CN1185719C - 碳化硅衬底上具有导电缓冲中间层结构的ⅲ族氮化物光子器件 - Google Patents

碳化硅衬底上具有导电缓冲中间层结构的ⅲ族氮化物光子器件 Download PDF

Info

Publication number
CN1185719C
CN1185719C CNB988110652A CN98811065A CN1185719C CN 1185719 C CN1185719 C CN 1185719C CN B988110652 A CNB988110652 A CN B988110652A CN 98811065 A CN98811065 A CN 98811065A CN 1185719 C CN1185719 C CN 1185719C
Authority
CN
China
Prior art keywords
silicon carbide
carbide substrates
gallium nitride
opto
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB988110652A
Other languages
English (en)
Other versions
CN1278949A (zh
Inventor
J·A·艾德蒙得
孔华双
K·M·多弗斯派克
M·T·莱昂纳德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Publication of CN1278949A publication Critical patent/CN1278949A/zh
Application granted granted Critical
Publication of CN1185719C publication Critical patent/CN1185719C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H01L33/007—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)

Abstract

这里公开了一种具有III族氮化物有源层的光电子器件，该器件包括：碳化硅衬底；具有III族氮化物有源层的光电子二极管；选自由氮化镓和铟镓氮构成的组中的缓冲结构，该结构位于所说碳化硅衬底和所说光电子二极管间；及应力吸收结构，包括在所说缓冲结构的晶体结构内的多个预定应力释放区，以便所说缓冲结构中产生的应力诱发开裂，发生在所说缓冲层内的预定区域，而非其它区域。

