KR100592897B1 - 도전성 버퍼 층간 구조를 갖는 실리콘 카바이드 기판 상의3족 질화물 광학 소자 - Google Patents

도전성 버퍼 층간 구조를 갖는 실리콘 카바이드 기판 상의3족 질화물 광학 소자 Download PDF

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KR100592897B1
KR100592897B1 KR1020007003789A KR20007003789A KR100592897B1 KR 100592897 B1 KR100592897 B1 KR 100592897B1 KR 1020007003789 A KR1020007003789 A KR 1020007003789A KR 20007003789 A KR20007003789 A KR 20007003789A KR 100592897 B1 KR100592897 B1 KR 100592897B1
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silicon carbide
gallium nitride
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carbide substrate
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KR20010031003A (ko
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에드몬드존아담
콩휴아-슈앙
도버스파크캐서린마리
레오나드미셸터너
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
KR1020007003789A 1997-10-07 1998-10-06 도전성 버퍼 층간 구조를 갖는 실리콘 카바이드 기판 상의3족 질화물 광학 소자 Expired - Lifetime KR100592897B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/944,547 US6201262B1 (en) 1997-10-07 1997-10-07 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US08/944,547 1997-10-07
US8/944,547 1997-10-07
PCT/US1998/021160 WO1999018617A1 (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Publications (2)

Publication Number Publication Date
KR20010031003A KR20010031003A (ko) 2001-04-16
KR100592897B1 true KR100592897B1 (ko) 2006-06-23

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KR1020007003789A Expired - Lifetime KR100592897B1 (ko) 1997-10-07 1998-10-06 도전성 버퍼 층간 구조를 갖는 실리콘 카바이드 기판 상의3족 질화물 광학 소자

Country Status (8)

Country Link
US (5) US6201262B1 (enExample)
EP (1) EP1027736A1 (enExample)
JP (2) JP4061019B2 (enExample)
KR (1) KR100592897B1 (enExample)
CN (1) CN1185719C (enExample)
AU (1) AU9689098A (enExample)
CA (1) CA2305203C (enExample)
WO (1) WO1999018617A1 (enExample)

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US6187606B1 (en) 2001-02-13
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