DE60041030D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE60041030D1
DE60041030D1 DE60041030T DE60041030T DE60041030D1 DE 60041030 D1 DE60041030 D1 DE 60041030D1 DE 60041030 T DE60041030 T DE 60041030T DE 60041030 T DE60041030 T DE 60041030T DE 60041030 D1 DE60041030 D1 DE 60041030D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041030T
Other languages
German (de)
English (en)
Inventor
Kazuhiro Morishita
Katsumi Satoh
Noritoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60041030D1 publication Critical patent/DE60041030D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
DE60041030T 1999-10-27 2000-06-29 Halbleiterbauelement Expired - Lifetime DE60041030D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30530399A JP4129106B2 (ja) 1999-10-27 1999-10-27 半導体装置

Publications (1)

Publication Number Publication Date
DE60041030D1 true DE60041030D1 (de) 2009-01-22

Family

ID=17943486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041030T Expired - Lifetime DE60041030D1 (de) 1999-10-27 2000-06-29 Halbleiterbauelement

Country Status (4)

Country Link
US (1) US6614087B1 (enExample)
EP (1) EP1096576B1 (enExample)
JP (1) JP4129106B2 (enExample)
DE (1) DE60041030D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272299B2 (ja) * 2005-11-10 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
DE102007028316B3 (de) * 2007-06-20 2008-10-30 Semikron Elektronik Gmbh & Co. Kg Halbleiterbauelement mit Pufferschicht und Verfahren zu dessen Herstellung
CN107768427A (zh) 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
JP2016195271A (ja) * 2016-07-04 2016-11-17 三菱電機株式会社 半導体装置
JP7243956B2 (ja) * 2018-03-23 2023-03-22 新電元工業株式会社 半導体装置、半導体装置の製造方法及び電力変換回路
CN110504167A (zh) * 2018-05-17 2019-11-26 上海先进半导体制造股份有限公司 绝缘栅双极型晶体管及其制造方法
DE102018213633B9 (de) 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
DE102021000610A1 (de) * 2021-02-08 2022-08-11 3-5 Power Electronics GmbH Stapelförmige III-V-Halbleiterdiode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2252652B1 (enExample) 1973-11-28 1977-06-10 Silec Semi Conducteurs
US4101920A (en) 1975-01-29 1978-07-18 Sony Corporation Green light emitting diode
US4038106A (en) 1975-04-30 1977-07-26 Rca Corporation Four-layer trapatt diode and method for making same
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
EP0283788A1 (de) 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement
US4980315A (en) 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
FR2638892B1 (fr) 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
JP3994443B2 (ja) 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
JPH09252153A (ja) * 1996-01-09 1997-09-22 Japan Energy Corp ガンダイオード
DE19713962C1 (de) * 1997-04-04 1998-07-02 Siemens Ag Leistungsdiode (FCI-Diode)

Also Published As

Publication number Publication date
EP1096576B1 (en) 2008-12-10
JP4129106B2 (ja) 2008-08-06
JP2001127308A (ja) 2001-05-11
EP1096576A1 (en) 2001-05-02
US6614087B1 (en) 2003-09-02

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