Description

碳化硅衬底上具有导电缓冲中间层结构的III族氮化物光子器件
技术领域
本发明涉及宽带隙材料的光子器件，特别涉及在碳化硅衬底上形成有III族氮化物有源层的光子器件。
背景技术
近些年来人们对例如金刚石、碳化硅和氮化镓等宽带隙半导体材料越来越感兴趣，是由于它们的宽带隙特性使得它们能够发射比例如硅或砷化镓等其它半导体材料更高能量的光(对应于更高频率和更短波长)。具体说，碳化硅、氮化镓和某些其它III族氮化物具有足以产生包括较高能量的蓝光部分的整个可见光谱的可见光。所以它们为半导体激光器及蓝和绿发射的发光二极管(LEDs)的发展提供了基础。
这些材料中，由于氮化镓是直接半导体，即，从价带到导带的跃迁不需要电子晶体动量改变，所以人们对氮化镓特别感兴趣。结果，这种跃迁可以非常有效地发光。相反，碳化硅是间接半导体，带间跃迁能部分作为光子部分作为振动能损失掉。所以，氮化镓的优点是，对于给定工作电压和电流来说，它可以比碳化硅更有效地发光。
然而，对于其它半导体材料来说，形成能工作的光子器件的第一步是建立或获得具有希望有源层的合适晶体结构。然而，由于半导体材料结构特性特别是它们的晶格结构上的差异，某种程度上限制了工作上能支持III族氮化物有源层器件的材料。
目前，市场上可买得到的发光二极管光子器件的结构由蓝宝石衬底上的氮化镓或有关的III族氮化物有源层构成。蓝宝石(Al2O3)具有与III族氮化物较匹配的晶格，但仍存在一些缺点，其中最严重的是电绝缘性。所以，在III族氮化物有源层和缓冲层(即提供从衬底到有源层的晶体结构过渡的中间层)建立在蓝宝石上时，蓝宝石不能用作到器件有源部分的导电通道。这限制了能够在蓝宝石上设计和制造的器件种类，特别是限制了形成“纵向”器件的能力，所谓的“纵向”器件是指，器件接触可以设置于器件的相对表面上，具有通过衬底、缓冲层和有源层及器件相对表面上的另一接触的直接导电路径。
因此，人们包括本发明的受让人的兴趣集中在使用其它材料作III族氮化物光子器件的衬底候选材料。碳化硅(SiC)是特别引人注目的候选材料，原因是它能够制成导电的，具有可以相对于III族氮化物有源层适当地被缓冲的晶格匹配，且具有优异的热和机械稳定性。
虽然如此，但碳化硅的晶格结构使得碳化硅衬底上合适III族缓冲层的某些最佳候选材料是绝缘的而非导电的。所以，尽管碳化硅衬底可以制成导电的，但碳化硅衬底和III族有源层光子器件间的某些优选缓冲层仍是绝缘的，抵消了导电碳化硅衬底的优点。
例如，氮化铝(AlN)在碳化硅衬底和III族有源层特别是氮化镓有源层间具有优异的缓冲作用。然而，氮化铝是绝缘的而非导电的。所以具有氮化铝缓冲层的结构需要短路接触使氮化铝缓冲层旁路，以便电连接导电碳化硅衬底与III族氮化物有源层。如上所述，这种短路接触的作法妨碍了某些更有益的器件设计。
或者，例如氮化镓(GaN)、铝镓氮(AlGaN)或氮化镓与铝镓氮的复合材料等导电缓冲层材料可以消除这种短路接触。进而，消除这种短路接触可以减小外延层厚度，减少制造器件所需要的制造步骤，减小总芯片尺寸，并提高器件效率。因此，可以低成本制造较高性能的III族氮化物器件。
然而，尽管这些导电缓冲材料具备这些优点，但与氮化铝相比，它们与碳化硅的晶格匹配仍不能令人满意。因此，在碳化硅衬底上生长氮化镓、铝镓氮或它们的复合材料外延缓冲层时，它们易在例如发光二极管或激光二极管等光子器件需要的随后外延层中产生过多龟裂。
已经公开了一些包括氮化镓和碳化硅衬底的器件。例如JP-A-6 326416中讨论了使用碳化硅衬底、氮化镓缓冲层和未掺杂的镓铝铟氮有源层的化合物半导体元件。然而，这种器件不能充分利用氮化镓有利的电子特性，并且氮化镓缓冲层会发生开裂。类似地，WO 96/24167公开了一种发光半导体激光器，它包括通过可能包含氮化镓的多层缓冲结构与碳化硅衬底分隔的氮化镓有源层。
对开裂问题研究者已提出了各种解决方案。例如WO 90/10950公开了一种方法，用于通过在原始衬底生长第二衬底，从而在失配衬底上生长单晶固体器件。该第二衬底是通过在原始衬底上生长分隔成小台面的外延层并退火得到的。然而，该方法主要是使开裂发生在非关键区域而非减少或消除裂纹。
EP-A-0352472公开了异质外延晶格失配的半导体材料的工艺。在EP-A-0352472中，在硅衬底上放置一突出的格栅。然后在暴露的硅和该突出格栅上均淀积晶格失配的半导体材料例如GaAs。该方法也主要是使开裂发生于非关键区域而非减少或消除裂纹。
所以，需要一种具备氮化铝的晶格匹配，同时具备氮化镓或铝镓氮的导电性，并可以与导电碳化硅衬底而非绝缘蓝宝石衬底一起使用的缓冲结构。
发明内容
因此，本发明的目的是制造光子器件及其晶片前身，该器件具有III族氮化物有源层、导电碳化硅衬底和导电缓冲层，但可以避免龟裂及到目前为止妨碍这些材料和层的组合的其它问题。
本发明用带有III族氮化物有源层的光子器件达到该目的，所说光子器件包括碳化硅衬底、具有III族氮化物有源层的光电子二极管、碳化硅衬底和光电子二极管之间的缓冲结构，其中缓冲结构是导电的，并能提供合适的结晶特性。
一方面，该缓冲结构选自由氮化镓和铟镓氮(InGaN)组成的组中，并在缓冲层的晶体结构中引入包括多个预定应力释放区的应力吸收结构，以便缓冲层中产生的应力引起的龟裂发生在预定区域中，而不发生在缓冲层内其它区域。
另一方面，该缓冲层包括碳化硅衬底表面上的选自由氮化镓和铟镓氮组成的组中的多个独立晶体部分，以使碳化硅和铝镓氮缓冲结构间的异质势垒最小或被消除。
在本发明的一个技术方案中，提供一种用于III族氮化物器件的晶片前身，包括：
碳化硅衬底晶片；
所说碳化硅衬底上的铝镓氮缓冲层；及
所说的碳化硅衬底表面上的多个独立晶体部分，这些晶体部分选自氮化镓和铟镓氮，其中所说独立晶体部分存在的量为40至60个每平方微米并且直径为0.01至0.1微米。
