JP4196791B2 - SiC単結晶の製造方法 - Google Patents
SiC単結晶の製造方法 Download PDFInfo
- Publication number
- JP4196791B2 JP4196791B2 JP2003315361A JP2003315361A JP4196791B2 JP 4196791 B2 JP4196791 B2 JP 4196791B2 JP 2003315361 A JP2003315361 A JP 2003315361A JP 2003315361 A JP2003315361 A JP 2003315361A JP 4196791 B2 JP4196791 B2 JP 4196791B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- sic single
- crystal
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
上記Si融液にAlを10wt%添加することを特徴とするSiC単結晶の製造方法によって達成される。上記各金属の添加量はSi融液と添加金属との合計量を基準とした量である。
図示したSiC単結晶製造炉100は、黒鉛るつぼ10内のSi融液M内に内部から融液面Sへ向けて温度低下する温度勾配を維持しつつ、融液面Sの直下に黒鉛棒12により保持したSiC種結晶14を起点としてSiC単結晶を成長させる炉である。
10…黒鉛るつぼ
12…黒鉛棒
14…SiC種結晶
18…断熱材
20…石英管
22…誘導コイル
22A…誘導コイル22の上段コイル
22B…誘導コイル22の下段コイル
24…磁場コイル
M…Si融液
S…融液面
Claims (1)
- 黒鉛るつぼ内のSi融液内に内部から融液面に向けて温度低下する温度勾配を維持しつつ、該融液面の直下に保持したSiC種結晶を起点としてSiC単結晶を成長させる方法において、
上記Si融液にAlを10wt%添加することを特徴とするSiC単結晶の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003315361A JP4196791B2 (ja) | 2003-09-08 | 2003-09-08 | SiC単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003315361A JP4196791B2 (ja) | 2003-09-08 | 2003-09-08 | SiC単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005082435A JP2005082435A (ja) | 2005-03-31 |
JP4196791B2 true JP4196791B2 (ja) | 2008-12-17 |
Family
ID=34415652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003315361A Expired - Fee Related JP4196791B2 (ja) | 2003-09-08 | 2003-09-08 | SiC単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4196791B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4225296B2 (ja) | 2005-06-20 | 2009-02-18 | トヨタ自動車株式会社 | 炭化珪素単結晶の製造方法 |
JP4830496B2 (ja) * | 2006-01-12 | 2011-12-07 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP2007197231A (ja) * | 2006-01-24 | 2007-08-09 | Toyota Motor Corp | SiC単結晶の製造方法 |
JP4179331B2 (ja) * | 2006-04-07 | 2008-11-12 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP4811354B2 (ja) * | 2007-06-11 | 2011-11-09 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP4853449B2 (ja) * | 2007-10-11 | 2012-01-11 | 住友金属工業株式会社 | SiC単結晶の製造方法、SiC単結晶ウエハ及びSiC半導体デバイス |
JP4450074B2 (ja) * | 2008-01-15 | 2010-04-14 | トヨタ自動車株式会社 | 炭化珪素単結晶の成長方法 |
JP4697235B2 (ja) | 2008-01-29 | 2011-06-08 | トヨタ自動車株式会社 | p型SiC半導体単結晶の製造方法およびそれにより製造されたp型SiC半導体単結晶 |
JP4586857B2 (ja) | 2008-02-06 | 2010-11-24 | トヨタ自動車株式会社 | p型SiC半導体単結晶の製造方法 |
JP5355533B2 (ja) | 2010-11-09 | 2013-11-27 | 新日鐵住金株式会社 | n型SiC単結晶の製造方法 |
JP5439353B2 (ja) * | 2010-12-27 | 2014-03-12 | 新日鐵住金株式会社 | SiC単結晶の製造装置及びそれに用いられる坩堝 |
JP5568034B2 (ja) * | 2011-03-02 | 2014-08-06 | トヨタ自動車株式会社 | 半導体単結晶の製造装置および製造方法 |
JP5876390B2 (ja) | 2012-08-30 | 2016-03-02 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP2014088290A (ja) * | 2012-10-31 | 2014-05-15 | Kyocera Corp | 結晶の製造方法 |
JP5823947B2 (ja) * | 2012-12-27 | 2015-11-25 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
EP2881499B1 (en) | 2013-12-06 | 2020-03-11 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
JP6129065B2 (ja) * | 2013-12-06 | 2017-05-17 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
JP6533716B2 (ja) | 2015-08-06 | 2019-06-19 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
-
2003
- 2003-09-08 JP JP2003315361A patent/JP4196791B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005082435A (ja) | 2005-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4196791B2 (ja) | SiC単結晶の製造方法 | |
JP4179331B2 (ja) | SiC単結晶の製造方法 | |
JP7046117B2 (ja) | 金属るつぼ内に含まれる金属からベータ相の酸化ガリウム(β-Ga2O3)単結晶を成長させる方法 | |
JP4100228B2 (ja) | 炭化珪素単結晶とその製造方法 | |
CN102471927B (zh) | SiC单晶的制造方法 | |
KR101827928B1 (ko) | SiC 단결정의 제조 방법 | |
EP1978137A1 (en) | PROCESS FOR PRODUCING SiC SINGLE CRYSTAL | |
JP4811354B2 (ja) | SiC単結晶の製造方法 | |
US20120132130A1 (en) | METHOD OF PRODUCING SiC SINGLE CRYSTAL | |
JP2008105896A (ja) | SiC単結晶の製造方法 | |
JP4830496B2 (ja) | SiC単結晶の製造方法 | |
JP2019019037A (ja) | 炭化ケイ素単結晶の製造方法 | |
JP2006347865A (ja) | 化合物半導体単結晶成長用容器、化合物半導体単結晶、および化合物半導体単結晶の製造方法 | |
JP4265269B2 (ja) | SiC単結晶製造炉 | |
JP4930166B2 (ja) | 酸化アルミニウム単結晶の製造方法 | |
CN107532329B (zh) | SiC单晶的制造方法 | |
JP5262346B2 (ja) | シリコン単結晶の製造方法 | |
JP2004277266A (ja) | 化合物半導体単結晶の製造方法 | |
Blevins et al. | Growth of single crystal beta-gallium oxide (β-Ga2O3) semiconductor material | |
JP2001080987A (ja) | 化合物半導体結晶の製造装置及びそれを用いた製造方法 | |
JP2018193275A (ja) | 高性能・高品質Fe−Ga基合金単結晶基板及びその製造方法 | |
JP6095060B2 (ja) | Si多結晶インゴットの製造方法 | |
WO2017086449A1 (ja) | SiC単結晶の製造方法及びSiC単結晶インゴット | |
CN117005031A (zh) | 一种在AlN单晶生长过程中抑制籽晶上生长纳米线的方法 | |
JP2004161559A (ja) | 化合物半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060823 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080407 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080701 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080807 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080909 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080922 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111010 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4196791 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111010 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111010 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121010 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121010 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131010 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |