JP4061019B2 - 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス - Google Patents

導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス Download PDF

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Publication number
JP4061019B2
JP4061019B2 JP2000515300A JP2000515300A JP4061019B2 JP 4061019 B2 JP4061019 B2 JP 4061019B2 JP 2000515300 A JP2000515300 A JP 2000515300A JP 2000515300 A JP2000515300 A JP 2000515300A JP 4061019 B2 JP4061019 B2 JP 4061019B2
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silicon carbide
carbide substrate
gallium nitride
group iii
buffer layer
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Japanese (ja)
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JP2001519603A5 (enExample
JP2001519603A (ja
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エドモンド，ジョン・アダム
コング，フア−シュアン
ドーヴァースパイク，キャスリーン・マリー
レオナード，マイケル・ターナー
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
JP2000515300A 1997-10-07 1998-10-06 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス Expired - Lifetime JP4061019B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/944,547 US6201262B1 (en) 1997-10-07 1997-10-07 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US08/944,547 1997-10-07
PCT/US1998/021160 WO1999018617A1 (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Related Child Applications (1)

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JP2006349833A Division JP4966645B2 (ja) 1997-10-07 2006-12-26 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス

Publications (3)

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JP2001519603A JP2001519603A (ja) 2001-10-23
JP2001519603A5 JP2001519603A5 (enExample) 2005-05-26
JP4061019B2 true JP4061019B2 (ja) 2008-03-12

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JP2000515300A Expired - Lifetime JP4061019B2 (ja) 1997-10-07 1998-10-06 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス
JP2006349833A Expired - Lifetime JP4966645B2 (ja) 1997-10-07 2006-12-26 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス

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JP2006349833A Expired - Lifetime JP4966645B2 (ja) 1997-10-07 2006-12-26 導電性緩衝中間層構造を有する炭化ケイ素基質上の第ｉｉｉ族窒化物フォトニックデバイス

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Country Link
US (5) US6201262B1 (enExample)
EP (1) EP1027736A1 (enExample)
JP (2) JP4061019B2 (enExample)
KR (1) KR100592897B1 (enExample)
CN (1) CN1185719C (enExample)
AU (1) AU9689098A (enExample)
CA (1) CA2305203C (enExample)
WO (1) WO1999018617A1 (enExample)

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US6630690B2 (en) 2003-10-07
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