在本发明的又一个技术方案中，提供由上述晶片前身形成的光电子器件，包括具有位于铝镓氮缓冲层上的III族氮化物有源层的光电子二极管。在其一个更具体技术方案中，上述光电子器件是发光二级管。此外本发明还提供包括上述发光二极管的像素以及包括多个上述像素的显示器。
本发明再一技术方案中，提供一种在碳化硅衬底上形成III族氮化物光电子器件的方法，包括：
在碳化硅衬底的表面上形成多个独立晶体部分，这些晶体部分选自氮化镓和铟镓氮，并且其量为40至60个每平方微米直径为0.01至0.1微米；
在具有独立晶体部分的碳化硅衬底的表面上，形成铝镓氮缓冲层；及
在缓冲层上，形成具有III族氮化物有源层的光电子器件。
结合附图所作的详细介绍，可以使本发明的上述及其它目的和优点及其实施方式更清楚。
附图说明
图1是具有短路环接触的现有技术二极管的剖面图；
图2是可以根据本发明制造的纵向二极管的剖面图；
图3是根据本发明形成的像素的放大示意图；
图4是包括多个引入了根据本发明的结构的多个像素的显示器的示意图；
图5是引入了根据本发明的应力释放结构的碳化硅晶片的示意图；
图6是图5所示晶片的剖面图；
图7是图5所示晶片的剖面图，示意性展示了其上生长的缓冲层；
图8是引入本发明第二实施例的晶片的剖面图；
图9是与图8相同的剖面图，展示了其上生长的附加晶体；
图10是没在本发明范围内的外延层的扫描电子显微镜的10倍放大照片；
图11是展示根据本发明的外延层的10倍SEM照片；
图12是展示根据本发明的外延层的另一10倍SEM照片；
图13是与图12类似的外延层的50倍SEM照片。
图14是根据本发明的外延层的100倍SEM照片；
图15是展示未在本发明范围内的另一外延层的另一100倍SEM照片；
图16是本发明第二实施例的15000倍SEM照片；
图17是第二实施例的50000倍SEM照片。
具体实施方式
图1是以20表示的现有技术器件的剖面图。如图1所示，器件20包括碳化硅衬底21、衬底21“背”面上的接触22、III族氮化物有源层23、绝缘而非导电的缓冲层24、用于提供导电硅缓冲层21和有源层23间的电接触的短路接触25、完成电路并允许工作时电流流过器件的上接触26。
图2展示了本发明提供更小型器件的方式。图2中，器件总体表示为30，包括导电碳化硅衬底31、背接触32、有源层33、导电缓冲结构34及上接触35。本发明去除了图1器件中的短路接触(一般为短路环接触)25。结果，器件30更容易制造，且工作起来更有效。应理解，这里讨论的有源层33可以表示具有一个p-n结、一个或两个p-n异质结或p-n结量子阱结构的器件。现有的美国专利包括5393993和5592501中介绍了这些结构，所以除了更进一步骤展示本发明外，这里不再对其详细讨论。
图3展示了根据本发明的器件30可以与不同发光波长具体为红光发射二极管36和绿光发射二极管37等的类似器件结合，作为总体表示为40的三色像素的一部分，所说像素可以是显示器41中多个这种像素中的一个。图4中示意性展示的纵线42和横线43表示一般用于引入发光二极管的显示器的像素的行和列。
第一方面，本发明是一种具有III族氮化物有源层的光子器件，它包括碳化硅衬底31、带有III族氮化物有源层33的光二极管、位于碳化硅衬底31和二极管33间选自由氮化镓和铟镓氮组成的组中的缓冲结构34。具体说，该缓冲结构包括缓冲结构34的晶体结构中由多个预定应力释放区域构成的应力吸收结构，以便缓冲结构中产生的应力引起的龟裂，在预定区域而不在结构中其它地方发生。
图5是引入多个器件前身并引入本发明的应力吸收结构的晶片的示意图。图5展示了总体表示为44其上叠置了沟槽45的格栅图形的晶片。图6展示了同一晶片44和剖面取向的沟槽45。在具有沟槽45的晶片44上生长下一外延层46(图7)时，外延层46的表面趋于具有一连串断开47，这些断开47的位置反映了构成晶片44中的图形的沟槽45的位置。在碳化硅晶片44上生长缓冲层46的晶格结构时，这些断开47构成应力在此释放的区域。结果，在预计的地方而非任意位置发生晶格失配(或其它因素)造成的这种应力，所以允许器件形成在其余区域内，没有应力造成的龟裂的严重危险。
如上所述及图5所展示的，在一个优选实施例中，应力释放区的预定图形包括一格栅，该格栅较好是按限定分立器件的任何希望或必需的尺寸形成。例如，在分立器件是发光二极管时，优选的格栅图形限定每侧约为250微米的方形。或者，对于例如激光二极管等不同器件来说，该格栅可以限定约250×500微米的矩形。
图10是以10倍放大的SEM照片(10倍于实际尺寸)，展示了看起来象三角形或多边形图形的龟裂可能损害外延层，使之有缺陷或无法用于光子器件的程度。
图11是另一10倍SEM照片，展示了外延层中的沟槽格栅图形。与图10相比，图11所示表面基本上没有龟裂缺陷。
图12是又一10倍SEM照片，展示了类似的格栅图形，与图11一样，根本没有图10所示的龟裂。
图13是具体展示本发明的优点的50倍SEM照片。图13中，一个格栅区包括一个大缺陷(大致“X”形)。然而，缺陷终止于格栅线处，并只损害一个器件(或器件前身)，而不会损害晶片的多个器件部分。
图14是100倍SEM照片，类似地展示了一个缺陷格栅部分(在照片的右下部分)，缺陷在格栅线处终止，而不会进一步延伸到整个表面。
图15是100倍SEM照片，再一次展示了没引入本发明任何一个实施例的表面。图10所示一样，缺陷的几何图形十分明显。
在另一实施例中，应力吸收结构可以包括图8和9中得以很好展示的预定图形的小台面结构。在图8和9中，碳化硅衬底表示为50，小台面结构为51。台面结构51由不利于所选缓冲材料生长于其上的材料构成。关于氮化镓或铟镓氮缓冲结构，优选的材料选自由二氧化硅、氮化硅、和氧化铝构成的组中。
图9示出了与图8相同的结构，但缓冲材料作为外延层生长于碳化硅衬底50上。外延层部分由52表示。如图9所示，由于台面51上不利于生长缓冲材料，所以外延层52形成仍表现为其间为预定应力释放不连续结构的图形。如同先前的实施例，可以使两台面间的区域与各器件具有大致相同尺寸，如上所述，对于LEDs来说约为250微米，对于激光二极管来说约为250×500微米。然而，应理解，格栅或台面结构图形的特定尺寸是例示性的，而非对本发明的限制。
