JP4198251B2 - 電力用半導体装置およびその製造方法 - Google Patents

電力用半導体装置およびその製造方法 Download PDF

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Publication number
JP4198251B2
JP4198251B2 JP00171399A JP171399A JP4198251B2 JP 4198251 B2 JP4198251 B2 JP 4198251B2 JP 00171399 A JP00171399 A JP 00171399A JP 171399 A JP171399 A JP 171399A JP 4198251 B2 JP4198251 B2 JP 4198251B2
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JP2000200906A (ja
JP2000200906A5 (https=
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茂 楠
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP00171399A priority Critical patent/JP4198251B2/ja
Priority to US09/334,598 priority patent/US6323509B1/en
Publication of JP2000200906A publication Critical patent/JP2000200906A/ja
Priority to US09/956,125 priority patent/US6605830B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP00171399A 1999-01-07 1999-01-07 電力用半導体装置およびその製造方法 Expired - Lifetime JP4198251B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP00171399A JP4198251B2 (ja) 1999-01-07 1999-01-07 電力用半導体装置およびその製造方法
US09/334,598 US6323509B1 (en) 1999-01-07 1999-06-17 Power semiconductor device including a free wheeling diode and method of manufacturing for same
US09/956,125 US6605830B1 (en) 1999-01-07 2001-09-20 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00171399A JP4198251B2 (ja) 1999-01-07 1999-01-07 電力用半導体装置およびその製造方法

Related Child Applications (2)

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JP2008129705A Division JP4912353B2 (ja) 2008-05-16 2008-05-16 電力用半導体装置およびその製造方法
JP2008216442A Division JP4937213B2 (ja) 2008-08-26 2008-08-26 電力用半導体装置

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JP2000200906A JP2000200906A (ja) 2000-07-18
JP2000200906A5 JP2000200906A5 (https=) 2005-05-19
JP4198251B2 true JP4198251B2 (ja) 2008-12-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741836B2 (en) 2015-09-10 2017-08-22 Kabushiki Kaisha Toshiba Semiconductor device and method for driving same

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60139386D1 (de) 2001-02-02 2009-09-10 Mitsubishi Electric Corp Halbleiteranordnung mit einem bipolartransistor mit isoliertem gate und einer freilaufdiode
JP2002367988A (ja) * 2001-06-12 2002-12-20 Tokyo Inst Of Technol 複合集積回路及びその製造方法
US20040044756A1 (en) * 2002-08-30 2004-03-04 General Instrument Corporation Method and apparatus for providing management access to devices behind a network address translator (NAT)
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EP1630872B1 (en) * 2003-06-05 2016-12-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and its manufacturing method
JP4857520B2 (ja) * 2004-01-07 2012-01-18 トヨタ自動車株式会社 バイポーラ半導体装置及びその製造方法
JP4791704B2 (ja) * 2004-04-28 2011-10-12 三菱電機株式会社 逆導通型半導体素子とその製造方法
JP2005354031A (ja) * 2004-05-13 2005-12-22 Mitsubishi Electric Corp 半導体装置
DE102004036278B4 (de) * 2004-07-27 2006-07-06 Siemens Ag Halbleiterbauelement und Verfahren zum Betreiben des Halbleiterbauelements als elektronischer Schalter
JP5055907B2 (ja) * 2005-10-05 2012-10-24 サンケン電気株式会社 半導体装置
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
JP4942367B2 (ja) * 2006-03-02 2012-05-30 新電元工業株式会社 半導体装置
JP2007240904A (ja) * 2006-03-09 2007-09-20 Hitachi Ltd プラズマディスプレイ装置
US7557386B2 (en) 2006-03-30 2009-07-07 Infineon Technologies Austria Ag Reverse conducting IGBT with vertical carrier lifetime adjustment
JP2007288094A (ja) * 2006-04-20 2007-11-01 Fuji Electric Device Technology Co Ltd Ｉｇｂｔとそれを駆動するゲート駆動回路
US8564057B1 (en) 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
JP2009004668A (ja) * 2007-06-25 2009-01-08 Toshiba Corp 半導体装置
DE102008045410B4 (de) 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
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WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
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JP5417811B2 (ja) * 2008-11-18 2014-02-19 株式会社デンソー 半導体装置
US9153674B2 (en) * 2009-04-09 2015-10-06 Infineon Technologies Austria Ag Insulated gate bipolar transistor
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JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
JP2011044529A (ja) * 2009-08-20 2011-03-03 Mitsubishi Electric Corp 金属製マスク
CN102005473B (zh) * 2009-08-28 2012-10-17 比亚迪股份有限公司 具有改进终端的igbt
JP5083468B2 (ja) * 2010-04-02 2012-11-28 トヨタ自動車株式会社 ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
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JP2021082725A (ja) * 2019-11-20 2021-05-27 三菱電機株式会社 半導体装置
JP7584954B2 (ja) * 2020-09-14 2024-11-18 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7548776B2 (ja) * 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
CN114784098B (zh) * 2022-05-05 2025-10-21 成都智达和创信息科技有限公司 一种反向电流分布均匀的逆导型igbt

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE431381B (sv) 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
JPS59150471A (ja) * 1983-01-31 1984-08-28 Toshiba Corp 半導体装置
JP2706120B2 (ja) 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
US5017992A (en) 1989-03-29 1991-05-21 Asea Brown Boveri Ltd. High blocking-capacity semiconductor component
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5883402A (en) * 1995-11-06 1999-03-16 Kabushiki Kaisha Toshiba Semiconductor device and protection method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741836B2 (en) 2015-09-10 2017-08-22 Kabushiki Kaisha Toshiba Semiconductor device and method for driving same
US10050135B2 (en) 2015-09-10 2018-08-14 Kabushiki Kaisha Toshiba Semiconductor device and method for driving same

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JP2000200906A (ja) 2000-07-18
US6323509B1 (en) 2001-11-27
US6605830B1 (en) 2003-08-12

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