sulphate (lc) is usually 〇1 -1〇, preferably 〇3 - 4 ,, and 〇 · 7 - 2 · 0 is particularly preferred. This reaction is usually carried out in a reaction solvent. As the reaction solvent, water, an organic solvent such as lower alcohol, tetrahydrofuran, N,N-didecylguanamine, N,N-dimethylacetamide, acetonitrile, dimethyl sulfoxide, etc. may be mentioned. In good cases, it is better to use water sterol, N,N-dimercaptoacetamide, residual, and bismuth stone, and water is particularly good. 3 pairs of 100% of the weight of the opposite ion exchange precursor, the amount of the reaction solvent = often 5 to 100 parts by weight, preferably 1 〇 1 〇〇 part by weight, and 2 〇 _ 5 parts by weight good. If necessary, water can be used together with organic solvents. In the case of a denier, the total amount of the organic solvent and water is 0 parts by weight, and the organic solvent is used in an amount of 5 - 1 part by weight, preferably 1 part by weight. The 1U" knife weight is better, and 2. The reaction is usually in the range of 0-80 t, preferably 5-30 〇C, θ 1 〇 minutes to 6 hours, and 3 minutes to 2 hours. It is purified by solvent extraction using a sulfonate compound (丨) which is usually obtained in this manner. i is preferably mixed with water by using an organic solvent for purification, and examples thereof include esters such as ethyl acetate and ethyl acetate. Bath sword is a butyl ester, ether such as B

第49頁 1304060 五、發明說明(45) ----------- 鍵’及鹵化烧基諸如二氣曱烷及氣仿。 由化學式(1 - A)所不之飾4磺酸鹽化合物(丨)係經由 稀衍生物⑽(其係爾稀衍生物(2a)及環戊二稀化合甲伸 物根據以下反應式(2)之狄耳士_阿德爾(Diels_M 應製得)、或去甲®烯衍生物(3b)(其係經由環戊二二 物與於反應式(3)中製得之去甲指烯衍生物(2b)的狄耳士口一 阿德爾反應製得)根據反應式(丨)反應而製得。具有三個以 上之去曱籀烯或去曱指環之端績酸鹽化合物(1 )可經由重 複進行反應式(3 )所示之步驟合成多環去曱摘烯衍生物, 然後依照前述步驟而製得。 反應式(2) Ο Z1 CHg—CH γΐ—C~X Ζ2 [2a] 狄耳士 -阿德爾反應 Z1Page 49 1304060 V. INSTRUCTIONS (45) ----------- Keys and halogenated alkyl groups such as dioxane and gas imitation. The sulfonate compound (丨) is a compound of the formula (1 - A) via a dilute derivative (10) (the selastyl derivative (2a) and the cyclopentadiene compound) according to the following reaction formula (2) Dijon _ Adel (diels_M should be prepared), or normethene derivative (3b) (which is derived from cyclopentadienyl and demethylated olefins prepared in reaction formula (3) The Diershikou-Adel reaction of the substance (2b) is obtained according to the reaction formula (。). The terminal acid salt compound (1) having three or more dedecene or deuterium ring can be obtained. The polycyclodecanthene derivative is synthesized by repeating the steps shown in the reaction formula (3), and then obtained according to the aforementioned steps. Reaction formula (2) Ο Z1 CHg-CH γΐ-C~X Ζ2 [2a] Di Earshiel-Adel reaction Z1

Y1—C—X i2Y1—C—X i2

[2b] 在反應式(2 )中,Z1及Ζ2係與化學式(I )中之定義相同, Y1係與化學式(I - A )及(I _ B )中之定義相同,及X係與反應 式(1)中之定義相同。 反應式(3 )[2b] In the reaction formula (2), the Z1 and Ζ2 systems are the same as defined in the chemical formula (I), and the Y1 system is the same as defined in the chemical formulas (I - A) and (I _ B), and the X system and the reaction The definitions in the formula (1) are the same. Reaction formula (3)

C: \2D-C0DE\9 卜 〇9\911H303 .ptd 第50頁 1304060 五、發明說明(46)C: \2D-C0DE\9 Bu 〇9\911H303 .ptd Page 50 1304060 V. Description of invention (46)

〇 [2b]〇 [2b]

狄耳士-阿德爾反應 在反應式(3 )中,Z1及Z2係與化學式(I)中之定義相同, Y1係與化學式(I_A)及(I-B)中之定義相同,及X係與反應 式(1)中之定義相同。 現將更詳細說明反應式(2 )及(3 )。關於反應式(2 )及(3 ) 中之狄耳士 -阿德爾反應,可使用已知之方法,諸如說明 於「有機合成總論(Comprehensive Organic Synthesis) ,Β· Μ· Trost & I. Fleming,Pergamon Press,紐約, 1991 ,第V冊,315頁」中之方法。 當進行狄耳士-阿德爾反應時,乙烯衍生物(2a)對環戊 二烯化合物之莫耳比及環戊二烯化合物對去曱箱稀衍1 (2b)之莫耳比通常係〇· (π-loo,及以〇·卜1〇較佳。 此反應可在不存在溶劑之下,或於反應溶劑諸如曱笨 二曱苯、N,N-二甲基甲醯胺、四氫呋喃、1,2一二氯乙〜 等中進行。 -烷等Dimes-Adel reaction In the reaction formula (3), the Z1 and Z2 systems are the same as defined in the chemical formula (I), the Y1 system is the same as defined in the chemical formulas (I_A) and (IB), and the X system and the reaction are The definitions in the formula (1) are the same. The reaction formulas (2) and (3) will now be described in more detail. With regard to the Dier-Adel reaction in the reaction formulas (2) and (3), a known method can be used, such as the description in "Comprehensive Organic Synthesis", Β·Μ·Trost & I. Fleming , Pergamon Press, New York, 1991, Vol. V, p. 315. When the Dimes-Alder reaction is carried out, the molar ratio of the ethylene derivative (2a) to the cyclopentadiene compound and the molar ratio of the cyclopentadiene compound to the decanted dilute 1 (2b) are usually 〇 · (π-loo, and 〇·卜1〇. This reaction can be carried out in the absence of a solvent, or in a reaction solvent such as hydrazine, N,N-dimethylformamide, tetrahydrofuran, 1,2 - dichloroethane ~ etc. - alkane, etc.

Η C:\2D-00DE\91-09\91114303.ptd 第51頁 1304060 五、發明說明(47) -- 反應係在通常為2 0 - 2 5 0 °C,以8 〇 - 1 8 0 °C較佳之溫度下、 行通常0 · 5 - 2 4小時’及以4 - 1 2小時較佳。如所使用之反2 溫度較反應原料或反應溶劑之沸點高,則使用壓力容器$ 如熱壓釜。 °°吟 化學式(1 -B )所示之鍮磺酸鹽化合物(1 )可經由使去甲卞 烯衍生物(例如以反應式(2)或(3)所示之方式製得之去 烯衍生物(2b)或(3b))與氫氣於反應溶劑中在氫化催化劑Μ 之存在下接觸而製得。 η 關於氫化催化劑之例子,可舉出過渡金屬催化劑諸如雷 氏鎳(Raney nickel)、鈀-碳、氧化鉑(ιν)、鍺—碳、铑^ 氧化鋁、釕-碳、參-(三苯膦)氯铑(丨;)等等。 過渡金屬催化劑對各去曱搖烯衍生物之重量比通常係〇 0 0 1 - 1 ’ 及以 Q · 〇 1 — 〇 . 2 較佳。 氫化反應期間之氫氣壓力通常係卜1 2 0大氣壓,以1 —丨〇 〇 大氣壓較佳,及1-50大氣壓特佳。 此反應通常係在反應溶劑中進行。關於反應溶劑之例 子’可舉出有機溶劑諸如甲醇、乙醇、乙酸乙酯、甲苯、 二曱苯、四氫呋喃、1,2-二氯乙烷等等。 反應溶劑對各去甲掐烯衍生物之重量比通常係丨—丨〇 〇, 以5 - 1 〇 〇較佳,及1 〇 — 8 〇特佳。 反應係在通常為20-20 0 °C,以20-150°C較佳,及20-100 °C特佳之溫度下進行通常〇 · 5 _ 2 4小時,及以4 - 1 2小時較 佳。如所使用之反應溫度較反應原料或反應溶劑之沸點高 或如所使用氫氣之壓力超過1大氣壓,則使用壓力容器諸Η C:\2D-00DE\91-09\91114303.ptd Page 51 1304060 V. INSTRUCTIONS (47) -- The reaction system is usually 2 0 - 2 5 0 °C, 8 〇 - 1 80 ° ° C is preferably at a temperature of usually 0. 5 - 2 4 hours and preferably 4 - 12 hours. If the temperature of the reverse 2 used is higher than the boiling point of the reaction starting material or the reaction solvent, a pressure vessel $ such as an autoclave is used. The oxime sulfonate compound (1) represented by the formula (1-B) can be obtained by subjecting a normethene derivative (for example, a dealkylene obtained by the reaction formula (2) or (3)). The derivative (2b) or (3b)) is obtained by contacting hydrogen with a reaction solvent in the presence of a hydrogenation catalyst hydrazine. η Examples of the hydrogenation catalyst include transition metal catalysts such as Raney nickel, palladium-carbon, platinum oxide (ιν), ruthenium-carbon, ruthenium-alumina, ruthenium-carbon, gins-(triphenylene). Phosphine) Chloroquinone (丨;) and so on. The weight ratio of the transition metal catalyst to each de-throkenne derivative is usually 〇 0 0 1 - 1 ' and Q · 〇 1 - 〇 . 2 is preferred. The hydrogen pressure during the hydrogenation reaction is usually 120 ° C, preferably 1 - 丨〇 〇 at atmospheric pressure, and particularly preferably 1 - 50 atm. This reaction is usually carried out in a reaction solvent. As the example of the reaction solvent, an organic solvent such as methanol, ethanol, ethyl acetate, toluene, diphenylbenzene, tetrahydrofuran, 1,2-dichloroethane or the like can be given. The weight ratio of the reaction solvent to each nordecene derivative is usually 丨-丨〇 〇, preferably 5 - 1 〇 ,, and 1 〇 -8 〇. The reaction is carried out at a temperature of usually 20-20 ° C, preferably 20-150 ° C, and preferably 20-100 ° C, usually at 〇 5 _ 24 hours, and preferably at 4 - 12 hours. . If the reaction temperature used is higher than the boiling point of the reaction raw material or the reaction solvent or if the pressure of the hydrogen used exceeds 1 atm, the pressure vessels are used.

C:\2D-CODE\91-09\91]14303 .ptd 第52頁 1304060 五、發明說明(48^ ~ " ' -- 如熱壓爸。 接下來將詳細說明N —磺醯基氧醯亞胺化合物(2 )之製 法。 π N-續醯基氧醯亞胺化合物(2 )係經由,例如,使用反應 式(1)所示之亞磺酸鹽(丨b)或磺酸鹽(丨c)而製得。 、 明確言之,如以下的反應式(4)所示,使用鹵化劑諸如 氯氣將亞磺酸鹽(1 b )轉變為磺醯鹵化合物(4 A)諸如磺醯氯 (4a) °使磺醯鹵化合物(4A)與^羥醯亞胺化合物於反應溶 劑中在驗催化劑之存在下反應產生N-磺醯基氧醯亞胺化合 物(2 ) 〇 反應式(4 )C:\2D-CODE\91-09\91]14303 .ptd Page 52 1304060 V. Description of the invention (48^ ~ " ' -- such as hot pressure dad. Next, the N-sulfonyl oxonium will be described in detail. The method for producing the imine compound (2). The π N-and the fluorenyl oxyimide compound (2) is, for example, a sulfinate (丨b) or a sulfonate represented by the reaction formula (1).丨c). Specifically, as shown in the following reaction formula (4), a sulfonate (1 b ) is converted into a sulfonium halide compound (4 A) such as sulfonium using a halogenating agent such as chlorine gas. Chlorine (4a) ° The reaction of the sulfonium halide compound (4A) with the oxonium imine compound in the presence of a catalyst in the presence of a catalyst to produce an N-sulfonyloxyquinone compound (2) 〇 Reaction formula (4) )

關於亞磺酸鹽(1 b )與氯化劑之反應,可使用已知之方法 諸如說明於「D· D· DesMarteau,無機化學,第32卷,Regarding the reaction of the sulfinate (1b) with a chlorinating agent, a known method such as those described in "D. D. DesMarteau, Inorganic Chemistry, Vol. 32,

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五、發明說明(49) 5〇 0 7,1 9 9 3」中之方法或稍後說明於合成實施例中之方 法。 於❹,使氣氣發泡進人至反應溶液中之方法使用 叫在反應中通常使用比亞磺酸鹽(lb)之量更加過量的氣化 此反應通常係在反應溶劑中進行。關於反應溶劑, 出水、有機溶劑諸如四氫呋喃、N,N_二甲基甲醯胺、N,/一 一曱基乙醯胺、[腈 '二甲亞硬等等為較佳水 Π二N:二甲基乙酿胺、…及二甲亞…佳及 對:〇〇份重量之亞續酸鹽(lb),反應溶劑之使用量通常 為5-1 〇〇伤重量,以〇〇份重量較佳,及2〇_5〇份重量 佳。若須要,可將前述之有機溶劑與水一起使用。在此情 Ϊ旦重4之水及有機溶劑之總量’有機溶劑之使 用里通吊為5-1〇〇份重量,以1〇_1〇〇份重量較佳,及2〇_9〇 份重量特佳。 反應係在通常為0-10(TC,以5_6(rc較佳,及5_4〇1特 佳之溫度下進行通常5分鐘至12小時,及以1〇分鐘至5小時 較佳。 在磺醯氯(4a)與N-羥醯亞胺化合物之反應中,N_羥醯亞 胺化合物對磺醯氣(4a)之莫耳比通常係〇.卜1〇〇 ,以 〇· 3-5. 0 較佳,及〇· 5_2· 〇 特佳。 · 此反應通常係在反應溶劑中進行。關於反應溶劑,可舉5. Description of the Invention (49) The method of 5 1 0 7,1 9 9 3" or the method described later in the synthesis example. In U.S., the method of foaming the gas into the reaction solution is called gasification in which a larger excess amount of the sulfonate (lb) is usually used in the reaction. This reaction is usually carried out in a reaction solvent. With respect to the reaction solvent, effluent, organic solvent such as tetrahydrofuran, N,N-dimethylformamide, N,/monomethyl decylamine, [nitrile dimethyl benzoate, etc. are preferred hydrazines N: Dimethyl ethanoamine, ... and dimethyl ya ... good and good: 〇〇 part by weight of the acid salt (lb), the reaction solvent is usually used in an amount of 5-1 〇〇 weight, in parts by weight Preferably, and 2 〇 5 parts by weight. If necessary, the aforementioned organic solvent can be used together with water. In this case, the amount of water and the total amount of organic solvent used in the 'organic solvent' is 5-1 parts by weight, preferably 1〇_1 parts by weight, and 2〇_9〇. The weight is very good. The reaction system is usually carried out at a temperature of usually 0 to 10 (TC, preferably 5 to 6 (rc is preferred, and 5 to 4 Torr), usually 5 minutes to 12 hours, and preferably 1 minute to 5 hours. 4a) In the reaction with the N-hydroxyindole imine compound, the molar ratio of the N-hydroxyquinone imine compound to the sulfonium gas (4a) is usually 〇. 〇〇1〇〇, 〇·3-5. 0佳,和〇· 5_2· 〇特佳. · This reaction is usually carried out in a reaction solvent.

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出乙腈、、二曱基曱醯胺、四氫呋喃 —曱亞砜、二氣曱 以乙腈、四氫呋喃、 烷了 /臭曱烷、及氣仿為較佳例子 及一氣曱燒為特佳。 =00份重量之磺醯氯(4a),反應 5 - 1 0 0份重|,! η ,Λ Λ 之用里通常為 佳。 以1〇-100份重量較佳,及20-50份重量特 關於驗催化劑, 月女、2,6 -二甲17比π定 及一叶雙環十一烯 啶為特佳。 可舉出三乙胺、吡 、Ν,Ν -二乙基苯胺 為較佳例子,以三 υ定、Ν,Ν-二異丙基乙 4 — 一甲胺基口比tl定、 乙胺及4-二曱胺基咄 以 鹼催化劑對磺醯氯(4a)之莫耳比通常為丨.〇 1 · 5 - 5 · 0 較佳,及 1 · 5 - 3. 0 特佳。 · 反應至 終8(rc,以5_3(rc較佳之溫度下進行 b刀I里至6小日可,及以1 〇分鐘至2小時較佳。 化學式(2-A)或(2-B)之N-磺醯基氧醯亞胺化合物( 用反應式⑴所示之步驟,自去甲篇烯衍°生物諸:。 去曱伯烯衍生物(2b)或(3b)或先前關於化學式(1 _A)或 (1-B)之銻磺酸鹽化合物(1)之製法所說明之其之氣化衍生 物製備亞磺酸鹽(lb),然後依據反應式(4)所示^步驟^而 製得。 此外’關於除鏑磺酸鹽化合物(1 )及N -續酿基氧醯亞胺 化合物(2 )外之酸產生劑(I)之例子,可舉出砜化合物、磺 酸δ旨化合物、二石黃醯基重氮甲烧化合物、二績醯基甲烧化 合物、磺酸肟化合物、磺酸肼化合物等等。Ethyl acetonitrile, decyl decylamine, tetrahydrofuran-sulfoximine, dioxane, acetonitrile, tetrahydrofuran, alkane/odorane, and gas imitation are preferred examples and a gas-fired gas is particularly preferred. = 00 parts by weight of sulfonium chloride (4a), the reaction is 5 - 100 parts by weight |, ! η , Λ Λ is usually preferred. Preferably, it is preferably from 1 〇 to 100 parts by weight, and from 20 to 50 parts by weight, with respect to the catalyst, virgin, 2,6-dimethyl 17 to π and one-lead bicycloundecene. Triethylamine, pyridinium, anthracene, and quinone-diethylaniline are preferred examples, and the ratio of triterpene, hydrazine, hydrazine-diisopropylethyl 4-methylamine to tl, ethylamine and The molar ratio of 4-diaminoguanidine oxime to the sulfonium chloride (4a) as a base catalyst is usually 丨.1 - 5 - 5 · 0 is preferred, and 1 · 5 - 3. 0 is particularly preferred. · Reaction to the end 8 (rc, 5 to 3 (the preferred temperature for rc is 2 to 6 hours, and preferably 1 to 2 hours. Chemical formula (2-A) or (2-B) N-sulfonyloxyindolamine compound (by the step shown in the reaction formula (1), from the demethylated article: the deuterated derivative (2b) or (3b) or previously related to the chemical formula ( 1 _A) or (1-B) oxime sulfonate compound (1) is prepared by the gasification derivative thereof to prepare a sulfinate (lb), and then according to the reaction formula (4) ^ step ^ Further, as an example of the acid generator (I) other than the oxime sulfonate compound (1) and the N-renewed oxynitride compound (2), a sulfone compound and a sulfonic acid δ can be cited. A compound, a diterpenoid-based diazonium-containing compound, a bismuth-based sulfonate compound, a sulfonium sulfonate compound, a sulfonium sulfonate compound, and the like.

C:\2D-C0DE\91-09\9lll4303.ptd 第55頁 1304060 五、發明說明(51) 現將論述此等化合物。 關於砸化合物之例子,可舉出/5 -酮砜、/5 -磺醯砜、及 此等化合物之α -重氮化合物。C:\2D-C0DE\91-09\9lll4303.ptd Page 55 1304060 V. INSTRUCTIONS (51) These compounds will now be discussed. Examples of the ruthenium compound include a 5-ketosulfone, a /5-sulfonylsulfone, and an α-diazonium compound of such a compound.

〇 Ζ1 II I C一S〇2—C—R Ζ1 | Ζ1 I C—S〇2—CHo—S〇2 C R z2 砜化合物之明確例子包括以下化學式(3 - 1 )及(3 - 2 )之化 合物: (3-1) (3 - 2) 其中R、Z1、及Z2係與化學式(I )中之定義相同,化學式 (3-2)中之兩R 'Z1、及Z2基團係相同或不同。 關於續酸酿化合物之例子,可舉出續酸烧S旨、續酸_烧 醋、續酸芳S旨、及續酸亞胺S旨。 石黃酸_化合物之明確例子包括以下化學式(4 )之化合 物··〇Ζ1 II IC-S〇2-C-R Ζ1 | Ζ1 IC-S〇2—CHo—S〇2 CR z2 Clear examples of sulfone compounds include compounds of the following chemical formulas (3 - 1) and (3 - 2): (3-1) (3 - 2) wherein R, Z1, and Z2 are the same as defined in the formula (I), and the two R'Z1 and Z2 groups in the formula (3-2) are the same or different. Examples of the acid-reducing compound include a sour acid-steaming method, a sulphuric acid-steaming vinegar, a sulphuric acid sulphuric acid, and a resorcinimide S. A clear example of the rhein _ compound includes the compound of the following chemical formula (4)··

C:\2D-CODE\91-09\91114303.ptd 第56頁 1304060 五、發明說明(52) 其中R、Z1、及Z2係與化學式(I)中之定義相同,當存在 二或多個R、Zi、及Z2基團時,此等基團可相同或不同;A 代表源自於五倍子酚、α -羥曱基安息香等等之j價有機殘 基;及j為卜3之整數。 關於二磺醯基重氮曱烷化合物之例子,可舉出以下化學 式(5 )之化合物: Z1 Z1C:\2D-CODE\91-09\91114303.ptd Page 56 1304060 V. INSTRUCTIONS (52) wherein R, Z1, and Z2 are the same as defined in chemical formula (I), when there are two or more R In the case of the Zi, and Z2 groups, these groups may be the same or different; A represents a j-valent organic residue derived from gallicol, α-hydroxydecyl benzoin or the like; and j is an integer of 3 . As an example of the disulfonyl diazonium compound, a compound of the following chemical formula (5): Z1 Z1

R一C一S〇2—C—S〇2—C—RR-C-S〇2-C-S〇2-C-R

其中R、Z1、及Z2係與化學式(I )中之定義相同,兩R、 Z1、及Z2基團係相同或不同。 關於二磺醯基曱烷化合物之例子,可舉出以下化學式 (6 )之化合物: Z1IR—C—S〇2* VI ~C一S〇2* wWherein R, Z1, and Z2 are the same as defined in the formula (I), and the two R, Z1, and Z2 groups are the same or different. As an example of the disulfonyl decane compound, a compound of the following chemical formula (6): Z1IR-C-S〇2* VI ~C-S〇2* w

z1 I•C—RZ1 I•C—R

其中R、Z1、及Z2係與化學式(I )中之定義相同,兩R、Wherein R, Z1, and Z2 are the same as defined in the chemical formula (I), and two R,

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五、發明說明(53) Z1、及Z2基團係相同或不同;v及w分別代表芳烏 子、直鏈或分支鏈單價脂族烴基、或具有雜原* 氫原 機基團,其限制條件為V或界之至少一者為芳義,之單價有 結合形成含至少一不飽和鍵之單環或多環結1,或V及w可 學式(7)之基團: °苒、或以下化V. INSTRUCTIONS (53) The Z1 and Z2 groups are the same or different; v and w represent a flavonoid, linear or branched monovalent aliphatic hydrocarbon group, respectively, or have a heterogeneous* hydrogenogen group, the limitation The condition is that at least one of V or a circle is a ary meaning, the unit price of which is combined to form a monocyclic or polycyclic ring 1 containing at least one unsaturated bond, or V and w can be a group of formula (7): °苒, Or below

⑺ 其中V’及W’分別代表氫原子、鹵原子、烷基、产 芳基、或芳烧基,或各與相同或不同碳原子結合二夕ς、, 結合形成單環碳結構,及a為2至1 〇之整數。 關於磺酸肟化合物之例子,可舉出以下化學彳 (8-2)之化合物: ή 干式(8-〇或 R8 Ζ1 (8-1)(7) wherein V' and W' each represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, or an aryl group, or each of the same or different carbon atoms is bonded to a bismuth, which combines to form a monocyclic carbon structure, and a An integer from 2 to 1 〇. Examples of the sulfonium sulfonate compound include the following compounds of the chemical oxime (8-2): ή dry type (8-〇 or R8 Ζ1 (8-1)

NC—C=N—〇—S〇29—R f R9 21 I i i R—S〇2—0—N=C—C=N 一〇—S〇2——c〜r (8—2) Z2 R9 22 其中R、Z1、及Z2係與化學式(I)中之定義相同,化學式 (8-2)中之兩R、Z1、及ζ2基團係相同或不同,及r8及r9分別 代表單價有機基團。NC—C=N—〇—S〇29—R f R9 21 I ii R—S〇2—0—N=C—C=N 一〇—S〇2—c~r (8—2) Z2 R9 22 wherein R, Z1, and Z2 are the same as defined in the formula (I), and the two R, Z1, and ζ2 groups in the formula (8-2) are the same or different, and r8 and r9 represent a monovalent organic group, respectively. Group.

C:\2D-CODE\9I-09\91114303.ptd 第58頁 1304060 五、發明說明(54) 或 (9 - 2 )之化合物: Z1C:\2D-CODE\9I-09\91114303.ptd Page 58 1304060 V. Inventive Note (54) or (9-2) Compound: Z1

I (9-1)I (9-1)

R—〒一s〇2~NH—NH: F f1 Z1 R—c-so2—nh-nh-so2—C-R (9-2) Z2 z2 其中R、Z1、及z2係與化學式(T、 (9-2)中之兩R、Z1、&Z2某團# ^之定義相同,化學式 心 及乂暴團係相同或不同。 去型輻射敏,羞-性^脂組成物 成正3射敏感性樹脂組成物係包括下列任-組 成的組成物· C1 ) ( a )酸產峰郝丨μ、 ^ / 〜夂座生dU),及(b)包含酸可裂解某 =之樹脂,其不溶或幾乎不溶於鹼,A當酸可裂解基團解 雔時變為可溶於鹼(以下稱為「含酸可裂解基團之樹脂」) (以下稱為「正型輻射敏感性樹脂組成物(丨)」);或 (i i) (a)酸產生劑(I),( c)驗可溶解樹脂,及(d)鹼溶解控R—〒一s〇2~NH—NH: F f1 Z1 R—c-so2—nh-nh-so2—CR (9-2) Z2 z2 where R, Z1, and z2 are related to the chemical formula (T, (9) -2) The two R, Z1, & Z2 groups # ^ have the same definition, the chemical heart and the turbulence group are the same or different. The de-radiation sensitive, shame-salt compound composition into a positive 3 radiation sensitive resin The composition includes the following composition of composition - C1) (a) acid production peak Hao Hao μ, ^ / ~ 夂 生 d (), and (b) resin containing acid cleavable = insoluble or almost Insoluble in alkali, A becomes soluble in alkali when the acid cleavable group is decomposed (hereinafter referred to as "resin containing acid-cleavable group") (hereinafter referred to as "positive type radiation-sensitive resin composition" ))); or (ii) (a) acid generator (I), (c) soluble resin, and (d) alkali dissolution control

制劑(以下稱為「正型輻射敏感性樹脂組成物(ii)」)。I 關於使用於此等正型輻射敏感性樹脂組成物中之酸產生 劑(I ),具熱及化學安定性之酸產生劑為較佳。 現將說明本發明之正型輻射敏感性樹脂組成物(i)及正 型輻射敏感性樹脂組成物(i i )。 在正型輻射敏感性樹脂組成物(i )及正型輻射敏感性樹Formulation (hereinafter referred to as "positive type radiation sensitive resin composition (ii)"). I It is preferred to use an acid generator (I) in the positive-type radiation-sensitive resin composition, and an acid generator having thermal and chemical stability. The positive type radiation sensitive resin composition (i) and the positive type radiation sensitive resin composition (i i ) of the present invention will now be described. In positive-type radiation-sensitive resin composition (i) and positive-type radiation-sensitive tree

C:\2D-〇〇de\91-09\91114303 .ptd 第59頁 1304060 射敏感性樹脂 i )中之酸產生 用之酸產生劑 團之樹脂或鹼 以0 · 1 - 1 5份重 (I)之量低於0 如其多於20份 熱性有減低的 之樹脂 關於正 之樹脂, 基、醇羥 以一或多 得之本身 變為可溶 當使僅 用於使用 樹脂組成 顯影條件 劑塗層之 基團之樹 關於含 酸產生劑(I)可個別或以兩者或以 五、發明說明(55) 脂組成物(i i )中 組合使用。 使用於正型輻 性樹脂組成物(i 或其他視需要使 之含酸可裂解基 0 . :1 - 2 0份重量, 佳。如酸產生劑 明的預期效果; 圖案形狀、及耐 含酸可裂解某園 型輻射敏感性樹脂組 可舉出可由包含一或 基、或羧基之樹脂, 個酸可裂解基團取代 不溶或幾乎不溶於鹼 於鹼之樹脂。 由含酸可裂解基團之 由包括含酸可裂解基 物形成之光阻劑塗層 下顯影時,若於顯影 起始薄膜厚度,則在 脂之特性稱為「不溶 酸可裂解基團之樹脂 之 組成物(i)及正型輻射敏感 劑(I )的量係視酸產生劑(I) 的類型而異。對1 〇 〇份重量 可溶解樹脂,此一量通常為 量較佳,及0 · 2 - 1 2份重量特 • 1份重量,則很難獲致本發 重量,則對輻射之透明度、 傾向。 成物(i)之含酸可裂解基團 多個含氧官能基諸如驗經 經由透過在酸之存在下解離 含氧官能基中之氫原子而製 ,及當酸可裂解基團解離時 樹脂製成之光阻劑塗層在與 團之樹脂之正型輕射敏感性 形成光阻劑圖案相同之臉性 之後殘留5 0 %或以上之光阻 本發明中將此一含酸可裂解 或幾乎不溶於鹼」。 中之酸可裂解基團之例子,C:\2D-〇〇de\91-09\91114303 .ptd Page 59 1304060 The resin or base of the acid generating agent used for the acid-generating resin i) is 0 · 1 - 15 parts by weight ( I) is less than 0. If more than 20 parts of the resin having reduced heat are related to the positive resin, the base and the alcoholic hydroxyl group become soluble in one or more of them. The group of the group of the acid-containing agent (I) may be used singly or in combination with both or in accordance with the invention (55) of the lipid composition (ii). For use in a positive-type cationic resin composition (i or other acid-containing cleavable group if necessary): .1 - 20 parts by weight, preferably. If the acid generator is expected to have an effect; pattern shape, and acid resistance The group of the cleavage-type radiation-sensitive resin may be a resin which may be substituted by a resin containing one or a base or a carboxyl group, and which is insoluble or almost insoluble in alkali-base resin by an acid cleavable group. When developing under the photoresist coating layer including the acid-containing cleavable substrate, if the thickness of the starting film is developed, the characteristic of the grease is referred to as "the composition (i) of the resin which does not dissolve the acid cleavable group and The amount of the positive radiation sensitizer (I) varies depending on the type of the acid generator (I). The resin is soluble in 1 part by weight, and the amount is usually preferably in an amount of from 0 to 2 - 12 parts. Weight • 1 part by weight, it is difficult to obtain the weight of the hair, the transparency and tendency of radiation. The acid-containing cleavable group of the product (i) contains a plurality of oxygen-containing functional groups such as the test through the presence of acid Dissociated from the hydrogen atom in the oxygen-containing functional group, and when the acid is cleaved The photoresist coating made of the resin in the dissociation of the group remains after 50% or more of the photoresist having the same positive light-sensitive sensitivity as the photoresist pattern of the resin of the group. An acid-containing cleavable or almost insoluble base. An example of a cleavable group in an acid,

C:\2D-OODE\91-O9\91114303.ptd 第60頁 1304060 五、發明說明(56) 可舉出經取代曱基、1-經取代乙基、1-經取代正丙基、卜 分支鏈烧基、碎烧基、錯烧基、烧氧魏基、醯基、環狀酸 可裂解基團等等。 關於經取代甲基之例子,可舉出甲氧曱基、甲硫甲基、 乙氧曱基、乙硫甲基、甲氧乙氧曱基、芊氧曱基、芊硫曱 基、苯曱醯曱基、4-溴苯曱醯曱基、4-曱氧苯甲醯曱基、 4 -甲硫苯曱醯曱基、α -曱基苯甲醯甲基、環丙基曱基、 苄基、二苯曱基、三苯甲基、金剛烷曱基、4-溴苄基、4-硝苄基、4-曱氧笮基、4-曱硫苄基、4-乙氧苄基、4-乙硫 苄基、胡椒基、曱氧羰曱基、乙氧羰曱基、正丙氧羰曱 基、異丙氧羰曱基、正丁氧羰曱基、第三丁氧羰曱基等 等。 關於卜經取代乙基之例子,可舉出1 -曱氧乙基、1 -曱硫 乙基、1,1-二曱氧乙基、1-乙氧乙基、1-乙硫乙基、1,1-二乙氧乙基、1-苯氧乙基、1-苯硫乙基、1,1-二苯氧乙 基、1-辛氧乙基、1-爷硫乙基、1_環丙氧乙基、1-環己氧 乙基、1-苯乙基、1,1-二苯乙基、1_曱氧幾乙基、1-乙氧 羰乙基、1-正丙氧羰乙基、1-異丙氧羰乙基、1-正丁氧羰 乙基、1-第三丁氧羰乙基、1-環己氧羰乙基等等。 關於1 -經取代正丙基之例子,可舉出1 -曱氧正丙基、:1 -乙氧正丙基等等。 關於1-分支鏈烷基之例子,可舉出異丙基、第二丁基、 第三丁基、1,1-二曱基丙基、1-甲基丁基、1,1_二曱基丁 基等等。C:\2D-OODE\91-O9\91114303.ptd Page 60 1304060 V. Description of Invention (56) A substituted thiol group, a 1-substituted ethyl group, a 1-substituted n-propyl group, and a branched branch are mentioned. A chain alkyl group, a calcined group, a styryl group, a pyrolyzed group, a sulfhydryl group, a cyclic acid cleavable group, and the like. Examples of the substituted methyl group include a methoxy group, a methylthiomethyl group, an ethoxylated group, an ethylthiomethyl group, a methoxyethoxymethyl group, an anthracene group, an anthracene group, and a benzoquinone group. Sulfhydryl, 4-bromophenylhydrazino, 4-oxobenzoylmethyl, 4-methylthiophenyl, α-mercaptobenzylidenemethyl, cyclopropylindenyl, benzyl Base, diphenyl fluorenyl, trityl, adamantyl fluorenyl, 4-bromobenzyl, 4-nitrobenzyl, 4-nonyloxyindolyl, 4-indolethiobenzyl, 4-ethoxybenzyl, 4-ethylthiobenzyl, piperonyl, anthranilylcarbonyl, ethoxycarbonylcarbonyl, n-propoxycarbonylhydrazino, isopropoxycarbonylhydrazino, n-butoxycarbonylhydrazino, tert-butoxycarbonylindolyl and many more. Examples of the substituted ethyl group include 1-oxooxyethyl group, 1-pyridylthioethyl group, 1,1-dioxaxyethyl group, 1-ethoxyethyl group, and 1-ethylthioethyl group. 1,1-diethoxyethyl, 1-phenoxyethyl, 1-phenylthioethyl, 1,1-diphenoxyethyl, 1-octyloxyethyl, 1-arylthioethyl, 1_ Cyclopropoxyethyl, 1-cyclohexyloxyethyl, 1-phenylethyl, 1,1-diphenylethyl, 1-methoxypolyethyl, 1-ethoxycarbonylethyl, 1-n-propoxy Carboxyethyl, 1-isopropyloxycarbonylethyl, 1-n-butoxycarbonylethyl, 1-tert-butoxycarbonylethyl, 1-cyclohexyloxycarbonylethyl and the like. Examples of the 1-substituted n-propyl group include 1-nonoxyn n-propyl group, 1-ethoxyethoxypropyl group, and the like. Examples of the 1-branched alkyl group include an isopropyl group, a second butyl group, a third butyl group, a 1,1-dimercaptopropyl group, a 1-methylbutyl group, and a 1,1-difluorene group. Butyl and the like.

C:\2D-CODE\91-09\91114303.ptd 第61頁 1304060 基之例 乙矽烷 矽烷基 第三丁 苯石夕炫 基之例 乙鍺烷 鍺烷基 第三丁 二苯鍺 羰基之 第三丁 之例子 基、戊 蔻酿基 酿基、 醯基、 巴豆醯 丁烯二 基、對 醯基、 基、異 子,可舉 基、三乙 、三異丙 矽烷基、 基、三苯 子,可舉 基、三乙 、三異丙 錯候*基、 烷基、三 例子,可 氧羰基等 ,可舉出 醯基、三 、軟脂醯 戊二醢基 癸二醯基 基、油酿 醯基、樟 献醢基、 桂皮醯基 菸鹼醯基 五、發明說明(57) 關於矽烷 基、曱基二 曱基二異丙 基、曱基二 基、曱基二 關於鍺烷 基、曱基二 曱基二異丙 基、曱基二 烧基、甲基 關於烷氧 丙氧羰基、 關於醯基 醯基、己醢 醢基、肉豆 醯基、號ί白 醢基、壬二 丙烯醯基、 醯基、曱反 基、異酞醯 醯基、阿托 基、菸鹼醯 等。 關於環狀 出三曱矽烷 矽统基、異 石夕烧基、第 三第三丁矽 石夕院基%•等 出三曱鍺烷 鍺烷基、異 錯燒基、弟 三第三丁鍺 苯鍺烷基等 舉出曱氧羰 等。 乙醢基、丙 曱基乙酿基 基、硬脂醯 、己二醢基 、丙稀酿基 基、順丁烯 腦二醯基、 萘甲醯基、 、咬喃曱醯 、對甲苯磺 基、乙基二 丙基^—甲;^7 三丁基二曱 烧基、笨二 醯基、丁醯 、異戊醯基 基、草醯基 、胡椒酿基 、丙快醯基 二酿基、反 苯甲醯基、 曱苯醯基、 基、2 -嘆吩 醯基、曱磺 酸可裂解基團之例子’可舉出環丙基、環戊 甲矽烷 燒基、 矽烷 甲石夕垸 曱鍺烷 燒基、 鍺燒 二曱鍺 基、乙基二 丙基二曱鍺 三丁基二甲 烷基、苯基 等。 基、乙氧幾基、異 基、庚 、月桂 、丙二 、皮脂 、甲基 丁稀二 狄醯 氫阿托 甲醯 醯基等C:\2D-CODE\91-09\91114303.ptd Page 61 1304060 Base Example Ethyl decyl decyl tributyl phenyl sulfonyl acetonyl group Examples of three butyl groups, glutinous aryl base, sulfhydryl, croton butene, fluorenyl, ketone, genomic, triethyl, triisopropyl sulfonyl, phenyl, triphenyl Examples thereof include a base, a triethylidene, a triisopropylidene group, an alkyl group, a tri-example, an oxycarbonyl group, and the like, and examples thereof include a mercapto group, a trisole, a decyl fluorenyl fluorenyl group, and an oil. Sulfhydryl, decyl thiol, cinnabarinyl nicotine ruthenium 5, invention description (57) on decyl, decyldidecyldiisopropyl, fluorenyldiyl, fluorenyl dialkyl, fluorenyl Di-diyldiisopropyl, fluorenyldialkyl, methyl, alkoxypropoxycarbonyl, fluorenyl, hexyl, myristyl, fluorenyl, fluorenyl Sulfhydryl, indole, isodecyl, atol, nicotine, etc. About tricyclodecane fluorene base, iso-stone kiln, third third 矽 矽 夕 院 • • 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等 等Examples of the benzofluorene group include anthraceneoxycarbonyl and the like. Ethyl thiol, propyl sulfonyl aryl, stearin, hexamethylene, propylene, butyl phthalate, naphthyl, acenaphthyl, p-toluene Ethyldipropyl^-methyl;^7 tributyl fluorenyl, stilbene, butyl sulfonium, isoamyl sulfhydryl, oxalate, pepper broth, propyl thiol Examples of the benzhydryl group, the indoylhydrazine group, the benzyl group, the 2-infrathenyl group, and the sulfonic acid cleavable group are exemplified by a cyclopropyl group, a cyclopentamethylene group, and a decane group. A decane-based group, an anthracenyl dithiol group, an ethyldipropyldiindenyltributyldimethylene group, a phenyl group or the like. Base, ethoxy group, hetero group, heptane, laurel, propylene, sebum, methyl dimethyl dithene, hydrogen atropine, hydrazine, etc.