应理解，尽管根据本发明的晶片结构特别有益于光电子器件，但并不限于此，该优异的结构特性也有益于形成于晶片上的其它器件。
如背景部分所述，一般如图1中的23和图2中的33所示，形成于缓冲层上的光电子器件一般不是单层，而是选自由p-n同质结、p-n异质结、p-n单和双异质结、及p-n结量子阱结构构成的组中的多层二极管。
在优选实施例中，碳化硅衬底具有选自3C、4H、6H和15R多型构成的组中的多型。在最优选的实施例中，二极管的III族氮化物有源层包括氮化镓或铟镓氮。
图16-17展示了本发明的另一实施例。一般说，图2再次示意性展示了该整体结构，包括碳化硅衬底31、光子二极管33和缓冲层34。然而，该例中，缓冲层是铝镓氮，而不是氮化镓或铟镓氮。该实施例包括图16-17中的白点表示的多个独立晶体部分。独立晶体部分选自由氮化镓和铟镓氮构成的组中，并形成于碳化硅衬底表面上，用于使碳化硅衬底31和铝镓氮缓冲结构34间的异质势垒最小或被消除。
在优选实施例中，独立晶体部分的量应足以使异质势垒最小或被消除，但小于有害地影响或破坏形成于碳化硅衬底31上的任何所得二极管器件的功能的量。如图16-17的照片所示，独立晶体部分的量应为每平方微米约40-60。
此外，独立晶体部分的尺寸较好是大到足以使异质势垒最小或被消除，但小于有害地影响或破坏形成于碳化硅衬底31上的任何所得二极管器件的功能的尺寸。在优选实施例中，独立晶体部分的直径为约0.01-0.1微米。
与先前实施例一样，形成于缓冲结构上的光电子器件33可以包括发光二极管或激光二极管，所得发光二极管可以引入像素中，像素进而可以引入显示器中。
在优选实施例中，铝镓氮缓冲层的铝原子比为约10-15％。
另一方面，本发明包括在带有导电缓冲结构的碳化硅衬底上制造III族氮化物光电子器件的方法。根据其方法的方案，本发明包括：在碳化硅衬底的上表面上，形成为在其上生长晶体而另外制备的结构图形；在碳化硅衬底的已构图表面上，形成选自由氮化镓和铟镓氮构成的组中的缓冲层，使缓冲层呈现仿照碳化硅衬底表面中开口图形的特征的结构；然后，在缓冲层上形成具有III族氮化物有源层的光电子器件。
如关于结构方面所介绍的，形成结构图形的步骤可以包括在碳化硅衬底表面中形成开口图形，或在碳化硅衬底表面上形成台面结构图形。
在图形由开口构成时，形成开口的步骤可以包括例如反应离子腐蚀或掩蔽和腐蚀步骤等技术。对于碳化硅来说，这些步骤中的每一步都较容易理解，所以不再介绍，但注意，例如美国专利4865685和4981551例示性介绍了碳化硅的干法腐蚀程序。
在引入台面结构时，它们较好是选自由二氧化硅、氮化硅和氧化铝构成的组中。与结构情况一样，具有III族有源层的光电子器件较好由氮化镓或铟镓氮构成。
与结构实施例一样，本发明方法可以包括形成发光二极管或激光二极管，在形成发光二极管时，该方法还可以包括将LED引入像素，而像素引入显示器。
根据替代的方法方案，在碳化硅衬底上，由铝镓氮形成本发明结构的缓冲结构，所说碳化硅衬底已通过在碳化硅表面上，形成选自由氮化镓和铟镓氮构成的组中的多个独立晶体部分，预先制备好。此后，在缓冲层上形成具有III族有源层的光电子器件。
如本发明的结构方案所述，该方法包括其尺寸和量足以使异质势垒最小或被消除，但低于有害地影响或破坏在碳化硅衬底上形成的任何所得二极管器件的功能的独立晶体部分。具体说，本发明提供一种坚固结构，该结构一般能够耐受预计量级的静电放电。
根据第二方法方案，所得器件可形成为发光二极管，所以该方法还可以包括将LED引入像素，并将像素引入显示器的步骤。或者，该方法可以包括形成激光二极管而不LED的步骤。
与本发明的其它方案一样，在使用铝镓氮缓冲层时，较好是其铝原子比约为10-15％。
例子
按制造导电缓冲发光二极管和激光二极管的目前方法，首先淀积GaN点。GaN点的作用是降低SiC衬底和Si掺杂的AlGaN缓冲层间的势垒。这可以在比结构中其它外延层所用温度低很多的温度下进行。点的尺寸和密度如图16和17所示。重要的是保持点较小，以便静电放电不产生负面影响。GaN点淀积约6秒，然后，用约15秒时间，用Si掺杂的Al0.10Ga0.90N“帽盖”。该帽盖的作用是防止GaN点因加热而发生分解。在该材料系中，在GaN中任意添加多少Al，即Al(1-x)Ga(x)N，都可以减小材料的分解速率，是由于在NH3/H2气氛中，AlGaN比GaN更稳定的缘故。点的帽盖后，将温度升高到缓冲层温度。温度升高后，且在进行缓冲层生长前，让温度稳定约2分钟。
在特定操作期间，在NH3和H2分别为13SLM和15SLM的气氛中，加热SiC晶片。在整个GaN点、AlGaN帽盖层和随后的缓冲层生长期间，这些流量保持恒定。在10分钟内温度升高直到达到约960℃的GaN点温度。使系统中的温度稳定约5分钟后，使10-15cc的三甲基镓(TMG；-5℃，600乇)流过，时间约为6秒，进行点淀积。为以确保点是导电的，随着TMG流加入SiH4。SiH4的量通过生长载流子密度约为1×1018cm-3的体GaN层确定。GaN点淀积后，TMG和SiH4继续流过，但现在加入三甲基铝(TMA，92cc，25℃，600乇)，于是形成约10-11％AlGaN的“帽盖”。帽盖的生长时间为15秒。然后，终止气流(TMG，TMA和SiH4)，将温度升高到一般约为1060℃的缓冲层温度。温度升高1分钟，然后是2分钟使温度稳定的时间周期。然后，生长缓冲层。一般条件是18ccTMG/110cc TMA/0.087ccSiH4。缓冲层由约11-12％的AlGaN构成，一般厚约为1600-2700埃。
在附图和说明书中，已公开了本发明典型实施例，尽管使用了特定的术语，但它们只是一般性描述性使用，目的不在于限制，本发明的范围记载于以下的权利要求书中。

