DE69802037T2 - Verfahren und Vorrichtung zur Herstellung von einkristallinem Diamant - Google Patents
Verfahren und Vorrichtung zur Herstellung von einkristallinem DiamantInfo
- Publication number
- DE69802037T2 DE69802037T2 DE69802037T DE69802037T DE69802037T2 DE 69802037 T2 DE69802037 T2 DE 69802037T2 DE 69802037 T DE69802037 T DE 69802037T DE 69802037 T DE69802037 T DE 69802037T DE 69802037 T2 DE69802037 T2 DE 69802037T2
- Authority
- DE
- Germany
- Prior art keywords
- crystal diamond
- planes
- base material
- side surfaces
- inclination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 title claims description 219
- 229910003460 diamond Inorganic materials 0.000 title claims description 218
- 239000013078 crystal Substances 0.000 title claims description 169
- 238000000034 method Methods 0.000 title claims description 30
- 239000000463 material Substances 0.000 claims description 172
- 238000005520 cutting process Methods 0.000 claims description 60
- 238000007740 vapor deposition Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 17
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000977 initiatory effect Effects 0.000 claims 2
- 230000002159 abnormal effect Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000001657 homoepitaxy Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10161397 | 1997-04-18 | ||
| JP04332598A JP4032482B2 (ja) | 1997-04-18 | 1998-02-25 | 単結晶ダイヤモンドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69802037D1 DE69802037D1 (de) | 2001-11-22 |
| DE69802037T2 true DE69802037T2 (de) | 2002-03-14 |
Family
ID=26383082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69802037T Expired - Lifetime DE69802037T2 (de) | 1997-04-18 | 1998-04-17 | Verfahren und Vorrichtung zur Herstellung von einkristallinem Diamant |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6096129A (https=) |
| EP (1) | EP0879904B1 (https=) |
| JP (1) | JP4032482B2 (https=) |
| DE (1) | DE69802037T2 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
| US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6858080B2 (en) | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
| DE60135653D1 (de) | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
| JP4469552B2 (ja) * | 2000-06-15 | 2010-05-26 | エレメント シックス （プロプライエタリイ）リミテッド | 厚い単結晶ダイヤモンド層、それを造る方法及びその層から形成された宝石の原石 |
| AU2001281404B2 (en) * | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| GB0130004D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
| GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| US7060130B2 (en) * | 2002-08-27 | 2006-06-13 | Board Of Trustees Of Michigan State University | Heteroepitaxial diamond and diamond nuclei precursors |
| RU2328563C2 (ru) * | 2002-09-06 | 2008-07-10 | Элемент Сикс Лимитед | Цветные алмазы |
| GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
| GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
| GB0303860D0 (en) | 2003-02-19 | 2003-03-26 | Element Six Ltd | CVD diamond in wear applications |
| CA2548449C (en) | 2003-12-12 | 2014-06-03 | Element Six Limited | Method of incorporating a mark in cvd diamond |
| KR101240785B1 (ko) | 2003-12-12 | 2013-03-07 | 엘리멘트 식스 리미티드 | 화학적 증착 다이아몬드에 마크를 통합시키는 방법 |
| JP5163920B2 (ja) * | 2005-03-28 | 2013-03-13 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板 |
| JP5594613B2 (ja) * | 2005-04-15 | 2014-09-24 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
| JP5002982B2 (ja) * | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
| JP4613314B2 (ja) * | 2005-05-26 | 2011-01-19 | 独立行政法人産業技術総合研究所 | 単結晶の製造方法 |