C:\2D-mDE\91-09\91114303.ptd 第62頁 13〇4〇6〇 五、發明說明(58) 基、環己基、4-第三丁基環 基、正葙基、異苍基、三環八二、4〜甲氧環己基、環己烯 基、四氫呋喃&、四氫硫哌;^、金剛烷基、四氫哌喃 虱哌喃基、4-曱氣四氫哌喃美:、四氫硫哌喃基、3-溴四 四氫噻吩一;[,1 —二氧土、4〜甲氧四氫硫哌喃基、3〜 基、曱基三環癸基、乙基±^产甲八基金剛烷基、乙基金剛烷 戊基、曱基環己基、乙^ ^ ^癸基、甲基環戊基、乙基環 分別代表具卜4個碳原子^之衣基、及〜C(RiQ)3基團(其中Rio 碳原子之經取代或未絲取。。鏈或分支鏈烷基或具4 - 2 0個 基團Rig之至少一者為脂環烴基,其限制條件為 單價脂環烴基,或基團R1G之,原子之經取代或未經取代 鍵結之栌原早一叔你α、任何兩者結合及與兩基團R1G所 抑:火’j> 成具4一20個碳原子之經取代或未經取 八一貝脂壞烴土,而其餘的R1G為具卜4個碳原子之直鏈或 ^ ^鏈烷基或具4-20個碳原子之經取代或未經取代單價脂 玉衣fe基)。 ^在此等酸可裂解基團中,芊基、第三丁氧羰曱基、卜曱 虱乙基、卜乙氧乙基、卜環己氧乙基、卜乙氧正丙基、第 —I基、丨,1一一曱基丙基、三曱矽烷基、第三丁氧羰基、 紅第二丁基蜋^基、異病基、三環癸基、四氫哌喃基、四 氫呋喃基、四氫硫哌喃基、四氫硫呋喃基、曱基金剛烷 基、乙基金剛烷基、曱基三環癸基、乙基三環癸基、某 環戊基、乙基環戍基、曱基環已基、乙基環己基、 土 -c(p)3基團等等為較佳。 關於-C(R1G)3基團之明確例子,可舉出卜(2-正格基)_卜 第63頁 C:\2D-CODE\91-09\91114303.ptd 1304060 五、發明說明(59) 四 =基乙基1一(5〜羥基-2 -正拍基)一;[_曱基乙基、 2/六基1甲基乙基、1一(8-羥基-3-四環癸基)--曱基乙 ί/i甲1—基)+甲基乙基、卜(3 一經基—卜金剛广元 土 I 土乙基、2一曱基—2-正谣基、2-曱基-5-羥基-2- 羥基-2-金剛烷基等 ,你基、3-甲基〜3一四環癸基、3一曱基一8—羥基一3_四環癸 基、2 -曱基-2 -金剛烷基、2 一曱基一7_ 、 等0 、呈引至έ酉文可裂解基團之樹脂中之酸可裂解基團之量 各I可裂解基團之樹脂中之含氧官能基及酸可裂解基團 之總數。中之酸可裂解基團之數目量)為10-1 00%較佳,及 1 5 1 ΟΟ/g又更佳’雖然此量係視酸可裂解基團及酸可裂解 基團所引入之鹼可溶解樹脂的類型而異。 利用政膠,參透層析術測得之含酸可裂解基團之樹脂(A) 之聚苯乙烯還原重量平均分子量(以下稱為「Mw」)為 1,0 0 0-5 0 0, 〇〇〇 較佳,^ 〇〇〇 —3〇〇, 〇〇〇 更佳,及3, 〇〇〇一 3 0 0,0 0 0 特佳。 含酸可裂解基團之樹脂之利用凝膠滲透層析術測得之Mw 對聚苯乙稀還原數目平均分子量(以下稱為Γ Mn」)之比 (Mw/Mn)通常為卜1〇,及以卜5較佳。 此等含酸可裂解基團之樹脂可個別或以兩者或以上之組 合使用。 關於使用KrF準分子雷射之正型輻射敏感性樹脂組成物 (1 )之適當的含酸可裂解基團之樹脂,包含以下化學式 (10)之一或多個重複單元及一或多個含酸可裂解基團之重C:\2D-mDE\91-09\91114303.ptd Page 62 13〇4〇6〇5, invention description (58) base, cyclohexyl, 4-tert-butylcyclo, n-decyl, hetero-cyan , tricyclooctane, 4 to methoxycyclohexyl, cyclohexenyl, tetrahydrofuran &tetrahydrothiophene; ^, adamantyl, tetrahydropyranopyrinoyl, 4-helium tetrahydroper Amoxime: tetrahydrothiopyranyl, 3-bromotetrahydrothiophene; [, 1 - dioxin, 4 methoxytetrahydrothiopyranyl, 3 yl, decyl tricyclodecyl, Ethyl±^, 甲八 Fund, alkanoyl, ethyladamantanylpentyl, indolylcyclohexyl, ethyl^^yl, methylcyclopentyl, and ethylcyclo, respectively, represent four carbon atoms a thiol group and at least one of a group of 4 to 20 groups Rig or a group of 4 to 20 groups Rig. , the restriction condition is a monovalent alicyclic hydrocarbon group, or a group R1G, the substituted or unsubstituted bond of the atom, the original uncle, the combination of any two, and the inhibition of the two groups R1G: fire' j> Formed with 4-20 carbon atoms replaced or not taken Bayi fat The hydrocarbonaceous earth, and the remaining R1G is a linear or ^ alkylene group having 4 carbon atoms or a substituted or unsubstituted monovalent fat having 4 to 20 carbon atoms. ^ In these acid cleavable groups, fluorenyl, tert-butoxycarbonyl sulfhydryl, diterpene ethyl, ethoxyethyl, hexaoxyethyl, ethoxypropyl, I group, hydrazine, 1,4-mercaptopropyl, tridecyl, tert-butoxycarbonyl, red t-butyl fluorenyl, heterocyclic, tricyclodecyl, tetrahydropyranyl, tetrahydrofuranyl , tetrahydrothiopyranyl, tetrahydrothiofuranyl, fluorenyl, adamantyl, decyltricyclodecyl, ethyltricyclodecyl, a cyclopentyl, ethylcyclodecyl Further, a fluorenylcyclohexyl group, an ethylcyclohexyl group, a soil-c(p)3 group or the like is preferred. For a clear example of the -C(R1G)3 group, it can be mentioned that (2-positive lattice)_b page 63 C:\2D-CODE\91-09\91114303.ptd 1304060 V. Description of invention (59) Tetrakiladyl 1-(5-hydroxy-2-n-and-one)-[[曱-ylethyl, 2/hexyl-1methylethyl, 1-mono(8-hydroxy-3-tetradecyl) )--曱基乙ί/i甲甲-基)+methylethyl, Bu (3 一基基-Bu Jingang Guangyuan soil I soil ethyl, 2 fluorenyl- 2-n-decyl, 2-mercapto -5-Hydroxy-2-hydroxy-2-adamantyl, etc., 3-methyl~3~tetracyclodecyl, 3-indolyl-8-hydroxy-3_tetracyclodecyl, 2-indole Alkyl-adamantyl, 2-indenyl- 7-, etc. 0, the amount of the acid cleavable group in the resin which is introduced into the cleavable group, the content of each of the cleavable groups of the resin The total number of oxygen functional groups and acid cleavable groups. The number of acid cleavable groups in the) is preferably from 10 to 00%, and more preferably 1 5 1 ΟΟ / g. The type of base soluble resin which is introduced by the cleavage group and the acid cleavable group varies. The polystyrene reduction weight average molecular weight (hereinafter referred to as "Mw") of the resin (A) having an acid cleavable group as measured by gas chromatography is 100,0 0 - 0 0 0, 〇 〇〇 better, ^ 〇〇〇 - 3 〇〇, 〇〇〇 better, and 3, 〇〇〇 1 0 0 0, 0 0 0 is particularly good. The ratio of Mw to the number average molecular weight of polystyrene reduction (hereinafter referred to as "Mn") (Mw/Mn) measured by gel permeation chromatography of a resin containing an acid cleavable group is usually 〇1〇, And I think it is better. These acid-cleavable group-containing resins may be used singly or in combination of two or more. A suitable acid-cleavable group-containing resin using the positive-type radiation-sensitive resin composition (1) of the KrF excimer laser, comprising one or more repeating units of the following chemical formula (10) and one or more Weight of acid cleavable group

C:\2D-OODE\9l -09\91 Π4303 .ptd 第64頁 1304060 五、發明說明(60) 複單元之不溶或幾乎不溶於鹼之樹脂為較佳(以下將此樹 脂稱為「樹脂(B 1 )」)。樹脂(B1 )亦適合使用於使用ArF準 分子雷射、F2準分子雷射、電子束等等之正型輻射敏感性 樹脂組成物(i )中。C:\2D-OODE\9l -09\91 Π4303 .ptd Page 64 1304060 V. INSTRUCTIONS (60) It is preferred that the compound is insoluble or almost insoluble in alkali resin (hereinafter referred to as "resin ( B 1 )"). The resin (B1) is also suitably used in the positive type radiation-sensitive resin composition (i) using an ArF excimer laser, an F2 excimer laser, an electron beam or the like.

(R11)f(〇H)e 其中R11代表氫原子或單價有機基團,及e及f係自卜3之整 數,其滿足式(e + f)S5。 關於化學式(1 0)之重複單元的例子,可舉出可經由裂解 諸如4 -羥苯乙烯、3 -羥苯乙烯、2 -羥苯乙烯、4 -羥基-α-曱基苯乙烯、3-曱基-4-羥苯乙烯、2-甲基-4-羥苯乙烯、 2-甲基-3 -羥苯乙烯、4-甲基-3 -羥苯乙烯、5-甲基-3 -羥 苯乙烯、3, 4 -二羥笨乙烯、及2, 4, 6 -三羥苯乙烯之化合物 之可聚合不飽和鍵而得之單元。 在此等重複單元之中,經由裂解4-羥苯乙烯、3-羥苯乙 稀、2 -經苯乙稀、或4 -經基-α -曱基苯乙烯之可聚合不飽 和鍵而得之單元為較佳。 關於具有前述之酸可裂解基團之重複單元,可舉出具有 一或多種類型之酸官能基諸如酚羥基及羧基之重複單元, 以化學式(1 0 )所示之重複單元或經由裂解(曱基)丙烯酸之(R11)f(〇H)e wherein R11 represents a hydrogen atom or a monovalent organic group, and e and f are integers from the group 3, which satisfy the formula (e + f) S5. Examples of the repeating unit of the chemical formula (10) can be exemplified by pyrolysis such as 4-hydroxystyrene, 3-hydroxystyrene, 2-hydroxystyrene, 4-hydroxy-α-mercaptostyrene, 3- Mercapto-4-hydroxystyrene, 2-methyl-4-hydroxystyrene, 2-methyl-3-hydroxystyrene, 4-methyl-3-hydroxystyrene, 5-methyl-3-hydroxyl A unit derived from a polymerizable unsaturated bond of a compound of styrene, 3,4-dihydroxy-p-ethylene, and 2,4,6-trihydroxystyrene. Among these repeating units, it is obtained by cracking a polymerizable unsaturated bond of 4-hydroxystyrene, 3-hydroxystyrene, 2-styrene, or 4-thio-α-mercaptostyrene. The unit is preferred. With respect to the repeating unit having the acid cleavable group described above, a repeating unit having one or more types of acid functional groups such as a phenolic hydroxyl group and a carboxyl group, a repeating unit represented by the chemical formula (10) or via cleavage (曱) may be mentioned. Acrylic

C:\2D-C0DE\91-09\91114303.ptd 第 65 頁 1304060 五、發明說明(61) 可聚合不飽和鍵(其中齡經基或魏基之氫原子經前述之酸 可裂解基團取代)而得之重複單元為較佳。特佳的基團為 經由裂解下列化合物之可聚合不飽和鍵而得之重複單元: 4-第三丁氧苯乙烯、4-第三丁氧羰基氧苯乙烯、4-第三丁 氧羰基曱氧苯乙烯、4 -四氫咬喃氧苯乙稀、4-四氫旅喃氧 苯乙烯、2-乙氧乙氧苯乙烯、2 -環戊氧乙氧苯乙烯、2-環 己氧乙氧苯乙烯、(曱基)丙烯酸第三丁酯、(曱基)丙烯酸 甲基金剛烷酯、(曱基)丙烯酸乙基金剛烷酯、(甲基)丙烯 酸甲基環戊酯、(曱基)丙烯酸乙基環戊酯、(甲基)丙烯酸 曱基環己酯、(曱基)丙烯酸乙基環己酯等等。 樹脂(B 1 )可包括一或多個除前述重複單元外之重複單元 (以下稱為「其他重複單元(bl)」)。 關於其他重複單元(b 1)之例子,可舉出經由裂解以下化 合物之可聚合不飽和鍵而得之單元:乙烯基芳族化合物諸 如苯乙烯類,諸如苯乙烯、α -曱基苯乙烯、2-曱基苯乙 烯、3-曱基苯乙烯、4-甲基苯乙烯、2-甲氧苯乙烯、3-甲 氧苯乙烯、4-曱氧苯乙烯、及4-(2 -第三丁氧羰基乙氧)苯 乙烯;(曱基)丙烯酸酯諸如(甲基)丙烯酸曱酯、(曱基)丙 烯酸乙酯、(曱基)丙烯酸正丙酯、(曱基)丙烯酸正丁酯、 (曱基)丙烯酸異丁酯、(曱基)丙烯酸正戊酯、(曱基)丙烯 酸正己酯、(曱基)丙烯酸2-乙基己酯、(曱基)丙烯酸2-羥 乙酯、(曱基)丙烯酸2_羥丙酯、(曱基)丙烯酸3-羥丙酯、 (曱基)丙烯酸苯酯、(曱基)丙烯酸苯乙酯、及以下化學式 (11)-(13)之單體;C:\2D-C0DE\91-09\91114303.ptd Page 65 1304060 V. INSTRUCTIONS (61) Polymerizable unsaturated bonds (the hydrogen atom of the sulfhydryl group or the thiol group is replaced by the aforementioned acid cleavable group) The resulting repeating unit is preferred. A particularly preferred group is a repeating unit obtained by cleavage of a polymerizable unsaturated bond of the following compounds: 4-tert-butoxystyrene, 4-tert-butoxycarbonyloxystyrene, 4-tert-butoxycarbonylhydrazine Oxystyrene, 4-tetrahydropyrene, 4-tetrahydrobenzastyrene, 2-ethoxyethoxystyrene, 2-cyclopentyloxyethoxystyrene, 2-cyclohexyloxy Oxystyrene, tert-butyl (meth) acrylate, methyl adamantyl (mercapto) acrylate, ethyl adamantyl (meth) acrylate, methyl cyclopentyl (meth) acrylate, Ethylcyclopentyl acrylate, nonylcyclohexyl (meth) acrylate, ethylcyclohexyl (decyl) acrylate, and the like. The resin (B 1 ) may include one or more repeating units (hereinafter referred to as "other repeating units (bl)") other than the above repeating unit. As examples of the other repeating unit (b 1), a unit obtained by cracking a polymerizable unsaturated bond of the following compound: a vinyl aromatic compound such as styrene such as styrene, α-mercaptostyrene, or the like may be mentioned. 2-mercaptostyrene, 3-mercaptostyrene, 4-methylstyrene, 2-methoxystyrene, 3-methoxystyrene, 4-nonoxystyrene, and 4-(2 - third (butoxycarbonyl ethoxy) styrene; (fluorenyl) acrylate such as decyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, (fluorenyl) isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, 2-ethylhexyl acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl (meth) acrylate, phenyl (meth) acrylate, phenyl ethyl (meth) acrylate, and the following formula (11) - (13) body;

C:\2D-C0DE\91-09\91114303.ptd 第66頁 1304060 五、發明說明(62) 〇 ch3 ch3 H2〇=HC—C- 0~ C—( CH2^—C-〇-C—CH=CH2 (11) ch3 g ch3 〇C:\2D-C0DE\91-09\91114303.ptd Page 66 1304060 V. Description of invention (62) 〇ch3 ch3 H2〇=HC—C- 0~ C—( CH2^—C-〇-C—CH =CH2 (11) ch3 g ch3 〇

H2C=HC-E-〇-fcH2H2C=HC-E-〇-fcH2

Ο CH2)~〇-C—CH=CH2 (13) 其中g為卜6之整數; 不飽和羧酸諸如(曱基)丙烯酸、巴豆酸、順丁烯二酸、反 丁烯二酸、及桂皮酸; 不飽和羧酸之羧烷基酯諸如(甲基)丙烯酸2 -羧乙酯、(曱 基)丙烯酸2 -羧丙酯、及(甲基)丙烯酸3 -羧丙酯; 不飽和腈基化合物諸如(曱基)丙烯腈、α -氯丙烯腈、巴 豆腈、順丁烯二腈、及反丁烯二腈; 不飽和醯胺化合物諸如(曱基)丙烯醯胺、Ν,Ν-二甲基(曱 基)丙烯醯胺、巴豆醯胺、順丁烯二醯胺、及反丁烯二醯 胺; 不飽和醯亞胺化合物諸如順丁烯二醯亞胺、Ν-苯基順丁烯 二醯亞胺、及Ν-環己基順丁烯二醯亞胺;Ο CH2)~〇-C—CH=CH2 (13) where g is an integer of 6; unsaturated carboxylic acids such as (mercapto)acrylic acid, crotonic acid, maleic acid, fumaric acid, and cassia a carboxylic acid; a carboxyalkyl ester of an unsaturated carboxylic acid such as 2-carboxyethyl (meth)acrylate, 2-carboxypropyl (meth)acrylate, and 3-carboxypropyl (meth)acrylate; unsaturated nitrile group Compounds such as (fluorenyl) acrylonitrile, α-chloroacrylonitrile, crotononitrile, maleic nitrile, and fumaronitrile; unsaturated guanamine compounds such as (fluorenyl) acrylamide, hydrazine, hydrazine Methyl (mercapto) acrylamide, crotonamide, maleimide, and fumaride; unsaturated quinone imine compounds such as maleimide, fluorene-phenyl cis Equinone imine, and fluorene-cyclohexylmethyleneimine;

C: \2D-mDE\91 -09\91114303. ptd 第67頁 1304060 五、發明說明(63) 及其他含氮乙;fcfjj基化合物,諸如N-乙烯基-ε -己内酿胺、 Ν -乙烯基咄咯啶酮、2 -乙烯基吡啶、3 -乙烯基咄啶、4〜乙 稀基吼咬、2 -乙浠基咪唑、及4 —乙烯基咪唑。 在此等其他重複單元(b丨)中,可經由裂解化合物諸如α -曱基苯乙烯、4 -(2〜第三丁氧羰基乙基氧)苯乙烯中之可 聚合不飽和鍵而得之單元、化學式(丨丨)之單體、或化學式 (1 2 )之單體為較佳。 Χ 關於使用KrF準分子雷射之正型輻射敏感性樹脂組成物 (i )之其他的含酸可裂解基團之樹脂,可適當地使用其中 甲酿紛駿型環氧樹脂之酚羥基之氫原子經酸可裂解基團取 代之樹脂。關於此樹脂之較佳酸可裂解基團之例子,可舉 出乙氧乙基、第三丁基、第三丁氧羰基、第三丁氧羰甲基 等等。 關於使用ArF準分子雷射之正型輻射敏感性樹脂組成物 (i )之適當的含酸可裂解基團之樹脂,包含以下化學式 (14)之:或多個重複單元及/或以下化學式(15)之’一或多 個重複單元之不溶或幾乎不溶於鹼之樹脂為較佳(以 此樹脂稱為「樹脂(B2)」)。樹脂(B2)亦適合使用 KrF準分子雷射、ArF準分子雷射、&準分子雷射、雷 等等之正型輻射^感性樹脂組成物(i)中。 电卞术C: \2D-mDE\91 -09\91114303. ptd Page 67 1304060 V. Inventive Note (63) and other nitrogen-containing B; fcfjj-based compounds, such as N-vinyl-ε-caprolactam, Ν- Vinylpyrrolidone, 2-vinylpyridine, 3-vinylcridine, 4- to ethylene-based bite, 2-acetylimidazole, and 4-vinylimidazole. In these other repeating units (b丨), it is possible to obtain a polymerizable unsaturated bond in a cleavage compound such as α-mercaptostyrene or 4-(2~3 butyloxycarbonylethyloxy)styrene. The unit, the monomer of the formula (丨丨), or the monomer of the formula (12) is preferred. Χ Regarding the acid-containing cleavable group-containing resin of the positive-type radiation-sensitive resin composition (i) using the KrF excimer laser, the phenolic hydroxyl group of the styrene-based epoxy resin may be suitably used. A resin in which an atom is replaced by an acid cleavable group. As examples of preferred acid cleavable groups of the resin, there may be mentioned an ethoxyethyl group, a tert-butyl group, a third butoxycarbonyl group, a third butoxycarbonylmethyl group and the like. A suitable acid-cleavable group-containing resin using the positive radiation-sensitive resin composition (i) of the ArF excimer laser, comprising the following chemical formula (14): or a plurality of repeating units and/or the following chemical formula ( 15) It is preferred that the one or more repeating units are insoluble or hardly soluble in alkali (this resin is referred to as "resin (B2)"). The resin (B2) is also suitably used in the positive radiation type inductive resin composition (i) of KrF excimer laser, ArF excimer laser, & excimer laser, thunder, and the like. Electroacupuncture

C:\2D-CODE\9卜09\91114303.ptd 第68頁 '-HO 一-CH-A- 1304060C:\2D-CODE\9卜09\91114303.ptd Page 68 '-HO One-CH-A- 1304060

五、發明說明(64) 其中B分別代表氫原子或酸可裂解基團,至少一個b為酸 可裂解基團,D分別代表氫原子或具1-4個碳原子之直鏈或 分支鏈單價烷基,及X為〇至2之整數。5. Description of the invention (64) wherein B represents a hydrogen atom or an acid cleavable group, at least one b is an acid cleavable group, and D represents a hydrogen atom or a linear or branched chain unit having 1-4 carbon atoms, respectively. Alkyl, and X is an integer from 〇 to 2.

(15)(15)

其 別代 原子 團結 烴基 取代 經取 關 例如 構之 中R12代表氫原子、甲基、經烧基或全I燒基,及R1。分 表具1 -4個碳原子之直鏈或分支鏈烷基或具4_2〇個碳 之經取代或未經取代單價脂環烴基,或任何兩個ri❹基 合形成具4-20個碳原子之經取代或未經取代二價脂環 ,而其餘的R1G基團為具卜4個碳原子之經取代或未婉 的直鏈或分支鏈烷基或具4_2〇個碳原子之經取、二It is substituted by an atomic unity hydrocarbyl group. For example, R12 represents a hydrogen atom, a methyl group, a burnt group or an all-I group, and R1. a linear or branched alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted monovalent alicyclic hydrocarbon group having 4 to 2 carbon atoms, or any two ri❹ groups formed to have 4 to 20 carbon atoms a substituted or unsubstituted divalent alicyclic ring, and the remaining R1G group is a substituted or untwisted linear or branched alkyl group having 4 carbon atoms or a taken or 2?

代單價脂環烴基。 4禾 於化學式(14)之較佳的重複單元,可舉出經由裂 丄以下單體之可聚合不飽和鍵而得之具有去曱孩烯架 -第三丁氧羰基雙環[2.2.1]庚—2-烯A monovalent alicyclic hydrocarbon group. The preferred repeating unit of the formula (14) is a deuterated frame-tert-butoxycarbonyl bicyclo ring obtained by splitting the polymerizable unsaturated bond of the monomer below [2.2.1] Geng-2-ene

C:\2D-C0DE\91-09\91114303.ptd 1304060 五、發明說明(65) 5-(4-第三丁基環己氧)羰基雙環[2· 2· 1 ]庚-2 -烯、 5-(1-乙氧乙氧)羰基雙環[2. 2.1]庚-2 -烯、 5-(1-環己氧乙氧)羰基雙環[2· 2. 1 ]庚-2 -烯、 5 -第三丁氧羰基曱氧羰基雙環[2. 2. 1 ]庚-2_烯、 5 -四氫呋喃氧羰基雙環[2· 2· 1 ]庚-2 -烯、 5 -四氫哌喃氧羰基雙環[2· 2· 1 ]庚-2 -烯、 8-第三丁氧羰基四環[4· 4. 0· I2,5· 17’1G ]十二烷-3 -烯、 8-(4-第三丁基環己氧)羰基四環[4· 4· 0· I2’5· 17’1G]十二烷 - 3 -烯、 8-(1-乙氧乙氧)羰基四環[4· 4· 0· I2’5· I7,1。]十二烷-3 -烯、 8-(1-環己氧乙氧)羰基四環[4· 4· 0· I2,5· 17’1Q]十二烷-3-稀、 8-第三丁氧羰基甲氧羰基四環[4· 4· 0· I2’5· 17’1G]十二烷-3-稀、 8 -四氫呋喃氧羰基四環[4· 4· 0· I2’5· 17’1G]十二烷-3 -烯、及 8 -四氫哌喃氧羰基四環[4. 4. 0· I2’5· 17,1G ]十二烷-3 -烯。 關於化學式(1 5 )之較佳重複單元的例子,可舉出可經由 裂解(曱基)丙烯酸第三丁酯、(曱基)丙烯酸2-曱基-2-金 剛烧S旨、(曱基)丙稀酸2-乙基-2 -金剛烧_、(曱基)丙稀 酸2-曱基環戊酯、(曱基)丙烯酸2-乙基環戊酯、(曱基)丙 烯酸2-曱基環己酯、(曱基)丙烯酸2-乙基環己酯之可聚合 不飽和鍵而得之單元,及以下化學式(15-1)-(15-12)之單 元0C:\2D-C0DE\91-09\91114303.ptd 1304060 V. Description of the invention (65) 5-(4-Tert-butylcyclohexyloxy)carbonylbicyclo[2·2·1]hept-2-ene, 5-(1-ethoxyethoxy)carbonylbicyclo[2.2.1]hept-2-ene, 5-(1-cyclohexyloxyethoxy)carbonylbicyclo[2·2.1]hept-2-ene, 5 - a third butoxycarbonyl oxime oxycarbonylbicyclo[2.2.1]hept-2-ene, 5-tetrahydrofuranoxycarbonylbicyclo[2·2·1]hept-2-ene, 5-tetrahydropyranyloxycarbonyl Bicyclo[2·2·1]hept-2-ene, 8-t-butoxycarbonyltetracyclo[4·4.0·I2,5·17'1G]dodecane-3-ene, 8-(4) -T-butylcyclohexyloxy)carbonyltetracyclo[4·4·0· I2'5·17'1G]dodecane-3-ene, 8-(1-ethoxyethoxy)carbonyltetracyclo[4 · 4· 0· I2'5· I7,1. ]Dodecane-3-ene, 8-(1-cyclohexyloxyethoxy)carbonyltetracyclo[4·4·0· I2,5·17'1Q]dodecane-3-dilute, 8-third Butoxycarbonylmethoxycarbonyltetracyclo[4·4·0· I2'5·17'1G]dodecane-3-dilute, 8-tetrahydrofuranoxycarbonyltetracyclo[4·4·0· I2'5· 17 '1G] dodecane-3-ene, and 8-tetrahydropyranyloxycarbonyltetracyclo [4. 4. 0·I2'5· 17, 1G ] dodecane-3-ene. Examples of preferred repeating units of the chemical formula (15) include, by means of cleaving (meth)acrylic acid tert-butyl ester, (mercapto)acrylic acid 2-mercapto-2-gold singly, ) 2-ethyl-2-carboacetic acid acrylate, 2-mercaptocyclopentanyl (mercapto) acrylate, 2-ethylcyclopentanyl (meth) acrylate, 2-(fluorenyl) acrylate a unit derived from a polymerizable unsaturated bond of nonylcyclohexyl ester or 2-ethylcyclohexyl (meth) acrylate, and a unit of the following chemical formula (15-1)-(15-12)

C:\2D-CODE\91-09\91114303.ptd 第70頁 1304060 五、發明說明(66) .12C:\2D-CODE\91-09\91114303.ptd Page 70 1304060 V. Description of invention (66) .12

R 12 -(-(p—ch2+· -f - cp—ch2+ 〇=c I 〇 〇=c I o h3oc-ch3 H3C-0 一 CH3R 12 -(-(p-ch2+· -f - cp-ch2+ 〇=c I 〇 〇=c I o h3oc-ch3 H3C-0 a CH3

OHOH

(15-3) (15-1) (15-2) • 12(15-3) (15-1) (15-2) • 12

R 12 >12 c—ch2-R 12 >12 c-ch2-

〇=c I〇=c I

〇 I〇 I

CH2")~ +9—CH: 〇二9 〇 h3c - έ-ch3Af o=c I 〇CH2")~ +9—CH: 〇二9 〇 h3c - έ-ch3Af o=c I 〇

(15-5) (15-6) 圓 Hill C:\2D-CODE\91-09\91114303.ptd 第71頁 1304060 五、發明說明(67)(15-5) (15-6) Round Hill C:\2D-CODE\91-09\91114303.ptd Page 71 1304060 V. Description of Invention (67)

R C 12 o=c I 〇 ch3R C 12 o=c I 〇 ch3

HO •ch2+HO •ch2+

C — CH2" ch3 R12 卜 c—ch2+ o=c I 〇C — CH2" ch3 R12 Bu c—ch2+ o=c I 〇

(15-7) (15-8)(15-7) (15-8)

2 H c 3 H2 H c 3 H

HO (15-10) (15-11) (15-12) 樹脂(B 2 )可包括一或多個除前述重複單元外之重複單元 (以下稱為「其他重複單元(b2)」)。 關於其他重複單元(b 2 ),可舉出經由裂解以下化合物之 可聚合不飽和鍵而得之單元··具有去甲蓓烯架構之單體諸 如去曱馅烯(雙環[2· 2· 1 ]庚-2-烯)、 5-甲基雙環[2. 2. 1 ]庚-2-烯、 5-乙基雙環[2· 2· 1 ]庚-2-烯、 5-羥基雙環[2· 2· 1 ]庚-2-烯、 5-氟雙環[2. 2· 1 ]庚-2-烯、 四環[4· 4· 0· I2,5· 17,1G ]十二烷-3 -烯、 8-曱基四環[4· 4. 0· I2,5· 17’】〇]十二烷-3 -烯、HO (15-10) (15-11) (15-12) The resin (B 2 ) may include one or more repeating units other than the above repeating unit (hereinafter referred to as "other repeating unit (b2)"). With regard to the other repeating unit (b 2 ), a unit obtained by cracking a polymerizable unsaturated bond of the following compound may be mentioned: a monomer having a nortenylene structure such as deuterated alkene (bicyclo[2·2·1) ]hept-2-ene), 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[2·2·1]hept-2-ene, 5-hydroxybicyclo[2] · 2· 1 ]hept-2-ene, 5-fluorobicyclo[2. 2·1 ]hept-2-ene, tetracyclo[4·4·0·I2,5·17,1G]dodecane-3 - alkene, 8-mercaptotetracyclo[4·4. 0· I2,5·17']〇]dodecane-3-ene,

C:\2D-CODE\91-09\91114303.ptd 第 72 頁 1304060C:\2D-CODE\91-09\91114303.ptd Page 72 1304060

8-乙基四環[4. 4. 0. I2' iu]十二烷_3_稀、 8-經基四環[4.4.0.12,5.17,11)]十二烷_3_烯、 8- 氣四環[4.4.0.12,5.17,1«)]十二烷_3-烯; 不飽和羧酸酐諸如順丁烯二酸酐及衣康酸酐;8-ethyltetracyclo[4. 4. 0. I2' iu]dodecane_3_dilute, 8-peryltetracycline [4.4.0.12, 5.17,11)]dodecane_3_ene, 8 - gas tetracyclic [4.4.0.12, 5.17, 1 «)] dodecane-3-ene; unsaturated carboxylic anhydride such as maleic anhydride and itaconic anhydride;

先前經舉例為樹脂(B1)之其他重複單元(bl)之例子的 基)丙稀酸酯; T (曱基)丙細酸3 -經基- 1 ~•金剛燒酉旨 之(曱基)丙烯酸酯: r13 以 下化學式(1 6 )所示a base acrylate which has been exemplified by other repeating units (bl) of the resin (B1); T (mercapto) propionate 3 - thiol- 1 ~• Acrylate: r13 The following chemical formula (1 6 ) is shown

(16) 其中R代表氣原子或曱基;等等。 當樹脂(B2)具有以上化學式(1 於川:丁稀二酸昕之重複單元作為其他重複單元⑽二 •關於使用F2準分子雷射之正型輕射敏感性樹脂組成物 (1 )之適當的含酸可裂解基團之樹脂,可舉出包含以下化 學式(17)之:或多個結構單元及/或以下化學式(18)之-或多個結構單元之不溶或幾乎不溶於鹼之聚矽氧烷(以下 將此樹脂稱為「樹脂(B3)」)。樹脂(B3)包含化學式(17)(16) wherein R represents a gas atom or a sulfhydryl group; When the resin (B2) has the above chemical formula (1, the repeating unit of chuan: butyl succinate is used as the other repeating unit (10) 2. The appropriate formula for the positive-type light-sensitive resin (1) using the F2 excimer laser The resin containing an acid-cleavable group may be an insoluble or almost insoluble alkali-containing polymer comprising the following chemical formula (17): or a plurality of structural units and/or the following chemical formula (18) or a plurality of structural units; Hexane (hereinafter referred to as "resin (B3)"). Resin (B3) contains chemical formula (17)

第73頁 C:\2D-CODE\9卜09\91114303.ptd 1304060 五、發明說明(69) 之結構單元較佳。樹脂(B3)亦適合使用於使用KrF準分子 雷射、ArF準分子雷射、電子束等等之正型輻射敏感性樹 脂組成物(i )中。 Ε—S—ο— 0Page 73 C:\2D-CODE\9 Bu 09\91114303.ptd 1304060 V. The structural unit of the invention (69) is preferred. The resin (B3) is also suitably used in the positive radiation-sensitive resin composition (i) using a KrF excimer laser, an ArF excimer laser, an electron beam or the like. Ε—S—ο— 0

E——S——R ο (17) (18) 其中E分別代表含酸可裂解基團之單價有機基團,及rh代 ΐ;1 單:Γί原子之經取代或未經取代的直鍵、分支鍵 且及(18)中之基團Ε的較佳例子,可舉出 八有馱1裂解基團之脂環烴基(諸如環烷基、 一 ,<癸基、四環癸基、及金剛烧基)、 可二: 齒化芳族烴基等等。 』表解暴團之 關於樹脂(Β 3 )之化學式π 7 )夕έ士接s - 舉* 風丄)構早7^的特佳例子," 下化子式(17-1)至(17-4)之結構單元。E——S——R ο (17) (18) wherein E represents a monovalent organic group containing an acid cleavable group, and rh is a hydrazine; 1 single: a substituted or unsubstituted direct bond of a Γί atom Preferred examples of the branching bond and the group Ε in (18) include an alicyclic hydrocarbon group of an octadecyl cleavage group (such as a cycloalkyl group, a < fluorenyl group, a tetracyclic fluorenyl group, And adamantane base), can be two: agglomerated aromatic hydrocarbon group and the like. 』 解 解 之 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 - - - - - - - - - - - - Structural unit 17-4).

c(ch3>3 cf3 〇c(ch3>3 cf3 〇

13040601304060

C:\2D-CODE\91-09\91114303.ptd 第75頁 1304060 五、發明說明(71) 樹脂(B3)可包括一或多個除前述結構單元外之結構單元 (以下稱為「其他結構單元(b3)」)。 關於較佳的其他結構單元(b3),可舉出經由將烷基烷氧 矽烷諸如曱基三甲氧矽烷、甲基三乙氧矽烷、乙基三曱氧 矽烷、乙基三乙氧矽烷等等水解及縮合而製得之結構單 元;及由以下化學式(18-1 )-(18-4)所示之結構單元。 〇C:\2D-CODE\91-09\91114303.ptd Page 75 1304060 V. INSTRUCTION DESCRIPTION (71) The resin (B3) may include one or more structural units other than the aforementioned structural unit (hereinafter referred to as "other structure" Unit (b3)"). With regard to the preferred other structural unit (b3), an alkyl alkoxysilane such as decyltrimethoxy decane, methyltriethoxy decane, ethyltrioxane, ethyltriethoxy decane, etc. may be mentioned. a structural unit obtained by hydrolysis and condensation; and a structural unit represented by the following chemical formulas (18-1) to (18-4). 〇

cf3 〇Cf3 〇

cf3 (18-2) (18-1)Cf3 (18-2) (18-1)

〇 〇〇 〇

(18-3) (18-4)(18-3) (18-4)

C:\2D-CODE\91-09\91114303.ptd 第76頁 1304060 五、發明說明(72) 樹脂(B 3 )可經 可裂解基團(共) 有酸可裂解基g 聚矽氧烷中而製 在具有單價有 (共)聚縮合作用 經由在酸性催化 繼續反應而使石夕 關於酸性催化 酸、硝酸、蝴酸 機酸諸如曱酸、 酸、琥珀酸、順 對駄酸、乙酸朝: 苯項酸、及曱石黃 在此等酸性催 丙二酸、順丁烯 酸酐為特佳。 由將具有 聚縮合, 之單價有 得。 機基團之 中,使用 劑之存在 烷化合物 劑之例子 、磷酸、 乙酸、正 丁烯二酸 、順丁烯 酸。 化劑之中 二酸、反 單 <貝有機基團之矽烷化合物與酸 或經由將酸可裂解基團及/或具 機基團引入至先前製備得之有機 之 ,及 化劑 、硫 ;有 丙二 酸、 對甲 酸、 烯二 矽烷化合物與酸可裂解基團 酸性催化劑作為催化劑較佳 下聚縮合,並藉由加入鹼催 反應特佳。 ,y舉出無機酸諸如氫氣酸 四氯化鈦、氯化辞及氯化鋁 丙酸、丁酸、戊酸、草酸、 、反丁烯二酸、己二酸、酞 二酸酐、擰檬酸、苯磺酸、 ,虱氯酸、硫酸、乙酸、草 丁烯二酸、乙酸酐、及順丁 關上之鹼催化劑的例子,可舉出無機鹼諸如 鋰、虱虱化鈉、氫氧化鉀、氫氧化鈣、氫氧化鋇、护=, 納、故酸氫卸、碳酸納、及碳酸鉀;有機驗諸如=a次氫 三正丙胺、三正丁胺、及吼ϋ定。 _ 乙fee、 驗可溶解樹月j 解樹 能 使用於正型輻射敏感性樹脂組成物(i i)中之驗可、、容 脂係具有一或多個展現與鹼性顯影溶液之親和力之=C:\2D-CODE\91-09\91114303.ptd Page 76 1304060 V. INSTRUCTIONS (72) Resin (B 3 ) can be passed through a cleavable group (co) acid cleavable group g polyoxane And the monovalent (co)polycondensation is carried out by continuing the reaction in the acid catalysis to make the Shixi acid-catalyzed acid, nitric acid, acid acid such as citric acid, acid, succinic acid, cis-paraic acid, acetic acid toward: Among them, benzoic acid and vermiculite are particularly preferred for acid amic acid and maleic anhydride. It is obtained by a unit price which will have a polycondensation. In the organic group, an example of an alkane compound in the presence of a reagent, phosphoric acid, acetic acid, maleic acid, or maleic acid. a diacid, an anti-single <bean organic group of a decane compound and an acid or by introducing an acid cleavable group and/or an organic group to the previously prepared organic compound, and a chemical; It is preferred to carry out polycondensation of malonic acid, p-formic acid, an enedioxane compound and an acid cleavable group acidic catalyst as a catalyst, and it is particularly preferable to add an alkali catalyzed reaction. , y cite inorganic acids such as hydrogen tetrachloride titanium chloride, chlorination and aluminum chloride propionic acid, butyric acid, valeric acid, oxalic acid, fumaric acid, adipic acid, sebacic acid anhydride, citric acid Examples of the catalysts of benzenesulfonic acid, chlorous acid, sulfuric acid, acetic acid, squalic acid, acetic anhydride, and cis-butylate include inorganic bases such as lithium, sodium telluride, and potassium hydroxide. Calcium hydroxide, barium hydroxide, hydrazine, sodium, acid hydrogen, sodium carbonate, and potassium carbonate; organic tests such as = a hydrogen tri-n-propylamine, tri-n-butylamine, and hydrazine. _ Bfee, test soluble tree month j solution tree can be used in the positive type radiation sensitive resin composition (i i), the resin has one or more exhibiting affinity with the alkaline developing solution =

C:\2D-OODE\91-O9\91114303.ptd 第77頁 1304060 五、發明說明(73) 基,例如,含氧S旎基諸如酚羥基、醇羥基、或羧基的樹 脂0 關於此一鹼可/谷解樹脂之例子,可舉出具有一或多個以 下化學式(1 9 )至(2 1)之重複單元之加成聚合樹脂,及具有 一或多個以下化學式(2 2 )之重複單元之聚縮合樹脂。C:\2D-OODE\91-O9\91114303.ptd Page 77 1304060 V. Description of the invention (73) Base, for example, a resin containing an oxygen S-sulfenyl group such as a phenolic hydroxyl group, an alcoholic hydroxyl group, or a carboxyl group. Examples of the retortable resin include an addition polymerization resin having one or more repeating units of the following chemical formulas (1 9 ) to (2 1), and having one or more repeats of the following chemical formula (2 2 ) A polycondensation resin of the unit.