Claims (10)

1.一种用于III族氮化物器件的晶片前身，包括：
碳化硅衬底晶片；
所说碳化硅衬底上的铝镓氮缓冲层；及
所说的碳化硅衬底表面上的多个独立晶体部分，这些晶体部分选自氮化镓和铟镓氮，其中所说独立晶体部分存在的量为40至60个每平方微米并且直径为0.01至0.1微米。
2.根据权利要求1的晶片前身，其中所说铝镓氮缓冲层的铝原子比为10-15％。
3.由权利要求1的晶片前身形成的光电子器件，包括具有位于铝镓氮缓冲层上的III族氮化物有源层的光电子二极管。
4.根据权利要求3的光电子器件，其中所说二极管选自由p-n同质结、p-n单和双异质结、及p-n结量子阱结构构成的组中，并且所说碳化硅衬底具有选自以下多型3C、4H、6H和15R中的一种多型。
5.根据权利要求3的光电子器件，其中所说III族氮化物有源层选自氮化镓和铟镓氮。
6.根据权利要求3的光电子器件，其中所述器件是发光二极管。
7.根据权利要求3的光电子器件，其中所述器件是激光二极管。
8.一种包括如权利要求6所述的光电子器件的像素。
9.一种引入多个如权利要求8所述的像素的显示器。
10.一种在碳化硅衬底上形成III族氮化物光电子器件的方法，包括：
在碳化硅衬底的表面上形成多个独立晶体部分，这些晶体部分选自氮化镓和铟镓氮，并且其量为40至60个每平方微米直径为0.01至0.1微米；
在具有独立晶体部分的碳化硅衬底的表面上，形成铝镓氮缓冲层；及
在缓冲层上，形成具有III族氮化物有源层的光电子器件。
CNB988110652A 1997-10-07 1998-10-06 碳化硅衬底上具有导电缓冲中间层结构的ⅲ族氮化物光子器件 Expired - Lifetime CN1185719C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/944,547 US6201262B1 (en) 1997-10-07 1997-10-07 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US08/944,547 1997-10-07

Publications (2)

Publication Number Publication Date
CN1278949A CN1278949A (zh) 2001-01-03
CN1185719C true CN1185719C (zh) 2005-01-19

Family

ID=25481617

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988110652A Expired - Lifetime CN1185719C (zh) 1997-10-07 1998-10-06 碳化硅衬底上具有导电缓冲中间层结构的ⅲ族氮化物光子器件

Country Status (8)

Country Link
US (5) US6201262B1 (zh)
EP (1) EP1027736A1 (zh)
JP (2) JP4061019B2 (zh)
KR (1) KR100592897B1 (zh)
CN (1) CN1185719C (zh)
AU (1) AU9689098A (zh)
CA (1) CA2305203C (zh)
WO (1) WO1999018617A1 (zh)

