JP4085859B2 - 磁気センサおよびその製造方法 - Google Patents
磁気センサおよびその製造方法 Download PDFInfo
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- JP4085859B2 JP4085859B2 JP2003085249A JP2003085249A JP4085859B2 JP 4085859 B2 JP4085859 B2 JP 4085859B2 JP 2003085249 A JP2003085249 A JP 2003085249A JP 2003085249 A JP2003085249 A JP 2003085249A JP 4085859 B2 JP4085859 B2 JP 4085859B2
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- magnetic sensor
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- magnetic
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005291 magnetic effect Effects 0.000 title claims description 181
- 238000004519 manufacturing process Methods 0.000 title description 39
- 230000000694 effects Effects 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 50
- 230000005415 magnetization Effects 0.000 claims description 38
- 239000010408 film Substances 0.000 description 165
- 239000010410 layer Substances 0.000 description 138
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 75
- 229920002120 photoresistant polymer Polymers 0.000 description 34
- 239000000377 silicon dioxide Substances 0.000 description 33
- 235000012239 silicon dioxide Nutrition 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000000992 sputter etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 229910020598 Co Fe Inorganic materials 0.000 description 10
- 229910002519 Co-Fe Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- BDVUYXNQWZQBBN-UHFFFAOYSA-N [Co].[Zr].[Nb] Chemical compound [Co].[Zr].[Nb] BDVUYXNQWZQBBN-UHFFFAOYSA-N 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003085249A JP4085859B2 (ja) | 2002-03-27 | 2003-03-26 | 磁気センサおよびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002089328 | 2002-03-27 | ||
| JP2003085249A JP4085859B2 (ja) | 2002-03-27 | 2003-03-26 | 磁気センサおよびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007113218A Division JP4896800B2 (ja) | 2002-03-27 | 2007-04-23 | 磁気センサおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006752A JP2004006752A (ja) | 2004-01-08 |
| JP2004006752A5 JP2004006752A5 (enExample) | 2005-06-23 |
| JP4085859B2 true JP4085859B2 (ja) | 2008-05-14 |
Family
ID=30446139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003085249A Expired - Fee Related JP4085859B2 (ja) | 2002-03-27 | 2003-03-26 | 磁気センサおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4085859B2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104459574A (zh) * | 2013-09-12 | 2015-03-25 | 上海矽睿科技有限公司 | 一种磁传感装置的制备工艺 |
| CN104755948A (zh) * | 2012-10-12 | 2015-07-01 | 美新公司 | 单晶三轴磁场传感器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5348080B2 (ja) * | 2002-03-27 | 2013-11-20 | ヤマハ株式会社 | 磁気センサおよびその製造方法 |
| JP4323220B2 (ja) * | 2003-05-28 | 2009-09-02 | 財団法人電気磁気材料研究所 | 薄膜磁気センサ及びその製造方法 |
| EP1498744B1 (en) | 2003-07-18 | 2011-08-10 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
| US7271586B2 (en) | 2003-12-04 | 2007-09-18 | Honeywell International Inc. | Single package design for 3-axis magnetic sensor |
| US7126330B2 (en) * | 2004-06-03 | 2006-10-24 | Honeywell International, Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