| KR101307032B1 (ko) | 2005-06-22 | 2013-09-11 | 엘리멘트 식스 리미티드 | 고등급의 색을 갖는 다이아몬드 층 |
| US7399358B2 (en) * | 2005-09-05 | 2008-07-15 | Rajneesh Bhandari | Synthesis of large homoepitaxial monocrystalline diamond |
| JP4873368B2 (ja) * | 2007-01-24 | 2012-02-08 | 住友電気工業株式会社 | ダイヤモンド基板 |
| GB0704516D0 (en) * | 2007-03-08 | 2007-04-18 | Element Six Ltd | Diamond |
| US8342164B2 (en) * | 2008-05-09 | 2013-01-01 | SCIO Diamond Technology Corporation | Gemstone production from CVD diamond plate |
| GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
| GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
| GB0900771D0 (en) | 2009-01-16 | 2009-03-04 | Element Six Ltd | Diamond |
| US9157170B2 (en) | 2009-12-21 | 2015-10-13 | Element Six Technologies Limited | Single crystal diamond material |
| GB2476306B (en) * | 2009-12-21 | 2012-07-11 | Element Six Ltd | Single crystal diamond material |
| GB201000768D0 (en) | 2010-01-18 | 2010-03-03 | Element Six Ltd | CVD single crystal diamond material |
| US9017633B2 (en) * | 2010-01-18 | 2015-04-28 | Element Six Technologies Limited | CVD single crystal diamond material |
| JP5831796B2 (ja) * | 2011-09-06 | 2015-12-09 | 住友電気工業株式会社 | ダイヤモンド複合体およびそれから分離した単結晶ダイヤモンド、及びダイヤモンド複合体の製造方法 |
| WO2014028831A1 (en) * | 2012-08-17 | 2014-02-20 | Gtat Corporation | System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein |
| EP3054036B1 (en) * | 2013-09-30 | 2021-03-03 | Adamant Namiki Precision Jewel Co., Ltd. | Diamond substrate manufacturing method |
| CN108908762A (zh) * | 2018-06-15 | 2018-11-30 | 西安碳星半导体科技有限公司 | Cvd生长宝石级厚单晶金刚石切割方法 |
| CN110789011A (zh) * | 2019-11-07 | 2020-02-14 | 北京昌日新能源科技有限公司 | 一种新型光伏用直角单晶硅片及其制造方法 |
| CN111690981B (zh) * | 2020-07-23 | 2021-08-03 | 太原理工大学 | 一种扩大单晶金刚石籽晶尺寸及数量的方法 |
| CN111850682B (zh) * | 2020-07-23 | 2021-09-07 | 太原理工大学 | 同时扩大单晶金刚石籽晶尺寸及数量的方法 |
| PL4269004T3 (pl) * | 2020-12-24 | 2025-03-03 | Sumitomo Electric Hardmetal Corp. | Sposób wytwarzania półproduktu narzędzia diamentowego i sposób określania dla diamentu monokrystalicznego |
| GB2609023A (en) * | 2021-07-18 | 2023-01-25 | Lusix Ltd | Growing of diamonds |
| CN114232091B (zh) * | 2021-12-27 | 2024-05-10 | 苏州贝莱克金刚石科技有限公司 | 大尺寸单晶金刚石及其制备方法 |
| GB202305972D0 (en) | 2023-04-24 | 2023-06-07 | Element Six Tech Ltd | Method of manufacturing single crystal diamonds |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103993A (ja) * | 1987-10-16 | 1989-04-21 | Sumitomo Electric Ind Ltd | ダイヤモンド単結晶成長方法 |
| JPH01103994A (ja) * | 1987-10-16 | 1989-04-21 | Sumitomo Electric Ind Ltd | ダイヤモンドの単結晶成長方法 |
| US5127983A (en) * | 1989-05-22 | 1992-07-07 | Sumitomo Electric Industries, Ltd. | Method of producing single crystal of high-pressure phase material |
| US5474021A (en) * | 1992-09-24 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | Epitaxial growth of diamond from vapor phase |
| US5499601A (en) * | 1993-01-14 | 1996-03-19 | Sumitomo Electric Industries, Ltd. | Method for vapor phase synthesis of diamond |
-
1998
- 1998-02-25 JP JP04332598A patent/JP4032482B2/ja not_active Expired - Lifetime
- 1998-04-15 US US09/060,555 patent/US6096129A/en not_active Expired - Lifetime
- 1998-04-17 DE DE69802037T patent/DE69802037T2/de not_active Expired - Lifetime
- 1998-04-17 EP EP98302982A patent/EP0879904B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6096129A (en) | 2000-08-01 |
| JP4032482B2 (ja) | 2008-01-16 |
| EP0879904A1 (en) | 1998-11-25 |
| JPH111392A (ja) | 1999-01-06 |
| DE69802037D1 (de) | 2001-11-22 |
| EP0879904B1 (en) | 2001-10-17 |
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