Families Citing this family (328)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403708B2 (en) 1996-05-27 2002-06-11 Mitsui Chemicals Inc Crystalline polypropylenes, process for preparing thereof, polypropylene compositions, and thermoformed products
JP3060973B2 (ja) * 1996-12-24 2000-07-10 日本電気株式会社 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3283802B2 (ja) * 1997-09-29 2002-05-20 日本電気株式会社 選択成長法を用いた半導体層及びその成長方法、選択成長法を用いた窒化物系半導体層及びその成長方法、窒化物系半導体発光素子とその製造方法
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
KR100580307B1 (ko) * 1998-07-14 2006-05-16 후지쯔 가부시끼가이샤 반도체 레이저 및 반도체 장치
JP5080820B2 (ja) * 1998-07-31 2012-11-21 シャープ株式会社 窒化物半導体構造とその製造方法および発光素子
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
KR100865600B1 (ko) 2000-02-09 2008-10-27 노쓰 캐롤라이나 스테이트 유니버시티 갈륨 나이트라이드 반도체 구조물 및 그 제조 방법, 및 반도체 구조물 및 그 제조 방법
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP4665286B2 (ja) * 2000-03-24 2011-04-06 三菱化学株式会社 半導体基材及びその製造方法
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
WO2002013245A1 (en) 2000-08-04 2002-02-14 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
USRE46589E1 (en) * 2001-01-16 2017-10-24 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
WO2002103814A1 (en) * 2001-06-15 2002-12-27 Cree, Inc. Gan based led formed on a sic substrate
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP5013238B2 (ja) * 2001-09-11 2012-08-29 信越半導体株式会社 半導体多層構造
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
KR20040093712A (ko) * 2002-02-08 2004-11-08 크리 인코포레이티드 향상된 에피텍시 증착을 위한 탄화규소 기판 처리방법 및그에 의해 수득한 구조물과 장치
DE10212420A1 (de) * 2002-03-21 2003-10-16 Erich Thallner Einrichtung zur Aufnahme eines Wafers
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
KR101167590B1 (ko) * 2002-04-15 2012-07-27 더 리전츠 오브 더 유니버시티 오브 캘리포니아 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막
KR100460332B1 (ko) * 2002-05-23 2004-12-08 박정희 실리콘 카바이드 나노선의 제조방법
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
CN1682384B (zh) * 2002-09-19 2010-06-09 克里公司 包括锥形侧壁的涂有磷光体的发光二极管及其制造方法
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
JP2006511944A (ja) * 2002-12-20 2006-04-06 クリー　インコーポレイテッド 半導体メサ構造および導電性接合部を含む電子素子ならびに関連素子を形成する方法
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
GB2398672A (en) 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
FR2853451B1 (fr) * 2003-04-03 2005-08-05 St Microelectronics Sa Couches monocristallines heteroatomiques
US7531380B2 (en) * 2003-04-30 2009-05-12 Cree, Inc. Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
US7714345B2 (en) * 2003-04-30 2010-05-11 Cree, Inc. Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
US20080064773A1 (en) * 2003-05-22 2008-03-13 Sergeant's Pet Care Products Inc. Aerated gluten polymeric composition
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
WO2005060007A1 (en) * 2003-08-05 2005-06-30 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
KR100641989B1 (ko) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
JP2007511105A (ja) * 2003-11-12 2007-04-26 クリー　インコーポレイテッド 発光デバイス（ｌｅｄ）をその上に有する半導体ウエハ裏面を加工する方法およびその方法により形成されたｌｅｄ
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7518158B2 (en) 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7615689B2 (en) * 2004-02-12 2009-11-10 Seminis Vegatable Seeds, Inc. Methods for coupling resistance alleles in tomato
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US7355284B2 (en) * 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7872268B2 (en) * 2004-04-22 2011-01-18 Cree, Inc. Substrate buffer structure for group III nitride devices
CN101366121B (zh) * 2004-04-28 2011-05-04 沃提科尔公司 垂直结构半导体器件
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7084441B2 (en) 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7956360B2 (en) * 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
TWI433343B (zh) * 2004-06-22 2014-04-01 Verticle Inc 具有改良光輸出的垂直構造半導體裝置
US7339205B2 (en) 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
US7118262B2 (en) * 2004-07-23 2006-10-10 Cree, Inc. Reflective optical elements for semiconductor light emitting devices
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
TWI374552B (en) 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
JP2008519441A (ja) * 2004-10-28 2008-06-05 ニトロネックス コーポレイション 窒化ガリウム材料を用いるモノリシックマイクロ波集積回路
KR101344512B1 (ko) 2004-11-01 2013-12-23 더 리전츠 오브 더 유니버시티 오브 캘리포니아 매우 낮은 직렬－저항 및 개선된 히트 싱킹을 가진 발광 소자 제조용의 상호 맞물린 멀티－픽셀 어레이
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
US7465967B2 (en) 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7446345B2 (en) * 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI377602B (en) * 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
CN103925521A (zh) * 2005-12-21 2014-07-16 科锐公司 照明装置
WO2007073496A2 (en) * 2005-12-22 2007-06-28 Cree Led Lighting Solutions, Inc. Lighting device
US7772604B2 (en) * 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7442564B2 (en) * 2006-01-19 2008-10-28 Cree, Inc. Dispensed electrical interconnections
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
JP2009524247A (ja) * 2006-01-20 2009-06-25 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド ルミファー膜を空間的に分離することにより固体光発光素子におけるスペクトル内容をシフトすること
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
JP2009538532A (ja) 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
US7718991B2 (en) * 2006-05-23 2010-05-18 Cree Led Lighting Solutions, Inc. Lighting device and method of making
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
KR20090019871A (ko) 2006-05-31 2009-02-25 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US7943952B2 (en) * 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US20100269819A1 (en) * 2006-08-14 2010-10-28 Sievers Robert E Human Powered Dry Powder Inhaler and Dry Powder Inhaler Compositions
US7763478B2 (en) 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
JP2010502014A (ja) 2006-08-23 2010-01-21 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および照明方法
US8222057B2 (en) * 2006-08-29 2012-07-17 University Of Florida Research Foundation, Inc. Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
US20090275266A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device polishing
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
US8304756B2 (en) * 2006-10-18 2012-11-06 Nitek, Inc. Deep ultraviolet light emitting device and method for fabricating same
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
CA2669228C (en) * 2006-11-15 2014-12-16 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
US9318327B2 (en) 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
JP2008205063A (ja) * 2007-02-19 2008-09-04 Sanyo Electric Co Ltd 太陽電池モジュール
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8409972B2 (en) * 2007-04-11 2013-04-02 Cree, Inc. Light emitting diode having undoped and unintentionally doped nitride transition layer
US7910944B2 (en) 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
US8042971B2 (en) 2007-06-27 2011-10-25 Cree, Inc. Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods
US20090002979A1 (en) * 2007-06-27 2009-01-01 Cree, Inc. Light emitting device (led) lighting systems for emitting light in multiple directions and related methods
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
EP2171502B1 (en) * 2007-07-17 2016-09-14 Cree, Inc. Optical elements with internal optical features and methods of fabricating same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
TW200919696A (en) * 2007-10-26 2009-05-01 Led Lighting Fixtures Inc Illumination device having one or more lumiphors, and methods of fabricating same
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
US8178888B2 (en) * 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
CN101939849A (zh) * 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8240875B2 (en) * 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
US7955875B2 (en) * 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
TW201034256A (en) * 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
KR100999756B1 (ko) * 2009-03-13 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20110012141A1 (en) 2009-07-15 2011-01-20 Le Toquin Ronan P Single-color wavelength-converted light emitting devices
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) * 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
