JP4184586B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4184586B2
JP4184586B2 JP2000297443A JP2000297443A JP4184586B2 JP 4184586 B2 JP4184586 B2 JP 4184586B2 JP 2000297443 A JP2000297443 A JP 2000297443A JP 2000297443 A JP2000297443 A JP 2000297443A JP 4184586 B2 JP4184586 B2 JP 4184586B2
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JP
Japan
Prior art keywords
data
circuit
memory cell
page
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000297443A
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English (en)
Japanese (ja)
Other versions
JP2002109893A5 (enrdf_load_stackoverflow
JP2002109893A (ja
Inventor
昇 柴田
智晴 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000297443A priority Critical patent/JP4184586B2/ja
Priority to TW090122891A priority patent/TW543200B/zh
Priority to CNB2004100421793A priority patent/CN100431045C/zh
Priority to CN2007101802300A priority patent/CN101154459B/zh
Priority to KR10-2001-0058271A priority patent/KR100458411B1/ko
Priority to CN200710180232XA priority patent/CN101154465B/zh
Priority to CNB011372443A priority patent/CN1178228C/zh
Priority to CN2007101802315A priority patent/CN101154461B/zh
Priority to US09/957,019 priority patent/US6600676B2/en
Publication of JP2002109893A publication Critical patent/JP2002109893A/ja
Priority to US10/442,995 priority patent/US6937512B2/en
Priority to US11/194,716 priority patent/US7106627B2/en
Publication of JP2002109893A5 publication Critical patent/JP2002109893A5/ja
Priority to US11/530,340 priority patent/US7295469B2/en
Priority to US11/772,271 priority patent/US7613046B2/en
Application granted granted Critical
Publication of JP4184586B2 publication Critical patent/JP4184586B2/ja
Priority to US12/576,638 priority patent/US7894259B2/en
Priority to US13/012,030 priority patent/US8189389B2/en
Priority to US13/471,143 priority patent/US8885408B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2000297443A 2000-09-28 2000-09-28 半導体記憶装置 Expired - Lifetime JP4184586B2 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2000297443A JP4184586B2 (ja) 2000-09-28 2000-09-28 半導体記憶装置
TW090122891A TW543200B (en) 2000-09-28 2001-09-14 Nonvolatile semiconductor memory device
CN2007101802300A CN101154459B (zh) 2000-09-28 2001-09-20 半导体存储装置
KR10-2001-0058271A KR100458411B1 (ko) 2000-09-28 2001-09-20 불휘발성 반도체 기억 장치
CN200710180232XA CN101154465B (zh) 2000-09-28 2001-09-20 半导体存储装置
CNB011372443A CN1178228C (zh) 2000-09-28 2001-09-20 非易失半导体存储装置
CN2007101802315A CN101154461B (zh) 2000-09-28 2001-09-20 半导体存储装置
CNB2004100421793A CN100431045C (zh) 2000-09-28 2001-09-20 非易失半导体存储装置
US09/957,019 US6600676B2 (en) 2000-09-28 2001-09-21 Nonvolatile semiconductor memory device with a ROM block settable in the write or erase inhibit mode
US10/442,995 US6937512B2 (en) 2000-09-28 2003-05-22 Nonvolatile semiconductor memory device with a ROM block settable in the write or erase inhibit mode
US11/194,716 US7106627B2 (en) 2000-09-28 2005-08-02 Nonvolatile semiconductor memory device with redundancy and security information circuitry
US11/530,340 US7295469B2 (en) 2000-09-28 2006-09-08 Nonvolatile semiconductor memory device with a ROM block settable in a write/erase inhibit mode
US11/772,271 US7613046B2 (en) 2000-09-28 2007-07-02 Nonvolatile semiconductor memory device carrying out simultaneous programming of memory cells
US12/576,638 US7894259B2 (en) 2000-09-28 2009-10-09 Nonvolatile semiconductor memory device with first and second write sequences controlled by a command or an address
US13/012,030 US8189389B2 (en) 2000-09-28 2011-01-24 Nonvolatile semiconductor memory device with a voltage setting circuit for a step-up shift test
US13/471,143 US8885408B2 (en) 2000-09-28 2012-05-14 Nonvolatile semiconductor memory device for rendering the same in a busy state after inputting data therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000297443A JP4184586B2 (ja) 2000-09-28 2000-09-28 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007274261A Division JP4703624B2 (ja) 2007-10-22 2007-10-22 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002109893A JP2002109893A (ja) 2002-04-12
JP2002109893A5 JP2002109893A5 (enrdf_load_stackoverflow) 2006-06-08
JP4184586B2 true JP4184586B2 (ja) 2008-11-19

Family

ID=18779560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000297443A Expired - Lifetime JP4184586B2 (ja) 2000-09-28 2000-09-28 半導体記憶装置

Country Status (5)

Country Link
US (8) US6600676B2 (enrdf_load_stackoverflow)
JP (1) JP4184586B2 (enrdf_load_stackoverflow)
KR (1) KR100458411B1 (enrdf_load_stackoverflow)
CN (5) CN101154459B (enrdf_load_stackoverflow)
TW (1) TW543200B (enrdf_load_stackoverflow)

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JP2005108273A (ja) 2003-09-26 2005-04-21 Toshiba Corp 不揮発性半導体記憶装置
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Also Published As

Publication number Publication date
US7613046B2 (en) 2009-11-03
KR20020025711A (ko) 2002-04-04
US20070025149A1 (en) 2007-02-01
US7295469B2 (en) 2007-11-13
US7894259B2 (en) 2011-02-22
US20120224422A1 (en) 2012-09-06
US7106627B2 (en) 2006-09-12
US20110116315A1 (en) 2011-05-19
KR100458411B1 (ko) 2004-11-26
CN1346130A (zh) 2002-04-24
CN101154459B (zh) 2012-03-21
US20100027333A1 (en) 2010-02-04
US20020036930A1 (en) 2002-03-28
US8189389B2 (en) 2012-05-29
CN1540668A (zh) 2004-10-27
US6937512B2 (en) 2005-08-30
CN1178228C (zh) 2004-12-01
CN101154459A (zh) 2008-04-02
CN100431045C (zh) 2008-11-05
CN101154461A (zh) 2008-04-02
US20050265092A1 (en) 2005-12-01
TW543200B (en) 2003-07-21
US20070280017A1 (en) 2007-12-06
US20030206438A1 (en) 2003-11-06
US8885408B2 (en) 2014-11-11
CN101154461B (zh) 2011-10-19
CN101154465B (zh) 2011-10-05
US6600676B2 (en) 2003-07-29
CN101154465A (zh) 2008-04-02
JP2002109893A (ja) 2002-04-12

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