2^~ o=c2^~ o=c

OHOH

o=c c=〇 I I OH OH (20) (21) 其中R15及R17分別代表氫原子或曱基,Rie代表羥基、羧基、 -R18C00H、-0R18C00H、-0C0R18C00H、或-COOR18COOH(R18 分 別代表基團-(C H2 )h -,其中h係1 - 4之整數)。o=cc=〇II OH OH (20) (21) wherein R15 and R17 represent a hydrogen atom or a fluorenyl group, respectively, Rie represents a hydroxyl group, a carboxyl group, -R18C00H, -ORRC00H, -0C0R18C00H, or -COOR18COOH (R18 represents a group respectively) -(C H2 )h -, where h is an integer from 1 to 4).

其中R19分別代表氫原子或具1 -4個碳原子之直鏈或分支鏈 烷基。 在鹼可溶解樹脂係加成聚合樹脂之情況中,此一樹脂可Wherein R19 represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms, respectively. In the case of an alkali-soluble resin-based addition polymerization resin, the resin may be

C:\2D-CODE\91-09\911143O3.ptd 第78頁 1304060 五、發明說明(74) 僅由化學式(19)至(21)之重複單元形成,或可更包含一或 多個其他重複單元(以下稱為r其他重複單元(c丨)」),只 要樹脂可溶解於鹼性顯影劑中即可。 關於其他重複單元(c 1 )之例子,可舉出樹脂(β丨)之其他 重複單元(b 1)等等。 在驗可〉谷解樹脂係聚縮合樹脂之情況中,此一樹脂可僅 由化學式(22)之重複單元形成,或可更包含一或多個其他 重複單元(以下稱為「其他重複單元(〇2)」),只要掛脂可 溶解於鹼性顯影劑中即可。 雖然一般無法指定鹼可溶解樹脂中之化學式(1 9 )至(2 2 ) 之重,單元的含量,且其係根據其他重複單元(cl)或其他 重複單元(c2)之類型而異,但此一含量為1〇-1〇〇莫耳百分 比較佳,及2 0 - 1 0 0莫耳百分比更佳。 、 刀 當樹脂具有包含碳-碳不飽和鍵之重複單元,諸如,比 方,,化學式(19)及(22)之重複單元時,鹼可溶解樹脂可 以氫化物使用。在此情況,氫化度通常為化學式(1 (2 2 )之重複單元、及其他類似重複單元中 、 >6反;5反不俄牙口 鍵之總量的70%或以下,以50%或以下較佳,β 4 U %或以下 又更佳。如氫化度多於70%,則鹼可溶解榭 〆 ▽ w月曰利用給柯強 影劑的可顯影性會減低。 ^ 關於正型幸§射敏感性樹脂組成物(i i )中 1 <鹼可滋:紐與 脂,包含聚(4 -羥基苯乙烯)、4 -羥基笨乙祕/」 对 十匕佈/4-羥其一 甲基苯乙稀共聚物、4-經基苯乙稀/笨乙烯共聚ς «- 主成份之樹脂為特佳。 寻寺马C:\2D-CODE\91-09\911143O3.ptd Page 78 1304060 V. INSTRUCTIONS (74) Formed only by repeating units of formula (19) to (21), or may further comprise one or more other repeats The unit (hereinafter referred to as r other repeating unit (c丨)) may be used as long as the resin is soluble in the alkaline developer. Examples of the other repeating unit (c 1 ) include other repeating units (b 1) of the resin (β丨) and the like. In the case of the test of the glutamic resin-based polycondensation resin, the resin may be formed only by the repeating unit of the formula (22), or may further comprise one or more other repeating units (hereinafter referred to as "other repeating units ( 〇 2)"), as long as the fat can be dissolved in the alkaline developer. Although it is generally impossible to specify the weight of the chemical formula (1 9 ) to (2 2 ) in the alkali-soluble resin, the content of the unit, and it varies depending on the type of other repeating unit (cl) or other repeating unit (c2), but The content is preferably 1 〇 -1 〇〇 Molar percentage, and 2 0 - 1 0 0 mole percentage is better. Knife When the resin has a repeating unit containing a carbon-carbon unsaturated bond, such as, for example, a repeating unit of the formulae (19) and (22), the alkali-soluble resin can be used as a hydride. In this case, the degree of hydrogenation is usually 70% or less of the total amount of the repeating unit of the formula (1 (2 2 ), and other similar repeating units, >6 counter; 5 anti-Russian mouth bonds, at 50% or Preferably, β 4 U % or less is more preferable. If the degree of hydrogenation is more than 70%, the developability of the base can be reduced by using the alkali dye. §Injection-sensitive resin composition (ii) 1 <alkali can be used: nucleus and fat, including poly(4-hydroxystyrene), 4-hydroxyl stupid /" for ten 匕 cloth / 4-hydroxy one Methyl styrene copolymer, 4-Phenylstyrene/Stupid ethylene copolymerization «- The resin of the main component is especially good.

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第82頁 1304060 五 其中R2G分別代表酸可裂解基團或第三丁氧羰曱基,ρ分 別代表具1 -4個碳原子之直鏈或分支鏈烷基、苯基、或卜 萘基,R22分別代表氫原子、具丨—4個碳原子之直鏈或分支 鏈烷基、或苯基,Q代表單鍵、—0—、-S-、— c〇—、— c〇〇—、 -SO-、-S02-、-C(R23)(R24) —(其中R23及妒分別代表氫原 子、具卜6個碳原子之直鏈或分支鏈烷基、具2 —n個碳原 子之直鏈或分支鏈酿基、苯基、或丨—萘基)、或經取代或 未經取代之伸苯基,p、q、r、s、t、u、v、及w代表〇或 以上之整數’其限制條件為化學式(2 3 )之5 - p - 1,化學 式(24)之 lOMp + r)-;!,化學式(25)215-(p + r + t)-i, 化學式(26)之20-(p + r + t + v)-i,及化學式(27)之19^ (p + r + t + v) - 1 ;類固醇(膽汁酸)諸如膽酸、去氧膽酸、及 石膽酸,含脂環族環或芳環之化合物諸如金剛烷碳酸或金 剛烧一碳酸’其中碳酸化合物中之羧基之氫原子經前述之 酸可裂解基團或第三丁氧羰甲基取代;等等。 關於高分子量驗溶解度控制劑,可使用,例如,前述之 含酸可裂解基團之樹脂。 關於正型輕射敏感性樹脂組成物(丨丨)之較佳的鹼溶解度 控制劑,可舉出類固醇(膽汁酸)諸如膽酸、去氧膽酸、及 石膽I ’含脂壤族環或芳環之化合物諸如金剛烷碳酸或金 剛元一奴酸’其中碳酸化合物中之羧基之氫原子經前述之 酸可裂解基團或第三丁氧羰曱基取代等等。 此等驗溶解度控制劑可個別或以兩者或以上之組合使 用〇P.82, 1304060, wherein R2G represents an acid cleavable group or a third butoxycarbonyl group, respectively, and ρ represents a linear or branched alkyl group having 1 to 4 carbon atoms, a phenyl group, or a naphthyl group, respectively. a linear or branched alkyl group representing a hydrogen atom, having 4 carbon atoms, or a phenyl group, Q representing a single bond, -0-, -S-, -c〇-, -c〇〇-, -SO -, -S02-, -C(R23)(R24)—(wherein R23 and 妒 respectively represent a hydrogen atom, a straight or branched alkyl group having 6 carbon atoms, and a linear chain having 2 to n carbon atoms Or a branched chain, a phenyl group, or a fluorenyl-naphthyl group, or a substituted or unsubstituted phenyl group, p, q, r, s, t, u, v, and w represent an integer of 〇 or more 'The limiting condition is 5 - p - 1 of the chemical formula (2 3 ), lOMp + r)-;!, the chemical formula (25) 215-(p + r + t)-i, the chemical formula (26) 20-(p + r + t + v)-i, and 19^(p + r + t + v) - 1 of the formula (27); steroids (bile acids) such as cholic acid, deoxycholic acid, and A cholesteric acid compound containing an alicyclic ring or an aromatic ring such as adamantane carbonic acid or diamond The hydrogen atom of the carboxyl group in the carbonic acid compound is substituted by the aforementioned acid cleavable group or the third butoxycarbonylmethyl group; and the like. As the high molecular weight solubility control agent, for example, the aforementioned acid cleavable group-containing resin can be used. Preferred alkali solubility control agents for the positive-type light-sensitive resin composition include steroids (bile acids) such as cholic acid, deoxycholic acid, and stone biliary I 'lipid-containing ring Or a compound of an aromatic ring such as adamantane carbonic acid or a ruthenium carboxylic acid wherein a hydrogen atom of a carboxyl group in the carbonic acid compound is substituted with the aforementioned acid cleavable group or a third butoxycarbonyl group. These solubility control agents may be used singly or in combination of two or more.

1304060 五、發明說明(79) J型輻射敏感性嶎脂組成物 本發明之負型輻射敏感性樹脂組成物(以下稱為「負型 輻射敏感性樹脂組成物(i i i)」)包括··( A )酸產生劑(I), (C )驗可 >谷解樹脂’及(E)在酸之存在下交聯驗可溶解樹月匕 之化合物(以下稱為「交聯劑(E)」)。 關於在負型輻射敏感性樹脂組成物(i i i )中所使用之酸 產生劑(I ),具熱及化學安定性之酸產生劑為較佳。 現將說明本發明之負型輻射敏感性樹脂組成物(i i丨)。 驗可〉谷解樹脂 關於負型輻射敏感性樹脂組成物(i i i )之鹼可溶解樹脂 的例子’可舉出關於正型輻射敏感性樹脂組成物(i丨)所舉 之樹脂。 關於負型幸§射敏感性樹脂組成物(i i i)中之驗可溶解樹 脂,含聚(4-羥苯乙烯)、4-羥苯乙烯/4—羥基-α —曱基苯 乙烯共聚物、4-羥苯乙烯/苯乙烯共聚物等等為主成份之 樹脂為較佳。 雖然鹼可溶解樹脂之Mw係根據負型輻射敏感性樹脂組成 物(111)期望的特性而異,但較佳的範圍為丨,〇〇〇-15〇, 〇〇〇 ’以3,000-100,〇〇〇之範圍更佳。 此等鹼可溶解樹脂可個別或以兩者或以 交聯劑(E) 、、, 使 關=^敏感性樹脂組成物(i i i)之交聯劑⑻的例 :二ί L具有一或多個展現與鹼可溶解樹脂之交聯反應 性之Β此基(以下稱為「可交聯官能基」)的化合物。1304060 V. INSTRUCTION OF THE INVENTION (79) J-type radiation-sensitive resin composition The negative-type radiation-sensitive resin composition of the present invention (hereinafter referred to as "negative radiation-sensitive resin composition (iii)") includes ··( A) acid generator (I), (C) test > trough resin ' and (E) cross-linking in the presence of acid to dissolve the compound of the tree sorghum (hereinafter referred to as "crosslinking agent (E) "). As the acid generator (I) used in the negative-type radiation-sensitive resin composition (i i i ), an acid generator having thermal and chemical stability is preferred. The negative-type radiation-sensitive resin composition (i i 丨) of the present invention will now be explained. In the case of the alkali-soluble resin of the negative-type radiation-sensitive resin composition (i i i ), a resin exemplified as the positive-type radiation-sensitive resin composition (i丨) can be cited. A resin which is soluble in a negative-type photosensitive resin composition (iii), comprising poly(4-hydroxystyrene), 4-hydroxystyrene/4-hydroxy-α-mercapto-styrene copolymer, A resin having a 4-hydroxystyrene/styrene copolymer or the like as a main component is preferred. Although the Mw of the alkali-soluble resin varies depending on the desired characteristics of the negative-type radiation-sensitive resin composition (111), the preferred range is 丨, 〇〇〇-15〇, 〇〇〇' at 3,000- 100, the range of 〇〇〇 is better. These alkali-soluble resins may be exemplified by the crosslinking agent (8), or the crosslinking agent (E), or the crosslinking agent (E), which has one or more of the crosslinking agent (8). A compound which exhibits cross-linking reactivity with an alkali-soluble resin (hereinafter referred to as "crosslinkable functional group").

C:\2D-CBDE\91-09\91114303.ptd 第84頁 1304060 五、發明說明(80) 關於可乂聯g能基之例子,可舉出縮水甘油醚基、縮水 ^油醋基:縮水甘油胺基、曱氧甲基、乙氧甲基、辛氧甲 土 、乙醯氧甲基、苯甲醯氧甲基、曱醯基、乙醯基、乙烯 基、異丙烯基、(二曱胺基)曱基、(二乙胺基)甲基、(二 搜甲fef)甲基、(二羥乙胺基)曱基、嗎福啉曱基等等。 _關於父聯劑(E)之例子,可舉出雙酚a環氧化合物、雙酚 F環氧化合物、雙酚s環氧化合物、酚醛型環氧樹脂環氧化 合物、I溶酚醛樹脂環氧化合物、聚(羥苯乙烯)環氧化合 物、含羥甲基之二聚氰胺化合物、含羥甲基之苯胍胺化合 物、含羥曱基之服化合物、含羥曱基之酚化合物、含烷氧 烷基之三聚氰胺化合物、含烷氧烷基之苯胍胺化合物、含 烷氧烷基之脲化合物、含烷氧烷基之酚化合物、含羧曱基 之三聚氰胺樹脂、含羧甲基之苯胍胺樹脂、含羧甲基之脲 樹脂、含羧曱基之酚樹脂、含羧曱基之三聚氰胺化合物、 含羧甲基之苯胍胺化合物、含羧甲基之脲化合物、含羧曱 基之酚化合物等等。 在此等交聯劑(E)之中,含經甲基之齡化合物、含甲氧 甲基之三聚氰胺化合物、含曱氧曱基之酚化合物、含曱氧 甲基之乙炔脲化合物、含甲氧曱基之脲化合物、及含乙醯 氧甲基之酚化合物為較佳’特佳的化合物為含甲氧甲基之 ί聚氰胺化合例如,六甲氧甲基三聚氰胺)、含甲氧甲 基之乙块脲化曰物、含曱氧甲基之服化合物等等。含甲氧 甲基之三聚氰胺化合物可於市面以註冊商標cymel3〇〇、 CYMEL3(H、CYMEL3〇3、及CYMEL3G5 講得(MUsui c—dC:\2D-CBDE\91-09\91114303.ptd Page 84 1304060 V. INSTRUCTIONS (80) Examples of the coupleable g-energy group include glycidyl ether group and shrinkage oil vinegar base: shrinkage Glycerylamino, oxime methyl, ethoxymethyl, octylmethoxy, ethoxymethyl, benzylideneoxymethyl, decyl, ethylidene, vinyl, isopropenyl, (di) Amino) fluorenyl, (diethylamino)methyl, (di-methylfef) methyl, (dihydroxyethylamino) fluorenyl, florin fluorenyl, and the like. _About the parental agent (E), bisphenol a epoxy compound, bisphenol F epoxy compound, bisphenol s epoxy compound, novolac epoxy resin epoxy compound, and phenol novolac epoxy resin a compound, a poly(hydroxystyrene) epoxy compound, a hydroxymethyl group-containing melamine compound, a methylol group-containing benzoguanamine compound, a hydroxymethyl group-containing compound, a hydroxy group-containing phenol compound, and a Alkoxyalkyl melamine compound, alkoxyalkyl group-containing benzoguanamine compound, alkoxyalkyl group-containing urea compound, alkoxyalkyl group-containing phenol compound, carboxy group-containing melamine resin, carboxymethyl group-containing Benzoylamine resin, carboxymethyl group-containing urea resin, carboxymethyl group-containing phenol resin, carboxy group-containing melamine compound, carboxymethyl group-containing benzoguanamine compound, carboxymethyl group-containing urea compound, carboxy group containing carboxy group Base phenolic compounds and the like. Among these crosslinking agents (E), a compound containing a methyl group, a melamine compound containing a methoxymethyl group, a phenol compound containing an anthracene group, an acetylene urea compound containing a decyloxymethyl group, and the like The oxonium-based urea compound and the acetoxymethyl-containing phenol compound are preferably 'excellent compounds are methoxymethyl-containing melamine compounds such as hexamethoxymethyl melamine) and methoxy-containing groups. A group of urea urea compounds, a compound containing a methoxymethyl group, and the like. The methoxyl-containing melamine compound can be found in the market under the registered trademarks cymel3〇〇, CYMEL3 (H, CYMEL3〇3, and CYMEL3G5 (MUsui c-d)

第85頁 1304060 五、發明說明(81) C〇·, Ltd.製造),含曱氧曱基之乙炔脲化合物可於市面以 5主冊商標 CYMEL 1174 購得(Mitsui Cyanamid Co·,Ltd·製 造)等等;及含曱氧曱基之脲化合物可於市面以註冊商標 MX2 9 0 購得(Sanwa Chemical Co·, Ltd·製造)等等。 亦可將經由以前述之可交聯官能基取代鹼可溶解樹脂中 之含氧官能基之氫原子而具有交聯劑特性之樹脂適當地使 用作為交聯劑(E )。儘管明確的百分比可視可交聯官能基 及可交聯官能基所引入之鹼可溶解樹脂的類型而異,但可 父辩p g能基之引入量通常為驗可溶解樹脂中之全部含氧官 能基的5-60莫耳百分比,以1〇-50莫耳百分比較佳,及 1 5-40莫耳百分比又更佳。低於5莫耳百分比之可交聯官能 基的量會使殘留塗層率減小,且有造成圖案之扭曲及膨脹 的傾向。如其量超過6 0莫耳百分比,則經曝光區域之可顯 影性有減低的傾向。 以含曱氧曱基之化合物諸如二曱氧曱脲及四曱氧曱基乙 快脈作為負型輕射敏感性樹脂組成物(i i i )之交聯劑(g )較 佳。 交聯劑(E)可個別或以兩者或以上之組合使用。 其他酸姦哇丨 正型輻射敏感性樹脂組成物(i )、正型輻射敏感性樹脂 組成物(i i )、及負型輻射敏感性樹脂組成物(i i i)可視需 要而包含除酸產生劑(I )外之酸產生劑(以下稱為「其他酸 產生劑」)。 關於其他酸產生劑之例子,可舉出磺醯亞胺化合物、蛾Page 85 1304060 V. INSTRUCTIONS (81) Manufactured by C〇·, Ltd., an oxyacetylene-containing acetylene urea compound is commercially available from Mitsui Cyanamid Co., Ltd. under the 5-booklet trademark CYMEL 1174. And the like; and the hydrazine-containing urea compound is commercially available under the registered trademark MX2 90 (manufactured by Sanwa Chemical Co., Ltd.) and the like. A resin having a crosslinking agent property by substituting a hydrogen atom of an oxygen-containing functional group in the alkali-soluble resin with the aforementioned crosslinkable functional group may be suitably used as the crosslinking agent (E). Although a clear percentage may vary depending on the type of alkali-soluble resin that can be introduced by the crosslinkable functional group and the crosslinkable functional group, the amount of the pg energy base that can be introduced is usually the total oxygen-containing function in the soluble resin. The 5-60 mole percentage of the base is preferably from 1 to 50 mole percent, and more preferably from 1 to 5 to 40 mole percent. An amount of crosslinkable functional group of less than 5 moles reduces the residual coating rate and tends to cause distortion and expansion of the pattern. If the amount exceeds 60% by mole, the visibility of the exposed area tends to decrease. A crosslinking agent (g) which is a negative light-sensitive resin composition (i i i ) is preferably used as a negative light-sensitive resin composition (i i i ) containing a ruthenium sulfonium-containing compound such as dioxonium carbazide and a ruthenium oxyfluoride. The crosslinking agent (E) may be used singly or in combination of two or more. Other acid-removing wah-positive type radiation-sensitive resin composition (i), positive-type radiation-sensitive resin composition (ii), and negative-type radiation-sensitive resin composition (iii) may contain an acid-removing agent as needed ( I) An acid generator (hereinafter referred to as "other acid generator"). Examples of other acid generators include sulfonimide compounds and moths.

C:\2D-CODE\91-O9\91114303.ptd 第 86 頁 1304060 五、發明說明(82) 鹽化合物、颯化合物、續酸自旨化合物、二績醯基重氮曱烧 化合物、二磺醯基甲烷化合物、磺酸肟化合物、磺酸肼化 合物等等。 此等其他酸產生劑之例子如下: 〈石黃酿亞胺化合物〉 關於磺醯亞胺化合物之例子,可舉出以下化學式(2 8 )之 化合物: αC:\2D-CODE\91-O9\91114303.ptd Page 86 1304060 V. INSTRUCTIONS (82) Salt compounds, antimony compounds, acid-retaining compounds, diterpenoid diazonium terbene compounds, disulfonate A methane compound, a sulfonium sulfonate compound, a sulfonium sulfonate compound or the like Examples of such other acid generators are as follows: <Cityrite-imine compound> Examples of the sulfonimide compound include compounds of the following chemical formula (2 8 ): α

II 人 〇II people 〇

^ \ II^ \ II

^Ν-0-S-R25 (28) C 〇^Ν-0-S-R25 (28) C 〇

II 0 其中R25為單價有機基團,及R26為二價有機基團。 石黃酸亞胺化合物之明確例子包括·· N -(三氟曱磺醯氧)琥珀醯亞胺、 N -(三敗曱石黃酷氧)酿醯亞胺、 N -(三氟曱磺醯氧)二苯基順丁烯二醯亞胺、II 0 wherein R 25 is a monovalent organic group, and R 26 is a divalent organic group. Clear examples of the retinoid compound include N-(trifluorosulfonium oxysulfonate) amber quinone imine, N-(three-defected scutellite), yttrium imine, N-(trifluorosulfonate) Oxygen) diphenyl maleimide,

N-(三氟曱磺醯氧)雙環[2. 2.1]庚-5 -烯-2, 3 -二羧醯亞 胺、 N-(三氟曱磺醯氧)-7 - vf雙環[2. 2. 1 ]庚-5 -烯-2, 3 -二羧醯 亞胺、 N-(三氟曱磺醯氧)雙環[2· 2· 1 ]庚-5, 6 -氧-2, 3 -二羧醯亞 胺、N-(Trifluorosulfonium sulfonium oxy)bicyclo[2. 2.1]hept-5-ene-2,3-dicarboxyarsenine, N-(trifluorosulfonium oxy)-7-vf bicyclo [2. 2. 1 ]hept-5-ene-2,3-dicarboxyarsenine, N-(trifluorosulfonium oxy)bicyclo[2·2·1]hept-5,6-oxo-2, 3 - Dicarboxylated imine,

C:\2D-CODE\91-09\91114303.ptd 第87頁 1304060 五、發明說明(83) N -(三氟甲磺醯氧)萘醯亞胺、 N - ( 1 0 -掉腦續酿氧)破ίό酿亞胺、 Ν -( 1 0 -掉腦續酸氧)S大酷亞胺、 Ν -( 1 0 -樟腦磺醯氧)二苯基順丁烯二醯亞胺、 Ν-( 1 0 -樟腦磺醯氧)雙環[2· 2· 1 ]庚-5 -烯-2, 3 -二羧醯亞 胺、 Ν -(10 -掉腦石黃酸氧)-7-,雙環[2·2· 1]庚-5-稀- 2,3 -二魏 醯亞胺、 Ν-( 10 -樟腦磺醯氧)雙環[2. 2· 1 ]庚-5, 6 -氧-2, 3 -二羧醯亞 胺 :ίό 氧琥 醯I) 磺氧 石篮 甾酉 月黃 棒叾 Τ辛 10正 胺 亞 醯 萘 胺 亞 醯 一庚 稀]J 、丁 1 安貭 2 月 刀 亞基2 [f 醯苯環-Ϊ? 酞二雙-7 λ—y λ—y \»y \\y 氧氧氧氧 醯醯醯醯 辛辛辛辛 正正正正 環 雙 I 烯 N 3 J I 安 2 5 I I 1 亞烯庚 贫皿 _ ^. -) _- 胺 亞 $ S 緩 %3/ 亞 醯 羧 環 雙 氧 醯 磺 辛 正 庚 氧 亞 醯 羧 胺 、亞 胺醯 亞珀 醯琥 萘I) }氧 氧酿 醯磺 磺苯 辛甲 正對 安貭 2 月 刀 . 亞基[2 醯苯環 酞二雙 \)y \)/ 氧氧氧 夜皿在皿在皿 酉酉酉 續績續 4r^r *^ 甲甲曱 對對對 烯 庚 安 2 月 j 亞烯 ^皿 _ @ 13 亞 羧 C:\2D-CODH\91-09\91114303.ptd 第88頁 1304060 五、發明說明(84) 胺、 N-(對甲苯磺醯氧)-7 - ·ρ|雙環[2· 2· 1 ]庚-5 -烯-2, 3 -二羧醯 亞胺、 N-(對曱苯磺醯氧)雙環[2. 2. 1 ]庚-5, 6 -氧-2, 3 -二羧醯亞 胺、 N -(對甲苯磺醯氧)萘醯亞胺、 N -( 2 -三氟甲苯磺醯氧)琥珀醯亞胺、 N - ( 2 -三氟曱苯磺醯氧)酞醯亞胺、 N - ( 2 -三氟曱苯磺醯氧)二苯基順丁烯二醯亞胺、 N-(2 -三氣甲苯石黃酿氧)雙環[2.2.1]庚-5 -稀-2,3 -二魏酿 亞胺、 N-(2 -三氟曱苯磺醯氧)-7-pf雙環[2· 2. 1 ]庚-5 -烯-2, 3-二 羧醯亞胺、 N-(2 -三氟甲苯磺醯氧)雙環[2. 2. 1 ]庚-5, 6 -氧-2, 3 -二羧 醯亞胺、 N-( 2 -三氟曱苯磺醯氧)萘醯亞胺、 N - ( 4 -三氟曱苯磺醯氧)琥珀醯亞胺、 N - ( 4 -三氟曱苯磺醯氧)酞醯亞胺、 N - (4 -三氟甲苯磺醯氧)二苯基順丁烯二醯亞胺、 N -(4-三氟曱苯磺醯氧)雙環[2·2· 1]庚-5 -烯-2, 3 -二羧醯 亞胺、 N-( 4-三氟曱苯磺醯氧)-7- 雙環[2· 2· 1 ]庚-5 -烯-2, 3 -二 羧醯亞胺、 N-( 4-三氟甲苯磺醯氧)雙環[2· 2. 1 ]庚-5, 6 -氧-2, 3 -二羧C:\2D-CODE\91-09\91114303.ptd Page 87 1304060 V. INSTRUCTIONS (83) N-(Trifluoromethanesulfonyloxy)naphthoquinone imine, N - ( 1 0 - off-brain Oxygen) ό ό 亚 亚 亚 亚 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (1 0 - camphor sulfonium oxy) bicyclo [2· 2· 1 ]hept-5-ene-2,3-dicarboxyarmine imine, Ν-(10-offbrain acid oxygen)-7-, double ring [2·2·1]hept-5-rare-2,3-dipropionimine, Ν-(10-camphorsulfonyloxy)bicyclo[2. 2·1 ]hept-5,6-oxo-2, 3 - Dicarboxy quinone imine: ό 氧 氧 ) ) ) ) ) ) ) ) ) ) ) ) ) 10 10 10 10 10 10 10 10 正 正 正 正 正 正 正 正 正 正 正 正 正 2 2 2 2 2 2 2 2 [f 醯 环 Ϊ Ϊ 酞 酞 双 bis -7 λ y λ y y y y y y y y y y y y y y y y y y y y y y y y y 1 Alkenylene poor dish _ ^. -) _- amine sub-S S slow %3 / yttrium carboxy ring dioxin sulfonate n-heptyloxy hydrazine carboxamide, imine 醯 醯 醯 萘 naphthalene I) } Oxygen Sulphur sulfonate February knife. Yaki [2 醯 酞 酞 酞 双 ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) 4 4 4 4 4 4 4 4 4月j 亚烯^皿_ @13 亚carboxy C:\2D-CODH\91-09\91114303.ptd Page 88 1304060 V. Description of invention (84) Amine, N-(p-toluenesulfonyloxy)-7 - ·ρ|bicyclo[2·2·1]hept-5-ene-2,3-dicarboxyarsenine, N-(p-phenylenesulfonyloxy)bicyclo[2.2.1]hept-5, 6 - Oxygen-2,3-dicarboxylimine, N-(p-toluenesulfonyloxy)naphthylimine, N-(2-trifluorotoluenesulfonyloxy)arene, N-(2-three Fluoroquinone sulfonium oxy) quinone imine, N - ( 2 -trifluorobenzene sulfonium oxy) diphenyl maleimide, N-(2-three gas toluene yellow oxygen) double ring [2.2.1] G-5 - dilute-2,3 - diweilanimine, N-(2-trifluorosulfonylsulfonyloxy)-7-pfbicyclo[2·2.1]hept-5- Aceene-2,3-dicarboxylimine imine, N-(2-trifluorotoluenesulfonyloxy)bicyclo[2.2.1]hept-5,6-oxo-2,3-dicarboxyarmine, N-(2-trifluorobenzenesulfonyloxy)naphthylimine, N-(4-trifluorosulfonium oxysulfonate) amber quinone imine, N- ( 4-trifluorobenzenesulfonyloxy) quinone imine, N-(4-trifluorotoluenesulfonyloxy)diphenylbutyleneimine, N-(4-trifluorosulfonium sulfonate Bicyclo[2·2·1]hept-5-ene-2,3-dicarboxyindoleimine, N-(4-trifluorosulfonylsulfonyloxy)-7-bicyclo[2·2·1]g -5-ene-2,3-dicarboxyarsenine, N-(4-trifluorotoluenesulfonyloxy)bicyclo[2·2.1]hept-5,6-oxo-2,3-dicarboxylate

C:\2D-CODE\91-09\91114303.ptd 第89頁 1304060 五、發明說明(85) 醯亞胺、 N - ( 4 -三氟曱苯磺醯氧)萘醯亞胺、 N -(全氣苯續S篮氧)ί虎J0酿亞胺、 Ν -(全氟苯續酷氧)酜醯亞胺、 Ν -(全氟苯磺醯氧)二苯基順丁烯二醯亞胺、 Ν-(全氟苯磺醯氧)雙環[2.2.1]庚-5 -烯-2, 3 -二羧醯亞 胺、 Ν-(全氟苯磺醯氧)-7-巧雙環[2· 2. 1 ]庚-5 -烯-2, 3 -二羧醯 亞胺、 N-(全氟苯磺醯氧)雙環[2.2.1]庚-5, 6 -氧-2, 3 -二羧醯亞 胺、 N -(全鉱苯續醯氧)萘酸亞胺、 N - (1 -萘磺醯氧)琥珀醯亞胺、 N - (1 -萘磺醯氧)酞醯亞胺、 N - (1 -萘磺醯氧)二苯基順丁烯二醯亞胺、 1^-(1-萘磺醯氧)雙環[2.2.1]庚-5-烯-2,3-二羧醯亞胺、 Ν-(1-萘石黃驢氧)-7 -^雙環[2·2· 1]庚-5-稀-2,3 -二叛酸亞 胺、 N-(l -萘磺醯氧)雙環[2. 2· 1 ]庚-5, 6 -氧-2, 3 -二羧醯亞 胺、 Ν-(1-萘磺醯氧)萘醯亞胺、 Ν -(苯磺醯氧)琥珀醯亞胺、 Ν -(苯磺醯氧)酞醯亞胺、 Ν -(苯磺醯氧)二苯基順丁烯二醯亞胺、C:\2D-CODE\91-09\91114303.ptd Page 89 1304060 V. INSTRUCTIONS (85) Yttrium, N-(4-trifluorosulfonyloxy)naphthylimine, N-( All gas benzene continued S basket oxygen) 虎 Tiger J0 brewed imine, Ν - (perfluorobenzene continued oxygen) quinone imine, Ν - (perfluorobenzene sulfonate) diphenyl maleimide , Ν-(perfluorobenzenesulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarsenine, Ν-(perfluorobenzenesulfonyloxy)-7-qiaobicyclo[2 · 2. 1 ]hept-5-ene-2,3-dicarboximine, N-(perfluorobenzenesulfonyloxy)bicyclo[2.2.1]hept-5,6-oxo-2, 3 -di Carboxylium imine, N-(perphenylene hydrazine) naphthyl imide, N-(1-naphthosulfonyloxy) amber quinone imine, N-(1-naphthosulfonyloxy) quinone imine, N - (1-naphthalene sulfonium oxy) diphenyl maleimide, 1^-(1-naphthalenesulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyl Yttrium imine, Ν-(1-naphthylxanthineoxy)-7-^bicyclo[2·2·1]hept-5-lean-2,3-di-resolic acid imine, N-(l-naphthalene sulfonate Oxide)bicyclo[2. 2·1 ]hept-5,6-oxo-2,3-dicarboxyarsenine, Ν-(1-naphthalenesulfonyloxy)naphthoquinone imine, Ν-(phenylsulfonate) Oxygen) amber Amine, Ν - (Benzene Sulfonic oxy) phthalocyanine (PEI), Ν - (Benzene Sulfonic oxygen) diphenyl maleic (PEI)

C:\2D-CODE\91-09\91114303.ptd 第90頁 1304060 五、發明說明(86) N -(苯石黃酿氧)雙環[2·2· 1]庚-5 -稀_2,3_二魏S區亞胺、 Ν-(苯磺醯氧)-7 -唁雙環[2· 2· 1 ]庚-5-烯-2, 3 -二羧醯亞 胺、 Ν-(苯磺醯氧)雙環[2· 2. 1 ]庚-5, 6 -氧-2, 3 -二羧醯亞胺、 Ν -(苯磺醯氧)萘醯亞胺、 Ν-{ (5-曱基-5-曱氧羰基雙環[2· 2. 1 ]庚-2 -基)磺醯氧}琥 ί白醯亞胺、 Ν-{ (5-甲基-5-甲氧羰基雙環[2· 2· 1 ]庚一2-基)石黃醯氧}雙 環[2· 2. 1]庚-5 -稀-2,3 -二魏酿亞胺等等。 &lt;名義鹽化合物〉 關於鹽化合物之例子,可舉出錤鹽、屋I鹽(包括噻吩 鹽)、鱗鹽、重氮純鹽、錢鹽、及σ比键鹽。 錄1鹽之明確例子包括: 三氟曱磺酸雙(4-第三丁苯基)錤、 芘磺酸雙(4-第三丁苯基)錤、 正十二基苯磺酸雙(4-第三丁苯基)錤、 對甲苯磺酸雙(4-第三丁苯基)鎭、 苯磺酸雙(4-第三丁苯基)錤、 10-樟腦磺酸雙(4-第三丁苯基)錤、 正辛磺酸雙(4-第三丁苯基)鎭、 2-三氟甲基苯磺酸雙(4-第三丁苯基)鎭、 4-三氟曱基苯磺酸雙(4-第三丁苯基)錤、 全氟苯磺酸雙(4-第三丁苯基)鎭、 三氟曱石黃酸二苯錤、C:\2D-CODE\91-09\91114303.ptd Page 90 1304060 V. INSTRUCTIONS (86) N-(Phenyl Yellow Oxygen) Bicyclo[2·2·1]hept-5-rare_2, 3_II, S-Imine, Ν-(phenylsulfonyloxy)-7-indole bicyclo[2·2·1]hept-5-ene-2,3-dicarboxyarmine, Ν-(benzenesulfonate醯oxy)bicyclo[2·2.1]hept-5,6-oxo-2,3-dicarboxyarminemine, Ν-(phenylsulfonyloxy)naphthylimine, Ν-{ (5-fluorenyl) -5-曱Oxycarbonylbicyclo[2·2.1]hept-2-yl)sulfonyloxy}succinimide, Ν-{(5-methyl-5-methoxycarbonylbicyclo[2·2 · 1 ] Geng- 2 - base) sulphate oxime} bicyclo [2 · 2. 1] hept-5 - dilute-2,3 - diweilanimide and the like. &lt;Nominal salt compound> Examples of the salt compound include an onium salt, a house I salt (including a thiophene salt), a scale salt, a diazo pure salt, a money salt, and a σ ratio bond salt. Clear examples of the salt 1 include: bis(4-tert-butylphenyl)phosphonium trifluorosulfonate, bis(4-tert-butylphenyl)phosphonium sulfonate, and bis-dodecylbenzenesulfonic acid bis (4) -T-butylphenyl)anthracene, bis(4-t-butylphenyl)phosphonium p-toluenesulfonate, bis(4-tert-butylphenyl)phosphonium benzenesulfonate, 10-camphorsulfonic acid bis (4- Tributylphenyl)anthracene, bis(4-tert-butylphenyl)phosphonium n-octylsulfonate, bis(4-t-butylphenyl)phosphonium 2-trifluoromethylbenzenesulfonate, 4-trifluoromethylsulfonyl Bis(4-tert-butylphenyl)phosphonium benzenesulfonate, bis(4-t-butylphenyl)phosphonium perfluorobenzenesulfonate, diphenylphosphonium trifluoride,

C: \2D-mDE\91 -09\91114303 .ptd 第91頁 1304060 五、發明說明(87) 芘磺酸二苯錤、 正十二基苯續酸二苯錢、 對曱苯磺酸二苯錤、 苯磺酸二苯鏘、 1 0 -樟腦續酸二苯鎖、 正辛磺酸二苯錤、 2-三氟曱基苯磺酸二苯錤、 4 -三氟甲基苯磺酸二苯鏘、 全氟苯磺酸二苯鏘、 三氟曱磺酸二(對甲苯基)錤、 芘磺酸二(對曱苯基)鎖、 正十二基苯績酸二(對曱苯基)鎖、 對曱苯磺酸二(對曱苯基)錤、 苯磺酸二(對曱苯基)鎭、 1 0 -樟腦磺酸二(對甲苯基)錤、 正辛磺酸二(對甲苯基)錤、 2-三氟曱基苯磺酸二(對曱苯基)錤、 4 -三氟曱基苯磺酸二(對曱苯基)鏘、 全氟苯磺酸二(對曱苯基)錤、 三氟甲磺酸二(3, 4 -二曱基苯基)鐫、 芘磺酸二(3, 4-二曱基苯基)鎭、 正十二基苯磺酸二(3, 4 -二曱基苯基)錤、 對曱苯磺酸二(3, 4 -二曱基苯基)鎭、 苯磺酸二(3, 4 -二甲基苯基)錤、C: \2D-mDE\91 -09\91114303 .ptd Page 91 1304060 V. Description of invention (87) Diphenyl sulfonium sulfonate, diphenylene phthalate, diphenyl benzene sulfonate Bismuth, diphenyl sulfonate, 1 0 - camphoric acid diphenyl lock, n-octyl sulfonate diphenyl hydrazine, 2-trifluorodecyl benzene sulfonic acid diphenyl hydrazine, 4 - trifluoromethyl benzene sulfonic acid Benzoquinone, diphenyl sulfonium perfluorobenzenesulfonate, di(p-tolyl) fluorene trifluorosulfonate, bis(p-phenylene) sulfonate, n-dodecyl benzoic acid ), lock, p-toluenesulfonic acid di(p-phenylene) fluorene, bis(p-phenylphenyl) sulfonate, 10 -camphorsulfonic acid bis(p-tolyl) fluorene, n-octane sulfonate Tolyl) ruthenium, di(p-phenylphenyl)phosphonium 2-trifluorodecylbenzenesulfonate, di(p-phenylphenyl)phosphonium 4-trifluorodecylbenzenesulfonate, di-p-perfluorobenzenesulfonate Phenyl) ruthenium, bis(3,4-didecylphenyl)phosphonium trifluoromethanesulfonate, bis(3,4-dimercaptophenyl)phosphonium sulfonate, n-dodecylbenzenesulfonic acid 3,4-dimercaptophenyl)anthracene, p-tert-benzenesulfonate bis(3,4-dimercaptophenyl)anthracene, benzenesulfonic acid bis(3, 4-dimethylphenyl) hydrazine,

C:\2D-CODE\91-09\91114303.ptd 第92頁 1304060_ 五、發明說明(88) 10-樟腦磺酸二(3, 4 -二曱基苯基)鎭、 正辛磺酸二(3, 4 -二曱基苯基)鐫、 2-三氟曱基苯磺酸二(3, 4 -二曱基苯基)鎭、 4_三氟曱基苯磺酸二(3, 4 -二甲基苯基)鎖、 全氟苯磺酸二(3, 4 -二曱基苯基)錤、 三氟曱磺酸4 -硝苯基•苯基銷、 芘磺酸4_硝苯基•苯基鎭、 正十二基苯磺酸4-硝苯基•苯基鎭、 對曱苯績酸4 -硝苯基•苯基錤、 苯磺酸4-硝苯基•苯基鎖、 1 0 -樟腦磺酸4 -硝苯基•苯基鎖、 正辛續酸4 -石肖苯基•苯基錤、 2-三氟曱基苯磺酸4 -硝苯基•苯基鏘、 4-三氟曱基苯磺酸4 -硝苯基•苯基鏘、 全氟苯磺酸4-硝苯基•苯基錤、 三氟曱磺酸二(3-硝苯基)鏘、 芘磺酸二(3-硝苯基)錤、 正十二基苯磺酸二(3 -硝苯基)鐫、 對曱苯磺酸二(3-硝苯基)鎭、 苯續酸二(3 -确苯基)錤、 1 〇 -樟腦磺酸二(3 -硝苯基)錤、 正辛績酸二(3 -梢苯基)錤、 2-三氟甲基苯磺酸二(3 -硝苯基)錤、 4-三氟曱基苯磺酸二(3 -硝苯基)鎭、C:\2D-CODE\91-09\91114303.ptd Page 92 1304060_ V. INSTRUCTIONS (88) 10-camphorsulfonic acid bis(3,4-dimercaptophenyl)anthracene, n-octanesulfonic acid II 3,4-dimercaptophenyl)anthracene, bis(3,4-didecylphenyl)anthracene, 4-trifluorodecylbenzenesulfonic acid bis(3,4- Dimethylphenyl)-locked, bis(3,4-dimercaptophenyl)fluorene perfluorobenzenesulfonate, 4-nitrophenylphenyl ester of trifluorosulfonium sulfonate, 4-nitrophenyl sulfonate • Phenyl hydrazine, n-dodecyl phenyl sulfonate, 4-nitrophenyl phenyl hydrazine, 4-phenylphenyl phenyl hydrazine, 4-nitrophenyl phenyl benzene sulfonate 1 0 - camphorsulfonic acid 4 - nitrophenyl phenyl lock, n-octyl acid 4 - stone phenyl phenyl fluorene, 2-trifluorodecyl benzene sulfonic acid 4 - nitrophenyl phenyl hydrazine, 4-trifluorodecylbenzenesulfonic acid 4-nitrophenyl phenyl sulfonium, perfluorobenzenesulfonic acid 4-nitrophenyl phenyl hydrazine, trifluorosulfonium sulfonic acid bis(3-nitrophenyl) fluorene, hydrazine Di(3-nitrophenyl)phosphonium sulfonate, bis(3-nitrophenyl)phosphonium n-dodecylbenzenesulfonate, bis(3-nitrophenyl)phosphonium sulfonate, benzoic acid di(3) - indeed phenyl) 錤, 1 〇-樟Cerebral sulfonic acid bis(3-nitrophenyl)anthracene, n-octyl acid bis(3-phenylene) fluorene, 2-trifluoromethylbenzenesulfonic acid bis(3-nitrophenyl)phosphonium, 4-trifluoro Di(3-nitrophenyl)fluorene decylbenzenesulfonate,

C:\2D-mDE\91-09\91114303.ptd 第93頁 1304060_ 五、發明說明(89) 全氟苯磺酸二(3 -硝苯基)鎖、 三氟曱磺酸4-曱氧苯基•苯基鎭、 芘磺酸4-曱氧苯基•苯基錤、 正十二基苯磺酸4-曱氧苯基•苯基錤、 對曱苯磺酸4-甲氧苯基•苯基錤、 苯磺酸4-甲氧苯基•苯基錤、 10-樟腦磺酸4-甲氧苯基•苯基鏘、 正辛磺酸4-甲氧苯基•苯基錤、 2-三氟曱基苯磺酸4-甲氧苯基•苯基鎭、 4-三氟曱基苯磺酸4-曱氧苯基•苯基錤、 全氟苯磺酸4-甲氧苯基•苯基錤、 三氟曱磺酸二(4-氯苯基)鎖、 芘磺酸二(4-氯苯基)錤、 正十二基苯績酸二(4-氣苯基)鎖、 對曱苯磺酸二(4-氯苯基)錤、 苯確酸二(4-氯苯基)錤、 10-樟腦磺酸二(4-氯苯基)銷、 正辛續酸二(4-氣苯基)鎖、 2-三氟曱基苯磺酸二(4-氯苯基)錤、 4-三氟曱基苯磺酸二(4-氣苯基)錤、 全氟苯磺酸二(4-氣苯基)錤、 三氟甲石黃酸二(4_三氟曱基苯基)鎖、 芘績酸二(4 -三氟甲基苯基)鎖、 正十二基苯磺酸二(4 -三氟曱基苯基)錤、C:\2D-mDE\91-09\91114303.ptd Page 93 1304060_ V. INSTRUCTIONS (89) Perfluorobenzenesulfonic acid bis(3-nitrophenyl)-locked, trifluoroanthracene 4-oxobenzene Phenyl hydrazine, hydrazine sulfonate 4-decyloxyphenyl phenyl hydrazine, n-dodecyl benzene sulfonic acid 4-nonyloxyphenyl phenyl fluorene, p-toluene sulfonic acid 4-methoxyphenyl Phenyl hydrazine, 4-methoxyphenyl phenyl sulfonate, 4-methoxyphenyl phenyl hydrazine, 4-methoxyphenyl phenyl hydrazine, 2 4-trimethoxyphenylsulfonic acid 4-methoxyphenyl•phenylhydrazine, 4-trifluorodecylbenzenesulfonic acid 4-nonyloxyphenyl•phenylhydrazine, perfluorobenzenesulfonic acid 4-methoxyphenyl • Phenylhydrazine, bis(4-chlorophenyl) sulfonate, bis(4-chlorophenyl)phosphonium sulfonate, n-dodecyl benzoic acid di(4-phenylphenyl) lock, P-(4-chlorophenyl)phosphonium benzenesulfonate, bis(4-chlorophenyl)phosphonium benzoate, bis(4-chlorophenyl) pin of 10-camphorsulfonate, n-octyl acid (4) - gas phenyl) lock, bis(4-chlorophenyl)phosphonium 2-trifluorodecylbenzenesulfonate, bis(4-phenylphenyl)phosphonium 4-trifluorodecylbenzenesulfonate, perfluorobenzenesulfonic acid Bis(4-phenylphenyl)anthracene, Bis(4-trifluorodecylphenyl) fluoromethionate, bis(4-trifluoromethylphenyl)-locked bis(4-trifluoromethylphenyl) n-dodecylbenzenesulfonate Base)

C:\2D-CODE\91-09\91114303.ptd 第94頁 1304060_ 五、發明說明(90) 對曱苯磺酸二(4 -三氟曱基苯基)錤、 苯磺酸二(4 -三氟曱基苯基)錤、 10 -樟腦磺酸二(4_三氟曱基苯基)錤、 正辛磺酸二(4 -三氟曱基苯基)鎭、 2 -三氟曱基苯磺酸二(4 -三氟曱基苯基)鎖、 4 -三氟曱基苯磺酸二(4 -三氟甲基苯基)鎖、 全氟苯磺酸二(4 -三氟曱基苯基)鎭、 三氟曱磺酸二(1-萘基)錤、 三氟甲磺酸二(1-萘基)錤、 九氟正丁磺酸二(1-萘基)錤、 全氧正辛續酸二(1-萘基)鎖、 芘磺酸二(1-萘基)鎭、 正十二基苯磺酸二(1-萘基)鏘、 對曱苯磺酸二(1 -萘基)錤、 苯績酸二(1-秦基)鎖、 10-樟腦磺酸二(1-萘基)錤、 正辛磺酸二(1-萘基)錤、 2 -三氟曱基苯磺酸二(1-萘基)錤、 4-三氟曱基苯磺酸二(1-萘基)錤、 全氟苯磺酸二(1-萘基)鍈、 三氟曱磺酸伸聯苯基錤、 芘磺酸伸聯苯基錤、 正十二基苯確酸伸聯苯基鎖、 對曱苯績酸伸聯苯基鎖、C:\2D-CODE\91-09\91114303.ptd Page 94 1304060_ V. INSTRUCTIONS (90) P-(4-trifluoromethylphenyl) sulfonium sulfonate and bis(4-phenylene sulfonate) Trifluoromethylphenyl)anthracene, 10-camphorsulfonic acid bis(4-trifluorodecylphenyl)anthracene, n-octylsulfonic acid bis(4-trifluorodecylphenyl)anthracene, 2-trifluorodecyl Bis(4-trifluorodecylphenyl) benzenesulfonate, bis(4-trifluoromethylphenyl) 4-trifluorodecylbenzenesulfonate, di(4-trifluoroindole) perfluorobenzenesulfonate Phenyl) ruthenium, di(1-naphthyl)phosphonium trifluorosulfonate, bis(1-naphthyl)phosphonium triflate, bis(1-naphthyl)phosphonium nonafluorobutanesulfonate, Oxygen n-octanoic acid di(1-naphthyl)-lock, bis(1-naphthyl)anthracene sulfonate, di(1-naphthyl)anthracene n-dodecylbenzenesulfonate, p-toluenesulfonic acid di(1) -naphthyl)anthracene, benzoic acid di(1-methyl)-lock, 10-camphorsulfonic acid di(1-naphthyl)anthracene, n-octylsulfonic acid di(1-naphthyl)anthracene, 2-trifluoroanthracene Di(1-naphthyl)anthracene benzenesulfonate, di(1-naphthyl)anthracene 4-trifluorodecylbenzenesulfonate, di(1-naphthyl)phosphonium perfluorobenzenesulfonate, trifluorosulfonium sulfonic acid Phenylhydrazine Biphenyl-Ji extending pyrene sulfonate, n-dodecyl benzene correct lock acid stretch biphenyl, benzene Yue performance of biphenyl acid stretch lock,

C:\2D-CODE\91-09\91114303.ptd 第95頁 1304060 五、發明說明(91) 苯磺酸伸聯苯基錤、 1 0 -樟腦磺酸伸聯苯基鎭、 正辛磺酸伸聯苯基錤、 2 -三氟曱基苯磺酸伸聯苯基鐫、 4-三氟曱基苯磺酸伸聯苯基鎭、 全氟苯磺酸伸聯苯基鎭、 三氟曱磺酸2 -氯伸聯苯基錤、 芘磺酸2 -氯伸聯苯基鏘、 正十二基苯續酸2 -氯伸聯苯基鎖、 對曱苯磺酸2-氯伸聯苯基鎭、 苯磺酸2 -氯伸聯苯基鏘、 1 0 -樟腦磺酸2 -氣伸聯苯基錤、 正辛磺酸2-氯伸聯苯基錤、 2-三氟曱基苯磺酸2-氣伸聯苯基鐫、 4-三氟甲基苯磺酸2-氯伸聯苯基鐫、 全氟苯磺酸2_氯伸聯苯基錤、 三II曱石黃酸三苯如'U、 芘磺酸三苯f允、 正十二基苯磺酸三苯、 對甲苯績酸二苯右“、 苯磺酸三苯隹£、 1 0 -樟腦磺酸三苯、 正辛績酸三苯、 2-三氟曱基苯磺酸三苯i虎、C:\2D-CODE\91-09\91114303.ptd Page 95 1304060 V. INSTRUCTIONS (91) Benzenesulfonic acid extended biphenyl hydrazine, 10 0-camphorsulfonic acid extended biphenyl hydrazine, n-octane sulfonic acid Diphenyl fluorene, 2-trifluorodecylbenzenesulfonic acid, phenylhydrazine, 4-trifluorodecylbenzenesulfonic acid, phenylhydrazine, perfluorobenzenesulfonic acid, phenylhydrazine, trifluoroanthracene Sulfonic acid 2-chloro-terphenyl hydrazine, sulfonic acid 2-chloro-terphenyl fluorene, n-dodecyl benzoic acid 2-chloro-extension phenyl lock, p-toluenesulfonic acid 2-chloro-stranded biphenyl Base, 2-chlorobenzene phenyl sulfonate, 1 0 - camphorsulfonic acid 2 - gas extended biphenyl hydrazine, n-octyl sulfonate 2-chloro phenyl hydrazine, 2-trifluorodecyl benzene Sulfonic acid 2-gas extension biphenyl hydrazine, 4-trifluoromethylbenzenesulfonic acid 2-chloro-terphenyl fluorene, perfluorobenzenesulfonic acid 2_chloro-terphenyl fluorene, tri-II fluorite Benzene such as 'U, sulfonate triphenyl f, n-dodecylbenzenesulfonic acid triphenyl, p-toluene acid diphenyl right", benzenesulfonic acid triphenyl fluorene, 1 0 - camphorsulfonic acid triphenyl, positive Succinic acid triphenyl, 2-trifluorodecylbenzenesulfonic acid triphenyl i tiger,

C:\2D-CODE\91-09\9m4303.ptd 第96頁 1304060 五、發明說明(92) 4 -三氟曱基苯磺酸三苯、 六氟銻酸三苯€钇、 萘磺酸三苯反t、 全氟苯磺酸三苯€釔、 三氟曱磺酸4-第三丁苯基•二苯產R、 芘磺酸4-第三丁苯基•二苯f恐、 正十二基苯磺酸4-第三丁苯基•二苯fl、 對甲苯磺酸4-第三丁苯基•二苯猛、 苯磺酸4-第三丁笨基•二苯裔ΐ、 10-樟腦磺酸4-第三丁苯基•二苯#1、 正辛磺酸4_第三丁苯基•二苯ΐ泣、 2-三氟曱基苯磺酸4-第三丁苯基•二苯爹心、 4 -三氟曱基苯磺酸4-第三丁苯基•二苯#☆、 全氟苯磺酸4-第三丁苯基•二苯、 三氟曱磺酸4-第三丁氧苯基·二苯書t、 芘磺酸4-第三丁氧苯基•二苯多氣、 正十二基苯磺酸4-第三丁氧苯基•二苯疏、 對甲苯磺酸4-第三丁氧苯基•二苯售灸、 苯磺酸4-第三丁氧苯基•二苯H、 10-樟腦磺酸4-第三丁氧苯基•二苯切^、 正辛磺酸4-第三丁氧苯基·二苯令孤、 2-三氟曱基苯磺酸4-第三丁氧苯基•二苯夸仏、 4-三氟曱基苯磺酸4-第三丁氧苯基•二苯fe、 全氟苯磺酸4-第三丁氧苯基•二苯售t、C:\2D-CODE\91-09\9m4303.ptd Page 96 1304060 V. Description of invention (92) 4-trifluorodecylbenzenesulfonic acid triphenyl, hexafluoroantimonic acid triphenylene, naphthalenesulfonic acid Benzene anti-t, perfluorobenzenesulfonic acid triphenyl hydrazine, trifluorosulfonium sulfonate 4-tert-butylphenyl diphenylate R, sulfonic acid 4-tert-butylphenyl diphenyl f fear, positive ten 4-tert-phenylenesulfonic acid 4-tert-butylphenyl diphenyl fluoride, p-toluenesulfonic acid 4-tert-butylphenyl diphenyl phthalate, 4-phenylbutyric acid • diphenyl sulfonium sulfonate, 10 - camphorsulfonic acid 4-t-butylphenyl diphenyl #1, n-octanesulfonic acid 4_t-butylphenyl diphenyl weeping, 2-trifluorodecylbenzenesulfonic acid 4-tert-butylphenyl • Diphenyl fluorene, 4-trifluorodecylbenzenesulfonic acid 4-tert-butylphenyl diphenyl #☆, perfluorobenzenesulfonic acid 4-tert-butylphenyl diphenyl, trifluoromethanesulfonic acid 4 -T-butoxyphenyl·diphenyl book t, sulfonate 4-tert-butoxyphenyl diphenyl gas, n-dodecylbenzenesulfonate 4-tert-butoxyphenyl diphenyl spar, For the sale of p-toluenesulfonic acid 4-tert-butoxyphenyl diphenyl, benzenesulfonic acid 4-tert-butoxyphenyl diphenyl H, 10-camphorsulfonate 4-t-butoxyphenyl diphenyl Cut ^, n-octanesulfonic acid 4- Tributoxyphenyl diphenyl phthalate, 2-trifluorodecylbenzenesulfonic acid 4-tert-butoxyphenyl dibenzofuran, 4-trifluorodecylbenzenesulfonic acid 4-tert-butoxybenzene Base diphenyl fe, perfluorobenzenesulfonic acid 4-th-butoxyphenyl diphenyl is sold,

C:\2D-CODE\91-09\91114303.ptd 第97頁 1304060 五、發明說明(93) 三氟曱磺酸4-羥苯基•二苯It、 績酸4 -經苯基•二苯隹反、 正十二基苯磺酸4-羥苯基•二苯€釔、 對曱苯磺酸4-羥苯基•二苯、 苯磺酸4 -羥苯基•二苯€1、 10 -樟腦磺酸4 -羥苯基•二苯銳、 正辛磺酸4 -羥苯基•二苯名1、 2 -三氣曱基苯石黃酸4 -經苯基•二苯含;、 4-三氟曱基苯磺酸4-羥苯基•二苯.1、C:\2D-CODE\91-09\91114303.ptd Page 97 1304060 V. INSTRUCTIONS (93) 4-Hydroxyphenyl•diphenyl Itine, tribasic acid 4-Phenyl-2-diphenyl隹, n-dodecylbenzenesulfonic acid 4-hydroxyphenyl • diphenyl hydrazine, p-toluenesulfonic acid 4-hydroxyphenyl • diphenyl, benzene sulfonic acid 4-hydroxyphenyl • diphenyl € 1, 10 - camphorsulfonic acid 4-hydroxyphenyl diphenyl sharp, n-octylsulfonic acid 4-hydroxyphenyl diphenyl, 1, 2-trisylbenphate, 4-phenyl-diphenyl; 4-trifluorophenylbenzenesulfonic acid 4-hydroxyphenyl•diphenyl.1.

全氟苯磺酸4_羥苯基•二苯意❺、 三氟甲磺酸參(4_曱氧苯基)畫资、 祐磺酸參(4-曱氧苯基乳、 正十二基苯磺酸參(4-曱氧苯基)ft、 對甲苯磺酸參(4-曱氧苯基)|灸、 苯磺酸參(4-甲氧苯基)參灸、 1 0 -樟腦磺酸參(4 -曱氧苯基)畫1、 正辛磺酸參(4 -曱氧苯基)&lt;11、 2 -三.氟曱基苯磺酸參(4-曱氧苯基)餘、4-fluorophenyl sulfonate, diphenyl sulfonate, trifluoromethanesulfonic acid ginseng (4 曱 oxyphenyl), sulfonic acid sulfonate (4-oxophenyl phenyl emulsion, n-dodecyl) Benzene sulfonic acid ginseng (4-anthoxyphenyl) ft, p-toluenesulfonic acid ginseng (4-anthoxyphenyl) | moxibustion, benzene sulfonic acid ginseng (4-methoxyphenyl) moxibustion, 1 0 - camphor sulfonate Acid ginseng (4-oxophenyl) 1, octanoic acid sulfonate (4-oxophenyl) &lt;11, 2-tris-fluorononylbenzenesulfonic acid ginseng (4-anthoxyphenyl) ,

4-三氟曱基苯磺酸參(4-曱氧苯基)令1、 全氟苯磺酸參(4 -曱氧苯基)&lt;|泣、 三氟曱磺酸二(4-曱氧苯基)·對曱苯#1、 芘磺酸二(4-曱氧苯基)·對甲苯f恥、 正十二基苯石黃酸二(4-曱氧苯基)·對甲苯查、1、 對曱苯磺酸二(4-曱氧苯基)·對曱苯重备、4-trifluorodecylbenzenesulfonic acid ginseng (4-anthoxyphenyl) 1, perfluorobenzenesulfonic acid ginseng (4-oxophenyl) &lt;|cry, trifluorosulfonate bis(4-anthracene) Oxyphenyl)·p-phenylene #1, sulfonic acid bis(4-indolylphenyl)·p-toluene f, n-dodecyl benzoate, bis(4-indolylphenyl)·p-toluene , 1, p-toluenesulfonic acid bis(4-indolylphenyl)·p-benzene,

C:\2D-C0DE\91-09\91114303.ptd 第98頁 1304060 五、發明說明(94) 苯磺酸二(4-曱氧苯基)·對曱苯H、 1 0-樟腦磺酸二(4-曱氧苯基)·對曱苯歡、 正辛磺酸二(4-甲氧苯基)·對曱苯射c、 2-三氟甲基苯磺酸二(4-曱氧苯基)·對曱苯1兔、 4 -三氟曱基苯磺酸二(4-曱氧苯基)·對曱苯 全氟苯磺酸二(4-曱氧苯基)·對曱苯釕t、 三氟曱磺酸苯基•伸聯苯基ft、 芘磺酸苯基•伸聯苯基令兑、 正十二基苯磺酸苯基•伸聯苯基售长、 對甲苯磺酸苯基•伸聯苯基售仏、 苯磺酸苯基•伸聯苯基f R、 1 0 -樟腦磺酸苯基•伸聯苯基猛、 正辛磺酸苯基•伸聯苯基、 2-三氟曱基苯磺酸苯基•伸聯苯基、 4-三氟曱基苯磺酸苯基•伸聯苯基令t、 全氟苯磺酸苯基•伸聯苯基f從、 三氟曱磺酸(4 -苯硫苯基)·二苯書仏、 芘磺酸(4 -苯硫苯基)·二苯f:负、 正十二基苯磺酸(4-苯硫苯基)·二苯f^、 對曱苯續酸(4 -苯硫苯基)·二苯豸/U、 苯磺酸(4-苯硫苯基)·二苯參i、 10-樟腦磺酸(4-苯硫苯基)·二苯银、 正辛磺酸(4-苯硫苯基)·二苯会1、 2-三氟曱基苯磺酸(4-苯硫苯基)·二苯養兑、C:\2D-C0DE\91-09\91114303.ptd Page 98 1304060 V. INSTRUCTIONS (94) Di(4-anthoxyphenyl)benzenesulfonate·p-phenylene H, 1 0-camphorsulfonic acid (4-oxophenyl)·p-benzopyrene, n-octylsulfonic acid bis(4-methoxyphenyl)·p-benzoquinone c, 2-trifluoromethylbenzenesulfonic acid bis(4-indolylbenzene ))·p-Benzene 1 rabbit, 4-(4-pyridylphenyl)-p-phenylene perfluorobenzenesulfonic acid bis(4-indolylphenyl)-p-benzoquinone t, trifluorosulfonium sulfonate phenyl • biphenyl ft, hydrazine sulfonate phenyl • extended biphenyl phthalate, n-dodecyl benzene sulfonate phenyl • extended biphenyl sold, p-toluenesulfonic acid Phenyl • phenyl phenyl fluorene, phenyl benzene sulfonate • biphenyl phenyl f R, 1 0 - camphorsulfonyl phenyl • biphenyl phenyl, n-octyl sulfonate phenyl • biphenyl 2-trifluorodecylbenzenesulfonic acid phenyl • biphenyl, 4-trifluorodecylbenzenesulfonate phenyl • biphenyl phenyl t, perfluorobenzene sulfonate phenyl • biphenyl phenyl f , trifluorosulfonium sulfonic acid (4-phenylthiophenyl) diphenyl sulfonium, sulfonic acid (4-phenylthiophenyl) diphenyl f: negative, n-dodecylbenzenesulfonic acid (4-benzene sulfur Phenyl)· Benzene f^, p-benzoic acid (4-phenylthiophenyl)·diphenylhydrazine/U, benzenesulfonic acid (4-phenylthiophenyl)·diphenyl ginseng i, 10-camphorsulfonic acid (4-benzene) Thiophenyl)·diphenyl silver, n-octylsulfonic acid (4-phenylthiophenyl)·diphenyl, 1, 2-trifluorodecylbenzenesulfonic acid (4-phenylthiophenyl)·diphenyl,

C:\2D-OODE\91-O9\91114303.ptd 第99頁 1304060 五、發明說明(95) 4 -三氟曱基苯磺酸(4 -苯硫苯基)·二苯益t、 全氟苯續酸(4 -苯硫苯基)·二苯、 二(三氟曱磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(芘磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(正十二基苯磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(對曱苯磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(苯磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(10 -樟腦磺酸)4, 4’ -雙(二苯基二氳硫苯基)硫、 二(正辛磺酸)4, 4’ -雙(二苯基二氫硫苯基)硫、 二(2 -三氟甲苯磺酸)4, 4’ -雙(二苯基二氫硫苯基)硫、 二(4 -三氟曱苯磺酸)4,4 ’ -雙(二苯基二氫硫苯基)硫、 二(全氟苯磺酸)4, 4’-雙(二苯基二氫硫苯基)硫、 三氟曱磺酸1-苯基四氫噻吩每t、 三氟曱磺酸l-(4 -羥苯基)四氫噻吩_、 三氟曱磺酸1-(3, 5 -二曱基-4 -羥苯基)四氫噻吩鎘、 三氟曱磺酸1-(4 -正丁氧苯基)四氫噻吩痛、 三氟曱磺酸卜(4 -羥萘-1-基)四氫噻吩錄i、 三氟曱磺酸卜(4-曱氧萘-1-基)四氫噻吩·、 三氟曱磺酸卜(4-乙氧萘-1-基)四氫噻吩痛ί、 三氣曱續酸1-(4 -正丁氧萘-1_基)四氫嚷吩餘、 三氟甲石黃酸1 -(4-曱氧曱氧萘-1-基)四氫嚷吩糊、 三氟曱磺酸卜(4-乙氧曱氧萘-1-基)四氫噻吩痛、 三氟曱磺酸1 - [4-U-甲氧乙氧)萘-1-基]四氫噻吩讀、 三氟曱磺酸1-[4-(2-曱氧乙氧)萘-1-基]四氫噻吩韻、C:\2D-OODE\91-O9\91114303.ptd Page 99 1304060 V. INSTRUCTIONS (95) 4-Trifluorodecylbenzenesulfonic acid (4-phenylthiophenyl)·diphenylene t, perfluoro Benzoic acid (4-phenylthiophenyl) diphenyl, bis(trifluoromethanesulfonate) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide, di(anthracenesulfonic acid) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide, bis(n-dodecylbenzenesulfonic acid) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide, bis(p-toluenesulfonic acid) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide, bis(benzenesulfonic acid) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide, bis(10-camphorsulfonic acid) 4, 4'-bis(diphenyldisulfonylthio)sulfide, bis(n-octanoic acid) 4,4'-bis(diphenyldihydrothiophenyl)sulfide, bis(2-trifluoro) Toluenesulfonic acid) 4,4'-bis(diphenyldihydrothiophenyl)sulfide, bis(4-trifluoroindolenesulfonic acid) 4,4 '-bis(diphenyldihydrothiophenyl)sulfide , bis(perfluorobenzenesulfonic acid) 4,4'-bis(diphenyldihydrothiophenyl)sulfide, triphenylsulfonium sulfonate 1-phenyltetrahydrothiophene per t, trifluorosulfonium sulfonic acid l-( 4-hydroxyphenyl Tetrahydrothiophene-, tris(trimethylenesulfonate)-(3,5-dimercapto-4-hydroxyphenyl)tetrahydrothiophene cadmium, tris-sulfonium sulfonic acid 1-(4-n-butoxyphenyl)tetrahydrogen Thiophene, trifluorosulfonium sulfonate (4-hydroxynaphthalen-1-yl)tetrahydrothiophene i, trifluorosulfonium sulfonate (4-oxaonaphthalen-1-yl)tetrahydrothiophene, trifluoroantimony Sulfonic acid benzoate (4-ethoxynaphthalen-1-yl)tetrahydrothiophene ί, tris, phthalic acid 1-(4-n-butoxynaphthalen-1-yl)tetrahydro fluorene, trifluoromethane Acid 1-(4-oxooxaonaphthalen-1-yl)tetrahydroporphyrin paste, trifluorosulfonium sulfonate (4-ethoxyoxonaphthalen-1-yl)tetrahydrothiophene, trifluorosulfonate Acid 1-[4-U-methoxyethoxy]naphthalen-1-yl]tetrahydrothiophene read, 1-[4-(2-oximeoxyethoxy)naphthalen-1-yl]tetrahydrofuransulfonate Thiophene rhyme,

C:\2D-CODE\91-09\91114303.ptd 第100頁 1304060 五、發明說明(96) 九氟正丁石黃酸1 - [ 4 - ( 2 -曱氧乙氧)萘-1 -基]四氫σ塞吩?:南、 全氟正辛石黃酸1-[4-(2-曱氧乙氧)萘-1-基]四氫σ塞吩餘1、 三氟曱石黃酸1_(4-甲氧獄基氧萘-1-基)四氫σ塞吩錄、 三氟曱磺酸卜(4-乙氧羰基氧萘-1-基)四氫噻吩祿、 三氟曱磺酸卜(4 -正丙氧羰基氧萘-1-基)四氫噻吩義丨、 三氟曱績酸1-(4-異丙氧幾基氧萘-1-基)四氫σ塞吩_、 三I曱績酸1-(4 -正丁氧魏基氧萘-I -基)四氫σ塞吩销、 三氟曱磺酸卜(4-第三丁氧羰基氧萘-1-基)四氫噻吩鑛、 三氟曱磺酸卜(4- ¥氧萘-卜基)四氫噻吩賴、 三氟曱磺酸卜(2 -萘-1-基-2 -酮乙基)四氫噻吩、 三氟甲續酸1-[4-(2_四氫咬喃氧)萘-1-基]四氫σ塞吩筛、 三氟曱磺酸卜[4-(2 -四氫哌喃氧)萘-1-基]四氫噻吩_等 等。 &lt;砸化合物〉 關於颯化合物之例子,可舉出b -酮砜、b -磺醯基砜、及 此等化合物之a-重氮化合物。 關於砜化合物之明確例子,可舉出苯曱醯曱基苯基砜、 2, 4, 6 -三曱苯基苯甲醯曱基砜、雙(苯磺醯基)甲烷、及4-參苯曱醯曱基砜。 〈磺酸酯化合物〉 關於績酸酯化合物之例子,可舉出續酸烧酯、石黃酸ii烧 酉旨、績酸芳s旨、及績酸亞胺s旨。 關於續酸酯化合物之明確例子,可舉出安息香甲苯石黃酸 酯、五倍子酚曱三磺酸酯、硝苄基-9,1 0 -二乙氧蔥-2 -磺C:\2D-CODE\91-09\91114303.ptd Page 100 1304060 V. INSTRUCTIONS (96) Nonafluoro-n-butyl phthalate 1-[4-(2-oxoethoxy)naphthalen-1-yl ] tetrahydro σ septene?: South, perfluoro-n-sphingoic acid 1-[4-(2-oxime oxyethoxy)naphthalen-1-yl]tetrahydro σ-septene 1, fluorite 1_(4-methoxyheptyloxynaphthalen-1-yl)tetrahydro sigma, trifluorosulfonium sulfonate (4-ethoxycarbonyloxynaphthalen-1-yl)tetrahydrothiophene, trifluorosulfonate Acid bromide (4-n-propoxycarbonyloxynaphthalen-1-yl)tetrahydrothiophene fluorene, trifluoromethane acid 1-(4-isopropoxy methoxynaphthalen-1-yl)tetrahydro σ septene , Tri-I-acid acid 1-(4-n-butoxy-methoxy-naphthalenyl-I-yl)tetrahydro-sodium sulfonate, trifluorosulfonium sulfonate (4-tertoxycarbonyloxynaphthalen-1-yl) Tetrahydrothiophene ore, trifluorosulfonium sulfonate (4- oxaphthalene-buyl) tetrahydrothiophene lysine, trifluorosulfonium sulfonate (2-naphthalen-1-yl-2-one ethyl) tetrahydrogen Thiophene, trifluoromethyl 1-[4-(2-tetrahydroindolyl)-naphthalen-1-yl]tetrahydro σ thiophene sieve, trifluorosulfonium sulfonate [4-(2-tetrahydropyran) Oxy)naphthalen-1-yl]tetrahydrothiophene _ and the like. &lt;Antimony compound&gt; Examples of the hydrazine compound include b-ketosulfone, b-sulfonylsulfone, and a-diazo compound of these compounds. Specific examples of the sulfone compound include benzoylphenyl sulfone, 2,4,6-trisylphenyl benzhydryl sulfone, bis(phenylsulfonyl)methane, and 4-paraben. Mercaptosulfone. <Sulfonate compound> Examples of the acid ester compound include a sucrose-saturated ester, a sulphuric acid ii, a sulphuric acid, a sulphuric acid, and an acid imide. As clear examples of the reductate compound, benzoin toluene, ester, gallic phenolphthalein trisulfonate, nitrobenzyl-9,10-diethoxy onion-2-sulfonate

C:\2D-CODE\91-09\91114303.ptd 第101頁 1304060 五、發明說明(97) 酸酯、a-羥曱基安息香甲苯磺酸酯、a-羥甲基安息香三氟 曱磺酸酯、a-羥曱基安息香正辛磺酸酯、a-羥曱基安息香 十二基磺酸酯等等。 〈二磺醯基重氮甲烷化合物〉 關於二磺醯基重氮曱烷化合物之例子,可舉出由以下化 學式(2 9 )所示之化合物等等: 〇 Ν2 Ο 97丨丨丨丨丨1 27 R27—S—C—S—R27 (29) II 11 0 〇 其中R27分別代表單價基團諸如烷基、芳基、鹵化烷基、及 鹵化芳基。 關於二磺酸基重氮曱烧化合物之明確例子,可舉出 雙(三氟甲磺醯基)重氮甲烷、 雙(環己磺醯基)重氮曱烷、 雙(苯磺醯基)重氮曱烷、 雙(對曱苯磺醯基)重氮曱烷、 雙(2, 4 -二甲基苯磺醯基)重氮曱烷、 曱磺醯基對曱苯磺醯基重氮甲烷、 雙(4-第三丁苯磺醯基)重氮甲烷、 雙(4-氣苯磺醯基)重氮甲烷、 (環己磺醯基)(對甲苯磺醯基)重氮曱烷、 (環己磺醯基)(1,1 -二曱基乙磺醯基)重氮甲烷、C:\2D-CODE\91-09\91114303.ptd Page 101 1304060 V. INSTRUCTIONS (97) Acid ester, a-hydroxyindole benzoin tosylate, a-hydroxymethylbenzoin trifluorosulfonate Ester, a-hydroxyindole benzoin n-octyl sulfonate, a-hydroxyindole benzoin dodecyl sulfonate, and the like. <Disulfonyldiazomethane compound> Examples of the disulfonyldiazomethane compound include compounds represented by the following chemical formula (2 9 ): 〇Ν2 Ο 97丨丨丨丨丨1 27 R27—S—C—S—R27 (29) II 11 0 wherein R 27 represents a monovalent group such as an alkyl group, an aryl group, an alkyl halide group, and a halogenated aryl group, respectively. Specific examples of the disulfonic acid diazonium terbene compound include bis(trifluoromethanesulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazonium, and bis(phenylsulfonyl). Diazononane, bis(p-phenylenesulfonyl)diazononane, bis(2,4-dimethylphenylsulfonyl)diazonium, sulfonyl-p-phenylenesulfonyl-diazo Methane, bis(4-t-butylphenylsulfonyl)diazomethane, bis(4-sulfosulfonyl)diazomethane, (cyclohexylsulfonyl)(p-toluenesulfonyl)diazodecane (cyclohexylsulfonyl) (1,1-dimercaptoethanesulfonyl) diazomethane,