KR101491528B1 (ko) * 2010-03-05 2015-02-09 나미키 세이미쓰 하우세키 가부시키가이샤 단결정 기판, 단결정 기판의 제조 방법, 다층막이 형성된 단결정 기판의 제조 방법 및 소자 제조 방법
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
TWI508327B (zh) * 2010-03-05 2015-11-11 Namiki Precision Jewel Co Ltd An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like
TWI525664B (zh) * 2010-03-05 2016-03-11 Namiki Precision Jewel Co Ltd A crystalline film, a device, and a method for producing a crystalline film or device
US8508127B2 (en) * 2010-03-09 2013-08-13 Cree, Inc. High CRI lighting device with added long-wavelength blue color
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US20120049151A1 (en) * 2010-08-30 2012-03-01 Invenlux Corporation Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same
US8410679B2 (en) 2010-09-21 2013-04-02 Cree, Inc. Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
US9515229B2 (en) 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US8589120B2 (en) 2011-01-28 2013-11-19 Cree, Inc. Methods, systems, and apparatus for determining optical properties of elements of lighting components having similar color points
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9053958B2 (en) 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US10098197B2 (en) 2011-06-03 2018-10-09 Cree, Inc. Lighting devices with individually compensating multi-color clusters
US8921875B2 (en) 2011-05-10 2014-12-30 Cree, Inc. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
US8814621B2 (en) 2011-06-03 2014-08-26 Cree, Inc. Methods of determining and making red nitride compositions
US8729790B2 (en) 2011-06-03 2014-05-20 Cree, Inc. Coated phosphors and light emitting devices including the same
US8906263B2 (en) 2011-06-03 2014-12-09 Cree, Inc. Red nitride phosphors
US8747697B2 (en) 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
US8684569B2 (en) 2011-07-06 2014-04-01 Cree, Inc. Lens and trim attachment structure for solid state downlights
KR101880131B1 (ko) * 2011-07-15 2018-07-20 엘지이노텍 주식회사 발광소자 및 그 제조방법
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
CN102903812A (zh) * 2011-07-27 2013-01-30 南通同方半导体有限公司 一种能消除应力的发光二极管结构及其制作方法
CN106166160A (zh) 2011-09-16 2016-11-30 吉利德制药有限责任公司 用于治疗hcv的组合物
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
US8889159B2 (en) 2011-11-29 2014-11-18 Gilead Pharmasset Llc Compositions and methods for treating hepatitis C virus
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US9318669B2 (en) 2012-01-30 2016-04-19 Cree, Inc. Methods of determining and making red nitride compositions
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
SG10201706949VA (en) 2013-01-31 2017-09-28 Gilead Pharmasset Llc Combination formulation of two antiviral compounds
US9316382B2 (en) 2013-01-31 2016-04-19 Cree, Inc. Connector devices, systems, and related methods for connecting light emitting diode (LED) modules
US9039746B2 (en) 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9565782B2 (en) 2013-02-15 2017-02-07 Ecosense Lighting Inc. Field replaceable power supply cartridge
US9055643B2 (en) 2013-03-13 2015-06-09 Cree, Inc. Solid state lighting apparatus and methods of forming
US9102514B2 (en) * 2013-03-22 2015-08-11 Freescale Semiconductor, Inc Inhibiting propagation of surface cracks in a MEMS Device
CN103247549B (zh) * 2013-04-02 2015-11-18 中国电子科技集团公司第五十五研究所 一种台阶高度实时监控的碳化硅光敏掩膜刻蚀方法
US9240528B2 (en) 2013-10-03 2016-01-19 Cree, Inc. Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
US10477636B1 (en) 2014-10-28 2019-11-12 Ecosense Lighting Inc. Lighting systems having multiple light sources
KR102529980B1 (ko) 2014-11-06 2023-05-08 루미리즈 홀딩 비.브이. 상부 접점 아래에 트렌치를 갖는 발광 디바이스
US9985168B1 (en) 2014-11-18 2018-05-29 Cree, Inc. Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
US10431568B2 (en) 2014-12-18 2019-10-01 Cree, Inc. Light emitting diodes, components and related methods
US9869450B2 (en) 2015-02-09 2018-01-16 Ecosense Lighting Inc. Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector
US11306897B2 (en) 2015-02-09 2022-04-19 Ecosense Lighting Inc. Lighting systems generating partially-collimated light emissions
US9651227B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Low-profile lighting system having pivotable lighting enclosure
US9651216B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Lighting systems including asymmetric lens modules for selectable light distribution
US9746159B1 (en) 2015-03-03 2017-08-29 Ecosense Lighting Inc. Lighting system having a sealing system
US9568665B2 (en) 2015-03-03 2017-02-14 Ecosense Lighting Inc. Lighting systems including lens modules for selectable light distribution
CN113130725B (zh) 2015-03-31 2024-09-24 科锐Led公司 具有包封的发光二极管和方法
EP3289281A1 (en) 2015-04-30 2018-03-07 Cree, Inc. Solid state lighting components
USD785218S1 (en) 2015-07-06 2017-04-25 Ecosense Lighting Inc. LED luminaire having a mounting system
US10074635B2 (en) 2015-07-17 2018-09-11 Cree, Inc. Solid state light emitter devices and methods
USD782094S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782093S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
US9651232B1 (en) 2015-08-03 2017-05-16 Ecosense Lighting Inc. Lighting system having a mounting device
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
WO2018022456A1 (en) 2016-07-26 2018-02-01 Cree, Inc. Light emitting diodes, components and related methods
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
WO2018052902A1 (en) 2016-09-13 2018-03-22 Cree, Inc. Light emitting diodes, components and related methods
US10804251B2 (en) 2016-11-22 2020-10-13 Cree, Inc. Light emitting diode (LED) devices, components and methods
US10439114B2 (en) 2017-03-08 2019-10-08 Cree, Inc. Substrates for light emitting diodes and related methods
US10410997B2 (en) 2017-05-11 2019-09-10 Cree, Inc. Tunable integrated optics LED components and methods
JP7042457B2 (ja) * 2017-06-06 2022-03-28 パナソニックＩｐマネジメント株式会社 蛍光体および発光装置
EP3428975A1 (en) 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
US11107857B2 (en) 2017-08-18 2021-08-31 Creeled, Inc. Light emitting diodes, components and related methods
US11101248B2 (en) 2017-08-18 2021-08-24 Creeled, Inc. Light emitting diodes, components and related methods
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
US10734560B2 (en) 2017-11-29 2020-08-04 Cree, Inc. Configurable circuit layout for LEDs
US10573543B2 (en) 2018-04-30 2020-02-25 Cree, Inc. Apparatus and methods for mass transfer of electronic die
US11024785B2 (en) 2018-05-25 2021-06-01 Creeled, Inc. Light-emitting diode packages
US11101410B2 (en) 2018-05-30 2021-08-24 Creeled, Inc. LED systems, apparatuses, and methods
US10453827B1 (en) 2018-05-30 2019-10-22 Cree, Inc. LED apparatuses and methods
WO2019236325A1 (en) 2018-06-04 2019-12-12 Cree, Inc. Led apparatuses, and method
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
US10964866B2 (en) 2018-08-21 2021-03-30 Cree, Inc. LED device, system, and method with adaptive patterns
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11393948B2 (en) 2018-08-31 2022-07-19 Creeled, Inc. Group III nitride LED structures with improved electrical performance
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396929A (en) * 1979-10-19 1983-08-02 Matsushita Electric Industrial Company, Ltd. Gallium nitride light-emitting element and method of manufacturing the same
JPS6376451A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 化合物半導体結晶基板の製造方法
US4865685A (en) 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
EP0352472A3 (en) 1988-07-25 1991-02-06 Texas Instruments Incorporated Heteroepitaxy of lattice-mismatched semiconductor materials
GB8905511D0 (en) 1989-03-10 1989-04-19 British Telecomm Preparing substrates
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
JP3142312B2 (ja) * 1991-07-30 2001-03-07 株式会社東芝 六方晶半導体の結晶成長方法
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
JP3243111B2 (ja) 1993-03-15 2002-01-07 株式会社東芝 化合物半導体素子
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5661074A (en) 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
EP0852416B1 (en) * 1995-09-18 2002-07-10 Hitachi, Ltd. Semiconductor material, method of producing the semiconductor material, and semiconductor device
US5972730A (en) * 1996-09-26 1999-10-26 Kabushiki Kaisha Toshiba Nitride based compound semiconductor light emitting device and method for producing the same
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED

Also Published As

Publication number Publication date
WO1999018617A1 (en) 1999-04-15
CN1278949A (zh) 2001-01-03
US6187606B1 (en) 2001-02-13
US6630690B2 (en) 2003-10-07
US6201262B1 (en) 2001-03-13
KR20010031003A (ko) 2001-04-16
JP4061019B2 (ja) 2008-03-12
CA2305203A1 (en) 1999-04-15
JP2001519603A (ja) 2001-10-23
US6492193B1 (en) 2002-12-10
AU9689098A (en) 1999-04-27
JP4966645B2 (ja) 2012-07-04
KR100592897B1 (ko) 2006-06-23
US6373077B1 (en) 2002-04-16
JP2007180556A (ja) 2007-07-12
EP1027736A1 (en) 2000-08-16
CA2305203C (en) 2005-11-29
US20020008241A1 (en) 2002-01-24

Similar Documents

Publication Publication Date Title
CN1185719C (zh) 碳化硅衬底上具有导电缓冲中间层结构的ⅲ族氮化物光子器件
CN1189920C (zh) 制备ⅲ族氮化物半导体的方法及ⅲ族氮化物半导体器件
CN100350637C (zh) 具有量子阱和超晶格的基于ⅲ族氮化物的发光二极管结构
CN1206744C (zh) 垂直结构lnGaN发光二极管
CN1298023C (zh) 制备ⅲ族氮化物半导体的方法及ⅲ族氮化物半导体器件
CN1157804C (zh) 氮化半导体器件及其制造方法
US6489636B1 (en) Indium gallium nitride smoothing structures for III-nitride devices
Chan et al. Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
CN1698212A (zh) 使用氮化物半导体的发光器件和其制造方法
CN102569576A (zh) 生长在模板上以减小应变的iii-氮化物发光二极管
CN1622350A (zh) 半导体发光元件及其制造方法
CN113809207B (zh) 一种Micro-LED制备方法
CN1934719A (zh) 氮化物半导体发光器件及其制造方法
US20110024775A1 (en) Methods for and devices made using multiple stage growths
WO2010110608A2 (ko) 질화물계 반도체 발광소자
CN114628557A (zh) Led外延结构及其制备方法和led器件
KR100730753B1 (ko) 질화물 반도체 발광 다이오드를 제조하는 방법 및 그것에의해 제조된 발광 다이오드
EP2728629B1 (en) Hetero-Substrate for nitride-Based Semiconductor Light Emitting Device, and Method for Manufacturing the same
CN220121867U (zh) 一种led外延结构
CN214099643U (zh) Led外延结构和led器件
KR100906921B1 (ko) 발광 다이오드 제조 방법
WO2021056472A1 (zh) 一种多量子阱结构、光电器件外延片及光电器件
US20120305888A1 (en) Light-emitting diode with strain-relaxed layer
CN116936696A (zh) 发光二极管外延片及其制备方法、led
CN1489223A (zh) 发光二极体结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20050119