JP2008205063A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2008205063A JP2008205063A JP2007037367A JP2007037367A JP2008205063A JP 2008205063 A JP2008205063 A JP 2008205063A JP 2007037367 A JP2007037367 A JP 2007037367A JP 2007037367 A JP2007037367 A JP 2007037367A JP 2008205063 A JP2008205063 A JP 2008205063A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 118
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 28
- 238000010248 power generation Methods 0.000 claims description 72
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000013081 microcrystal Substances 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 30
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000005856 abnormality Effects 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- -1 Polyethylene Terephthalate Polymers 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
【解決手段】この太陽電池モジュール1は、表面電極層3と、表面電極層3の表面上に形成されるアモルファスシリコン層からなる光電変換層4および微結晶シリコン層からなる光電変換層5より構成される発電層6と、発電層6の表面上に形成される裏面電極層7とが積層された互いに隣接するセル10aおよびセル10bを備え、セル10aの表面電極層3aとセル10bの裏面電極層7bとは、電気的に接続されており、発電層6の所定の領域には、発電層6の全体としての厚みよりも小さい厚みを有する応力緩和溝5fが形成されている。
【選択図】図2
Description
図1は、本発明の第1実施形態による太陽電池モジュールの構成を示す断面図である。図2および図3は、それぞれ、図1に示した太陽電池モジュールの詳細を説明するための斜視図および平面図である。まず、図1〜図3を参照して、本発明の第1実施形態による太陽電池モジュール1の構造を説明する。
図17は、本発明の第2実施形態による太陽電池モジュールの構成を示す断面図である。図18および図19は、それぞれ、図17に示した太陽電池モジュールの詳細を説明するための斜視図および平面図である。この第2実施形態では、発電層のみに応力緩和溝を形成した上記第1実施形態と異なり、発電層から裏面電極層に渡って応力緩和溝を形成した例を説明する。まず、図17〜図19を参照して、第2実施形態による太陽電池モジュール11の構造を説明する。
図25は、本発明の第3実施形態による太陽電池モジュールの構成を示す断面図である。この第3実施形態では、上記第1実施形態の構造において、発電層に形成した応力緩和溝を微結晶シリコンからなる光電変換層を貫通してアモルファスシリコンからなる光電変換層まで到達するように形成した例を説明する。まず、図25を参照して、第3実施形態による太陽電池モジュール21の構造を説明する。
図31は、本発明の第4実施形態による太陽電池モジュールの構成を示す断面図である。この第4実施形態では、上記第2実施形態の構造において、発電層に形成した応力緩和溝を微結晶シリコンからなる光電変換層を貫通してアモルファスシリコンからなる光電変換層まで到達するように形成した例を説明する。まず、図31を参照して、第4実施形態による太陽電池モジュール31の構造を説明する。
3、3a、3b 表面電極層(第1電極層)
4、24、34 光電変換層(第1光電変換層)
5、25、35 光電変換層(第2光電変換層)
6、26、36 発電層
7、7a、7b、17、17a、17b、37、37a、37b 裏面電極層(第2電極層)
10a、20a、30a、40a セル(第1セル)
10b、20b、30b、40b セル(第2セル)
5f、5g、5h、5i、20e、30e、40e 応力緩和溝(応力緩和領域)
Claims (6)
- 第1電極層と、前記第1電極層の表面上に形成されるアモルファスシリコン層からなる第1光電変換層および微結晶シリコン層からなる第2光電変換層より構成される発電層と、前記発電層の表面上に形成される第2電極層とが積層された互いに隣接する第1セルおよび第2セルを備え、
前記第1セルの第1電極層と前記第2セルの第2電極層とは、電気的に接続されており、
前記発電層の所定領域には、前記発電層の全体としての厚みよりも小さい厚みを有する応力緩和領域が形成されている、太陽電池モジュール。 - 前記発電層の応力緩和領域は、平面的に見て溝状または孔状に形成されており、
前記応力緩和領域には、前記第2電極層が充填されている、請求項1に記載の太陽電池モジュール。 - 前記応力緩和領域は、平面的に見て、前記第1セルと前記第2セルとの接続方向と実質的に直交する方向に延びるように溝状に形成されている、請求項1または2に記載の太陽電池モジュール。
- 前記応力緩和領域は、平面的に見て、前記第1セルと前記第2セルとの接続方向と実質的に平行な方向に延びるように溝状に形成されている、請求項1または2に記載の太陽電池モジュール。
- 前記第2電極層は、前記応力緩和領域と対応する領域に設けられた開口領域を含む、請求項1〜4のいずれか1項に記載の太陽電池モジュール。
- 前記微結晶シリコン層からなる第2光電変換層は、p層、i層およびn層からなるとともに、前記第1光電変換層の上面上に形成されており、
前記発電層の応力緩和領域は、前記第2光電変換層のi層の一部を残すように溝状または孔状に形成されている、請求項1〜5のいずれか1項に記載の太陽電池モジュール。
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JP2007037367A JP2008205063A (ja) | 2007-02-19 | 2007-02-19 | 太陽電池モジュール |
US12/033,495 US20080276980A1 (en) | 2007-02-19 | 2008-02-19 | Solar cell module |
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JP2007037367A JP2008205063A (ja) | 2007-02-19 | 2007-02-19 | 太陽電池モジュール |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010171374A (ja) * | 2008-12-26 | 2010-08-05 | Kyocera Corp | 太陽電池 |
KR101154785B1 (ko) * | 2009-06-30 | 2012-06-18 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5168428B2 (ja) * | 2010-03-18 | 2013-03-21 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