C:\2D-CODE\91-09\91114303.ptd 第102頁 1304060 五、發明說明(98) 雙(1,1-二曱基乙磺醯基)重氮曱烷、 雙(1-曱基乙磺醯基)重氮曱烷、 雙(3, 3 -二曱基-1,5 -二4螺[5.5]十二烷-8 -磺醯基)重氮 曱烷、 雙(1,4_二4螺[4· 5]癸烷-7_磺醯基)重氮曱烷等等。 〈二磺醯基曱烷化合物〉 關於二磺醯基甲烷化合物之例子,可舉出由以下化學式 (3 0 )所示之化合物等等: R28—S—C-S-R28 (30) 〇 W 〇 其中R28分別代表直鏈或分支鏈單價脂族烴基、環烷基、芳 基、芳烷基、或其他具有雜原子之單價有機基團,V及W分 別代表芳基、氫原子、直鏈或分支鏈單價脂族烴基、或其 他具有雜原子之單價有機基團,其限制條件為V及W之至少 一者代表芳基,或V及W鍵結形成具有至少一不飽和鍵的單 環或多環狀環,或V及W鍵結形成由以下化學式(3 1)所示之 基團:C:\2D-CODE\91-09\91114303.ptd Page 102 1304060 V. INSTRUCTIONS (98) Bis(1,1-dimercaptoethanesulfonyl)diazononane, bis(1-indenyl) Ethylsulfonyl)diazononane, bis(3,3-dimercapto-1,5-di- 4-spiro[5.5]dodecane-8-sulfonyl)diazononane, double (1,4 _2 4 snail [4· 5] decane-7 sulfonyl) diazonium decane and the like. <Disulphonyl decane compound> Examples of the disulfonyl methane compound include compounds represented by the following chemical formula (30): R28-S-CS-R28 (30) 〇W 〇 R28 represents a linear or branched monovalent aliphatic hydrocarbon group, a cycloalkyl group, an aryl group, an aralkyl group, or another monovalent organic group having a hetero atom, and V and W represent an aryl group, a hydrogen atom, a straight chain or a branch, respectively. a chain monovalent aliphatic hydrocarbon group, or another monovalent organic group having a hetero atom, wherein the restriction is that at least one of V and W represents an aryl group, or V and W are bonded to form a single ring or more having at least one unsaturated bond. The cyclic ring, or the V and W bonds, form a group represented by the following chemical formula (3 1):

C:\2D-C0DE\91-09\91114303.ptd 第103頁 1304060 五、發明說明(99) 其中V’及W’分別代表氫原子、鹵原子、烷基、環烷基、芳 基、或芳烷基,或V’及W’各鍵結至相同或不同的碳原子鍵 而形成單環碳結構,及b為2至1 0之整數。 〈磺酸肟化合物〉 關於磺酸肟化合物之例子,可舉出以下化學式(3 2 - 1)或 (3 2 - 2 )之化合物: R29 〇 I II , NC—C=N—〇一S—R30 (32-1) 〇 0 R29 〇 (32-2)C:\2D-C0DE\91-09\91114303.ptd Page 103 1304060 V. Inventive Note (99) wherein V' and W' represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, or The aralkyl group, or V' and W', are each bonded to the same or different carbon atom bond to form a monocyclic carbon structure, and b is an integer from 2 to 10. <Sulphonic acid sulfonium compound> Examples of the sulfonic acid sulfonium compound include compounds of the following chemical formula (3 2 - 1) or (3 2 - 2 ): R29 〇I II , NC-C=N-〇-S- R30 (32-1) 〇0 R29 〇(32-2)

R30— S— ο— N—c— C=N— o—s— R30 II 129 H 〇 R29 〇 其中R29及R3G分別代表單價有機基團,及當存在兩R29及R3G基 團時,此等基團可相同或不同。 關於化學式(32-1)及(32 - 2)中之R29之明確例子,可舉出 曱基、乙基、正丙基、苯基、甲苯磺醯基等等。 關於化學式(32-1)及(32-2)中之R3G之明確例子,可舉出 苯基、曱苯磺醯基、萘基等等。 〈磺酸肼化合物〉 關於磺酸肼化合物之例子,可舉出R30— S— ο— N—c— C=N— o—s— R30 II 129 H 〇R29 〇 wherein R29 and R3G represent a monovalent organic group, respectively, and when two R29 and R3G groups are present, such a group Groups can be the same or different. As a clear example of R29 in the chemical formulae (32-1) and (32-2), a mercapto group, an ethyl group, a n-propyl group, a phenyl group, a toluenesulfonyl group and the like can be given. As a clear example of R3G in the chemical formulas (32-1) and (32-2), a phenyl group, a pyrene sulfonyl group, a naphthyl group or the like can be given. <Sulphonic acid sulfonium compound> Examples of the sulfonic acid sulfonium compound include

C:\2D-C0DE\91-09\91114303.ptd 第104頁 1304060 五、發明說明(100) 雙(苯)磺醯肼、 雙(對曱苯)磺醯肼、 雙(三氟曱烧)石黃醯肼、 雙(九氟正丁烷)磺醯肼、 雙(正丙烧)續醯肼、 苯磺醯肼、 對甲苯磺醯肼、 三氟曱磺醯肼、 九氟正丁磺醯肼、 正丙磺醯肼、 三氟曱磺醯基對曱苯磺醯肼等等。 在此等其他酸產生劑之中,三氟曱磺酸二(第三丁苯基) 錤、1 0 -樟腦磺酸二(第三丁苯基)酯、三氟曱磺酸三苯#U 、1 0 -掉腦續酸三苯氣、N -(三氣曱續醯基氧)-7 -吟雙環 [2.2.1]庚-5-烯-2,3-二羧醯亞胺、^(10-樟腦磺醯基氧) 琥珀醯亞胺等等為較佳。 此等其他的酸產生劑可個別或以兩者或以上之組合使 用。 在輻射敏感性樹脂組成物(i ) - (i i i)中,對1 0 0重量百分 比之酸產生劑(I )及其他酸產生劑之總量,其他酸產生劑 之使用比例係9 0重量百分比或以下較佳,及8 0重量百分比 或以下特佳。 雖然正型輻射敏感性樹脂組成物(i )、正型輻射敏感性 樹脂組成物(i i )、及負型輻射敏感性樹脂組成物(i i i)中C:\2D-C0DE\91-09\91114303.ptd Page 104 1304060 V. INSTRUCTIONS (100) Bis(phenyl)sulfonate, bis(p-phenylene)sulfonate, bis(trifluoroanthracene) Astragalus membranaceus, bis(nonafluoro-n-butane) sulfonium sulfonate, bis(n-propyl) hydrazine, benzenesulfonate, p-toluenesulfonate, trifluorosulfonium sulfonate, nonafluorobutanesulfonate , n-propionyl sulfonium, trifluorosulfonyl sulfonyl p-phenylene sulfonate and the like. Among these other acid generators, bis(t-butylphenyl)phosphonium trifluorosulfonate, bis(t-butylphenyl) ester of 10-camphorsulfonate, triphenylsulfonate triphenylsulfonate #U , 1 0 - cerebral acid triphenyl gas, N - (three gas 醯 醯 氧 oxy)-7 - 吟 bicyclo [2.2.1] hept-5-ene-2,3-dicarboxy quinone imine, ^ (10-camphorsulfonyloxy) Amber quinone imine or the like is preferred. These other acid generators may be used singly or in combination of two or more. In the radiation-sensitive resin compositions (i) - (iii), for the total amount of the acid generator (I) and other acid generators of 100% by weight, the ratio of use of other acid generators is 90% by weight. Or preferably, and preferably 80% by weight or less. Although the positive type radiation sensitive resin composition (i), the positive type radiation sensitive resin composition (i i ), and the negative type radiation sensitive resin composition (i i i)

C:\2D-C0DE\91-09\91114303.ptd 第105頁 1304060C:\2D-C0DE\91-09\91114303.ptd Page 105 1304060

的特性而異,但較佳的 五、發明說明(101) 之成份的比例係根據光阻劑所期望 比例如下。 對於正型輻射敏感性樹脂組成物(i)及正 :脂組成物⑴),對m份重量之含酸可裂解基;于之樹脂 或鹼可溶解樹脂,酸產生劑(1)之添加量係〇 ()ι_7〇份重量 較佳,0·卜50份重量又更佳,及〇· 5_2〇份重量特佳。低於 0.01份重量之酸產生劑(1)的量會使敏感度及解析度減 損。如其量超過70份重量’則光阻劑塗層性f及圖案形態 有受到不利影響的傾向。The characteristics vary, but it is preferable that the ratio of the components of the invention (101) is as follows according to the desired ratio of the photoresist. For the positive type radiation sensitive resin composition (i) and the positive: fat composition (1)), for the m part by weight of the acid-containing cleavable group; the resin or the alkali soluble resin, the acid generator (1) The system ()ι_7 part is better in weight, 0 · 50 parts by weight is better, and 〇 · 5_2 parts by weight is particularly good. The amount of the acid generator (1) of less than 0.01 part by weight detracts from sensitivity and resolution. If the amount exceeds 70 parts by weight, the photoresist coating property f and the pattern form tend to be adversely affected.

對於正型輻射敏感性樹脂組成物(i丨),對10 0份重量之 鹼可溶解樹脂,鹼溶解度控制劑之添加量係5 —i 5〇份重量 較,,5-100份重量又更佳,及5_5〇份重量特佳。低於5份 重量之鹼溶解度控制劑的量會使殘留塗層率減低及造成圖 案膨脹。如其量超過1 50份重量,則有發生塗層表面變粗 及塗層表面強度減低的傾向。For the positive-type radiation-sensitive resin composition (i丨), for 100 parts by weight of the alkali-soluble resin, the amount of the alkali solubility control agent is 5 - i 5 parts by weight, and 5 to 100 parts by weight is more Good, and 5_5 parts weight is particularly good. An amount of the alkali solubility control agent of less than 5 parts by weight reduces the residual coating rate and causes the pattern to swell. If the amount exceeds 150 parts by weight, there is a tendency that the surface of the coating becomes thick and the surface strength of the coating layer is lowered.

對於負型輻射敏感性樹脂組成物(i丨丨),對1〇〇份重量之 鹼可溶解樹脂,酸產生劑(1)之添加量係〇 〇卜7〇份重量較 佳,〇· 1-50份重量又更佳,及〇· 5 —2〇份重量特佳。低於 0· 0 1份重量之酸產生劑(I)的量會使敏感度及解析度減 損。如其量超過70份重量,則光阻劑塗層性質及圖案形態 有受到不利影響的傾向。 ^ 對100份重量之鹼可溶解樹脂,交聯劑(Ε)之添加量係 5-95份重量較佳,15-85份重量又更佳,及20 —75份重量特 佳。低於5份重量之交聯劑(Ε)的量會使殘留塗層率減低及For the negative-type radiation-sensitive resin composition (i丨丨), the amount of the alkali-soluble resin is 1 part by weight, and the amount of the acid generator (1) is preferably 7 parts by weight, 〇·1 - 50 parts by weight is better, and 〇 · 5 - 2 parts by weight is particularly good. The amount of the acid generator (I) of less than 0.1 part by weight detracts from sensitivity and resolution. If the amount exceeds 70 parts by weight, the photoresist coating properties and pattern morphology tend to be adversely affected. For 100 parts by weight of the alkali-soluble resin, the crosslinking agent (p) is preferably added in an amount of from 5 to 95 parts by weight, more preferably from 15 to 85 parts by weight, still more preferably from 20 to 75 parts by weight. Amount of less than 5 parts by weight of the crosslinking agent (Ε) will reduce the residual coating rate and

1304060 .- 五、發明說明(102) :頃向於造成圖案的扭曲及膨脹。如其量1304060 .- V. Invention Description (102): It is intended to cause distortion and expansion of the pattern. Amount

曝先&amp;域之可顯影性有減低的傾向。 貝J 〈酸擴散控制劑〉 正:ϊ ΐ制劑加至正型輻射敏感性樹脂組成物⑴、 么且iL f奎 組成物(ιι)、及負型轄射敏感性樹脂 佳。酸擴散控制劑控制當曝光時於光阻劑 试二s欠產生劑所產生之酸的擴散,而阻止未經曝光區 域中之不利的化學反應。 加入酸擴散控制劑可改良組成物之儲存安定性及作為光 =劑的=析度三此外,加入酸擴散控制劑可防止光阻劑圖 &gt;、之線見因暴露至曝光後熱處理之曝光後延遲(pED)所致 之變化,由此可製得具顯著優良之加工安定性的組成物。 關於酸擴散控制劑,其之鹼度在形成光阻劑圖案之曝光 或加熱過程中不會改變的含氮有機化合物較佳。 關於此種含氮有機化合物的例子,可舉出由以下化學式 (33)所示之化合物(以下稱為「含氮化合物(Q )」), R31 (33) R31 -Ν -R31 其中R3、1分別代表氫原子、烷基、芳基、或芳烷基,其係未 經取代或經官能基諸如經基取代。 分子中具有兩個氮原子之二胺基化合物(以下稱為「含There is a tendency for the developability of the exposure &amp; field to decrease. Shell J <Acid Diffusion Control Agent> Positive: ΐ The bismuth preparation is added to the positive radiation sensitive resin composition (1), and the iL f quinone composition (ι) and the negative susceptibility sensitive resin are preferred. The acid diffusion controlling agent controls the diffusion of the acid generated by the photoresist during the exposure to the photoresist, thereby preventing unfavorable chemical reactions in the unexposed regions. The addition of an acid diffusion controlling agent can improve the storage stability of the composition and the degree of resolution as a light agent. In addition, the addition of an acid diffusion controlling agent can prevent the photoresist pattern from being exposed to the post-exposure heat treatment exposure. A change due to post-delay (pED), whereby a composition having remarkably excellent processing stability can be obtained. Regarding the acid diffusion controlling agent, the nitrogen-containing organic compound whose alkalinity does not change during the exposure or heating of the photoresist pattern is preferable. Examples of such a nitrogen-containing organic compound include a compound represented by the following chemical formula (33) (hereinafter referred to as "nitrogen-containing compound (Q)"), R31 (33) R31 - Ν - R31 wherein R3, 1 Respectively represent a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group, which is unsubstituted or substituted with a functional group such as a trans group. a diamine-based compound having two nitrogen atoms in the molecule (hereinafter referred to as "including

C:\2D-OODE\91-〇9\91114303.ptd 第107頁 1304060 五、發明說明(103) 氮化合物(/3)」)、分子中具有三個或以上之氮原子的二 胺基聚合物(以下稱為「含氮化合物(7 )」)、含醯胺基之 化合物、脲化合物、及含氮雜環化合物。 含氮化合物(α)之例子包括單烧基胺諸如正己胺、正庚 胺、正辛胺、正壬胺、及正癸胺;二烷基胺諸如二正丁 胺、二正戊胺、二正己胺、二正庚胺、二正辛胺、二正壬 胺、及二正癸胺;三烷基胺諸如三乙胺、三正丙胺、三正 丁胺、三正戊胺、三正己胺、三正庚胺、三正辛胺、三正 壬胺、及三正癸胺;及芳族胺諸如苯胺、Ν-曱基苯胺、Ν, Ν-二曱基苯胺、2-曱基苯胺、3-曱基苯胺、4-曱基苯胺、 4 -确基苯胺、二苯胺、三苯胺、及1 -萘胺。 含氮化合物(/5)之例子包括乙二胺、Ν,Ν,Ν’,Ν’ _四曱基 乙二胺、Ν,Ν,Ν’,Ν’ -肆(2 -羥丙基)乙二胺、四亞甲二胺、 六亞甲二胺、4, 4’ -二胺基二苯基曱烷、4, 4’-二胺基二苯 基醚、4, 4’ -二胺基二苯基酮、4, 4’-二胺基二苯胺、 2,2’ •雙(4 -胺苯基)丙烧、2-(3 -胺苯基2-(4 -胺苯基)丙 烧、2 -(4 -胺苯基)-2-(3 -經苯基)丙烧、2-(4 -胺苯基) -2-(4-羥苯基)丙烷、1,4-雙[1-(4 -胺苯基)-1-曱基乙基] 苯、及1,3 -雙[1 -(4 -胺苯基)-1-曱基乙基]苯。 含氮化合物(r )之例子包括聚乙烯亞胺、聚烯丙胺、二 曱胺乙基丙烯醯胺之聚合物等等。 含醯胺基之化合物的例子包括曱醯胺、N -曱基曱醯胺、 N,N-二曱基曱醯胺、乙醯胺、N-曱基乙醯胺、N,N-二甲基 乙醯胺、丙醯胺、苯曱醯胺、吼咯啶酮、及N-曱基咄咯啶C:\2D-OODE\91-〇9\91114303.ptd Page 107 1304060 V. INSTRUCTIONS (103) Nitrogen compound (/3)"), diamine polymerization of three or more nitrogen atoms in the molecule (hereinafter referred to as "nitrogen-containing compound (7)"), a guanamine-containing compound, a urea compound, and a nitrogen-containing heterocyclic compound. Examples of the nitrogen-containing compound (α) include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-decylamine, and n-decylamine; dialkylamines such as di-n-butylamine, di-n-pentylamine, and n-Hexylamine, di-n-heptylamine, di-n-octylamine, di-n-decylamine, and di-n-decylamine; trialkylamines such as triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine , tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, and tri-n-decylamine; and aromatic amines such as aniline, anthracene-nonylaniline, anthracene, fluorenyl-diphenylaniline, 2-mercaptoaniline, 3-mercaptoaniline, 4-mercaptoaniline, 4-n-aniline, diphenylamine, triphenylamine, and 1-naphthylamine. Examples of the nitrogen-containing compound (/5) include ethylenediamine, hydrazine, hydrazine, hydrazine, Ν' _tetradecylethylenediamine, hydrazine, hydrazine, hydrazine, Ν'-肆 (2-hydroxypropyl) Diamine, tetramethylenediamine, hexamethylenediamine, 4,4'-diaminodiphenylnonane, 4,4'-diaminodiphenyl ether, 4,4'-diamine Diphenyl ketone, 4, 4'-diaminodiphenylamine, 2,2' • bis(4-aminophenyl)propane, 2-(3-aminophenyl 2-(4-aminophenyl)propene , 2-(4-aminophenyl)-2-(3-phenyl)propane, 2-(4-aminophenyl)-2-(4-hydroxyphenyl)propane, 1,4-double [1-(4-Aminophenyl)-1-indenylethyl]benzene, and 1,3-bis[1-(4-aminophenyl)-1-indenylethyl]benzene. Nitrogen-containing compound Examples of r) include polyethyleneimine, polyallylamine, diammonium ethyl acrylamide, etc. Examples of the guanamine-containing compound include guanamine, N-mercaptoamine, N , N-dimercaptoamine, acetamide, N-mercaptoacetamide, N,N-dimethylacetamide, acetamide, benzoguanamine, pyrrolidone, and N- Mercaptopurine

C:\2D-CODE\91-09\91114303.ptd 第108頁 1304060 五、發明說明(104) 酮〇 服化合物之例子包括尿素、甲脈、1,1_二曱脈、1,3 -二 曱脲、1,1,3, 3 -四曱脲、1,3 -二苯脲、及三丁基硫脲。 含氮雜環化合物之例子包括咪唑類諸如咪唑、4 -曱基咪 ϋ坐、4 -曱基-2 -苯基11米ϋ坐、苯并味σ坐及2 -苯基苯并味σ坐; °比σ定類諸如°比σ定、2 -曱吼17定、4 -甲°比σ定、2 -乙吼σ定、4 -乙 吼σ定、2 -苯口比ϋ定、4 -苯吼σ定、Ν -甲基- 4 -苯〇比σ定、於驗、 於驗酸、於驗醯胺、嗜琳、8 -氧嗜琳、及ρ、/ σ 定;吼嘴、ρ比 。坐、塔。井、嗜喏琳、嘌吟、吼略咬、六氫吼唆、嗎琳、4-甲基嗎琳、六氫ρ比畊、1,4 -二甲基六氫吼σ井、1,4 -二吖雙 環[2 · 2 · 2 ]辛烷、啡啉等等。 亦可將具有酸可裂解基團之含氮化合物使用作為含氮有 機化合物。 關於具有酸可裂解基團之含氮化合物的例子,可舉出 Ν-(第三丁氧羰基)六氫吼啶、Ν-(第三丁氧羰基)咪唑、 Ν-(第三丁氧羰基)苯并咪唑、Ν-(第三丁氧羰基)-2 -苯基 苯并咪唑、Ν-(第三丁氧羰基)二辛胺、Ν-(第三丁氧羰基) 二乙醇胺、Ν-(第三丁氧羰基)二環己胺、Ν-(第三丁氧羰 基)二苯胺等等。 在此等含氮有機化合物之中,含氮化合物(α )、含氮化 合物(石)、含氮雜環化合物、及具有酸可裂解基團之含氮 化合物等等為較佳。 酸擴散控制劑可個別或以兩者或以上之組合使用。 對1 0 0份重量之含酸可裂解基團之樹脂或鹼可溶解樹C:\2D-CODE\91-09\91114303.ptd Page 108 1304060 V. INSTRUCTIONS (104) Examples of ketone oxime compounds include urea, alpha vein, 1,1_two veins, 1,3 - two Urea urea, 1,1,3,3-tetraguanazone, 1,3-diphenylurea, and tributylthiourea. Examples of the nitrogen-containing heterocyclic compound include imidazoles such as imidazole, 4-mercaptopurine, 4-mercapto-2-phenyl 11 m squat, benzo sigma and 2-phenyl benzo s ° ° ratio σ class such as ° σ set, 2 - 曱吼 17 set, 4 - A ratio σ, 2 - 吼 吼 定, 4 - 吼 吼 定, 2 - benzene ratio 、, 4 - benzoquinone sigma, Ν-methyl-4 benzoquinone ratio σ, test, acid test, test guanamine, 琳琳, 8-oxoline, and ρ, / σ 定; ρ ratio. Sitting, tower. Well, scorpion, scorpion, scorpion, hexahydro hydrazine, morphine, 4-methyl phenanthrene, hexahydro ρ plough, 1,4 - dimethyl hexahydro 吼 σ well, 1, 4 - Diterpene bicyclo [2 · 2 · 2 ] octane, phenanthroline and the like. A nitrogen-containing compound having an acid cleavable group can also be used as the nitrogen-containing organic compound. Examples of the nitrogen-containing compound having an acid cleavable group include fluorene-(t-butoxycarbonyl)hexahydroacridine, fluorene-(t-butoxycarbonyl)imidazole, fluorene-(t-butoxycarbonyl) Benzimidazole, hydrazine-(t-butoxycarbonyl)-2-phenylbenzimidazole, hydrazine-(t-butoxycarbonyl)dioctylamine, hydrazine-(t-butoxycarbonyl)diethanolamine, hydrazine- (Third butoxycarbonyl) dicyclohexylamine, hydrazine-(t-butoxycarbonyl)diphenylamine, and the like. Among these nitrogen-containing organic compounds, a nitrogen-containing compound (α), a nitrogen-containing compound (stone), a nitrogen-containing heterocyclic compound, a nitrogen-containing compound having an acid cleavable group, and the like are preferable. The acid diffusion controlling agents may be used singly or in combination of two or more. 100% by weight of acid-soluble cleavable group resin or alkali soluble tree

C: \2D-OODE\91-09\91114303.ptd 第109頁 1304060 五、發明說明(105) 月曰’酸擴散控制劑之添加量通常係1 5份重量以下,以 0 · 〇 〇 1 - 1 0份重量較佳,及〇. 〇 〇 5 - 5份重量又更佳。如酸擴 散控制劑之比例超過1 5份重量,則作為光阻劑之敏感度及 經曝光區域之可顯影性有減低的傾向。如其量低於〇. 001 份重量’則作為光阻劑之圖案形狀或尺寸準確度會視加工 條件而減低。 〈驗可溶解樹脂〉 視需要可將鹼可溶解樹脂(以下稱為「鹼可溶解樹脂 (c )」)加至正型輻射敏感性樹脂組成物(i )。 關於鹼可溶解樹脂(c)之例子,可舉出聚(4 -羥苯乙稀) 、部分氫化聚(4 -羥苯乙烯)、聚(3 -羥苯乙烯)、部分氫化 聚(3 -羥苯乙烯)、4 -羥苯乙烯/ 3-羥苯乙烯共聚物、4-羥 笨乙烯/苯乙烯共聚物、酚醛型環氧樹脂、聚乙烯醇、聚 丙烯酸等等。 驗可溶解樹脂(c)之Mw為1,0 0 0- 1,0 0 0,0 0 0,及以2, 〇〇〇- 1 〇 0,0 0 0 較佳。 此等鹼可溶解樹脂(C)可個別或以兩者或以上之組合使 用。 對1 0 0份重量之含酸可裂解基團之樹脂,鹼可溶解樹脂 (C)之添加量為3 0份重量以下較佳。 〈表面活性劑〉 可將展現改良組成物之塗布性或線條及作為光阻劑之可 顯影性之作用的表面活性劑加至正型輻射敏感性樹脂組成 物(i )、正型輻射敏感性樹脂組成物(i i )、及負型輻射敏C: \2D-OODE\91-09\91114303.ptd Page 109 1304060 V. INSTRUCTIONS (105) The amount of the acid diffusion control agent is usually less than 15 parts by weight, with 0 · 〇〇1 - 10 parts by weight is preferred, and 〇. 〇〇 5 - 5 parts by weight is better. If the ratio of the acid diffusion controlling agent exceeds 15 parts by weight, the sensitivity as a photoresist and the developability in the exposed region tend to be lowered. If the amount is less than 〇. 001 parts by weight, the pattern shape or dimensional accuracy of the photoresist will be reduced depending on the processing conditions. <Soluble-Soluble Resin> An alkali-soluble resin (hereinafter referred to as "alkali-soluble resin (c)") may be added to the positive-type radiation-sensitive resin composition (i) as needed. Examples of the alkali-soluble resin (c) include poly(4-hydroxystyrene), partially hydrogenated poly(4-hydroxystyrene), poly(3-hydroxystyrene), and partially hydrogenated poly(3- Hydroxystyrene), 4-hydroxystyrene/3-hydroxystyrene copolymer, 4-hydroxystyrene/styrene copolymer, novolac epoxy resin, polyvinyl alcohol, polyacrylic acid, and the like. It is preferable that the Mw of the soluble resin (c) is 1,0 0 0-1, 0 0 0, 0 0 0, and 2, 〇〇〇-1 〇 0,0 0 0 is preferable. These alkali-soluble resins (C) may be used singly or in combination of two or more. The amount of the alkali-soluble resin (C) added is preferably 30 parts by weight or less based on 100 parts by weight of the acid-containing cleavable group-containing resin. <Surfactant> A surfactant exhibiting a coating property or a line of an improved composition and a developability as a photoresist can be added to the positive radiation sensitive resin composition (i), positive radiation sensitivity Resin composition (ii), and negative radiation sensitivity

第110頁 C:\2D-C0DE\91-09\9llM303.ptd 1304060 五、發明說明(106) 感性樹脂組成物(i i i )。 此種表面活性劑之例子包括聚氧伸乙基月桂基醚、聚氧 伸乙基硬脂基醚、聚氧伸乙基油基醚、聚氧伸乙基正辛基 酚醚、聚氧伸乙基正壬基酚醚、聚乙二醇二月桂酸酯、聚 乙二醇二硬脂酸酯;及市售產品諸如FTOP EF301、EF303 、EF3 5 2 (TOHKEM PRODUCTS CORPORATION 製造)、MEGAFAC F171、F173(Dainippon Ink and Chemicals,Inc·製造) 、Fluorad FC430、FC431 (Sumitomo 3M Ltd·製造)、 Asahi Guard AG710、Surf Ion S-3 82、SC-101、SC-102、 SC-103 、SC-104 、SC-105 、SC-106(Asahi Glass Co·, L t d ·製造)、K P 3 4 1 (S h i η - E t s u C h e m i c a 1 C o ·,L t d ·製 造)、及Polyflow No· 75 、 No. 95 (Kyoeisha Chemical Co·,Ltd·製造)。 此等表面活性劑可個別或以兩者或以上之組合使用。 對1 0 0份重量之含酸可裂解基團之樹脂或鹼可溶解樹脂 ,表面活性劑之添加量為2份重量以下較佳。 〈感光劑〉 可將感光劑加至正型輻射敏感性樹脂組成物(i )、正型 輻射敏感性樹脂組成物(i i )、及負型輻射敏感性樹脂組成 物(i i i ) 0 關於感光劑之例子,可舉出咔唑、二苯基酮、孟加拉玫 瑰素、蔥等等。 此等感光劑可個別或以兩者或以上之組合使用。對1 0 0 份重量之含酸可裂解基團之樹脂或驗可溶解樹脂,感光劑Page 110 C:\2D-C0DE\91-09\9llM303.ptd 1304060 V. INSTRUCTIONS (106) Inductive resin composition (i i i ). Examples of such surfactants include polyoxyethylene ethyl lauryl ether, polyoxyethylene ethyl stearyl ether, polyoxyethylene ethyl oleyl ether, polyoxyethylidene octyl phenol ether, polyoxygen extension Ethyl n-decyl phenol ether, polyethylene glycol dilaurate, polyethylene glycol distearate; and commercially available products such as FTOP EF301, EF303, EF3 5 2 (manufactured by TOHKEM PRODUCTS CORPORATION), MEGAFAC F171, F173 (manufactured by Dainippon Ink and Chemicals, Inc.), Fluorad FC430, FC431 (manufactured by Sumitomo 3M Ltd.), Asahi Guard AG710, Surf Ion S-3 82, SC-101, SC-102, SC-103, SC-104 , SC-105, SC-106 (manufactured by Asahi Glass Co., L td ·), KP 3 4 1 (S hi η - E tsu C hemica 1 C o ·, manufactured by L td ·), and Polyflow No. 75, No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.). These surfactants may be used singly or in combination of two or more. The resin or the alkali-soluble resin having 100 parts by weight of the acid-cleavable group is preferably used in an amount of 2 parts by weight or less. <Sensitizer> A sensitizer may be added to the positive type radiation sensitive resin composition (i), the positive type radiation sensitive resin composition (ii), and the negative type radiation sensitive resin composition (iii). Examples thereof include carbazole, diphenyl ketone, bengal rosin, onion, and the like. These sensitizers may be used singly or in combination of two or more. 100 parts by weight of resin containing acid cleavable group or soluble resin, sensitizer

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五、發明說明(107) 之添加量為5 0份重量或以下較佳。 〈其他添加劑〉 使經曝光區域之潛像 。可加入黏著助劑, 此外,可加入染料及/或顏料,以 可見,及降低曝光過程中的光暈效應 以改良對基材之黏著。 關於其他添加齊卜可加入光暈抑制劑諸如4_羥基一4, _甲 基查酮、形態改良劑、保存安定劑、消泡劑等等。 溶劑5. The amount of addition of the invention (107) is preferably 50 parts by weight or less. <Other Additives> A latent image of the exposed area. Adhesive aids may be added. In addition, dyes and/or pigments may be added to visualize and reduce the halo effect during exposure to improve adhesion to the substrate. For other additions, a halo inhibitor such as 4-hydroxy-4-, methicone, a morphological modifier, a storage stabilizer, an antifoaming agent and the like can be added. Solvent

正型輻射敏感性樹脂組成物⑴、正型㈣敏感性樹脂 組成,(1 1)、及負型輻射敏感性樹脂組成物(丨丨丨)係以組 成物浴液使用。此一組成物溶液係經由將組成物均勻溶解 於溶劑中,以致總固體濃度為〇•卜5〇重量百分比,及以 1-40重量百分比較佳,及將溶液過濾通過具有約〇. 2毫米 孔隙直徑之過濾器而製備得。 使用於製備組成物溶液之溶劑的例子包括: 乙二醇單烷基喊乙酸酯諸如乙二醇單曱基醚乙酸酯、乙二 醇單乙基醚乙酸酯、乙二醇單正丙基醚乙酸酯、及乙二醇 單正丁基醚乙酸酯;The positive type radiation sensitive resin composition (1) and the positive type (four) sensitive resin composition, (1 1), and the negative type radiation sensitive resin composition (丨丨丨) are used as a composition bath. 2毫米之间。 The composition is dissolved in a solvent, the total solid concentration is 〇 卜 〇 〇 〇 〇 〇 〇 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 毫米 毫米 毫米 毫米 毫米Prepared by a filter of pore diameter. Examples of the solvent used in the preparation of the composition solution include: ethylene glycol monoalkyl ketone acetate such as ethylene glycol monodecyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol single positive Propyl ether acetate, and ethylene glycol mono-n-butyl ether acetate;

丙二酵單烷基醚諸如丙二醇單甲基醚、丙二醇單乙基醚、 丙二醇單正丙基醚、及丙二醇單正丁基醚; 丙二醇二烷基醚諸如丙二醇二甲基醚、丙二醇二乙基醚、 丙二酵二正丙基醚、及丙二醇二正丁基醚; 丙二醇單烧基醚乙酸酯諸如丙二醇單甲基醚乙酸酯、丙二 醇單乙基喊乙酸酯、丙二醇單正丙基醚乙酸酯、及丙二醇Propylene glycol monoalkyl ether such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, and propylene glycol mono-n-butyl ether; propylene glycol dialkyl ether such as propylene glycol dimethyl ether, propylene glycol diethyl Ether, propylene glycol di-n-propyl ether, and propylene glycol di-n-butyl ether; propylene glycol monoalkyl ether acetate such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ketone acetate, propylene glycol single positive Propyl ether acetate, and propylene glycol

IB mm _圓 第112頁 C:\2D-C0DE\91-09\9lll4303.ptd 1304060 五、發明說明(108) 單正丁基醚乙酸酯; 乳酸酯諸如乳酸曱S旨、乳酸乙酯、乳酸正丙酯、及乳酸異 丙; 脂族羧酸酯諸如曱酸正戊酯、甲酸異戊酯、乙酸乙酯、乙 酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸 正戊S旨、乙酸異戊、丙酸異丙S旨、丙酸正丁 S旨、及丙酸 異丁酯; 其他酯諸如羥乙酸乙酯、2 -羥基-2 -曱基丙酸乙酯、2 -羥 基-3-曱基丁酸曱酯、曱氧乙酸乙酯、乙氧乙酸乙酯、3-曱氧丙酸曱酯、3-曱氧丙酸乙酯、3-乙氧丙酸甲酯、3-乙 氧丙酸乙酯、3-曱氧乙酸丁酯、3-甲基-3-曱氧乙酸丁 酯、3-曱基-3-曱氧丙酸丁酯、3-曱基-3-甲氧丁酸丁酯、 乙醯乙酸曱酯、乙醯乙酸乙酯、丙酮酸曱酿、及丙酮酸乙 酯; 芳族烴諸如曱苯及二曱苯; 酮諸如甲基乙基酮、曱基丙基酮、曱基丁基酮、2 -庚酮、 3 -庚酮、4 -庚酮、及環己酮; 醯胺諸如N -曱基曱醯胺、N,N -二曱基曱醯胺、N -曱基乙醯 胺、N,N -二曱基乙醯胺、及N -曱基吡咯啶酮;及 内諸如g - 丁内S旨等等。 此等溶劑可個別或以兩者或以上之組合使用。 光阻劑圖案之形成 經由使用適當的塗布方法諸如旋轉塗布、流延塗布、及 報塗,將如前所述而製備得之組成物溶液塗布至基材諸如IB mm _ circle page 112 C:\2D-C0DE\91-09\9lll4303.ptd 1304060 V. Description of invention (108) Mono-n-butyl ether acetate; lactate such as lactic acid 曱S, ethyl lactate , n-propyl lactate, and isopropyl lactate; aliphatic carboxylic acid esters such as n-amyl decanoate, isoamyl formate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate Ester, acetic acid, pentane acetate, isoamyl acetate, propionic acid isopropyl S, propionate n-butyl s, and isobutyl propionate; other esters such as ethyl hydroxyacetate, 2-hydroxy-2-mercaptopropyl Ethyl acetate, 2-hydroxy-3-indolyl decanoate, ethyl oxime acetate, ethyl ethoxyacetate, decyl 3-oxopropionate, ethyl 3-oxopropionate, 3-ethyl Methyl oxypropionate, ethyl 3-ethoxypropionate, butyl 3-oxime oxyacetate, butyl 3-methyl-3-indoleoxyacetate, butyl 3-mercapto-3-oxopropionate, Butyl 3-mercapto-3-methoxybutanoate, decyl acetate, ethyl acetate, pyruvic acid, and ethyl pyruvate; aromatic hydrocarbons such as toluene and diphenyl; ketones such as Methyl ethyl ketone, mercapto propyl ketone, decyl butyl ketone, 2-heptanone, 3-heptanone 4-heptanone, and cyclohexanone; guanamine such as N-mercaptoamine, N,N-didecylamine, N-mercaptoacetamide, N,N-dimercaptoacetamide And N-decylpyrrolidone; and internal such as g-butane S and the like. These solvents may be used singly or in combination of two or more. Formation of the photoresist pattern The composition solution prepared as described above is applied to a substrate such as by using a suitable coating method such as spin coating, cast coating, and recoating.

