JP4032482B2 - 単結晶ダイヤモンドの製造方法 - Google Patents

単結晶ダイヤモンドの製造方法 Download PDF

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Publication number
JP4032482B2
JP4032482B2 JP04332598A JP4332598A JP4032482B2 JP 4032482 B2 JP4032482 B2 JP 4032482B2 JP 04332598 A JP04332598 A JP 04332598A JP 4332598 A JP4332598 A JP 4332598A JP 4032482 B2 JP4032482 B2 JP 4032482B2
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Japan
Prior art keywords
crystal diamond
single crystal
plane
base material
cutting
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Expired - Lifetime
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JP04332598A
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English (en)
Japanese (ja)
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JPH111392A (ja
JPH111392A5 (https=
Inventor
裕久 斉藤
孝 築野
貴浩 今井
佳明 熊澤
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP04332598A priority Critical patent/JP4032482B2/ja
Priority to US09/060,555 priority patent/US6096129A/en
Priority to EP98302982A priority patent/EP0879904B1/en
Priority to DE69802037T priority patent/DE69802037T2/de
Publication of JPH111392A publication Critical patent/JPH111392A/ja
Publication of JPH111392A5 publication Critical patent/JPH111392A5/ja
Application granted granted Critical
Publication of JP4032482B2 publication Critical patent/JP4032482B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP04332598A 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法 Expired - Lifetime JP4032482B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04332598A JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法
US09/060,555 US6096129A (en) 1997-04-18 1998-04-15 Method of and apparatus for producing single-crystalline diamond of large size
EP98302982A EP0879904B1 (en) 1997-04-18 1998-04-17 Method and apparatus for producing single-crystalline diamond
DE69802037T DE69802037T2 (de) 1997-04-18 1998-04-17 Verfahren und Vorrichtung zur Herstellung von einkristallinem Diamant

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10161397 1997-04-18
JP9-101613 1997-04-18
JP04332598A JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法

Publications (3)

Publication Number Publication Date
JPH111392A JPH111392A (ja) 1999-01-06
JPH111392A5 JPH111392A5 (https=) 2005-08-04
JP4032482B2 true JP4032482B2 (ja) 2008-01-16

Family

ID=26383082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04332598A Expired - Lifetime JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法

Country Status (4)

Country Link
US (1) US6096129A (https=)
EP (1) EP0879904B1 (https=)
JP (1) JP4032482B2 (https=)
DE (1) DE69802037T2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591856B2 (en) 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
DE60135653D1 (de) 2000-06-15 2008-10-16 Element Six Pty Ltd Einkristalldiamant hergestellt durch cvd
JP4469552B2 (ja) * 2000-06-15 2010-05-26 エレメント シックス （プロプライエタリイ）リミテッド 厚い単結晶ダイヤモンド層、それを造る方法及びその層から形成された宝石の原石
AU2001281404B2 (en) * 2001-08-08 2008-07-03 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0130004D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
US7060130B2 (en) * 2002-08-27 2006-06-13 Board Of Trustees Of Michigan State University Heteroepitaxial diamond and diamond nuclei precursors
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
GB0303860D0 (en) 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
CA2548449C (en) 2003-12-12 2014-06-03 Element Six Limited Method of incorporating a mark in cvd diamond
KR101240785B1 (ko) 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
JP5594613B2 (ja) * 2005-04-15 2014-09-24 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
KR101307032B1 (ko) 2005-06-22 2013-09-11 엘리멘트 식스 리미티드 고등급의 색을 갖는 다이아몬드 층
US7399358B2 (en) * 2005-09-05 2008-07-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
JP4873368B2 (ja) * 2007-01-24 2012-02-08 住友電気工業株式会社 ダイヤモンド基板
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
US8342164B2 (en) * 2008-05-09 2013-01-01 SCIO Diamond Technology Corporation Gemstone production from CVD diamond plate
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
US9157170B2 (en) 2009-12-21 2015-10-13 Element Six Technologies Limited Single crystal diamond material
GB2476306B (en) * 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
GB201000768D0 (en) 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
JP5831796B2 (ja) * 2011-09-06 2015-12-09 住友電気工業株式会社 ダイヤモンド複合体およびそれから分離した単結晶ダイヤモンド、及びダイヤモンド複合体の製造方法
WO2014028831A1 (en) * 2012-08-17 2014-02-20 Gtat Corporation System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein
EP3054036B1 (en) * 2013-09-30 2021-03-03 Adamant Namiki Precision Jewel Co., Ltd. Diamond substrate manufacturing method
CN108908762A (zh) * 2018-06-15 2018-11-30 西安碳星半导体科技有限公司 Cvd生长宝石级厚单晶金刚石切割方法
CN110789011A (zh) * 2019-11-07 2020-02-14 北京昌日新能源科技有限公司 一种新型光伏用直角单晶硅片及其制造方法
CN111690981B (zh) * 2020-07-23 2021-08-03 太原理工大学 一种扩大单晶金刚石籽晶尺寸及数量的方法
CN111850682B (zh) * 2020-07-23 2021-09-07 太原理工大学 同时扩大单晶金刚石籽晶尺寸及数量的方法
PL4269004T3 (pl) * 2020-12-24 2025-03-03 Sumitomo Electric Hardmetal Corp. Sposób wytwarzania półproduktu narzędzia diamentowego i sposób określania dla diamentu monokrystalicznego
GB2609023A (en) * 2021-07-18 2023-01-25 Lusix Ltd Growing of diamonds
CN114232091B (zh) * 2021-12-27 2024-05-10 苏州贝莱克金刚石科技有限公司 大尺寸单晶金刚石及其制备方法
GB202305972D0 (en) 2023-04-24 2023-06-07 Element Six Tech Ltd Method of manufacturing single crystal diamonds

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103993A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンド単結晶成長方法
JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US5499601A (en) * 1993-01-14 1996-03-19 Sumitomo Electric Industries, Ltd. Method for vapor phase synthesis of diamond

Also Published As

Publication number Publication date
US6096129A (en) 2000-08-01
EP0879904A1 (en) 1998-11-25
JPH111392A (ja) 1999-01-06
DE69802037D1 (de) 2001-11-22
EP0879904B1 (en) 2001-10-17
DE69802037T2 (de) 2002-03-14

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