AU2002239563A1 - Photoacid generators and photoresists comprising same - Google Patents

Photoacid generators and photoresists comprising same

Info

Publication number
AU2002239563A1
AU2002239563A1 AU2002239563A AU3956302A AU2002239563A1 AU 2002239563 A1 AU2002239563 A1 AU 2002239563A1 AU 2002239563 A AU2002239563 A AU 2002239563A AU 3956302 A AU3956302 A AU 3956302A AU 2002239563 A1 AU2002239563 A1 AU 2002239563A1
Authority
AU
Australia
Prior art keywords
photoresists
same
photoacid generators
photoacid
generators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002239563A
Other languages
English (en)
Inventor
James F Cameron
Thomas M. Zydowsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22928331&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU2002239563(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2002239563A1 publication Critical patent/AU2002239563A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/02—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof
    • C07C303/20—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof by addition of sulfurous acid or salts thereof to compounds having carbon-to-carbon multiple bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/24—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
AU2002239563A 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same Abandoned AU2002239563A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24584800P 2000-11-03 2000-11-03
US60/245,848 2000-11-03
PCT/US2001/047370 WO2002042845A2 (en) 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same

Publications (1)

Publication Number Publication Date
AU2002239563A1 true AU2002239563A1 (en) 2002-06-03

Family

ID=22928331

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002239563A Abandoned AU2002239563A1 (en) 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same

Country Status (4)

Country Link
US (1) US6849374B2 (https=)
JP (7) JP4211971B2 (https=)
AU (1) AU2002239563A1 (https=)
WO (1) WO2002042845A2 (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3425606B2 (ja) 1993-04-09 2003-07-14 佐藤 朝夫 水処理方法
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
AU2002239563A1 (en) * 2000-11-03 2002-06-03 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
TWI304060B (en) * 2001-06-29 2008-12-11 Jsr Corp Acid generator and radiation-sensitive resin composition
JP4924256B2 (ja) * 2001-06-29 2012-04-25 Ｊｓｒ株式会社 感放射線性樹脂組成物
CN1916760B (zh) 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP4590821B2 (ja) * 2003-01-14 2010-12-01 コニカミノルタホールディングス株式会社 活性光線硬化型インク組成物、及びそれを用いた画像形成方法
JP4366947B2 (ja) * 2003-02-13 2009-11-18 コニカミノルタホールディングス株式会社 活性光線硬化型インク組成物、及びそれを用いた画像形成方法
US7122294B2 (en) * 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7776504B2 (en) * 2004-02-23 2010-08-17 Nissan Chemical Industries, Ltd. Dye-containing resist composition and color filter using same
WO2005089355A2 (en) * 2004-03-16 2005-09-29 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos)
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4452632B2 (ja) * 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP4774996B2 (ja) * 2005-07-26 2011-09-21 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP1780199B1 (en) * 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
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JP5746818B2 (ja) * 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
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JP5287552B2 (ja) * 2009-07-02 2013-09-11 信越化学工業株式会社 光酸発生剤並びにレジスト材料及びパターン形成方法
JP5675125B2 (ja) 2009-09-30 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法
TWI464140B (zh) 2009-12-10 2014-12-11 羅門哈斯電子材料有限公司 膽酸鹽光酸產生劑及含該光酸產生劑之光阻
CN102225924B (zh) 2009-12-10 2015-04-01 罗门哈斯电子材料有限公司 光酸发生剂和包含该光酸发生剂的光致抗蚀剂
JP5851688B2 (ja) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性組成物
JP5216032B2 (ja) 2010-02-02 2013-06-19 信越化学工業株式会社 新規スルホニウム塩、高分子化合物、高分子化合物の製造方法、レジスト材料及びパターン形成方法
KR101813298B1 (ko) 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도
JP5969171B2 (ja) * 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
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JP5411893B2 (ja) 2011-05-30 2014-02-12 信越化学工業株式会社 スルホニウム塩、高分子化合物、該高分子化合物を用いた化学増幅型レジスト組成物及びレジストパターン形成方法
JP5491450B2 (ja) 2011-05-30 2014-05-14 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料、該化学増幅レジスト材料を用いたパターン形成方法。
US9223208B2 (en) * 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
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