C:\2D-CODE\91-09\91114303.ptd 第113頁 1304060 五、發明說明(109) 矽晶圓或經覆蓋鋁之晶圓形成光阻劑塗層,而由正型 敏感性樹脂組成物(1)、正型輻射敏感性樹脂組成物(1^、 、及負型輻射敏感性樹脂組成物(lil)形成光阻劑圖宰。 然後視需要使光阻劑塗層在約7〇 —丨6〇 t之溫度下預烘烤 (以下稱為「PB」),並透過預定的光罩圖案暴露至光 方:在此使用之輻射的例子,可舉出深紫外光線諸如紫外光 線、KrF準分子雷射(波長:248奈米)、ArF準分子雷射(波 長奈米)準分子雷射(波長:157奈米)、或w (極鈿1外光’波長:13奈米)、帶電粒子射線諸如電子 f也,X-射線諸如同步加速器輻射,以深紫外光線及電子 ίϊίϊ:曝光條件諸如曝光量係視轄射敏感性樹脂組成 物之、、且成物、添加劑之類型等等而適當地決定。 ’、在7〇 —16〇°C下進行曝光後烘烤(以下稱為 &amp; Μ ^ ^或以上,以一致地形成具高精密度的微小光 奸=ΐ 如PEB之加熱溫度低於70 °c,則敏感度會 根據基材之類型而波動。 15二由性顯影劑在1〇一5〇。°下 下15〜100秒較佳,及在20 -2 5 °c下15-90秒又更 佳,使光阻劑顯影,而製得期望的光阻劑圖案 :水性氨、單…二-、或三-烷基胺 1 =驗性,影劑,可使用經由㈣諸如驗金屬氫氧化物 單 或三_烧 至1-10重量百I烯、或1,5—二吖雙環[4·3·0] —5—壬烯溶解 重里百刀比,以卜5重量百分比較佳,及卜3重量百C:\2D-CODE\91-09\91114303.ptd Page 113 1304060 V. INSTRUCTIONS (109) 矽 Wafer or covered aluminum wafer forms a photoresist coating and consists of a positive sensitive resin The composition (1), the positive-type radiation-sensitive resin composition (1, , and the negative-type radiation-sensitive resin composition (lil) form a photoresist pattern. Then, if necessary, the photoresist is coated at about 7 〇. - pre-baking at a temperature of 6 〇t (hereinafter referred to as "PB"), and exposing to the light side through a predetermined mask pattern: examples of radiation used herein include deep ultraviolet light such as ultraviolet light, KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength nanometer) excimer laser (wavelength: 157 nm), or w (polar 钿1 external light 'wavelength: 13 nm) , charged particle rays such as electrons f, X-rays such as synchrotron radiation, deep ultraviolet light and electrons: exposure conditions such as exposure are based on the composition of sensitive resin, and the type of additives, additives, etc. And appropriately decided. ', after 7 〇 -16 ° ° C for post-exposure baking (hereinafter referred to as For &amp; Μ ^ ^ or above, consistently form a tiny brilliance with high precision = ΐ If the heating temperature of PEB is lower than 70 °c, the sensitivity will fluctuate depending on the type of substrate. The developer is preferably 15 to 100 seconds at 1 to 5 Torr, and preferably 15 to 90 seconds at 20 to 2 5 ° C to develop the photoresist to obtain a desired photoresist. Pattern: water-based ammonia, mono-di- or tri-alkylamine 1 = inspective, shadowing agent, can be used via (iv) such as metal hydroxide, single or triple-burn to 1-10 weight percent I, or 1 , 5 - diterpene bicyclo [4 · 3 · 0] - 5 - terpene dissolved in a hundred percent ratio, preferably 5 weight percent, and 3 weight

1304060 - - «ΜΜ-Η 五、發明說明(110) 分ί:佳ΐ濃度而製備得之鹼性水溶液。 此外’可將適量的、、六 ® ^ ^ #1 ^ ^ ^ α ± IJ J ^ ^ ^ 當形成光阻劑圖案時,可將-::蒦膜:巧:中。 ί ’::止i在於環境大氣中之驗性不:ΐΐί:劑塗層 =外,可將抗反射膜設置於下層或的不利影 本發明將經由實祐如从^、, 實施例解釋為限制本發明。坪細况明。然%,不應將此等 及二t:除非特別指示,否則份及%係指重量份數 酸產j劑(I丄支免成 合成實施你丨丨 :^釜裝广:。8. 5克之二環戊二烯及322· 4克之卜溴 甲本中之浴液加至熱壓釜作為聚合抑制劑,並使混人 ?〇。(:下授拌5小時。經由在減a下在8代及25毫““ 瘵餾,將—反應產物純化而得32 6克之卜溴四氟 -2-(去曱伯-5-烯_2_基)乙烷的澄清液體(以 物U -a)」)。 々化。 接下來,將6 2克化合物(1 —a )溶解於1公升乙酸乙酯之溶 液加至2公升的茄形燒瓶中。於加入1 2克之含5%铑的氧化 鋁後’使混合物在氫大氣中劇烈攪拌3小時。然後於減壓 下將反應溶液過濾通過經覆蓋矽藻土的玻璃過濾器。將濾 mm 第115頁 C:\2D.mDE\91-09\91114303.ptd 1304060 五、發明說明(ill) ' -— ----- n'減1下’辰縮,及經由於減壓下蒸餾將縮物純化而得 液體(以下稱為「化合物(1_b)」)。 1其中之大氣經氮徹底置換的2公升三頸燒瓶裝入7〇克 亞續酸鈉及52克碳酸氫鈉溶於3〇〇毫升水之溶液。然 ί將⑽毫升之55克化合物(卜b)溶於乙腈之溶液經由於室 二下滴入1小時而加入,及使溶液在75它下反應2小時。於 使乙猜在減壓下蒸發後,加入35()毫克之二水合鎢酸鈉及 5· 0克之%酸氫一鈉。將5· 6毫升之3過氧化氫水溶液經 由=至溫下滴入而加入,同時並小心維持反應溶液之一。 ,浴液方、減反下蒸鶴以移除水,以甲醇萃取殘留物並於減 壓下蒸餾以移除甲醇,因而製得35克之〗,丨,2, 2一四氟_2一 (去曱—2 —基)乙烷磺酸鈉(以下稱為「化合物(i-c)」)。 接下來’將80克之1—正丁氧萘及212克之五氧化磷-甲磺 酉欠此合物加至5公升之茄形燒瓶,並使混合物在室溫下攪 掉15分鐘。經由在〇 t下滴入將47克之四亞曱亞砜加至混 合物’並將混合物攪拌2 〇分鐘,然後將混合物之溫度逐漸 提南至室溫。將混合物再多攪拌1小時。將混合物再次冷 卻至G °C °於加入2公升水並使用25°/。水性氨將pH調整至7β 〇 之後’將混合物在室溫下攪拌1小時。於加入1 1 6克之化合 物(1 - c )溶於1 5 0毫升水之溶液後,將混合物再在室溫下多 攪拌1小時。以二氯曱烷萃取反應溶液,並以水洗滌萃取 液。使二氯曱烷於減壓下蒸發,並使用矽膠管柱(二氯甲燒 :曱醇=2 0 : 1 )將殘留物純化。經由使用二氣曱烷/正己燒1304060 - - «ΜΜ-Η V. Description of invention (110) ί: An alkaline aqueous solution prepared by the concentration of ΐ. In addition, the appropriate amount of , six ® ^ ^ #1 ^ ^ ^ α ± IJ J ^ ^ ^ when forming a photoresist pattern, can be -:: 蒦 film: Qiao: medium. ί ':: stop i is in the ambient atmosphere: ΐΐί: agent coating = outside, the anti-reflective film can be placed in the lower layer or the adverse effects of the present invention will be explained by the example of this invention. Ping fine conditions. However, % should not be equal to this and two t: Unless otherwise indicated, the parts and % refer to the parts by weight of the acid production agent (I 丄 免 成 合成 合成 合成 合成 合成 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The bath of dicyclopentadiene and 322·4 g of bromomethyl is added to the autoclave as a polymerization inhibitor, and the mixture is mixed. (: The next mixing is 5 hours. 8 generations and 25 milli"" retort, the reaction product was purified to obtain 32 6 grams of bromotetrafluoro-2-(dehydrourethane-5-ene-2-yl)ethane clear liquid (by U- a)"). Next, a solution of 62 g of the compound (1-a) dissolved in 1 liter of ethyl acetate was added to a 2 liter eggplant-shaped flask, and 12 g of 5% hydrazine was added. After the alumina, the mixture was vigorously stirred in a hydrogen atmosphere for 3 hours. The reaction solution was then filtered under reduced pressure through a glass filter covered with diatomaceous earth. Filter mm Page 115 C:\2D.mDE\91- 09\91114303.ptd 1304060 V. Inventive Note (ill) '-- ----- n' minus 1 'shrinking, and purifying the reduced product by distillation under reduced pressure (hereinafter referred to as "compound" (1_b)") 1 of which A 2 liter three-necked flask in which the atmosphere was completely replaced by nitrogen was charged with 7 g of sodium sulfite and 52 g of sodium hydrogencarbonate dissolved in 3 ml of water. Then, (10) ml of 55 g of compound (b b) was dissolved. The solution of acetonitrile was added by dropwise addition to the chamber for 1 hour, and the solution was allowed to react at 75 ° for 2 hours. After evaporating under reduced pressure, 35 () mg of sodium tungstate dihydrate and 5% of the acid monohydrogen soda. Add 5.6 ml of 3 aqueous hydrogen peroxide solution by adding dropwise to the temperature, while carefully maintaining one of the reaction solutions. The water was removed, the residue was extracted with methanol and distilled under reduced pressure to remove methanol, thus yielding 35 g of yt, 2, 2,4-tetrafluoro-2-mono(de-indol-2-yl)ethanesulfonic acid Sodium (hereinafter referred to as "compound (ic)"). Next, '80 g of 1-n-butoxynaphthalene and 212 g of phosphorus pentoxide-methanesulfonate are added to a 5 liter eggplant-shaped flask, and The mixture was stirred at room temperature for 15 minutes. 47 g of tetradecylene sulfoxide was added to the mixture by dropping in 〇t and the mixture was stirred for 2 minutes. Then, the temperature of the mixture was gradually increased to room temperature. The mixture was further stirred for 1 hour. The mixture was again cooled to G ° C ° after adding 2 liters of water and adjusting the pH to 7β 25 using 25 ° / aqueous ammonia. 'The mixture was stirred at room temperature for 1 hour. After adding 1 16 g of the compound (1-c) to a solution of 150 ml of water, the mixture was further stirred at room temperature for 1 hour. The reaction solution was extracted with an alkane, and the extract was washed with water. The methylene chloride was evaporated under reduced pressure, and the residue was purified using a silica gel column (dichloromethane: decyl alcohol = 20:1). By using dioxane / hexane

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1304060 五、發明說明(112) ' ' -- 再沈澱,而製得76克之1,1,2,2 -四氟-2-(去曱葙―2 —基)乙 磺酸1,4 -伸丁基正丁氧萘_4—基)_。 此化合物之1 H-NMR分析結果示於圖1。陽離子基團及陰 離子基團之質量分析結果分別示於圖2及3。 將此化合物稱為「酸產生劑(A_丨)」。 酸產生劑(A-1)及以下之酸產生劑(A —2)至(A —6)之質量 分析係根據以下條件進行: 、 裝置:JMS-AX5 05W質量光譜計(JEOL,Ltd·製造) 發射器電流·· 5毫安培(使用氣體·· Xe) 加速電壓:3 · 〇仟伏特 ION MULTI : 1. 3 離子化方法:快速原子轟擊(FAB) 偵測離子:陽離子(+ ) 測量質量範圍:20-1500m/z 掃描:3 G秒 解析度:1 5 0 0 基質:3 -石肖基苯甲醇 合成實施例2 將2公升之蘇形燒瓶裴入2〇克氣化三苯统溶於5〇〇毫升水 之溶液。經由在室溫下滴入加入5 〇 〇毫升之含2 〇克化合物 (1 -d)的水溶液,及使混合物攪拌3〇分鐘。以乙酸乙二萃 取反應溶液,及使用水將有機層洗滌兩次。經由在減壓下 蒸館ί辰縮溶液’而製得1 6克之1,1,2,2 _四氟-2 -(去甲在一 2 基)乙石κ酸二本的澄清高黏性油。此化合物之u M R分1304060 V. INSTRUCTIONS (112) ' ' -- Reprecipitation, and obtained 76 grams of 1,1,2,2-tetrafluoro-2-(dehydro-2-yl)ethanesulfonic acid 1,4 - Butyl n-butoxynaphthalene _4-base). The results of 1 H-NMR analysis of this compound are shown in Fig. 1. The mass analysis results of the cationic group and the anionic group are shown in Figures 2 and 3, respectively. This compound is referred to as "acid generator (A_丨)". The mass analysis of the acid generator (A-1) and the following acid generators (A-2) to (A-6) was carried out according to the following conditions: Apparatus: JMS-AX5 05W mass spectrometer (manufactured by JEOL, Ltd.) ) Transmitter current · · 5 mA (using gas · · Xe ) Accelerating voltage : 3 · 〇仟 ION MULTI : 1. 3 Ionization method : Fast atom bombardment (FAB ) Detecting ions : cation ( + ) Measurement quality Range: 20-1500 m/z Scan: 3 G seconds Resolution: 1 5 0 0 Matrix: 3 - Shisaki Benzyl Alcohol Synthesis Example 2 2 liters of the Soviet-shaped flask was poured into 2 g of gasified triphenylbenzene dissolved in 5 〇〇ml of water solution. An aqueous solution containing 2 gram of the compound (1 -d) was added dropwise thereto at room temperature, and the mixture was stirred for 3 minutes. The reaction solution was extracted with ethyl acetate and the organic layer was washed twice with water. The clarification and high viscosity of 1,6 g of 1,1,2,2 _tetrafluoro-2 -(nor-on- 2 -yl)-ethene κ acid was obtained by steaming the solution under reduced pressure. oil. u M R of this compound

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第117頁 1304060 五、發明說明(113)Page 117 1304060 V. Description of invention (113)

析結果示於圖4。陽離子其囿u队A 果分別示於圖5及6。基團及陰離子基團之質量分析結 將此化合物稱為「酸產生劑(A - 2 )。 合成實施例3 」。 將2公升之痴形燒瓶裝入2 \ 々 溶液。、經由在室溫下滴入加入容於1公升水之 U-c)的水溶液’及使混合物含20克化合物、 遽通過玻璃過濾器,以水充分見 ' 刀知二將β沈積,。體過 12克之1,1,2,2-四氟-2_(去;葙';’5:=下乾燥而得 ^ °之黯分析結果示於圖7。陽離子基團及_ 離子基團之質量分析結果分別示於圖8及9。 陰 將此化合物稱為「酸產生劑(Α — 3 )。 合成實施例4 將其=之大氣經氮徹底置換的2 二硫亞續酸納及52克碳酸氫納溶糊毫升水之溶液。; 30 0毫升之55克化合物(1.)、、六认7★ 收 將 滴入!小時而力…及使:::/7夂之化液經由於室溫下 叹便此合物在75 °C下反應2小時。於佶 乙腈在減壓下蒸發後,卩乙酸乙酷萃取反應溶液。將有: 層以飽和鹽水洗條,並於無水硫酸鎂上乾燥 於減壓下蒸發而得35克之1,1,2, 2-四氟-2-(去甲箱—2_基 乙烷磺酸鈉(以下稱為「化合物(1— )。 接下來’將2公升之蘇形燒航裳入8〇克化合物(η)溶於 2—50毫升水之溶液。邊於室溫下攪拌,邊以多餘的氯氣使 浴液發泡多於1 5分鐘。以二氯甲烷萃取於燒瓶底部收集得The results of the analysis are shown in Fig. 4. The cations of the 囿u team A are shown in Figures 5 and 6, respectively. Mass analysis of the group and the anionic group This compound is referred to as "acid generator (A-2). Synthesis Example 3". A 2 liter incised flask was placed in a 2 \ 溶液 solution. The β aqueous solution was added to the mixture by adding an aqueous solution of U-c) containing 1 liter of water at room temperature and passing the mixture to 20 g of the compound and ruthenium through a glass filter. The results of the analysis of 12 gram of 1,1,2,2-tetrafluoro-2_(de; 葙'; '5:= under dryness are shown in Fig. 7. Cationic group and _ ionic group The results of the mass analysis are shown in Figures 8 and 9, respectively. The compound is referred to as "acid generator (Α-3). Synthesis Example 4 2 thiodithioate and 52 which are completely replaced by nitrogen in the atmosphere = 52 a solution of gram of sodium bicarbonate in a solution of milliliters of water; 30 ml of 55 g of compound (1.), and six recognizable 7 ★ will be dripped into the hour and force... and make:::/7夂 of the chemical solution The mixture was reacted at 75 ° C for 2 hours at room temperature. After the acetonitrile was evaporated under reduced pressure, the reaction solution was extracted with acetic acid. The layer was washed with saturated brine and dried over anhydrous sulfuric acid. The magnesium was dried and evaporated under reduced pressure to give 35 g of 1,1,2,2-tetrafluoro-2-(sodium-decarboxyl-2-ylethanesulfonate (hereinafter referred to as "compound (1 - ). Down, '2 liters of sulphate into a solution of 8 gram of compound (η) dissolved in 2-50 ml of water. Stir at room temperature, foam more than 1 5 with excess chlorine. Minutes to methylene chloride Take on the bottom of the flask collected

1304060 五、發明說明(114) 的油狀物質。將有機層以碳酸氫納水溶液洗〉條,並於無水 硫酸鎂上乾燥。使二氯甲烧於減壓下蒸發而得6 8克之1,1, 2, 2 -四氟-2-(去甲篇1 -2 -基)乙磺醯氯(以下稱為「化合物 (4-a)」)。 接下來’於將22克之N-輕基-5-去甲箱烯—2,3 -二叛酸亞 月女加至3 0克化合物(4 - a)溶於1 5 〇克四氫σ夫喃之溶液中後, 經由滴入將2 9克之三乙胺加至混合物。於使反應溶液在室 溫下攪拌1 0分鐘後,經由滴入加入水,而得反應產物之白 色晶體。於過濾之後,將晶體溶解於二氯甲烷,並以碳酸 氫鈉水溶液、草酸水溶液、及水連續洗滌溶液。於將溶液 在無水硫酸鎮上乾燥之後,使二氯甲烷於減壓下蒸發而得 35克之?^-(1,1,2,2-四氟-2-(去曱肩-2-基)乙磺醯氧)-5- 去甲®烯- 2,3 -二羧醯亞胺。 圖10顯示此化合物之iH — nmr分析結果。 將此化合物稱為「酸產生劑(A _ 4 )」。 合成實施例5 將熱壓釜裝入108.5克之二環戊二烯及322·4克之卜溴-1,1二2,2-=氣-3 - 丁烯。將0·3克之4一曱氧酚溶解於5毫升 曱苯中之/谷、液加至熱壓釜作為聚合抑制劑,並使混合物在 170^C下攪拌5小時。經由在減壓下在85艺及〇· j毫米汞柱 下瘵餾,將反應產物純化而得226克之卜溴-丨,丨,2, 2—四氟 -2-(四環[4.4.0.12,5.17,1〇]十二烷-3—烯—8_基)乙烷的澄 液體(以下稱為「化合物(5 —a)」)。 接下來,將9 3克化合物(5 — a)溶解於丨· 5公升乙酸乙酯之1304060 V. Oily substance of invention (114). The organic layer was washed with a sodium hydrogencarbonate aqueous solution and dried over anhydrous magnesium sulfate. The methylene chloride was evaporated under reduced pressure to obtain 6 8 g of 1,1,2,2-tetrafluoro-2-(nor-methyl-1-yl)ethanesulfonyl chloride (hereinafter referred to as "compound (4). -a)"). Next, '22 g of N-light-based-5-nor-boxene- 2,3-dioxalic acid sub-monthly female to 30 g compound (4-a) dissolved in 1 5 g of tetrahydro-sigma After the solution was stirred, 29 g of triethylamine was added to the mixture via dropwise addition. After the reaction solution was stirred at room temperature for 10 minutes, water was added dropwise thereto to obtain a white crystal of the reaction product. After filtration, the crystals were dissolved in dichloromethane, and the solution was successively washed with an aqueous sodium hydrogencarbonate solution, an aqueous oxalic acid solution, and water. After the solution was dried over anhydrous sulphuric acid, dichloromethane was evaporated under reduced pressure to give &lt;RTI ID=0.0&gt;&gt; Ethylene sulfonate)-5-nor-methene-2,3-dicarboxyarmine. Figure 10 shows the results of iH-nmr analysis of this compound. This compound is referred to as "acid generator (A _ 4 )". Synthesis Example 5 An autoclave was charged with 108.5 g of dicyclopentadiene and 322.4 g of bromo-1,1,2,2-dimethyl-3-butene. 0. 3 g of 4-oxophenol was dissolved in 5 ml of benzene in benzene, and the solution was added to a autoclave as a polymerization inhibitor, and the mixture was stirred at 170 ° C for 5 hours. The product was purified by distillation under reduced pressure at 85 ° C and J mm Hg to give 226 g of bromo-indole, hydrazine, 2,2-tetrafluoro-2-(tetracyclic [4.4.0.12] , 5.17, 1 〇] dodecane-3-ene-8-yl) ethane liquid (hereinafter referred to as "compound (5 - a)"). Next, 93 g of the compound (5-a) was dissolved in 丨·5 liter of ethyl acetate.

第119頁 1304060 五、發明說明(115) 溶液加至3公升的茄形燒瓶中。於加入1 8克之含5 %铑的氧 化鋁後,使混合物在氫大氣中劇烈攪拌3小時。然後於減 壓下將反應溶液過濾通過經覆蓋矽藻土的玻璃過濾器。將 濾液於減壓下濃縮,及經由於減壓下蒸餾將濃縮物純化而 得 85 克之 1-溴-1,1,2,2-四氟- 2- (四環[4. 4· 0· I2,5· 17,丨°]十 二烧-8 -基)乙烷的澄清液體(以下稱為「化合物(5 - b )」) 將其中之大氣經氮徹底置換的2公升三頸燒瓶裝入1 〇. 2 克一硫亞確酸納及7 · 4克碳酸氮納溶於1 7 〇毫升水之溶液。 然後將1 0克之化合物(5 - b )&gt;谷於7 5 0毫升乙猜之溶液經由於 室溫下滴入1小時而加入,及使溶液在丨〇 〇下反應7小 時。於使乙腈沈殿後’將水溶液過濾’並將濾液於減壓下 濃縮。以曱醇萃取殘留物並於減壓下蒸餾以移除曱醇,因 而製得10.2克之1,1,2,2-四氟_2-(四環[4.4.〇12,517’1〇] 十二烧-8 -基)乙烷亞磺酸鈉(以下稱為「化合物(5-c) 接下來,將500毫升之三頸燒瓶裝入9克化合物(5_c)溶 於75毫升水之溶液。加入50毫克之二水合鎢酸鈉及】2克 之磷酸氫二鈉。將3毫升之30%過氧化氫水溶液經由於室加 下滴入而加入,同時並小心維持反應溶液之邱。使混厶= 在6(TC下反應Η'時’加WOO毫升水,並使混合物冷: 室溫。然後經由於室溫下滴入加入1〇克氣化三笨硫溶於 250毫升水之溶液,並使反應溶液攪拌}小時。接下、 乙酸乙酿萃取反應溶液,並使用水將有機層洗滌三次。將Page 119 1304060 V. INSTRUCTIONS (115) The solution is added to a 3 liter eggplant-shaped flask. After 18 g of 5% cerium oxide containing aluminum oxide was added, the mixture was vigorously stirred in a hydrogen atmosphere for 3 hours. The reaction solution was then filtered under reduced pressure through a glass filter covered with diatomaceous earth. The filtrate was concentrated under reduced pressure, and the concentrate was purified by distillation under reduced pressure to give 85 g of 1-bromo-1,1,2,2-tetrafluoro- 2- (tetracyclo[4. 4·0· I2,5·17,丨°] 12-burn-8-yl) ethane clear liquid (hereinafter referred to as "compound (5 - b)") A 2 liter three-necked flask in which the atmosphere is completely replaced by nitrogen. Into 1 〇. 2 g of monothiosodium hydride and 7.4 g of sodium bicarbonate dissolved in 1 7 ml of water. Then, 10 g of the compound (5 - b ) &gt; solution was added to the solution of 750 ml of B-epi by dropwise addition at room temperature for 1 hour, and the solution was allowed to react under hydrazine for 7 hours. After acetonitrile was allowed to stand, the aqueous solution was filtered and the filtrate was concentrated under reduced pressure. The residue was extracted with decyl alcohol and distilled under reduced pressure to remove sterol, thus yielding 10.2 g of 1,1,2,2-tetrafluoro-2-(tetracyclo[4.4.〇12,517'1〇] twelve Sodium 8-ethyl sulfinate (hereinafter referred to as "compound (5-c)) Next, a 500 ml three-necked flask was charged with a solution of 9 g of the compound (5-c) dissolved in 75 ml of water. 50 mg of sodium tungstate dihydrate and 2 g of disodium hydrogen phosphate. Add 3 ml of 30% aqueous hydrogen peroxide solution by adding dropwise to the chamber while carefully maintaining the reaction solution. Add 60 ml of water at 6 (TC Η ', and let the mixture cool: room temperature. Then add 1 g of gasified trisulphur in 250 ml of water and add dropwise to the solution at room temperature. The reaction solution was stirred for 1 hour. Next, the reaction solution was extracted with acetic acid, and the organic layer was washed three times with water.

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第120頁 1304060 五、發明說明(116) 乙酸乙酯於減壓下移除,並使用矽膠管柱(二氯甲烷··甲 醇二8 ·· 1 )將殘留物純化而得丨克之丨,〗,2, 2—四氟-2 —(四環 [4· 4· 0· 1 ’ · 1’’ig ]十二烷—8—基)乙磺酸三苯就。 此化a物之H-NMR分析結果示於圖11。陽離子基團及陰 離子基團之質量分析結果分別示於圖丨2及〗3。 將此化合物稱為「酸產生劑(A — 5 )」。 合成實施例6 將2公升之茄形燒瓶裝入25. 2克碳酸氫鈉溶於5⑽毫 之溶:。邊將溶液於室溫下攪拌,邊經由滴入加入B 之乙酸2-(亂磺醯基)二氟甲酯。然後將混合於^ 1 · 多攪拌2小時,隨後於減壓下將水基 σ ;至^下再 办中名宮、、w 弘π — 、、 使所付固體於直 工中在至皿下乾煉隔伏,經由以2〇〇毫升甲醇 ” 化,並於真空中在室溫下乾燥而得〇· 34克之甲 其一# 曱烷磺酸鈉(以下稱為「化合物(6 - a )」)。 厌土 一氟 接下來’將〇 · 4 78克氣化三苯槐溶於5毫升水六 0.34克化合物(6 — a)溶於15毫升水之溶液中。以合真文加至 酸乙酯將此混合溶液萃取兩次。將有機層以2〇毫升£升乙 務,並於無水硫酸納上乾燥。經由於減壓下蒸發 ^ 酉旨移除,及將殘留物於真空中乾燥而得〇 25 i :丄乙酸乙 及油狀的曱氧羰基二氟曱磺酸三苯旅。 而度勒性 此化合物之陽離子基團及陰離子基團之 別示於圖14及15。 貝里刀析結果分 將此化合物稱為「酸產生劑(A — 6 )」。 合成實施例7Page 120 1304060 V. INSTRUCTIONS (116) Ethyl acetate was removed under reduced pressure, and the residue was purified using a silica gel column (dichloromethane·methanol 2 8 ··1) , 2, 2-tetrafluoro-2 —(tetracyclo[4·4· 0· 1 ' · 1''ig ] dodecane-8-yl) triphenyl sulfonate. The results of H-NMR analysis of this compound are shown in Fig. 11. The mass analysis results of the cationic group and the anionic group are shown in Fig. 2 and Fig. 3, respectively. This compound is referred to as "acid generator (A-5)". Synthesis Example 6 A 2 liter eggplant-shaped flask was charged with 25.2 g of sodium hydrogencarbonate dissolved in 5 (10) mM. While stirring the solution at room temperature, 2-(oxasulfonyl)difluoromethyl acetate of B was added dropwise thereto. Then mix it with ^ 1 · stir for 2 hours, then reduce the water base σ under reduced pressure; then go to the middle name palace, w hong π — , and make the solids in the straight work Drying the partition, passing through 2 ml of methanol, and drying in a vacuum at room temperature to obtain 〇·34 g of 甲其一# sodium decane sulfonate (hereinafter referred to as "compound (6 - a) "). Back soil, monofluoride Next, ’ 4 78 g of gasified triphenyl hydrazine was dissolved in 5 ml of water 6. 0.34 g of compound (6-a) was dissolved in 15 ml of water. This mixed solution was extracted twice with hydrazine to ethyl acetate. The organic layer was taken up in 2 mL of EtOAc and dried over anhydrous sodium sulfate. The product was removed by evaporation under reduced pressure, and the residue was dried in vacuo to give </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; Further, the cationic group and the anionic group of the compound are shown in Figs. 14 and 15. The results of the Berry knife analysis are referred to as "acid generator (A-6)". Synthesis Example 7

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氟-2-(去曱伯-2 -基)乙磺酸卜(4 —羥基—3, 5 將2公升之祐形燒瓶裝入2〇克之甲續酸卜(4_經基_3,5_ -曱基苯基)四氫嘴吩颂溶於5〇〇毫升水之溶液。將5〇〇毫 升之含20克化合物(l-c)之水溶液經由於室溫下滴入而加 =及使混合物授拌15分鐘。將沈殿晶體過濾通過玻璃過 慮:,並溶解於二氯甲烧中。經由滴入將溶液加至己烧, :侍白色澱物。將生成沈澱物再次過濾通過玻璃過濾 :二亚收术。#收集得之固體溶解於丙酮,並經由滴入將 :液力口至纟’而得白色沈澱物。將沈澱物再次過濾通過玻 璃過濾器,收集,並於減壓下乾燥而得“克之丨,丨,2, 2 —四 n -ti· \ — αχ _. ^ 5 J 5 四氫噻吩當| 二曱基苯基) 圖1 6顯示此化合物之1H-NMR分析結果。 將此化合物稱為「酸產生劑(A — 7 )」。 金成貫施例8 a將2公升之茄形燒瓶裝入2〇克之化合物(1—c)溶於丨, 名升之甲醇/水(7 0 / 3 0 )混合溶劑之溶液。邊於室溫下擾 拌溶液,邊經由滴入加入36克之硫酸雙(4—第三丁苯基)見雔 溶於1公升曱醇之溶液。然後將混合物在室溫下再多^拌f 小%,並靜置1天。以二氯甲烷萃取反應溶液中之有機物 質。將有機層以水洗滌,並於無水硫酸鎂上乾燥。將產物 溶解於二氯曱烷中,並經由滴入將溶液加至己垸,而得白 色體。將晶體過滤通過玻璃過滤器,並於減壓下乾燥而 得18克之1,1,2, 2 -四氟-2-(去曱彳嘗-2 -基)乙磺酸雙(4广第 二丁苯基)鐵。圖1 7顯示此化合物之1 Η - N M R分析結果。Fluor-2-(dehydro-2-yl)ethanesulfonate (4-hydroxy-3, 5) 2 liters of flask shaped into 2 gram of sucrose (4_经基_3,5_ - mercaptophenyl) tetrahydrofuran is dissolved in 5 ml of water. 5 ml of an aqueous solution containing 20 g of compound (lc) is added dropwise at room temperature to add and give the mixture Mix for 15 minutes. Filter the crystal of the chamber through the glass: and dissolve in the methylene chloride. Add the solution to the hexane by dropwise addition: Wait for the white precipitate. The precipitate will be filtered again through the glass filter: The collected solid is dissolved in acetone, and a white precipitate is obtained by dropping into the hydraulic port to the crucible. The precipitate is again filtered through a glass filter, collected, and dried under reduced pressure. "克之丨,丨,2,2—four n -ti· \ — αχ _. ^ 5 J 5 tetrahydrothiophene | dimercaptophenyl) Figure 16 shows the results of 1H-NMR analysis of this compound. The compound is referred to as "acid generator (A-7)". Jin Chengjing Example 8 a A 2 liter eggplant-shaped flask was charged with 2 g of the compound (1-c) in a solution of a methanol/water (70/30) mixed solvent. While stirring the solution at room temperature, 36 g of bis(4-t-butylphenyl) sulfate was added via dropwise addition to a solution of 1 liter of decyl alcohol. The mixture was then mixed at room temperature for a small % and allowed to stand for 1 day. The organic matter in the reaction solution was extracted with dichloromethane. The organic layer was washed with water and dried over anhydrous magnesium sulfate. The product was dissolved in dichloromethane, and the solution was added to the oxime via dropwise addition to obtain a white body. The crystal was filtered through a glass filter and dried under reduced pressure to obtain 18 g of 1,1,2,2-tetrafluoro-2-(de-t-butyl-2-yl)ethanesulfonic acid bis (4 wide second Butyl phenyl) iron. Figure 1 7 shows the results of the 1 Η - N M R analysis of this compound.

1304060 - ~— —_ 五、發明說明(118) 將此化合物稱為「酸產生劑(A-8)」。1304060 - ~ - -_ V. Description of the Invention (118) This compound is referred to as "acid generator (A-8)".

盒酸可裂之樹脂之厶忐 合成實施例Q 一將克之4-乙醯氧苯乙烯、5克之苯乙烯、42克之4 一第 二丁氧笨乙稀、6克之偶氮雙異丁腈(AIBN)、及1克之第三 -十一基硫醇溶解於丨6 〇克之丙二醇單曱醚中。使混合物在 7 0 C下於氮大氣中聚合丨6小時。於聚合後,將反應溶液逐 滴加至大量的正己烷中,以使生成樹脂凝聚及純化。 於將1 5 0克之丙二醇單甲醚加至樹脂後,加入3 〇 〇克之曱 酉手、8 0克之三乙胺、及丨5克之水。邊於沸點下迴流,邊使 混合物水解8小時。於反應後,將溶劑及三乙胺於減壓下 条發。將生成樹脂溶解於丙酮,並將溶液逐滴加至大量的 水中’以使樹脂凝聚。將生成之白色粉末過濾,並於5〇 〇c 下在減壓下乾燥隔夜。 測得樹脂分別具有16, 〇〇〇及1. 7之Mw及Mw/Mn。13C_NMR分 析結果證實共聚物之4-羥苯乙烯、苯乙烯、及4-第三丁氧 苯乙烯之共聚合莫耳比為72:5:23。 將此樹脂稱為「樹脂(B - 1 )」。 樹脂(B-1 )及以下之樹脂(B-2)至(B-13)之Mw及Μη係利用 凝膠滲透層析術(GPC)使用GPC管柱(Tosoh Corρ.製造, G2 0 0 0HXL X 2,G3 0 0 0HXL X 1,G4 0 0 0HXL X 1)在以下條件下 測置。流速:1 · 〇毫升/分鐘,洗提液:四氫咬喃,管柱 溫度:4 0 °C,標準參考物質:單分散聚苯乙烯。 合成實施例1 0厶忐 Synthesis of box acid crackable resin Example Q 1 gram of 4-acetoxystyrene, 5 grams of styrene, 42 grams of 4 a second butoxide oxygen, 6 grams of azobisisobutyronitrile ( AIBN), and 1 gram of the third-undecyl mercaptan are dissolved in 丙6 gram of propylene glycol monoterpene ether. The mixture was polymerized in a nitrogen atmosphere at 70 C for 6 hours. After the polymerization, the reaction solution was added dropwise to a large amount of n-hexane to coagulate and purify the resulting resin. After adding 150 grams of propylene glycol monomethyl ether to the resin, 3 〇 〇 曱 酉 、 hand, 80 grams of triethylamine, and 5 grams of water were added. The mixture was hydrolyzed for 8 hours while refluxing at the boiling point. After the reaction, the solvent and triethylamine were stripped under reduced pressure. The resulting resin was dissolved in acetone, and the solution was added dropwise to a large amount of water to agglomerate the resin. The resulting white powder was filtered and dried under reduced pressure at 5 〇 〇 c overnight. The Mw and Mw/Mn of 16, 〇〇〇 and 1.7, respectively, were measured. The results of 13C_NMR analysis confirmed that the copolymer had a copolymerized molar ratio of 4-hydroxystyrene, styrene, and 4-tert-butoxystyrene of 72:5:23. This resin is referred to as "resin (B - 1 )". Mw and Μ of the resin (B-1) and the following resins (B-2) to (B-13) were subjected to gel permeation chromatography (GPC) using a GPC column (manufactured by Tosoh Corρ., G2 0 0HXL) X 2, G3 0 0 0HXL X 1, G4 0 0 0HXL X 1) Measured under the following conditions. Flow rate: 1 · 〇 ml / min, eluent: tetrahydroanthracene, column temperature: 40 ° C, standard reference material: monodisperse polystyrene. Synthesis Example 1 0

C:\2D-TODE\91-09\91114303.ptd 第123頁 1304060 五、發明說明(119) 將100克之4-乙醯氧苯乙烯、25克之丙烯酸第三丁酯、 18克之苯乙烯、6克之A IBN、及1克之第三-十二基硫醇溶 解於2 3 0克之丙二醇單曱醚中。使混合物在7 〇 下於氮大 氣中聚合1 6小時。於聚合後,將反應溶液逐滴加至大量的 己烷中,以使生成樹脂凝聚及純化。 於將1 5 0克之丙二醇單曱醚加至樹脂後,加入3 〇 〇克之曱 醇、8 0克之二乙胺、及1 5克之水。邊於沸點下迴流,邊使 混合物水解8小時。於反應後,將溶劑及三乙胺於減壓下 蒸發。將生成樹脂溶解於丙酮,並將溶液逐滴加至大量的 水中’以使樹脂凝聚。將生成之白色粉末過濾,並於5 〇 〇c 下在減壓下乾燥隔夜。 測得樹脂分別具有11,50 0及1 · 6之Mw及Mw/Mn。13C-NMR分 析結果5且貝共聚物之4 -經苯乙稀、丙稀酸第三丁酿、及苯 乙稀之共聚合莫耳比為61:19:20。 將此樹脂稱為「樹脂(B —2)」。 合成實施例11 使176克之4-第三丁氧苯乙烯在-78下於5〇〇毫升四氫 呋喃中使用正丁基鋰作為催化劑而陰離子聚合。於聚合 後’使生成之樹脂溶液於曱醇中凝聚而得丨5 〇克之白色聚 (4-第三丁氧苯乙烯)。 將150克之鬈(4_第二丁氧笨乙烯)溶解於6〇〇克之二氧陸 圜中。於加入稀氫氣酸後,使混合物在7〇 t下水解2小 時。將反應產物逐滴加至大量水中,因而使樹脂凝聚。重 複將生成樹脂溶解於丙S同,並逐滴加至大量水中,以使樹C:\2D-TODE\91-09\91114303.ptd Page 123 1304060 V. INSTRUCTIONS (119) 100 g of 4-ethoxixystyrene, 25 g of tributyl acrylate, 18 g of styrene, 6 Ake IBN, and 1 gram of the third-dodecylmercaptan are dissolved in 230 grams of propylene glycol monoterpene ether. The mixture was polymerized in nitrogen atmosphere at 7 Torr for 16 hours. After the polymerization, the reaction solution was added dropwise to a large amount of hexane to coagulate and purify the resulting resin. After adding 150 g of propylene glycol monoterpene ether to the resin, 3 gram of sterol, 80 g of diethylamine, and 15 g of water were added. The mixture was hydrolyzed for 8 hours while refluxing at the boiling point. After the reaction, the solvent and triethylamine were evaporated under reduced pressure. The resulting resin was dissolved in acetone, and the solution was added dropwise to a large amount of water to agglomerate the resin. The resulting white powder was filtered and dried under reduced pressure at 5 〇 〇 c overnight. The resins were found to have Mw and Mw/Mn of 11,50 0 and 1.6, respectively. The results of 13C-NMR analysis showed that the copolymerized molar ratio of 4-benzazole copolymer 4, styrene, acrylic acid, and styrene was 61:19:20. This resin is referred to as "resin (B-2)". Synthesis Example 11 176 g of 4-tert-butoxystyrene was anionically polymerized at -78 in 5 ml of tetrahydrofuran using n-butyllithium as a catalyst. After the polymerization, the resulting resin solution was coagulated in decyl alcohol to obtain 5 g of white poly(4-tert-butoxystyrene). 150 g of hydrazine (4_2,2,2-butoxyethylene) was dissolved in 6 g of dioxin. After the addition of dilute hydrogen acid, the mixture was hydrolyzed at 7 ° t for 2 hours. The reaction product was added dropwise to a large amount of water, thereby agglomerating the resin. Repeatly dissolving the resulting resin in C-S and adding it to a large amount of water to make the tree