CN109860331A (zh) * | 2018-11-28 | 2019-06-07 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池组件的制备方法 |
WO2023190570A1 (ja) * | 2022-03-31 | 2023-10-05 | 株式会社カネカ | 太陽電池サブモジュール及び太陽電池サブモジュール製造方法 |
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JP2010272738A (ja) * | 2009-05-22 | 2010-12-02 | Sanyo Electric Co Ltd | 太陽電池モジュールの製造方法 |
US20100313952A1 (en) * | 2009-06-10 | 2010-12-16 | Thinsilicion Corporation | Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks |
KR20110008640A (ko) * | 2009-07-20 | 2011-01-27 | 삼성전자주식회사 | 태양 전지 모듈 및 그 제조 방법 |
KR101112487B1 (ko) * | 2009-08-06 | 2012-03-09 | 한국과학기술원 | 광기전력 장치 및 그 제조 방법 |
KR101091253B1 (ko) | 2009-11-03 | 2011-12-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP6084648B2 (ja) * | 2015-03-24 | 2017-02-22 | 株式会社東芝 | 光電変換素子および光電変換素子の製造方法 |
US20160284887A1 (en) * | 2015-03-27 | 2016-09-29 | Gabriel Harley | Crack prevention for solar cells |
CN116613230A (zh) * | 2023-06-26 | 2023-08-18 | 云谷(固安)科技有限公司 | 太阳能电池及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000114556A (ja) * | 1998-09-30 | 2000-04-21 | Sharp Corp | 太陽電池およびその製造方法 |
JP2000261009A (ja) * | 1999-03-10 | 2000-09-22 | Sanyo Electric Co Ltd | 集積型光起電力装置 |
JP2001068714A (ja) * | 1999-08-25 | 2001-03-16 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換モジュール及びその製造方法 |
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004186443A (ja) * | 2002-12-03 | 2004-07-02 | Kanegafuchi Chem Ind Co Ltd | 透光性薄膜太陽電池及び透光性薄膜太陽電池モジュール |
JP2005286013A (ja) * | 2004-03-29 | 2005-10-13 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法及び太陽電池セル |
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2007035695A (ja) * | 2005-07-22 | 2007-02-08 | Kaneka Corp | 集積型薄膜太陽電池モジュール |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6531653B1 (en) * | 2001-09-11 | 2003-03-11 | The Boeing Company | Low cost high solar flux photovoltaic concentrator receiver |
EP1369931A1 (en) * | 2002-06-03 | 2003-12-10 | Hitachi, Ltd. | Solar cell and its manufacturing method, metal plate for the same |
JP4194468B2 (ja) * | 2003-10-10 | 2008-12-10 | シャープ株式会社 | 太陽電池およびその製造方法 |
-
2007
- 2007-02-19 JP JP2007037367A patent/JP2008205063A/ja not_active Withdrawn
-
2008
- 2008-02-19 US US12/033,495 patent/US20080276980A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000114556A (ja) * | 1998-09-30 | 2000-04-21 | Sharp Corp | 太陽電池およびその製造方法 |
JP2000261009A (ja) * | 1999-03-10 | 2000-09-22 | Sanyo Electric Co Ltd | 集積型光起電力装置 |
JP2001068714A (ja) * | 1999-08-25 | 2001-03-16 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換モジュール及びその製造方法 |
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004186443A (ja) * | 2002-12-03 | 2004-07-02 | Kanegafuchi Chem Ind Co Ltd | 透光性薄膜太陽電池及び透光性薄膜太陽電池モジュール |
JP2005286013A (ja) * | 2004-03-29 | 2005-10-13 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法及び太陽電池セル |
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2007035695A (ja) * | 2005-07-22 | 2007-02-08 | Kaneka Corp | 集積型薄膜太陽電池モジュール |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010171374A (ja) * | 2008-12-26 | 2010-08-05 | Kyocera Corp | 太陽電池 |
KR101154785B1 (ko) * | 2009-06-30 | 2012-06-18 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5168428B2 (ja) * | 2010-03-18 | 2013-03-21 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
CN109860331A (zh) * | 2018-11-28 | 2019-06-07 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池组件的制备方法 |
WO2023190570A1 (ja) * | 2022-03-31 | 2023-10-05 | 株式会社カネカ | 太陽電池サブモジュール及び太陽電池サブモジュール製造方法 |
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