JP4129106B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4129106B2
JP4129106B2 JP30530399A JP30530399A JP4129106B2 JP 4129106 B2 JP4129106 B2 JP 4129106B2 JP 30530399 A JP30530399 A JP 30530399A JP 30530399 A JP30530399 A JP 30530399A JP 4129106 B2 JP4129106 B2 JP 4129106B2
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JP
Japan
Prior art keywords
layer
impurity concentration
semiconductor layer
semiconductor substrate
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30530399A
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English (en)
Japanese (ja)
Other versions
JP2001127308A (ja
JP2001127308A5 (enExample
Inventor
和博 森下
克己 佐藤
紀利 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30530399A priority Critical patent/JP4129106B2/ja
Priority to US09/544,290 priority patent/US6614087B1/en
Priority to DE60041030T priority patent/DE60041030D1/de
Priority to EP00113802A priority patent/EP1096576B1/en
Publication of JP2001127308A publication Critical patent/JP2001127308A/ja
Publication of JP2001127308A5 publication Critical patent/JP2001127308A5/ja
Application granted granted Critical
Publication of JP4129106B2 publication Critical patent/JP4129106B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP30530399A 1999-10-27 1999-10-27 半導体装置 Expired - Fee Related JP4129106B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP30530399A JP4129106B2 (ja) 1999-10-27 1999-10-27 半導体装置
US09/544,290 US6614087B1 (en) 1999-10-27 2000-04-06 Semiconductor device
DE60041030T DE60041030D1 (de) 1999-10-27 2000-06-29 Halbleiterbauelement
EP00113802A EP1096576B1 (en) 1999-10-27 2000-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30530399A JP4129106B2 (ja) 1999-10-27 1999-10-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006060754A Division JP2006157057A (ja) 2006-03-07 2006-03-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2001127308A JP2001127308A (ja) 2001-05-11
JP2001127308A5 JP2001127308A5 (enExample) 2005-07-14
JP4129106B2 true JP4129106B2 (ja) 2008-08-06

Family

ID=17943486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30530399A Expired - Fee Related JP4129106B2 (ja) 1999-10-27 1999-10-27 半導体装置

Country Status (4)

Country Link
US (1) US6614087B1 (enExample)
EP (1) EP1096576B1 (enExample)
JP (1) JP4129106B2 (enExample)
DE (1) DE60041030D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272299B2 (ja) * 2005-11-10 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
DE102007028316B3 (de) * 2007-06-20 2008-10-30 Semikron Elektronik Gmbh & Co. Kg Halbleiterbauelement mit Pufferschicht und Verfahren zu dessen Herstellung
CN107768427A (zh) 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
JP2016195271A (ja) * 2016-07-04 2016-11-17 三菱電機株式会社 半導体装置
JP7243956B2 (ja) * 2018-03-23 2023-03-22 新電元工業株式会社 半導体装置、半導体装置の製造方法及び電力変換回路
CN110504167A (zh) * 2018-05-17 2019-11-26 上海先进半导体制造股份有限公司 绝缘栅双极型晶体管及其制造方法
DE102018213633B9 (de) 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
DE102021000610A1 (de) * 2021-02-08 2022-08-11 3-5 Power Electronics GmbH Stapelförmige III-V-Halbleiterdiode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2252652B1 (enExample) 1973-11-28 1977-06-10 Silec Semi Conducteurs
US4101920A (en) 1975-01-29 1978-07-18 Sony Corporation Green light emitting diode
US4038106A (en) 1975-04-30 1977-07-26 Rca Corporation Four-layer trapatt diode and method for making same
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
EP0283788A1 (de) 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement
US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
FR2638892B1 (fr) 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
JP3994443B2 (ja) 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
JPH09252153A (ja) * 1996-01-09 1997-09-22 Japan Energy Corp ガンダイオード
DE19713962C1 (de) * 1997-04-04 1998-07-02 Siemens Ag Leistungsdiode (FCI-Diode)

Also Published As

Publication number Publication date
EP1096576B1 (en) 2008-12-10
DE60041030D1 (de) 2009-01-22
JP2001127308A (ja) 2001-05-11
EP1096576A1 (en) 2001-05-02
US6614087B1 (en) 2003-09-02

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