1304060 五、發明說明(120) &quot;&quot; 1一&quot; 月曰凝聚之步驟。將生成之白色粉末過濾,並在5 於減舞 下乾燥隔夜。 i 此樹脂之Mw及Mw/Mn分別為1 0, 4 0 0及1· 10。—NMR分析 證實聚(4-第三丁氧苯乙烯)中僅有部分的第三丁基具有水 解結構,且4-第三丁氧苯乙烯及4-羥苯乙烯之莫耳比為 6 8:32。 、 ”、 將此樹脂稱為「樹脂(B- 3 )」。 合成實施例]2 將25克之4-羥苯乙烯及4-第三丁氧苯乙烯之共聚物(共 聚合莫耳比,9 0 : 1 0 )溶解於1 〇 〇克之乙酸正丁酯中。使礼 氣發泡通過溶液3 0分鐘。於加入3 · 3克之乙基乙稀基鱗及i 克之作為催化劑的對甲苯磺酸吡啶後,使混合物在室溫下 反應1 2小時。將反應溶液逐滴加至1 %銨水溶液,以使樹月匕 凝聚。將樹脂過濾,並於真空乾燥器中在5 〇 °c下乾燥隔 夜。 、 此樹脂之Mw及Mw/Mn分別為1 3, 0 0 0及1. 〇1。由uc —NMR分 析之結果,測得樹脂具有聚(4-羥苯乙烯)中之酚經基之77氣 原子的2 3莫耳百分比經乙氧乙基取代,及丨〇莫耳百分比= 第三丁基取代的結構。 ί 將此樹脂稱為「樹脂(β - 4 )」。 合成實方包 &lt;列1 3 將5克之去甲為稀、11克之順丁細二酸酐、11克之8 —声 基四環[4.4.0.12’5.17’1〇]十二;):完_3-稀、及23克之甲基丙稀 酸2 -曱基- 2 -金剛烷酯溶解於5 0克之四氫呋喃中,而得均1304060 V. Invention Description (120) &quot;&quot;1&quot; The resulting white powder was filtered and dried overnight under 5 dances. i The Mw and Mw/Mn of the resin are 10, 400 and 1.0, respectively. NMR analysis confirmed that only a portion of the third butyl group in the poly(4-tert-butoxystyrene) has a hydrolyzed structure, and the molar ratio of 4-t-butoxystyrene and 4-hydroxystyrene is 6 8 :32. "," This resin is called "resin (B-3)". Synthesis Example] 2 25 g of a copolymer of 4-hydroxystyrene and 4-tert-butoxystyrene (copolymerized molar ratio, 90:10) was dissolved in 1 gram of n-butyl acetate. Allow the atmosphere to foam through the solution for 30 minutes. After adding 3 · 3 g of ethyl ethyl squarate and i g of p-toluenesulfonic acid pyridine as a catalyst, the mixture was allowed to react at room temperature for 12 hours. The reaction solution was added dropwise to a 1% aqueous ammonium solution to cause agglomeration of the tree. The resin was filtered and dried overnight at 5 ° C in a vacuum desiccator. 〇1。 The Mw and Mw/Mn of the resin are 1, 3, 0 0 and 1. 〇1, respectively. From the results of uc-NMR analysis, it was determined that the resin had a molar ratio of 23 valence of 77 phenols in the poly(4-hydroxystyrene) group via ethoxyethyl group, and the percentage of 丨〇mol = Tributyl substituted structure. ί This resin is called "resin (β - 4 )". Synthetic solid package &lt;column 1 3 5 g of the norm is diluted, 11 g of cis-butylic acid anhydride, 11 g of 8 - sono-based tetracyclic [4.4.0.12'5.17'1〇] twelve;): End _ 3-dilute, and 23 g of methyl methacrylate 2-mercapto-2-adamantyl ester is dissolved in 50 g of tetrahydrofuran, and the average

1304060 五 、發明說明(121) 勾/谷’夜。於〉主入氮氣3 0分鐘後,加入3克之A IBN。將混合 物加熱至6 5 °C,並於此溫度下攪拌6小時。於聚合後,使 ^應溶液冷卻至室溫,並以50克之四氫呋喃稀釋。將稀釋 溶液倒入至1,⑽〇毫升之正己烷中。經由過濾收集沈澱的 白色粉末,並乾燥而得樹脂。 此樹脂係具有去甲蓓烯··順丁烯二酸酐·· 8 -羥基四環 [4·4·0·12’5·17’10]十二烷-3-烯··曱基丙烯酸2 -曱基-2-金 剛炫醋=1 5 ·· 3 5 ·· 2 0 : 3 0之共聚合比之具有6,1 〇 〇之M w的共聚 物0 將此樹脂稱為「樹脂(Β —5)」。 合成實施例Ί 4 將46· 31克之曱基丙烯酸2一曱基一 2_金剛烷酯及53· 69克 之以下化合物(34)溶解於2 0 0克之2- 丁酮中,而得均勻溶 液’隨後加入4. 04克之偶氮雙異戊酸曱酯作為引發劑,而 得單體溶液。 使氮氣發泡通過含1 00克之2- 丁酮之1公升的三頸燒瓶30 分鐘。邊攪拌邊將溫度提高至8〇 t。經由於1〇毫升/5分 鐘之速率下滴·入而加入以上的單體溶液,及使混合物聚合 5小日寸。使反應溶液冷卻至3 〇艺或以下,並將其倒入至 2,0 0 0克之甲醇中。經由過濾收集所產生之白色沈澱物, 將其與4 0 0克之甲醇混合,並洗滌兩次。將白色沈殿物過 濾,並於50 °C下乾燥17小時,而得樹脂。 此樹脂係具有甲基丙烯酸2-甲基一2—金剛烷酯:化學式 ㈠^之化合物^“^^彳之共聚合比之具有以^⑽之^的1304060 V. Description of invention (121) Hook/Valley 'Night. After immersing in nitrogen for 30 minutes, 3 grams of A IBN was added. The mixture was heated to 65 ° C and stirred at this temperature for 6 hours. After the polymerization, the solution was allowed to cool to room temperature and diluted with 50 g of tetrahydrofuran. The diluted solution was poured into 1, (10) liters of n-hexane. The precipitated white powder was collected by filtration and dried to give a resin. This resin has nordecene·maleic anhydride··8-hydroxytetracyclo[4·4·0·12′5·17′10]dodec-3-ene··mercaptoacrylic acid 2 - Mercapto-2-Golden vinegar = 1 5 ·· 3 5 ·· 2 0 : 3 0 copolymerization ratio of copolymer with a M of 6,1 0 0 This resin is called "resin (Β —5)”. Synthesis Example Ί 4 46. 31 g of decylacrylic acid 2-indenyl-2-amantane and 53. 69 g of the following compound (34) were dissolved in 200 g of 2-butanone to give a homogeneous solution. Subsequently, 4.04 g of decyl bis-isovalerate was added as an initiator to obtain a monomer solution. Nitrogen gas was bubbled through a 1 liter three-necked flask containing 100 grams of 2-butanone for 30 minutes. Increase the temperature to 8 〇 t while stirring. The above monomer solution was added by dropping at a rate of 1 〇 ml / 5 minutes, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 3 liters or less and poured into 2,0 gram of methanol. The resulting white precipitate was collected via filtration, mixed with 400 g of methanol and washed twice. The white precipitate was filtered and dried at 50 ° C for 17 hours to obtain a resin. This resin has 2-methyl-2-anoic acid methacrylate: the compound of the formula (1)^^^^彳 has a copolymerization ratio of ^(10)

C:\2D-00DE\91-09\91114303.ptd 1304060 五、發明說明(122) 共聚物。 將此樹脂稱為「樹脂(B-6) H2 CH3II clclcl〇 (3C:\2D-00DE\91-09\91114303.ptd 1304060 V. Inventive Note (122) Copolymer. This resin is called "resin (B-6) H2 CH3II clclcl〇 (3

〇 合成實施例1 5 將40· 90克之曱基丙稀酸2-甲基一2 —金剛烷酯、15· 47克 之曱基丙烯酸3-經基-1-金剛烷酯、及43· 64克之化學式 (34)之化合物溶解於200克之2 - 丁酮中,而得均勻溶液, 隨後加入4· 02克之偶氮雙異戊酸甲酯,而得單體溶液。 使氮氣發泡通過含1 00克之2- 丁酮之1公升的三頸燒瓶3〇 分鐘。邊攪拌邊將溫度提高至8〇t。經由於1〇毫升/5分 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至30 t或以下,並將立倒入至 2, 0 0 0克之甲醇中。經由過濾收集所產生之白色沈澱物, 將其與40 0克之曱醇混合,並洗滌兩次。將白色沈澱物過 濾,並於5 0 °C下乾燥1 7小時,而得樹脂。 此樹脂係具有甲基丙烯酸2-甲基—2-金剛烷酯:甲基丙 烯酸3-羥基-1_金剛烷酯··化學式(34)之化合物= 36·2: 1 5 · 2 ·· 4 8 · 6之共聚合比之具有9,2 0 0之Mw的共聚物。〇 Synthesis Example 1 5 40. 90 g of mercaptopropyl 2-methyl-2-amantane, 15.47 g of decylacrylic acid 3-yl-1-adamantyl ester, and 43·64 g The compound of the formula (34) was dissolved in 200 g of 2-butanone to obtain a homogeneous solution, followed by the addition of 4.02 g of azobisisovalerate to obtain a monomer solution. Nitrogen gas was bubbled through a 1 liter three-necked flask containing 100 grams of 2-butanone for 3 minutes. Increase the temperature to 8 〇t with stirring. The above monomer solution was added by dropwise addition at a rate of 1 ml / 5 minutes, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 30 t or less, and poured into methanol of 2,0 g. The resulting white precipitate was collected via filtration, mixed with 40 g of sterol and washed twice. The white precipitate was filtered and dried at 50 ° C for 1 hour to give a resin. This resin has 2-methyl-2-adamantyl methacrylate: 3-hydroxy-1_adamantyl methacrylate · Compound of formula (34) = 36·2: 1 5 · 2 ·· 4 The copolymerization of 8 · 6 is a copolymer having a Mw of 9,200.

C:\2D-OODE\91-O9\91114303.ptd 第127頁 1304060 五、發明說明(123) 將此樹脂稱為「樹脂(B-7)」。 合成實》fe例1 6 將50· 55克之甲基丙烯酸2-曱基一 2 —金剛烷酯、25. 49克 之甲基丙烯酸3 -羥基-1-金剛烧酯、及23·97克之化學式 (34)之化合物溶解於2 0 0克之2 - 丁酮中,而得均勻溶液, 隨後加入3 · 9 7克之偶氮雙異戊酸甲酯,而得單體溶液。 使氮氣發泡通過含1 0 0克之2 - 丁 _之1公升的三頸燒瓶3 〇 分鐘。邊攪拌邊將溫度提高至80。經由於1〇毫升/5分 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至3〇或以下,並將其倒入至 2,0 0 0克之甲醇中。經由過濾收集所產生之白色沈澱物, 將其與4 0 0克之甲醇混合,並洗滌兩次。將白色沈澱物過 渡,並於5 0 C下乾無1 7小時,而得樹脂。 此樹脂係具有甲基丙烯酸2 -曱基一 2 -金剛烷酯:曱基丙 烯酸3-羥基-1-金剛烷酯:化學式(34)之化合物= 45. 2: 25.6:29.2之共聚合比之具有9, 800之Mw的共聚物。 將此樹脂稱為「樹脂(B - 8 )」。 合成實施例1 7 將46.17克之曱基丙烯酸2 -曱基-2 -金剛烷酯、5.179克 之曱基丙烯酸3-羥基-1-金剛烷酯、及48. 65克之化學式 (34)之化合物溶解於20 0克之2 - 丁酮中,而得均勻溶液, 隨後加入4 · 0 3克之偶氮雙異戊酸曱酯,而得單體溶液。 使氮氣發泡通過含1 〇〇克之2 - 丁酮之1公升的三頸燒瓶30 分鐘。邊攪拌邊將溫度提高至8 〇 °C。經由於1 〇毫升/ 5分C:\2D-OODE\91-O9\91114303.ptd Page 127 1304060 V. INSTRUCTIONS (123) This resin is referred to as "resin (B-7)". Synthesis Example 1 6 50. 55 g of 2-mercapto-2-oxanyl methacrylate, 25.49 g of 3-hydroxy-1-carbo- methacrylate, and a chemical formula of 23·97 g ( The compound of 34) was dissolved in 200 g of 2-butanone to obtain a homogeneous solution, followed by the addition of 3.9 g of methyl azobisisovalerate to obtain a monomer solution. Nitrogen gas was bubbled through a three-necked flask containing 100 liters of 2-butyr to 3 liters for 3 minutes. Increase the temperature to 80 while stirring. The above monomer solution was added by dropwise addition at a rate of 1 ml / 5 minutes, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 3 Torr or less and poured into 2,0 g of methanol. The resulting white precipitate was collected via filtration, mixed with 400 g of methanol and washed twice. The white precipitate was transferred and dried at 50 ° C for 1 hour to obtain a resin. This resin has 2-nonyl-2-oxanyl methacrylate: 3-hydroxy-1-adamantyl methacrylate: compound of formula (34) = 45. 2: 25.6:29.2 copolymerization ratio A copolymer having a Mw of 9,800. This resin is referred to as "resin (B-8)". Synthesis Example 1 7 46.17 g of 2-mercapto-2-adamantyl methacrylate, 5.179 g of 3-hydroxy-1-adamantyl methacrylate, and 48.65 g of a compound of the formula (34) were dissolved in 20 0 g of 2-butanone was obtained to obtain a homogeneous solution, followed by the addition of 4·3 g of decyl bis-isovalerate to obtain a monomer solution. Nitrogen gas was bubbled through a 1 liter three-necked flask containing 1 gram of 2-butanone for 30 minutes. Increase the temperature to 8 〇 °C while stirring. By 1 〇 ml / 5 points

C:\2D-C0DE\91-09\91114303.ptd 第128頁 1304060 五、發明說明(124) 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至3 0 °c或以下,並將其倒入至 2,0 〇 〇克之曱醇中。經由過濾收集所產生之白色沈澱物, 將其與40 0克之曱醇混合,並洗滌兩次。將白色沈澱物過 濾,並於5 0 °C下乾燥1 7小時,而得樹脂。 此樹脂係具有曱基丙烯酸2-甲基一2-金剛烷酯:曱基丙 烯酸3 -羥基-1 -金剛烷酯:化學式(3 4 )之化合物=3 9 · 2 : 5. 4:55.4之共聚合比之具有9,400之Mw的共聚物。 將此樹脂稱為「樹脂(B - 9 )」。 合成實施例1 8 將47.76克之甲基丙烯酸2-乙基—2 -金剛炫酯及52·24克 之化學式(34)所示之化合物溶解於2Q0克之2_ 丁酮中,而 得均勻溶液’隨後加入3 · 9 3克之偶氮雙異戊酸曱酯,而得 單體溶液。 使氮氣發泡通過含1 0 0克之2 - 丁酮之1公升的三頸燒瓶3 〇 分鐘。邊授拌邊將溫度提高至8〇 °c。經由於1〇毫升/ 5分 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至3 0 °C或以下,並將其倒入至 2,0 0 0克之曱醇中。經由過滤收集所產生之白色沈澱物, 將其與4 0 0克之曱醇混合,並洗滌兩次。將白色沈殿物過 濾,並於5 0 °C下乾燥1 7小時,而得樹脂。 此樹脂係具有甲基丙烯酸2-乙基—2-金剛烷酯:化學式 (34)之化合物= 39.8:60.2之共聚合比之具有η,600之Mw的 共聚物。C:\2D-C0DE\91-09\91114303.ptd Page 128 1304060 V. INSTRUCTION DESCRIPTION (124) The above monomer solution was added dropwise at a rate of the clock, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 30 ° C or below and poured into 2,0 gram of sterol. The resulting white precipitate was collected via filtration, mixed with 40 g of sterol and washed twice. The white precipitate was filtered and dried at 50 ° C for 1 hour to give a resin. This resin has 2-methyl-2-adamantyl methacrylate: 3-hydroxy-1 -adamantyl methacrylate: compound of formula (3 4 ) = 3 9 · 2 : 5. 4:55.4 The copolymer was copolymerized to have a Mw of 9,400. This resin is referred to as "resin (B - 9 )". Synthesis Example 1 8 47.76 g of 2-ethyl-2-hexadecyl methacrylate and 52.24 g of the compound of the formula (34) were dissolved in 2Q0 g of 2-butanone to obtain a homogeneous solution 'subsequently added 3 · 9 3 grams of azobisisovalerate, and a monomer solution. Nitrogen gas was bubbled through a 1 liter three-necked flask containing 100 grams of 2-butanone for 3 minutes. Increase the temperature to 8 ° °c while mixing the edges. The above monomer solution was added by dropwise addition at a rate of 1 Torr / 5 minutes, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 30 ° C or below and poured into 2,0 g of sterol. The white precipitate produced was collected by filtration, mixed with 400 g of sterol and washed twice. The white precipitate was filtered and dried at 50 ° C for 17 hours to obtain a resin. This resin has a copolymer of 2-ethyl-2-adamantyl methacrylate: a compound of the formula (34) = 39.8:60.2 having a copolymerization ratio of η, 600 Mw.

C:\2D-roDE\91-09\91114303.ptd 第129頁 1304060 五、發明說明(125) 將此樹脂稱為「樹脂(B- 1 〇 )」。 合成實施例1 9 將41.95克之曱基丙烯酸1—乙基環己酯及58〇5克之化學 式(34)所示之化合物溶解於2〇〇克之2- 丁酮中,而得均勻 溶液’隨後加入4 · 3 7克之偶氮雙異戊酸曱g旨,而得單體溶 液。 使氮氣發泡通過含1 〇〇克之2- 丁酮之1公升的三頸燒瓶30 分鐘。邊攪拌邊將溫度提高至8(Tc。經由於10毫升/5分 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至3 〇 °c或以下,並將其倒入至 2, 0 0 0克之曱醇中。經由過濾收集所產生之白色沈澱物, 將其與4 0 0克之甲醇混合,並洗滌兩次。將白色沈澱物過 濾,並於50 °C下乾燥17小時,而得樹脂。 此樹脂係具有曱基丙烯酸1 —乙基環己酯:化學式(3 4)之 化合物= 42·1:57·9之共聚合比之具有^,400之Mw的共聚 物。 將此樹脂稱為「樹脂(B - 1 1 )」。 合成實施例20 將52· 00克之甲基丙烯酸2-乙基-2-金剛烷酯、24. 74克 之甲基丙烯酸3 -羥基-1-金剛烷酯、及23. 26克之化學式 (34)之化合物溶解於200克之2 - 丁酮中,而得均勻溶液, 隨後加入3 · 8 5克之偶氮雙異戊酸曱酯,而得單體溶液。 使氮氣發泡通過含1 00克之2 - 丁酮之1公升的三頸燒瓶30 分鐘。邊攪拌邊將溫度提高至8 〇 °c。經由於1 〇毫升/ 5分C:\2D-roDE\91-09\91114303.ptd Page 129 1304060 V. INSTRUCTIONS (125) This resin is referred to as "resin (B-1 〇)". Synthesis Example 1 9 41.95 g of 1-ethylcyclohexyl methacrylate and 58 〇 5 g of the compound of the formula (34) were dissolved in 2 gram of 2-butanone to obtain a homogeneous solution 'subsequently added 4 · 3 7 grams of azobisisovalerate 曱g, and a monomer solution. Nitrogen gas was bubbled through a 1 liter three-necked flask containing 1 gram of 2-butanone for 30 minutes. The temperature was raised to 8 (Tc) while stirring. The above monomer solution was added by dropwise addition at a rate of 10 ml/5 minutes, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 3 〇 °c or less. Pour it into 2,00 g of sterol. The white precipitate produced was collected by filtration, mixed with 400 g of methanol and washed twice. The white precipitate was filtered and taken at 50 Drying at ° C for 17 hours to obtain a resin. This resin has 1-ethylcyclohexyl methacrylate: the compound of the formula (34) = 42·1:57·9 has a copolymerization ratio of ^,400 Copolymer of Mw. This resin is referred to as "resin (B - 1 1 )". Synthesis Example 20 2,200 g of 2-ethyl-2-adamantyl methacrylate, 24.74 g of methyl group 3-hydroxy-1-adamantyl acrylate, and 23.26 g of the compound of formula (34) are dissolved in 200 g of 2-butanone to give a homogeneous solution, followed by the addition of 3 · 8 5 g of azobis isovaleric acid The oxime ester was obtained as a monomer solution. The nitrogen gas was bubbled through a 1 liter three-necked flask containing 100 g of 2-butanone for 30 minutes. The temperature was increased to edge 8 billion ° c. Since 1 through milliliters / 5 min

C:\2D-OODE\91-O9\91114303.ptd 第130頁 1304060C:\2D-OODE\91-O9\91114303.ptd Page 130 1304060

五、發明說明(126) 鐘之速率下滴入而加入以上的單體溶液,及使混合物聚合 5小時。使反應溶液冷卻至3 0 °c或以下,並將其倒入至 2,0 0 0克之曱醇中。經由過濾收集所產生之白色沈澱物, 將其與4 0 0克之甲醇混合’並洗條兩次。將白色沈殿物過 濾,並於5 0 °C下乾燥1 7小時,而得樹脂。 此樹脂係具有曱基丙烯酸2 -乙基一 2 -金剛烷酯:曱基丙 烯酸3-羥基-1-金剛烷酯:化學式(34)之化合物=44.4: 25.3:30.3之共聚合比之具有8,700之Mw的共聚物。 將此樹脂稱為「樹脂(B- 1 2 )」。V. Description of the Invention (126) The above monomer solution was added dropwise at the rate of the clock, and the mixture was polymerized for 5 hours. The reaction solution was cooled to 30 ° C or below and poured into 2,0 g of sterol. The resulting white precipitate was collected via filtration, mixed with &lt;RTIgt; The white precipitate was filtered and dried at 50 ° C for 17 hours to obtain a resin. This resin has 2-ethyl-2-alkanoyl methacrylate: 3-hydroxy-1-adamantyl methacrylate: compound of formula (34) = 44.4: 25.3: 30.3 has a copolymerization ratio of 8 , 700 Mw copolymer. This resin is referred to as "resin (B-1 2 )".

合成實施例2 1 將三頸燒瓶裝入1 · 5 2克之化學式(3 5 )之矽烷化合物、 1.57克之化學式(36)之石夕烧化合物、ι·9ΐ克之甲基三乙氧 矽烷、15克之4-甲基-2 -戊酮、及丨· 31克之丨· 75%之草酸水 /谷液。邊稅拌邊使混合物在8 〇 t下反應6小時,隨後利用 冰塊冷卻而終止反應。將反應混合物倒入至分液漏斗中, 以移除水層。將有機層以離子交換水洗滌,直至反應溶液 變中性為止。將有機層於減壓下蒸發而得樹脂。 樹脂之M w為2,5 0 0Synthesis Example 2 1 A three-necked flask was charged with 1.52 g of a decane compound of the formula (3 5 ), 1.57 g of a compound of the formula (36), a methyl triethoxy decane of 15 g, and 15 g of 4-methyl-2-pentanone, and 丨· 31 g of 丨 · 75% of oxalic acid water/glutamine. The mixture was allowed to react at 8 Torr for 6 hours while the side was mixed with water, and then the reaction was terminated by cooling with ice. The reaction mixture was poured into a separatory funnel to remove the aqueous layer. The organic layer was washed with ion-exchanged water until the reaction solution became neutral. The organic layer was evaporated under reduced pressure to give a resin. The M w of the resin is 2,5 0 0

Si(〇C2H5)3Si(〇C2H5)3

(35)(35)

ch2 F3c—c—CF: (36) c(ch3)3Ch2 F3c—c—CF: (36) c(ch3)3

13040601304060

合成實施例2 邊攪拌邊將7克之碳酸二—笫-^7 η ^ ^ ^ 一 弟一丁酉曰加至12克之聚(4 -羥 本乙焊)及5克二乙月女溶於5 Q古 铷+ ΠΓ树Γ 克二氧陸圜之溶液中。使混合 物在至/皿下授拌6小時。麸德Λ 、俊加入卓酸以使三乙胺中和。 將反應溶液滴入至大量水中u t ^ 丄,a、 里水f 以使樹脂凝聚。將凝聚樹脂 以純水洗務數次。鈇德將;^日tl、占 ”、、傻將树月日過濾,並在減壓下於50 °c下 乾燥隔夜。 此樹脂之乂〜及^1〜/1111分別為9,2 0 0及1.8。由13(:-關1^分析 之結果’測得樹脂具有聚(4 -羥苯乙烯)中之酚羥基之氫原 子的3 0莫耳百分比經第三丁氧羰基取代的結構。 將此樹脂稱為「樹脂(B -1 4)」。 合成實施例2 3 將41·15克之曱基丙烯酸2-曱基_2 -金剛烷酯、5·19克之 甲基丙烯酸3 -羥基-1-金剛烷酯、及5 3. 6 6克之化學式(34) 之化合物溶解於200克之2- 丁酮中,而得均勻溶液,隨後 加入4 · 0 4克之偶氮雙異戊酸曱酯,而得單體溶液。 使氮氣發泡通過含1 〇 〇克之2 - 丁酮之1公升的三頸燒瓶3 〇 分鐘。邊攪拌邊將溫度提高至80 °C。經由於毫升/5分 鐘之速率下滴入而加入以上的單體溶液,及使混合物♦ a 5小時。使反應溶液冷卻至3 0 °C或以下,並將其倒入至Synthesis Example 2 7 g of di-anthracene-^7 η ^ ^ ^ 弟 一 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰 酉曰铷 铷 + ΠΓ Γ 克 二 二 氧 圜 圜 solution. The mixture was allowed to mix for 6 hours under the dish. Bunde and Jun add acid to neutralize triethylamine. The reaction solution was dropped into a large amount of water u t ^ 丄, a, water r to condense the resin. The coagulated resin was washed several times with pure water.鈇德将;^日 tl,占”,, silly will filter the tree day and dry under vacuum at 50 °c overnight. The resin 乂~ and ^1~/1111 are 9,2 0 0 And 1.8. The structure in which the resin has a 30-mole percentage of a hydrogen atom of a phenolic hydroxyl group in poly(4-hydroxystyrene) by a third butoxycarbonyl group was measured by 13 (: - Results of analysis). This resin is referred to as "resin (B - 14)". Synthesis Example 2 3 41.15 g of 2-mercapto-2-adamantyl acrylate, 5·19 g of methacrylic acid 3-hydroxy- 1-adamantyl ester, and 5 3. 6 g of the compound of formula (34) are dissolved in 200 g of 2-butanone to give a homogeneous solution, followed by the addition of 4 · 4 g of decyl bis-isovalerate. A monomer solution was obtained. The nitrogen gas was bubbled through a 1 liter three-necked flask containing 1 gram of 2-butanone for 3 minutes, and the temperature was raised to 80 ° C while stirring. The rate was passed in milliliters / 5 minutes. Add the above monomer solution by dropwise addition, and make the mixture ♦ a 5 hours. Allow the reaction solution to cool to 30 ° C or below, and pour it into

C:\2D-O0DE\91-09\91114303.ptd 第132頁 1304060 五、發明說明(128) 2,0 0 0克之曱醇中。經由過濾收集所產生之白色沈澱物, 將其與4 0 0克之曱醇混合,並洗滌兩次。將白色沈澱物過 濾,並於5 0 °C下乾燥1 7小時,而得樹脂。 此樹脂係具有曱基丙烯酸2-甲基一2-金剛烷酯:曱基丙 稀酸3 -經基-1-金剛烧酯:化學式(34)之化合物= 35.8: 5.1:59.1之共聚合比之具有9,800之1^的共聚物。 將此樹脂稱為「樹脂(B- 1 5 )」。 輻射敏感性樹脂組成物 實施例1 - 1 9及比鮫實施例1 將表1所示之成份混合,而製備得均勻溶液。將溶液過 滤通過具有0 · 2微米孔隙直徑之薄膜過濾器,而得組成物 溶液。將溶液組成物旋塗於矽晶圓上。然後在表2所示之 條件下進行P B ’而形成具有表2所示之厚度的光阻劑塗 層。 關於實施例中之輻射光源:將Nikon c〇rporation製造 之分檔器(Stepper)NSR 220 5 EX 12B(數值孔隙:0.55)使 用作為KrF準分子雷射(於表2中指示為「KrF」);將Nik〇n Corporation製造之ArF準分子雷射曝光裝置(數值孔隙: 0.55)使用作為ArF準分子雷射(於表j中指示為「ArF」); 將Ultratech Stepper, lnc.製造之&amp;準分子雷射曝光裝 = X_LS(數值孔隙:0.60)使用作為匕準分子雷射(於表】中 h h」),ML “Α1,Ud .製造之直寫電子束微影 機益HL-70 0 (其中之加速電壓經改良至3〇仟電子伏特至5〇 仟電子伏特之範圍的裝置)使用作為電子束。於根據表2之C:\2D-O0DE\91-09\91114303.ptd Page 132 1304060 V. INSTRUCTIONS (128) 2,0 0 gram of sterol. The white precipitate produced was collected by filtration, mixed with 400 g of sterol and washed twice. The white precipitate was filtered and dried at 50 ° C for 1 hour to give a resin. This resin has 2-methyl-2-adamantyl methacrylate: mercapto-acrylic acid 3-carbyl-1-adamantate: compound of formula (34) = 35.8: copolymerization ratio of 5.1:59.1 It has a copolymer of 9,800. This resin is referred to as "resin (B-15)". Radiation-sensitive resin composition Examples 1 - 19 and Comparative Example 1 The components shown in Table 1 were mixed to prepare a homogeneous solution. The solution was filtered through a membrane filter having a pore diameter of 0.2 μm to obtain a composition solution. The solution composition was spin coated onto a tantalum wafer. Then, P B ' was carried out under the conditions shown in Table 2 to form a photoresist coating layer having the thickness shown in Table 2. Regarding the radiation source in the embodiment: a stepper NSR 220 5 EX 12B (numerical aperture: 0.55) manufactured by Nikon c〇rporation was used as a KrF excimer laser (indicated as "KrF" in Table 2) An ArF excimer laser exposure apparatus (numerical aperture: 0.55) manufactured by Nik〇n Corporation was used as an ArF excimer laser (indicated as "ArF" in Table j); manufactured by Ultratech Stepper, lnc. &amp; Excimer laser exposure equipment = X_LS (numerical aperture: 0.60) is used as a 匕 excimer laser (hh in the table), ML "Α1, Ud. Manufactured by direct-write electron beam lithography machine HL-70 0 (The device in which the accelerating voltage is modified to a range of 3 〇仟 electron volts to 5 〇仟 electron volts) is used as an electron beam.

1304060 五、發明說明(129)1304060 V. Description of invention (129)

條件進行曝光後,根據表2之條件進行p e B 利用槳法(paddle method)使用2. 38重量百分比之氣氧 化四曱銨水溶液使光阻劑圖案在23 °C下顯影1分鐘。 以純水洗滌光阻劑塗層,並乾燥形成光阻劑圖案。各光阻 劑之評估結果示於表3。 ^ f施例2 0 - Μ 將表4所示之成份混合,而製備得均勻溶液。將溶液過 攄通過具有0.2微米孔隙直徑之薄膜過濾器,而得組成物 溶液。將溶液組成物旋塗於矽晶圓上。然後在表5所示之 條件下進行Ρ Β,而形成具有表5所示之厚度的光阻劑^ 層。 土 使用分槽斋NSR2205 EX12B(Nikon Corp·製造, 數值孔隙:〇 · 5 5 )使光阻劑塗層暴露至KrF準分子雷射,並 在表5所示之條件下烘烤(PEB)。利用槳法使用2·38重量百 分比之氫氧化四甲銨水溶液使光阻劑圖案在2 3艺下顯影工 分釦。然後以純水诜滌光阻劑塗層,並乾燥形成光阻劑圖 案。各光阻劑之評估結果示於表6。 貫施例1 - 2 3及比較實施例i之光阻劑的評估係進行如 下。 敏感度: 一敏感度係以最佳曝光劑量為基準而評估,此最佳曝光劑 量係當使形成於矽晶圓基材上之光阻劑塗層暴露至光,隨 後立即進订PEB、鹼性顯影、以水洗滌、及乾燥時,可形 成具有〇· 22微米線寬之丨:}線條及空間圖案(1L1S)的劑After the conditions were exposed, p e B was subjected to a paddle method using a 2.38 weight percent gas oxidized tetra-ammonium aqueous solution to develop the photoresist pattern at 23 ° C for 1 minute. The photoresist coating is washed with pure water and dried to form a photoresist pattern. The evaluation results of the respective photoresists are shown in Table 3. ^ fExample 2 0 - Μ The ingredients shown in Table 4 were mixed to prepare a homogeneous solution. The solution was passed through a membrane filter having a pore diameter of 0.2 μm to obtain a composition solution. The solution composition was spin coated onto a tantalum wafer. Then, under the conditions shown in Table 5, ruthenium was formed to form a photoresist layer having the thickness shown in Table 5. Soil The photoresist coating was exposed to a KrF excimer laser using a slit NSR2205 EX12B (manufactured by Nikon Corp., numerical aperture: 〇 · 5 5 ), and baked under the conditions shown in Table 5 (PEB). The photoresist pattern was developed by a paddle method using a 2.38 weight percent aqueous solution of tetramethylammonium hydroxide. The photoresist coating is then rinsed with pure water and dried to form a photoresist pattern. The evaluation results of the respective photoresists are shown in Table 6. The evaluation of the photoresists of Examples 1 - 2 and Comparative Example i was carried out as follows. Sensitivity: A sensitivity is evaluated based on the optimum exposure dose. When the photoresist coating formed on the enamel wafer substrate is exposed to light, the PEB and alkali are immediately ordered. For development, washing with water, and drying, it can form a 〇·22 micron line width }:} line and space pattern (1L1S) agent

第134頁 1304060 五、發明說明(130) 量。在j吏用ArF準分子雷射之實施例中,使用可形成具有 1 : 1線寬之0. 16微米線條及空間圖案(1L1S)的最佳劑量。 解析度: 將由最佳曝光劑量所解析之最小線條及空間(丨L丨s)尺寸 作為解析度。 光罩圖案相關性1 將當使用最佳劑量曝光時,對〇 · 2 2微米丨L〗〇 S圖案(〇 · 2 2 微=線條/2. 2微米空間)提供具有超過設計線寬之7〇%之 線覓之線條圖案的光阻劑塗層指示為「良好」,否則將光 阻巧塗層指示為「差」。當在最佳劑量下使用ArF曝光裝 ^ 將當使用最佳劑量曝光時,對〇.16微米1Li〇s圖案 (0 · 1 6微米線條y/〗G ^轉\ 1Λ。/ 心办 1 ·6从未二間)提供具有超過設計線寬之 7 0 %之線兔之線條宏沾企 τ 1 ^艮保圖案的先阻劑塗層指示為「良好」,否 則將光阻劑塗層指示為「差」。 光罩圖案逼直」 將當使用最佳劑量睬# 士 (0 9 9 ^ φ ^ 先日可所產生之在0· 22微米1L5S圖案 UJ ·以微术線條/ 1 η料止‘、 丰、&gt; Ρ3沾產r 6 ·放水二間)之線寬與設計寬度(〇. 22微 未)之間的差(絕對值)作為 實碜例囷案延”度。 於厂有表7所不之成份的各組成物溶液。評估結果示 實施例2 4 - 3 4及比較f浐 下。 貝^例2之光阻劑的評估係進行如 輻射透射率:Page 134 1304060 V. INSTRUCTIONS (130) Quantities. In the embodiment in which an ArF excimer laser is used, an optimum dose which can form a line and space pattern (1L1S) having a line width of 1:1 is used. Resolution: The minimum line and space (丨L丨s) size resolved by the optimal exposure dose is used as the resolution. Mask pattern correlation 1 When using the optimal dose exposure, the 〇· 2 2 micron 〇L 〇S pattern (〇· 2 2 micro = line / 2. 2 micron space) is provided with a design line width of 7 The photoresist coating of the line pattern of 〇% 觅 is indicated as "good", otherwise the photoresist is indicated as "poor". When using the ArF exposure at the optimum dose, when using the optimal dose exposure, the pattern of 〇.16 μm 1Li〇s (0 · 16 6 lines y / 〗 G ^ turn \ 1 Λ. / Heart 1) 6 never provided two lines with a line width of more than 70% of the line width of the design line. The first resist coating indication of the pattern is "good", otherwise the photoresist coating indication It is "poor". The reticle pattern is straightened" will be used when the optimal dose 睬#士(0 9 9 ^ φ ^ The first day can be produced in 0·22 micron 1L5S pattern UJ · with microsurgery lines / 1 η料止', Feng, &gt The difference between the line width of the Ρ3 and the design width (〇. 22 micro-) is the extension of the case. The composition of each component of the composition. The evaluation results are shown in Example 2 4 - 3 4 and compared under the f浐. The evaluation of the photoresist of Example 2 is carried out as the radiation transmittance:

1304060 五、發明說明(131) 經由旋塗將組成物溶液塗布至石英板,並於電熱板上 130 t:下後烘烤60秒,而製得厚度〇· 34微米之光阻劑塗 層。由在1 93奈米之波長下的吸光度計算光阻劑塗層=輻 射透射率,並將其使用作為在深uv射線區域中之透明度&quot; 標準。 又 敏感度: 經由旋塗將組成物溶液塗布至於表面上塗布有82〇埃厚 度之ARC25 薄膜的矽晶圓(ARC25)(Brewer Science Corp. 製造),並於電熱板上在表8所示之條件下後烘烤,而製得 厚度〇· 34微米之光阻劑塗層。使用ArF準分子雷射曝光裝 覃(Nikon Corp.製造,透鏡數值孔隙:〇· 55)使塗層透過 光罩圖案暴露至輻射。於在表8所示之條件下進行ρΕβ後, 使光阻劑塗層於2· 38重量百分比之氫氧化四曱銨水溶液中 在2 5 °C下顯影80秒,以水洗滌,並乾燥形成正型光阻劑圖 案。將可形成具有1 : 1線寬之〇·丨6微米線條及空間圖案 (1 L1 S )的最佳劑量作為敏感度。 解析度: 將由最佳曝光劑量所解析之最小線條及空間(丨L1 s)尺寸 作為解析度。 圖案側面: 使用掃描電子顯微鏡測量具有0 · 1 6微米線寬之線條及空 間圖f (1L1S)之矩形截面之下側Lb及上側La的尺寸。將滿 足式「〇· 85 &lt;:= U/Lb &lt; = 1」,且平直而無延伸邊緣狀的 圖案形狀評估為「良好 。 13040601304060 V. INSTRUCTION DESCRIPTION (131) The composition solution was applied to a quartz plate by spin coating, and baked on a hot plate for 130 seconds: followed by baking for 60 seconds to obtain a photoresist coating having a thickness of 〇·34 μm. The photoresist coating = radiation transmittance was calculated from the absorbance at a wavelength of 93 nm and used as a transparency &quot; standard in the deep uv ray region. Further sensitivity: The composition solution was applied by spin coating to a tantalum wafer (ARC25) (manufactured by Brewer Science Corp.) coated with an ARC25 film having a thickness of 82 angstroms, and was shown in Table 8 on a hot plate. Post-baking was carried out under conditions to obtain a photoresist coating having a thickness of 〇·34 μm. The coating was exposed to radiation through a reticle pattern using an ArF excimer laser exposure device (manufactured by Nikon Corp., lens numerical aperture: 〇·55). After the ρΕβ was carried out under the conditions shown in Table 8, the photoresist coating was developed in an aqueous solution of 2.88% by weight of tetraammonium hydroxide at 25 ° C for 80 seconds, washed with water, and dried to form. Positive photoresist pattern. The optimum dose of a 6 μm line and space pattern (1 L1 S ) having a line width of 1:1 is formed as the sensitivity. Resolution: The minimum line and space (丨L1 s) size resolved by the optimal exposure dose is used as the resolution. Pattern side: The size of the lower side Lb and the upper side La of the rectangular section having a line width of 0·16 μm and a space map f (1L1S) were measured using a scanning electron microscope. The pattern shape of the pattern "〇· 85 &lt;:= U/Lb &lt; = 1" and straight without extension edge is evaluated as "good. 1304060

1304060 五、發明說明(133) a-4 :九氟正丁磺酸1-( 4-正丁氧萘-1-基)四氫噻吩錄] 驗可溶解樹月旨 C-1 :4 -羥苯乙烯/苯乙烯共聚物(共聚合比:78:22, Mw-3,100 ,Mw/Mn=1.13 ; VPS3020(Nippon Soda Co., Ltd.製造)&lt;0) 酸擴散控制劑 D-1 二 正 辛 胺 D-2 -* 乙 醇 胺 D-3 2- 苯 基 苯 并 咪 口坐 D-4 2, 6 - 二 甲 胺 基 吼唆 D-5 N - 第 二 丁 氧 羰 基-2- 苯基苯并咪唑 交聯劑 E-1 : :N, N, N, N- 四 (曱氧甲 基)乙炔脲 其他添 加劑1304060 V. INSTRUCTIONS OF THE INVENTION (133) a-4 : 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene of nonafluoro-n-butanesulfonic acid] can be dissolved in the form of C-1: 4-hydroxyl Styrene/styrene copolymer (copolymerization ratio: 78:22, Mw-3,100, Mw/Mn=1.13; VPS3020 (manufactured by Nippon Soda Co., Ltd.) &lt;0) Acid diffusion controlling agent D-1 Octyl D-2 -* Ethanolamine D-3 2-Phenylbenzopyrene D-4 2,6 -Dimethylaminoindole D-5 N - Second Butoxycarbonyl-2-Phenylbenzo Imidazole crosslinker E-1 : :N, N, N, N-tetrakis(曱oxymethyl)acetylene urea other additives

