AU2001286743A1 - Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same - Google Patents

Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same

Info

Publication number
AU2001286743A1
AU2001286743A1 AU2001286743A AU8674301A AU2001286743A1 AU 2001286743 A1 AU2001286743 A1 AU 2001286743A1 AU 2001286743 A AU2001286743 A AU 2001286743A AU 8674301 A AU8674301 A AU 8674301A AU 2001286743 A1 AU2001286743 A1 AU 2001286743A1
Authority
AU
Australia
Prior art keywords
oxyimidosulfonate
photoresists
same
photoacid generators
oxime sulfonate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001286743A
Inventor
James F Cameron
Gerhard Pohlers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001286743A1 publication Critical patent/AU2001286743A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AU2001286743A 2000-08-25 2001-08-24 Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same Abandoned AU2001286743A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/645,198 US6482567B1 (en) 2000-08-25 2000-08-25 Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
US09/645,198 2000-08-25
PCT/US2001/026526 WO2002017019A2 (en) 2000-08-25 2001-08-24 Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same

Publications (1)

Publication Number Publication Date
AU2001286743A1 true AU2001286743A1 (en) 2002-03-04

Family

ID=24588030

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001286743A Abandoned AU2001286743A1 (en) 2000-08-25 2001-08-24 Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same

Country Status (4)

Country Link
US (1) US6482567B1 (en)
JP (3) JP5342094B2 (en)
AU (1) AU2001286743A1 (en)
WO (1) WO2002017019A2 (en)

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JP4493938B2 (en) * 2003-06-06 2010-06-30 東京応化工業株式会社 Positive resist composition and resist pattern forming method
KR20050108277A (en) * 2004-05-12 2005-11-16 주식회사 동진쎄미켐 Photoactive monomer, photosensitive polymer and chemically amplified photoresist composition including the same
KR101193824B1 (en) * 2004-07-20 2012-10-24 시바 홀딩 인크 Oxime derivatives and the use thereof as latent acids
JP4566861B2 (en) * 2005-08-23 2010-10-20 富士通株式会社 Resist composition, method for forming resist pattern, semiconductor device and method for manufacturing the same
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
JP5851688B2 (en) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photosensitive composition
US8343706B2 (en) 2010-01-25 2013-01-01 International Business Machines Corporation Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same
JP5782283B2 (en) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Novel polymer and photoresist compositions
US20110300367A1 (en) 2010-06-07 2011-12-08 Ching-Kee Chien Optical Fiber With Photoacid Coating
US9322986B2 (en) 2013-06-24 2016-04-26 Corning Incorporated Optical fiber coating for short data network
JPWO2020158537A1 (en) * 2019-01-31 2021-12-09 株式会社Adeka A method for producing a compound, an acid generator, a composition, a cured product, a cured product, and a method for producing a pattern coating film.

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DE69027799T2 (en) * 1989-03-14 1997-01-23 Ibm Chemically amplified photoresist
EP0571330B1 (en) * 1992-05-22 1999-04-07 Ciba SC Holding AG High-resolution photoresist with enhanced sensitivity for I-line exposure
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JP3587413B2 (en) * 1995-12-20 2004-11-10 東京応化工業株式会社 Chemically amplified resist composition and acid generator used therein
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JP3661721B2 (en) * 1996-10-15 2005-06-22 信越化学工業株式会社 Chemically amplified positive resist material
JP3995369B2 (en) * 1998-12-07 2007-10-24 富士フイルム株式会社 Positive photoresist composition
JP3902835B2 (en) * 1997-06-27 2007-04-11 東京応化工業株式会社 Positive photoresist composition
JP3473887B2 (en) * 1997-07-16 2003-12-08 東京応化工業株式会社 Composition for forming antireflection film and method for forming resist pattern using the same
US6037107A (en) * 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
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DK199901098A (en) * 1998-08-18 2000-02-19 Ciba Sc Holding Ag Sylphony oxymers for in-line photoresists with high sensitivity and high resistance thickness
TW575792B (en) * 1998-08-19 2004-02-11 Ciba Sc Holding Ag New unsaturated oxime derivatives and the use thereof as latent acids
JP2000089458A (en) * 1998-09-08 2000-03-31 Tokyo Ohka Kogyo Co Ltd Electron beam negative resist composition
JP4131062B2 (en) * 1998-09-25 2008-08-13 信越化学工業株式会社 Novel lactone-containing compound, polymer compound, resist material, and pattern forming method
JP4007570B2 (en) * 1998-10-16 2007-11-14 富士フイルム株式会社 Positive resist composition
JP2000231195A (en) * 1999-02-09 2000-08-22 Fuji Photo Film Co Ltd Positive silicone-containing photosensitive composition
SG78412A1 (en) * 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP4029558B2 (en) * 1999-11-09 2008-01-09 Ｊｓｒ株式会社 N-sulfonyloxyimide compound and radiation-sensitive resin composition using the same

Also Published As

Publication number Publication date
WO2002017019A2 (en) 2002-02-28
JP2004507777A (en) 2004-03-11
JP5342094B2 (en) 2013-11-13
JP2013145383A (en) 2013-07-25
US6482567B1 (en) 2002-11-19
WO2002017019A3 (en) 2002-08-22
JP2015180957A (en) 2015-10-15

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