JP4090817B2 - 定電圧発生回路及び半導体記憶装置 - Google Patents

定電圧発生回路及び半導体記憶装置 Download PDF

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Publication number
JP4090817B2
JP4090817B2 JP2002246790A JP2002246790A JP4090817B2 JP 4090817 B2 JP4090817 B2 JP 4090817B2 JP 2002246790 A JP2002246790 A JP 2002246790A JP 2002246790 A JP2002246790 A JP 2002246790A JP 4090817 B2 JP4090817 B2 JP 4090817B2
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Japan
Prior art keywords
mis transistor
current path
transistor
current
constant voltage
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Expired - Fee Related
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JP2002246790A
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Japanese (ja)
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JP2003162897A5 (enExample
JP2003162897A (ja
Inventor
徹 丹沢
明 梅沢
芳徳 高野
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Toshiba Corp
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Toshiba Corp
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  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP2002246790A 2001-09-13 2002-08-27 定電圧発生回路及び半導体記憶装置 Expired - Fee Related JP4090817B2 (ja)

Priority Applications (1)

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JP2002246790A JP4090817B2 (ja) 2001-09-13 2002-08-27 定電圧発生回路及び半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-278460 2001-09-13
JP2001278460 2001-09-13
JP2002246790A JP4090817B2 (ja) 2001-09-13 2002-08-27 定電圧発生回路及び半導体記憶装置

Related Child Applications (1)

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JP2006204991A Division JP2007004969A (ja) 2001-09-13 2006-07-27 半導体記憶装置

Publications (3)

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JP2003162897A JP2003162897A (ja) 2003-06-06
JP2003162897A5 JP2003162897A5 (enExample) 2006-09-14
JP4090817B2 true JP4090817B2 (ja) 2008-05-28

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JP2002246790A Expired - Fee Related JP4090817B2 (ja) 2001-09-13 2002-08-27 定電圧発生回路及び半導体記憶装置

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4060330B2 (ja) 2003-06-06 2008-03-12 スパンション エルエルシー 半導体記憶装置、および半導体記憶装置のビット線選択方法
KR101051794B1 (ko) * 2004-09-08 2011-07-25 매그나칩 반도체 유한회사 멀티 레벨 입/출력 회로, 중간전위 발생 회로 및 전위비교 회로
KR100699848B1 (ko) * 2005-06-21 2007-03-27 삼성전자주식회사 코어 구조가 개선된 상 변화 메모리 장치
KR100718142B1 (ko) * 2005-12-02 2007-05-14 삼성전자주식회사 금속층-절연층-금속층 구조의 스토리지 노드를 구비하는불휘발성 메모리 소자 및 그 동작 방법
JP5077646B2 (ja) * 2007-04-26 2012-11-21 日本電気株式会社 半導体記憶装置、及び、半導体記憶装置の動作方法
JP2009295225A (ja) * 2008-06-04 2009-12-17 Toppan Printing Co Ltd ディレイパルス発生回路、および半導体記憶装置
JP5380948B2 (ja) * 2008-08-12 2014-01-08 凸版印刷株式会社 半導体記憶装置
JP2012203931A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体記憶装置
WO2013128854A1 (ja) * 2012-02-29 2013-09-06 パナソニック株式会社 不揮発性半導体記憶装置
JP2014067476A (ja) * 2012-09-10 2014-04-17 Toshiba Corp 磁気抵抗メモリ装置

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JP2003162897A (ja) 2003-06-06

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