F-l :去氧膽酸第三丁酯 F - 2 ··去氧膽酸第三丁氧羰甲酯 F - 3 :石膽酸第三丁氧羰曱酉旨 溶劑F-l: tert-butyl deoxycholate F - 2 · deoxycholic acid tert-butoxycarbonyl methyl ester F - 3 : lithocholic acid third butoxycarbonyl hydrazine solvent

G - 1 :乳酸乙酯 G-2 :3-乙氧丙酸乙酯 G -3 :丙二醇單曱醚乙酸酯 G-4 : 2-庚酮 G-5 :環己酮 G — 6 : τ一丁内酉旨G - 1 : ethyl lactate G-2 : ethyl 3-ethoxypropionate G - 3 : propylene glycol monoterpene ether acetate G-4 : 2-heptanone G-5 : cyclohexanone G - 6 : τ One

C:\2D-CODE\91-09\91114303.ptd 第138頁 1304060 五、發明說明(134) 括號中之單位:重量份數C:\2D-CODE\91-09\91114303.ptd Page 138 1304060 V. INSTRUCTIONS (134) Units in parentheses: parts by weight

酸產生劑 樹脂 酸擴散控制劑 交聯劑 其他添加劑 溶劑 實施例】 A-l(3) B-l(lOO) D-3(0.1) - - G-l(800) 實施例2 Α-2(3) B-l(IOO) D-2(0.1) - - G-l(800) 實施例3 Α-3(3) B-1(1 00) D-4(0.3) - - G -1(800) 實施例4 Α-4(3) B-l(lOO) D-3(0.1) - - G-1(800) 實施例5 A-3(l) a-1(6) B-1(100) D-5(0.2) - - G-1(400) G-3(400) 實施例6 Α-3(2) B-2(100) D-2(0.1) - - G-1(400) G-2(400) 實施例7 A-3⑺ B-3(100) D-3(0.1) - - G-1(400) G -3(400) 實施例8 A-2(2) B-4(100) D-1(0.1) - - G-1(400) G-3(400) 實施例9 A-1(2) B-5(90) D-3(0.1) - F-l(10) G-4(700) G-5(300) 實施例10 A-1(5) B-6(92) D-3(0.4) - F-2(8) G-3(700) G-6(50) 實施例η A-2(2) B-13(100) D-3(0.1) - - G-3(1200) 實施例12 A-2(3) B-l(100) D-3(0.1) - - G-l(800) 實施例13 A-2(3) C-l(97) B-4(3) D-l(O.l) E-l(7) - G-l(550) G-2(250) 實施例14 A-1(4) A-2(l) B-7(90) B-ll(10) D-3(0.4) - G-4(250) G-6(550) 實施例15 A· 1(4) A-5(l) B-7(90) B-ll(10) D-3(0.3) - 參 G-4(250) G~6(550) 實施例16 A-1(5) B-8(60) B-10(40) D-3(0.4) - - G-4(800) 實施例口 A-1(5) B-9(100) D-3(0.4) - - G-4(800) 實施例18 A-1(4) A-2(l) B -12(100) D-3(0.4) - - G-4(800) 實施例19 A-1(4) A-5(l) B-12( 100) D-3(0.3) - - 0-4(800) 比較實施例1 a-1(3) B-1(100) D-3(0.1) - - G-1(400) G-3(400) 第139頁 C:\2D-CODE\91-09\91 1 14303.ptd 1304060 五、發明說明(135)表2 厚度 ΡΒ 輻射 PEB (入) 溫度 時間 溫度 時間 (°C) (秒) (°C) (秒) 實施例1 5?000 120 90 KrF準分子雷射 130 90 實施例2 5,000 120 90 KrF準分子雷射 130 90 實施例3 5,000 120 90 KrF準分子雷射 130 90 實施例4 5,000 120 90 KrF準分子雷射 130 90 實施例5 5,000 120 90 KrF準分子雷射 130 90 實施例6 5,000 140 90 KrF準分子雷射 140 90 實施例7 5,000 130 90 KrF準分子雷射 130 90 實施例8 5,000 100 90 KrF準分子雷射 100 90 實施例9 3,000 140 90 ArF準分子雷射 140 90 實施例10 353〇〇 130 90 ArF準分子雷射 130 90 實施例η 15000 130 90 F2準分子雷射 110 90 實施例12 3,000 120 90 電子束 130 90 實施例13 5,000 90 60 KrF準分子雷射 110 90 實施例14 3,300 130 90 ArF準分子雷射 130 90 實1^例15 353〇〇 130 90 ArF準分子雷射 130 90 Λ施例16 353〇〇 130 90 AtF準分子雷射 110 90 實施例17 3,300 130 90 ArF準分子雷射 130 90 實方&amp;例]8 3,300 130 90 ArF準分子雷射 110 90 實施例1.9 3,300 130 90 ArF準分子雷射 110 90 比$交實施 5,000 120 90 KrF準分子雷射 130 90 例1.Acid generator resin acid diffusion control agent crosslinker other additive solvent example] Al(3) Bl(lOO) D-3(0.1) - - Gl(800) Example 2 Α-2(3) Bl(100) D-2(0.1) - - Gl(800) Example 3 Α-3(3) B-1(1 00) D-4(0.3) - - G -1(800) Example 4 Α-4(3) ) Bl(lOO) D-3(0.1) - - G-1(800) Example 5 A-3(l) a-1(6) B-1(100) D-5(0.2) - - G- 1(400) G-3(400) Example 6 Α-3(2) B-2(100) D-2(0.1) - - G-1(400) G-2(400) Example 7 A- 3(7) B-3(100) D-3(0.1) - - G-1(400) G -3(400) Example 8 A-2(2) B-4(100) D-1(0.1) - - G-1(400) G-3(400) Example 9 A-1(2) B-5(90) D-3(0.1) - Fl(10) G-4(700) G-5(300) Example 10 A-1(5) B-6(92) D-3(0.4) - F-2(8) G-3(700) G-6(50) Example η A-2(2) B -13(100) D-3(0.1) - - G-3(1200) Example 12 A-2(3) Bl(100) D-3(0.1) - - Gl(800) Example 13 A-2 (3) Cl(97) B-4(3) Dl(Ol) El(7) - Gl(550) G-2(250) Example 14 A-1(4) A-2(l) B-7 (90) B-ll(10) D-3(0.4) - G-4(250) G-6(550) Example 15 A· 1(4) A-5(l) B-7(90) B -ll(10) D-3(0.3) - Reference G-4(250) G~6(550) Example 16 A-1(5) B -8(60) B-10(40) D-3(0.4) - - G-4(800) Example Port A-1(5) B-9(100) D-3(0.4) - - G- 4(800) Example 18 A-1(4) A-2(l) B -12(100) D-3(0.4) - - G-4(800) Example 19 A-1(4) A- 5(l) B-12( 100) D-3(0.3) - - 0-4(800) Comparative Example 1 a-1(3) B-1(100) D-3(0.1) - - G- 1(400) G-3(400) Page 139 C:\2D-CODE\91-09\91 1 14303.ptd 1304060 V. INSTRUCTIONS (135) TABLE 2 Thickness 辐射 Radiation PEB (in) Temperature Time Temperature Time (°C) (seconds) (°C) (seconds) Example 1 5 000 000 120 90 KrF excimer laser 130 90 Example 2 5,000 120 90 KrF excimer laser 130 90 Example 3 5,000 120 90 KrF Molecular Laser 130 90 Example 4 5,000 120 90 KrF Excimer Laser 130 90 Example 5 5,000 120 90 KrF Excimer Laser 130 90 Example 6 5,000 140 90 KrF Excimer Laser 140 90 Example 7 5,000 130 90 KrF excimer laser 130 90 Example 8 5,000 100 90 KrF excimer laser 100 90 Example 9 3,000 140 90 ArF excimer laser 140 90 Example 10 353〇〇130 90 ArF excimer laser 130 90 Example η 15000 130 90 F2 Laser 110 90 Example 12 3,000 120 90 Electron beam 130 90 Example 13 5,000 90 60 KrF excimer laser 110 90 Example 14 3,300 130 90 ArF excimer laser 130 90 Real 1^ Example 15 353〇〇130 90 ArF Excimer Laser 130 90 Λ Example 16 353〇〇130 90 AtF Excimer Laser 110 90 Example 17 3,300 130 90 ArF Excimer Laser 130 90 Real &amp; Example] 8 3,300 130 90 ArF Excimer Thunder Shot 110 90 Example 1.9 3,300 130 90 ArF excimer laser 110 90 than $ pay implementation 5,000 120 90 KrF excimer laser 130 90 cases 1.

C:\2D-CODE\91-09\91114303.ptd 第140頁 1304060 五、發明說明(136) 表3 解析度 敏感度 光罩圖案相 關性 實施例1 0.2] μι in 3 60 J/m2 良好 實施例2 0.2 1 μ m 3 20 J/m2 良好 實施例3 0.2 0 μ in 3 00 J/m2 良好 實施例4 0.2 0 μ m 3 50 J/m2 良好 實施例5 0.2 0 μ m 3 20 J/m2 良好 實施吞[]6 0.2 1 μ m 3 90 J/m2 良好 實施例7 0.21 μ m 3 60 J/m2 良好 實施例8 0.2 0 μ m 380 J/m2 良好 實施例9 0.1 7 μ m 8 00 J/m2 良好 實施例10 0.1 5 μ m 3 00 J/m2 良好 實施例η 0.1 7 μ m 2 00 J/m2 良好 實施例〗2 0.1 6 μ m 4μΟ 良好 實施例13 0.2 0 μ m 2 60 J/m2 良好 實施例14 0.1 5 μ in 260 J/m2 良好. 實施例15 0.1 5 μ m 2 80 J/m2 良好 實施例〗6 0.1 5 μ ιίί 3 20 J/m2 良好 實施例17 0.1 5 μ m 2 80 J/m2 瓦好 實施例18 0.1 5 μ m 240 J/m2 良好 實施例〗9 0 . 1 5 μι m 270 J/m2 良好 比較實施例1 0.2 ] μ m 3 20 J/m2 Z]二C:\2D-CODE\91-09\91114303.ptd Page 140 1304060 V. INSTRUCTIONS (136) Table 3 Resolution Sensitivity Mask Pattern Correlation Example 1 0.2] μι in 3 60 J/m2 Good implementation Example 2 0.2 1 μ m 3 20 J/m 2 Good Example 3 0.2 0 μ in 3 00 J/m 2 Good Example 4 0.2 0 μ m 3 50 J/m 2 Good Example 5 0.2 0 μ m 3 20 J/m 2 Good implementation swallowing []6 0.2 1 μ m 3 90 J/m2 good example 7 0.21 μ m 3 60 J/m2 good example 8 0.2 0 μ m 380 J/m2 good example 9 0.1 7 μ m 8 00 J /m2 Good example 10 0.1 5 μ m 3 00 J/m 2 Good example η 0.1 7 μ m 2 00 J/m 2 Good example 〗 2 0.1 6 μ m 4 μ Ο Good example 13 0.2 0 μ m 2 60 J/ M2 good example 14 0.1 5 μ in 260 J/m2 good. Example 15 0.1 5 μ m 2 80 J/m 2 good example 〖6 0.1 5 μ ιίί 3 20 J/m2 good example 17 0.1 5 μ m 2 80 J/m2 watts good example 18 0.1 5 μ m 240 J/m2 good example 〗 9 0 . 1 5 μm 270 J/m2 good comparative example 1 0.2 ] μ m 3 20 J/m2 Z] two

IIH1I C:\2D-OODE\91-O9\91114303.ptd 第141頁 1304060 五、發明說明(137) 表4 酸產生劑 樹脂 酸擴散控 制劑 溶劑 實施例20 A-6(2) a-](6) B-l(lOO) D'V(0.2) G、](400) G - 3(400) 實施例21 A-6(2) a-l(6) B-2(l00) D-3(0.2) G-l (400) G、3(400) 實施例22 A-6(2) a-l(6) B-14(100) D-3(0.2) G-l(400) G-3(400) 實施例23 A-6(2) a-3(6) B-4(100) D-2(0.2) G-l(400) G-3(400) 表5 厚度 PB 輻射 PEB (A) 溫度 時間 溫度 時間 (°C) (秒) (°C) (秒) 實施例20 5,000 120 90 KrF準分子雷射 130 90 實施例21 5,000 120 90 KrF準分子雷射 130 90 實施例22 5,000 90 90 KtF準分子雷射 100 90 實施例23 5,000 100 90 KrF準分子雷射 100 90 _ 11 C:\2D-CODE\91-09\91114303.ptd 第142頁 1304060 五、發明說明(138) 表6 解析度 敏感度 光罩圖案逼 真度 實施例20 0.1 8 μ m 3 10 J/m2 10 實施例21 0.2 0 μ m 3 30 J/m2 1 2 實施例22 0.2 0 μ m 290 J/m2 8 實施例23 0.1 8 μ in 3 00 J/m2 4IIH1I C:\2D-OODE\91-O9\91114303.ptd Page 141 1304060 V. INSTRUCTIONS (137) Table 4 Acid generator resin acid diffusion control agent Solvent Example 20 A-6(2) a-]( 6) Bl(lOO) D'V(0.2) G,](400) G - 3(400) Example 21 A-6(2) al(6) B-2(l00) D-3(0.2) Gl (400) G, 3 (400) Example 22 A-6(2) al(6) B-14(100) D-3(0.2) Gl(400) G-3(400) Example 23 A-6 (2) a-3(6) B-4(100) D-2(0.2) Gl(400) G-3(400) Table 5 Thickness PB Radiation PEB (A) Temperature Time Temperature Time (°C) (seconds) (°C) (seconds) Example 20 5,000 120 90 KrF excimer laser 130 90 Example 21 5,000 120 90 KrF excimer laser 130 90 Example 22 5,000 90 90 KtF excimer laser 100 90 Example 23 5,000 100 90 KrF excimer laser 100 90 _ 11 C:\2D-CODE\91-09\91114303.ptd Page 142 1304060 V. Invention description (138) Table 6 Resolution sensitivity reticle pattern fidelity embodiment 20 0.1 8 μ m 3 10 J/m2 10 Example 21 0.2 0 μ m 3 30 J/m 2 1 2 Example 22 0.2 0 μ m 290 J/m 2 8 Example 23 0.1 8 μ in 3 00 J/m 2 4

C:\2D-CODE\91-09\91114303.ptd 第143頁 1304060 五、發明說明(139)表7 括號中之單位:重量份數 酸產生劑 棚旨 酸擴散控制劑 其他添加劑 溶劑 實施例24 A-8(5) B-8(92) D-3(0.10) F-2(8) G-3(700) 實施例25 A-8(5) B-8(92) D-3(0.10) F-2(8) G-3(700) 實施例26 A-2(5) B-8(92) D-3(0.30) F-3(8) G-3(700) 實施例27 A-l(5) B-8(92) D-3(0.30) F-3(8) G-3(700) 實施例28 A-l(5) B-8(92) D-3(0.30) F-2(8) G-3(700) 實施例29 A-7(5) B-8(92) D-3(0.15) F-2(8) G-3(700) 實施例30 A-4(5) B-8(92) D-3(0.10) F-2(8) G-3(700) 實施例31 A-l(5.5) B-7(65.8) B-15(28.2) D-5(0.43) F&gt;2(6) G-4(500) G-5(200) 實施例32 A-l(5.5) B-7(65.8) B-l 5(28.2) D-5(0.43) F-2(6) G-4(500) G-5(200) 實施例33 Α·1(5.5) B-7(28.2) B-15(65.8) D-5(0.43) F-2⑹ G-3(470) G-4(200) G-5(30) 實施例34 A-l(5.5) B-7(28.2) B-15(65.8) D-5(0.43) F-2(6) G-3(470) G_4(200) G-5(30) 比較實施例2 a-4(5) B-8(92) D-3(0.30) F-2 (8) G-3(700)C:\2D-CODE\91-09\91114303.ptd Page 143 1304060 V. Inventive Note (139) Table 7 Units in parentheses: parts by weight acid generator shed acid diffusion control agent other additive solvent Example 24 A-8(5) B-8(92) D-3(0.10) F-2(8) G-3(700) Example 25 A-8(5) B-8(92) D-3(0.10 F-2(8) G-3(700) Example 26 A-2(5) B-8(92) D-3(0.30) F-3(8) G-3(700) Example 27 Al (5) B-8(92) D-3(0.30) F-3(8) G-3(700) Example 28 Al(5) B-8(92) D-3(0.30) F-2( 8) G-3 (700) Example 29 A-7 (5) B-8 (92) D-3 (0.15) F-2 (8) G-3 (700) Example 30 A-4 (5) B-8(92) D-3(0.10) F-2(8) G-3(700) Example 31 Al(5.5) B-7(65.8) B-15(28.2) D-5(0.43) F&gt ; 2(6) G-4(500) G-5(200) Example 32 Al(5.5) B-7(65.8) Bl 5(28.2) D-5(0.43) F-2(6) G-4 (500) G-5 (200) Example 33 Α·1(5.5) B-7(28.2) B-15(65.8) D-5(0.43) F-2(6) G-3(470) G-4(200 G-5(30) Example 34 Al(5.5) B-7(28.2) B-15(65.8) D-5(0.43) F-2(6) G-3(470) G_4(200) G- 5(30) Comparative Example 2 a-4(5) B-8(92) D-3(0.30) F-2 (8) G-3(700)

画·· C:\2D-OODE\91-O9\91114303.ptd 第144頁 1304060 光阻劑塗層厚度 基材 PB PEB (//m) 溫度 時間 溫度 時間 (°C) (sec) (°C) (sec) 實施例24 0.34 ARC25 130 90 130 90 實施例25 0.34 ARC25 130 90 130 90 實施例26 0.34 ARC25 130 90 130 90 實施例27 0.34 ARC25 130 90 130 90 實施例28 0.34 ARC25 130 90 130 90 實施例29 0.34 ARC25 130 90 130 90 實施例30 0.34 ARC25 130 90 130 90 實施例31 0.34 ARC25 130 90 130 90 實施例32 0.34 ARC25 130 90 130 90 實施例33 0.34 ARC25 130 90 130 90 實施例34 0.34 ARC25 130 90 130 90 比較實施例2 0.34 ARC25 130 90 130 90 輻射透射率 (%) 敏感度 (J/m2) 解析度 (#m) 圖案形狀 顯影瑕疵 量 曝光機器 瑕疵檢查裝置 實施例24 71 238 0.13 良好 0 S203B KLA2115 實施例25 71 238 0.13 良好 0 S306C KLA2351 實施例26 69 232 0.13 良好 12 S203B KLA2115 實施例27 70 229 0.13 良好 0 S203B KLA2115 實施例28 70 229 0.13 良好 0 S306C KLA2351 實施例29 72 249 0.13 良好 4 S203B KLA2115 實施例30 70 283 0.13 良好 1 S203B KLA2115 實施例31 71 252 0.13 良好 0 S203B KLA2115 實施例32 71 252 0.13 良好 0 S306C KLA2351 實施例33 70 254 0.13 良好 0 S203B KLA2115 實施例34 70 254 0.13 良好 0 S306C KLA2351 比較實施例2 70 224 0.13 良好 526 S203B KLA2115 五、發明說明(140) 表8 表9 ΙΙΙΒϋΙΙPainting·· C:\2D-OODE\91-O9\91114303.ptd Page 144 1304060 photoresist coating thickness substrate PB PEB (//m) temperature time temperature time (°C) (sec) (°C (sec) Example 24 0.34 ARC25 130 90 130 90 Example 25 0.34 ARC25 130 90 130 90 Example 26 0.34 ARC25 130 90 130 90 Example 27 0.34 ARC25 130 90 130 90 Example 28 0.34 ARC25 130 90 130 90 Implementation Example 29 0.34 ARC25 130 90 130 90 Example 30 0.34 ARC25 130 90 130 90 Example 31 0.34 ARC25 130 90 130 90 Example 32 0.34 ARC25 130 90 130 90 Example 33 0.34 ARC25 130 90 130 90 Example 34 0.34 ARC25 130 90 130 90 Comparative Example 2 0.34 ARC25 130 90 130 90 Radiation Transmittance (%) Sensitivity (J/m2) Resolution (#m) Pattern Shape Development Exposure Apparatus 瑕疵 Inspection Apparatus Example 24 71 238 0.13 Good 0 S203B KLA2115 Example 25 71 238 0.13 Good 0 S306C KLA2351 Example 26 69 232 0.13 Good 12 S203B KLA2115 Example 27 70 229 0.13 Good 0 S203B KLA2115 Example 28 70 229 0.13 Good 0 S306C KLA2351 Example 29 72 249 0.13 Good 4 S203B KLA2115 Example 30 70 283 0.13 Good 1 S203B KLA2115 Example 31 71 252 0.13 Good 0 S203B KLA2115 Example 32 71 252 0.13 Good 0 S306C KLA2351 Example 33 70 254 0.13 Good 0 S203B KLA2115 Example 34 70 254 0.13 Good 0 S306C KLA2351 Comparative Example 2 70 224 0.13 Good 526 S203B KLA2115 V. Invention Description (140) Table 8 Table 9 ΙΙΙΒϋΙΙ

C:\2D-C0DE\91-09\91114303.ptd 第145頁 1304060 五、發明說明(141) 本發明之酸產生劑(I )展現相當高的可燃性且沒有生物 累積,及產生展現高酸度及高沸點之酸。此酸產生劑對深 紫外光線諸如KrF準分子雷射、ArF準分子雷射、F2準分子 雷射、或EUV、及電子束展現高透明度,及產生作為對以 上之輻射反應之光酸產生劑或作為對熱反應之熱敏感性酸 產生劑的績酸(I - a)。尤其,可將此酸產生劑適當地使用 作為有用於化學放大光阻劑之輻射敏感性樹脂組成物中之 光酸產生劑。 本發明之磺酸(I -a)有用作為用於在形成光阻劑圖案之 過程中所設置之上層或下層上形成抗反射薄膜之成份。本 發明之磺酸鹽(1C)及磺醯鹵化合物(4A)有用作為用於合成 酸產生劑(I )之反應中間材料。此外,磺酸(丨_a)、磺酸鹽 (1 C )、及磺醯鹵化合物(4 A )有用作為用於合成磺酸衍生物 之原料。 含有酸產生劑(I )之本發明之輻射敏感性樹脂組成物係 對深紫外光線諸如KrF準分子雷射、人1^準分子雷射、1?2準 刀子雷射、或EUV、及電子束反應,其對輻射高度敏感, 於光阻劑塗層中具有適度短的擴散長度,顯現優異的解析 度],光罩圖案密度之低相關性,且可適當地使用於預期 可又彳寸愈來愈微小之以積體電路之製造為代表之微製造的 領域中。 本發明顯然可依據以上之教授而進行各種修改及變化。 因此,應明瞭本發明可在隨附之申請專利範圍的範圍内, 以除明確說明於文中之外的其他方式實行。C:\2D-C0DE\91-09\91114303.ptd Page 145 1304060 V. INSTRUCTION DESCRIPTION (141) The acid generator (I) of the present invention exhibits a relatively high flammability and no bioaccumulation, and produces a high acidity. And high boiling acid. The acid generator exhibits high transparency to deep ultraviolet light such as KrF excimer laser, ArF excimer laser, F2 excimer laser, or EUV, and electron beam, and produces a photoacid generator as a reaction to the above radiation. Or as a heat-sensitive acid generator for heat reaction (I - a). In particular, the acid generator can be suitably used as a photoacid generator in a radiation-sensitive resin composition for chemically amplifying a photoresist. The sulfonic acid (I - a) of the present invention is useful as a component for forming an antireflection film on the upper layer or the lower layer provided in the process of forming a photoresist pattern. The sulfonate (1C) and the sulfonium halide compound (4A) of the present invention are useful as a reaction intermediate material for synthesizing the acid generator (I). Further, a sulfonic acid (丨_a), a sulfonate (1 C ), and a sulfonium halide compound (4 A ) are useful as a raw material for synthesizing a sulfonic acid derivative. The radiation-sensitive resin composition of the present invention containing an acid generator (I) is a deep ultraviolet light such as a KrF excimer laser, a human excimer laser, a 1?2 quasi-knife laser, or an EUV, and an electron Beam reaction, which is highly sensitive to radiation, has a moderately short diffusion length in the photoresist coating, exhibits excellent resolution], low correlation of mask pattern density, and can be suitably used in anticipation Increasingly, it is in the field of microfabrication represented by the manufacture of integrated circuits. It is apparent that various modifications and changes can be made in the present invention in light of the above teachings. Therefore, it is to be understood that the invention may be practiced otherwise than as specifically described herein.

第146頁Page 146

1304060 圖式簡單說明 圖1顯示酸產生劑(A-1 )之1Η-NMR分析結果。 圖2顯示酸產生劑(A- 1 )之陽離子基團的質量分析結果。 圖3顯示酸產生劑(A-1)之陰離子基團的質量分析結果。 圖4顯示酸產生劑(A - 2 )之1 Η - N M R分析結果。 圖5顯示酸產生劑(A - 2 )之陽離子基團的質量分析結果。 圖6顯示酸產生劑(A-2 )之陰離子基團的質量分析結果。 圖7顯示酸產生劑(A-3)之1Η-NMR分析結果。 圖8顯示酸產生劑(A-3)之陽離子基團的質量分析結果。 圖9顯示酸產生劑(A-3)之陰離子基團的質量分析結果。 圖10顯示酸產生劑(A-4)之1 H-NMR分析結果。 圖11顯示酸產生劑(A-5)之1 H-NMR分析結果。 圖1 2顯示酸產生劑(A- 5 )之陽離子基團的質量分析結 果。 圖1 3顯示酸產生劑(A-5 )之陰離子基團的質量分析結 果。 圖1 4顯示酸產生劑(A- 6 )之陽離子基團的質量分析結 果。 圖1 5顯示酸產生劑(A-6 )之陰離子基團的質量分析結 果01304060 Brief Description of the Drawing Figure 1 shows the results of 1 Η-NMR analysis of the acid generator (A-1). Figure 2 shows the results of mass analysis of the cationic group of the acid generator (A-1). Figure 3 shows the results of mass analysis of the anion group of the acid generator (A-1). Figure 4 shows the results of 1 Η - N M R analysis of the acid generator (A - 2 ). Figure 5 shows the results of mass analysis of the cationic groups of the acid generator (A-2). Fig. 6 shows the results of mass analysis of an anionic group of the acid generator (A-2). Fig. 7 shows the results of 1 Η-NMR analysis of the acid generator (A-3). Fig. 8 shows the results of mass analysis of the cationic group of the acid generator (A-3). Figure 9 shows the results of mass analysis of the anion group of the acid generator (A-3). Fig. 10 shows the results of 1 H-NMR analysis of the acid generator (A-4). Figure 11 shows the results of 1 H-NMR analysis of the acid generator (A-5). Fig. 1 2 shows the results of mass analysis of the cationic groups of the acid generator (A-5). Fig. 13 shows the results of mass analysis of the anion group of the acid generator (A-5). Fig. 14 shows the results of mass analysis of the cationic groups of the acid generator (A-6). Figure 15 shows the mass analysis result of the anion group of the acid generator (A-6).

C:\2D-C0DE\91-09\91114303.ptd 第147頁C:\2D-C0DE\91-09\91114303.ptd第147页

Claims (1)

JUL 0 2 2008 替换本 1304060 六、申請專利範圍 I 一種具有以下化學式(Ι-A)或(I-B)之結構之酸產生 劑,JUL 0 2 2008 Replacement 1304060 VI. Scope of Application I An acid generator having the structure of the following chemical formula (Ι-A) or (I-B), 其中Z1及Z2分別代表氟原子或具丨_丨〇個碳原子之直鏈或分 支鏈全氟烷基,Y1代表單鍵、-〇—、__s—、羰基、亞磺醯 基、篮基、亞曱基、1,;[-伸乙基、U —伸乙基、伸丙 基、1-曱基伸丙基、1-乙基伸丙基、三亞甲基、二氟亞甲 基、四氟-1,2 -伸乙基、1,2 -伸苯基、;[,3 —伸苯基、或 1,4-伸苯基,R’代表酮基(=〇)、羥基、羧基、甲醯基、具 1-10個碳原子之直鏈或分支鏈烷基、具個碳原子之直 鍵或分支鏈亞乙烯基、具1 —12個碳原子之單價環有機基 團、具6-20個碳原子之芳基、具卜1〇個碳原子之直鏈或分 支鏈院氧基、具6-20個碳原子之芳氧基、具2_10個碳原子 之直鏈或分支鏈烷羰基、具7 —20個碳原子之芳羰基、具 1 -10個碳原子之直鏈或分支鏈烷氧羰基、具7 — 20個碳原子 之芳氧羰基,k為0或以上之整數,及η為〇-5之整數。 II I I 1 1 I I 91114303(替換)-2.ptc 第148頁 1304060 案號91Π 43的 六、申請專利範圍 月 曰 修正 之i續=ΐί:]:其係由以下化學式(η)或 所 示 η Ζ1 - Y1—c—S03- M+ (1-A) 1-C-S03- M+ (l-B) η !:丨了二別1表氟原子或具卜10個碳原子之直鏈或分 叉鍵全氣烧基,γι获矣留 1 ^ ^ 代表早鍵、-0—、-S-、羰基、亞續酿 ί:; 基、伸乙基、伸乙基、伸丙 基、卜甲基伸丙基、i一乙基伸丙基、三亞甲基、二 基、四氟-1,2-伸乙基、丨,2-伸苯基、丨,3_伸苯基、或 1,4伸笨基,R代表酮基(=〇)、羥基、羧基、甲醯基、具 1 -10個碳原子之直鏈或分支鏈烷基、具卜1〇個碳原子之直 鏈或分支鏈亞乙烯基、具卜丨2個碳原子之單價環有機基 團、具6-20個碳原子之芳基、具卜1〇個碳原子之直鏈或分 支鏈烧氧基、具6-20個破原子之芳氧基、具2 —1〇個碳原子 之直鏈或分支鏈烧羰基、具7-20個碳原子之芳魏基、具 卜10個碳原子之直鏈或分支鏈烷氧羰基、具7 —2〇個碳原子 之芳氧羰基,k為0或以上之整數,η為0-5之整數,及M+為 91114303(替換)-2.ptc 第149頁 3:如申請專利範圍第2項之酸產生劑,其中M+係由以下 化學式(i )所示之你陽離子, R2— R 3 (i) /、中R、 R 、及1^3分別代表具1—1 〇個碳原子之經取代或未 經取代、直鏈或分支鏈烷基,具6—18個碳原子之經取代 未經取代芳基,或基卿、R2、及R3之兩者或以上與化學 式中之硫原子一起形成環。 上如申請專利範圍第2項之酸產纟劑’其中m+係以下化 學式(11)之鎭陽離子, (ϋ) R4 — 1+ —R5 其中R4及R5分別代表具HO個碳原子之經取代或未經取 代、直鏈或分支鏈烷基,且6 5 —猶酸產制、1G子式节之碘原子一起形成環。 5·種t產生Μ,其係以下化學式(2-A)或(2-# 醯基氧醯亞胺化合物, 乂 之N-石兴 第150頁 91114303(替換)_2.pt( 1304060Wherein Z1 and Z2 represent a fluorine atom or a linear or branched perfluoroalkyl group having 碳_丨〇 a carbon atom, and Y1 represents a single bond, -〇-, __s-, carbonyl, sulfinylene, basket, Amidino, 1,; [-extended ethyl, U-extended ethyl, propyl, 1-mercaptopropyl, 1-ethylpropionyl, trimethylene, difluoromethylene, tetrafluoro- 1,2-extended ethyl, 1,2-phenylene, [,3-phenylene, or 1,4-phenylene, R' represents keto (=〇), hydroxyl, carboxyl, formazan a straight or branched alkyl group having 1 to 10 carbon atoms, a straight or branched chain vinylidene group having one carbon atom, a monovalent cyclic organic group having 1 to 12 carbon atoms, having 6-20 An aryl group of a carbon atom, a linear or branched chain oxy group having 1 carbon atom, an aryloxy group having 6 to 20 carbon atoms, a linear or branched alkanecarbonyl group having 2 to 10 carbon atoms, An arylcarbonyl group having 7 to 20 carbon atoms, a linear or branched alkoxycarbonyl group having 1 to 10 carbon atoms, an aryloxycarbonyl group having 7 to 20 carbon atoms, k being an integer of 0 or more, and η Is an integer of 〇-5. II II 1 1 II 91114303 (replacement) - 2.ptc Page 148 1304060 Case No. 91 Π 43 s. Patent application scope 曰 曰 ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ : : : : ΐ : : : : Ζ1 - Y1—c—S03- M+ (1-A) 1-C-S03- M+ (lB) η !: 丨 二 1 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表Gas-burning group, γι retained retention 1 ^ ^ represents early bond, -0-, -S-, carbonyl, sub-continuation ί:; base, ethyl, ethylene, propyl, methyl propyl, I-ethyl propyl, trimethylene, diyl, tetrafluoro-1,2-extended ethyl, anthracene, 2-phenylene, anthracene, 3-phenylene, or 1,4-extension base, R a keto group (=〇), a hydroxyl group, a carboxyl group, a carbhydryl group, a linear or branched alkyl group having 1 to 10 carbon atoms, a linear or branched chain vinylidene group having 1 carbon atom, Divalent monocyclic organic group of 2 carbon atoms, aryl group of 6-20 carbon atoms, linear or branched alkoxy group having 1 carbon atom, 6-20 broken atoms An oxy group, a linear or branched chain carbonyl group having 2 to 1 carbon atoms, An aryl-Wiki group having 7 to 20 carbon atoms, a linear or branched alkoxycarbonyl group having 10 carbon atoms, an aryloxycarbonyl group having 7 to 2 carbon atoms, k being an integer of 0 or more, η An integer of 0-5, and M+ is 91114303 (replacement)-2.ptc page 149 3: An acid generator according to claim 2, wherein M+ is a cation represented by the following chemical formula (i), R2—R 3 (i) /, wherein R, R and 1^3 represent substituted or unsubstituted, straight or branched alkyl groups having from 1 to 1 carbon atoms, respectively, having from 6 to 18 carbons The atom is substituted with an unsubstituted aryl group, or two or more of the group, R2, and R3 together with a sulfur atom in the chemical formula form a ring. The acid eliminator as described in claim 2, wherein m+ is a ruthenium cation of the following formula (11), (ϋ) R4 — 1+ — R5 wherein R 4 and R 5 each represent a substituted carbon with HO or Unsubstituted, linear or branched alkyl groups, and 6 5 - succinic acid, iodine atoms of the 1G sub-form form together form a ring. 5. The species t produces hydrazine, which is the following chemical formula (2-A) or (2-# 醯 醯 醯 醯 化合物 化合物 , N 150 150 150 150 150 150 150 150 150 150 150 150 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 (2 -A) (2-B) ;lZ入及Z 別代表氟原子或具卜10個碳原子之直鏈或分 ^鏈^亂烷基,Yi代表單鍵、—〇—、—s—、羰基、亞磺醯 ς石貝醯基、亞甲基、1,:1 -伸乙基、1,2-伸乙基、伸丙 基 1-甲基伸丙基、卜乙基伸丙基、三亞甲基 甲 基、四氟―1,2—伸乙基、丨,2 -伸苯基、1,3 -伸苯基、或 1,4-伸笨基,R’代表_基(=〇)、羥基、羧基、曱醯基、具 1 -10個碳原子之直鏈或分支鏈烷基、具丨 — iO個碳原子之直 鍵或分支鏈亞乙烯基、具卜12個碳原子之單價環有機基 團、具6-20個碳原子之芳基、具卜10個碳原子之直鏈或分 支鏈炫氧基、具6-20個碳原子之芳氧基、具2-1〇個碳原子 之直鏈或分支鏈烷羰基、具7-20個碳原子之芳羰基、具 卜10個碳原子之直鏈或分支鏈烷氧羰基、具7 —2〇個碳原子 之芳氧羰基,k為0或以上之整數,η為0-5之整數,r6及R7 分別代表氫原子或經取代或未經取代之單價有機基團,或(2 -A) (2-B) ; lZ and Z represent a fluorine atom or a linear or branched chain of 10 carbon atoms, and Yi represents a single bond, —〇—, —s— , carbonyl, sulfoxime, beryllyl, methylene, 1, 1: 1-ethyl, 1,2-extended ethyl, propyl 1-methylpropyl, ethyl ethyl propyl, Trimethylenemethyl, tetrafluoro-, 1,2-extended ethyl, anthracene, 2-phenylene, 1,3-phenylene, or 1,4-extension, R' represents _ group (=〇 a hydroxyl group, a carboxyl group, a fluorenyl group, a linear or branched alkyl group having 1 to 10 carbon atoms, a straight or branched chain vinylidene group having 丨-iO carbon atoms, having 12 carbon atoms Monovalent ring organic group, aryl group having 6-20 carbon atoms, linear or branched chain decyloxy group having 10 carbon atoms, aryloxy group having 6-20 carbon atoms, 2-1〇 a linear or branched alkanecarbonyl group of one carbon atom, an aromatic carbonyl group having 7 to 20 carbon atoms, a linear or branched alkoxycarbonyl group having 10 carbon atoms, and an aryloxy group having 7 to 2 carbon atoms a carbonyl group, k is an integer of 0 or more, η is an integer of 0-5, and r6 and R7 each represent a hydrogen atom or The substituted or unsubstituted monovalent organic group, or 91114303(替換)-2.Ptc 第151頁91114303 (replace)-2.Ptc第151页 ο (2-6)ο (2-6) 6 · —種正型輻射敏感性樹脂組成物,包括:(A)申請專 利範圍第1項之酸產生劑,及(B)包含酸可裂解基團之鹼可 溶解或鹼可低度溶解之樹脂,當酸可裂解基團解離時,此 樹脂成為可溶於鹼。 7. 一種正型輻射敏感性樹脂組成物,包括:(A)申請專 利範圍第1項之酸產生劑,(C)鹼可溶解樹脂,及(D)鹼溶 角牛度控制劑。6 - a positive type radiation-sensitive resin composition comprising: (A) an acid generator of the first application scope of the patent, and (B) a base containing an acid cleavable group or a base which is lowly soluble Resin, when the acid cleavable group dissociates, the resin becomes soluble in alkali. A positive radiation-sensitive resin composition comprising: (A) an acid generator according to item 1 of the patent application, (C) an alkali-soluble resin, and (D) an alkali-soluble angle control agent. 91114303(替換)-2.Ptc 第152頁 1304060 案號 91114303 年 月 修正 六、申請專利範圍 8. —種負型輻射敏感性樹脂組成物,包括:(A)申請專 利範圍第1項之酸產生劑,(C)驗可溶解樹脂,及(E)可在 酸之存在下交聯鹼可溶解樹脂之化合物。91114303 (replacement)-2.Ptc Page 152 1304060 Case No. 91914303 Revision of the year 6. Patent application scope 8. A negative-type radiation-sensitive resin composition, including: (A) Acid production in the first application of the patent scope The agent (C) is a soluble resin, and (E) a compound which can crosslink the alkali-soluble resin in the presence of an acid. 91114303(替換)-2.ptc 第153頁91114303 (replace)-2.ptc第153页
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