| JP5089853B2 (ja) * | 2004-07-16 | 2012-12-05 | ヤマハ株式会社 | 磁気センサの製造方法 |
| JP4760073B2 (ja) * | 2005-03-17 | 2011-08-31 | ヤマハ株式会社 | 磁気センサおよびその製法 |
| US7687284B2 (en) | 2005-01-13 | 2010-03-30 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
| TWI306297B (en) | 2005-02-18 | 2009-02-11 | Yamaha Corp | Lead frame, sensor including lead frame and method of forming sensor including lead frame |
| KR100740358B1 (ko) | 2005-02-25 | 2007-07-16 | 야마하 가부시키가이샤 | 센서 및 센서 형성 방법 |
| JP2006253411A (ja) * | 2005-03-10 | 2006-09-21 | Yamaha Corp | 磁気センサ |
| EP1860451B1 (en) * | 2005-03-17 | 2012-06-27 | Yamaha Corporation | 3-axis magnetic sensor and manufacturing method thereof |
| JP4984408B2 (ja) * | 2005-03-17 | 2012-07-25 | ヤマハ株式会社 | 磁気センサおよびその製法 |
| JP4984412B2 (ja) * | 2005-03-28 | 2012-07-25 | ヤマハ株式会社 | 磁気センサおよび磁気センサの製造方法 |
| JP4961736B2 (ja) * | 2005-12-05 | 2012-06-27 | ヤマハ株式会社 | 磁気センサの製造方法 |
| JP4735305B2 (ja) * | 2006-02-09 | 2011-07-27 | ヤマハ株式会社 | 三軸磁気センサおよびその製造方法 |
| JP4984424B2 (ja) * | 2005-04-28 | 2012-07-25 | ヤマハ株式会社 | 磁気センサおよびその製造方法 |
| WO2006098367A1 (ja) | 2005-03-17 | 2006-09-21 | Yamaha Corporation | 磁気センサ及びその製造方法 |
| JP4940565B2 (ja) * | 2005-03-28 | 2012-05-30 | ヤマハ株式会社 | 磁気センサの製造方法 |
| JP4972871B2 (ja) * | 2005-03-30 | 2012-07-11 | ヤマハ株式会社 | 磁気センサおよびその製造方法 |
| JP4734987B2 (ja) * | 2005-03-25 | 2011-07-27 | ヤマハ株式会社 | 磁気センサの製造方法 |
| JP4735304B2 (ja) * | 2006-02-09 | 2011-07-27 | ヤマハ株式会社 | 三軸磁気センサおよびその製造方法 |
| JP5298404B2 (ja) * | 2005-03-28 | 2013-09-25 | ヤマハ株式会社 | 三軸磁気センサおよびその製造方法 |
| CN100593122C (zh) * | 2005-12-09 | 2010-03-03 | 中国科学院物理研究所 | 一种平面集成的三维磁场传感器及其制备方法和用途 |
| JP4833691B2 (ja) * | 2006-03-03 | 2011-12-07 | 株式会社リコー | 磁気センサ及びその製造方法 |
| EP1830407B1 (en) * | 2006-03-03 | 2010-12-01 | Ricoh Company, Ltd. | Magnetoresistance effect element and manufacturing method thereof |
| JP4790448B2 (ja) * | 2006-03-03 | 2011-10-12 | 株式会社リコー | 磁気抵抗効果素子及びその形成方法 |
| JP2008270471A (ja) | 2007-04-19 | 2008-11-06 | Yamaha Corp | 磁気センサ及びその製造方法 |
| US7635974B2 (en) * | 2007-05-02 | 2009-12-22 | Magic Technologies, Inc. | Magnetic tunnel junction (MTJ) based magnetic field angle sensor |
| JP2008309567A (ja) * | 2007-06-13 | 2008-12-25 | Yamaha Corp | 磁気センサ及びその製造方法 |
| JP5157611B2 (ja) | 2007-06-13 | 2013-03-06 | 株式会社リコー | 磁気センサ及びその製造方法 |
| JP5292726B2 (ja) * | 2007-06-13 | 2013-09-18 | ヤマハ株式会社 | 磁気センサ及びその製造方法 |
| JP2008309633A (ja) * | 2007-06-14 | 2008-12-25 | Yamaha Corp | 磁気センサ |
| JP2008309634A (ja) * | 2007-06-14 | 2008-12-25 | Yamaha Corp | 磁気センサ |
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-
2003
- 2003-03-26 JP JP2003085249A patent/JP4085859B2/ja not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104755948A (zh) * | 2012-10-12 | 2015-07-01 | 美新公司 | 单晶三轴磁场传感器 |
| CN104755948B (zh) * | 2012-10-12 | 2018-04-10 | 美新公司 | 单晶三轴磁场传感器 |
| CN104459574A (zh) * | 2013-09-12 | 2015-03-25 | 上海矽睿科技有限公司 | 一种磁传感装置的制备工艺 |
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| Publication number | Publication date |
|---|---|
| JP2004006752A (ja) | 2004-01-08 |
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