DE69327548T2 - Diamantkristall und Verfahren zu seiner Herstellung - Google Patents

Diamantkristall und Verfahren zu seiner Herstellung

Info

Publication number
DE69327548T2
DE69327548T2 DE69327548T DE69327548T DE69327548T2 DE 69327548 T2 DE69327548 T2 DE 69327548T2 DE 69327548 T DE69327548 T DE 69327548T DE 69327548 T DE69327548 T DE 69327548T DE 69327548 T2 DE69327548 T2 DE 69327548T2
Authority
DE
Germany
Prior art keywords
manufacture
diamond crystal
diamond
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69327548T
Other languages
English (en)
Other versions
DE69327548D1 (de
Inventor
Keiji Hirabayashi
Yoichi Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69327548D1 publication Critical patent/DE69327548D1/de
Application granted granted Critical
Publication of DE69327548T2 publication Critical patent/DE69327548T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/30Self-sustaining carbon mass or layer with impregnant or other layer
DE69327548T 1992-03-26 1993-03-24 Diamantkristall und Verfahren zu seiner Herstellung Expired - Lifetime DE69327548T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04068680A JP3121102B2 (ja) 1992-03-26 1992-03-26 平板ダイヤモンド結晶、及びその形成方法

Publications (2)

Publication Number Publication Date
DE69327548D1 DE69327548D1 (de) 2000-02-17
DE69327548T2 true DE69327548T2 (de) 2000-06-21

Family

ID=13380685

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327548T Expired - Lifetime DE69327548T2 (de) 1992-03-26 1993-03-24 Diamantkristall und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (2) US5445851A (de)
EP (1) EP0562574B1 (de)
JP (1) JP3121102B2 (de)
DE (1) DE69327548T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69503285T2 (de) * 1994-04-07 1998-11-05 Sumitomo Electric Industries Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69526129T2 (de) 1994-05-23 2002-08-22 Sumitomo Electric Industries Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
JP3728464B2 (ja) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜気相合成用基板の製造方法
US5997956A (en) * 1995-08-04 1999-12-07 Microcoating Technologies Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions
DE69629651T2 (de) * 1995-12-21 2004-02-26 Element Six (Pty) Ltd. Diamantsynthese
AT411070B (de) * 1996-03-25 2003-09-25 Electrovac Verfahren zur herstellung eines substrates mit einer polykristallinen diamantschicht
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE69817642T2 (de) * 1997-03-10 2004-08-05 Sumitomo Electric Industries, Ltd. Elektronen-emittierendes Element, Herstellungsverfahren desselben, und Elektronenvorrichtung
US6727818B1 (en) * 1999-10-29 2004-04-27 Hill-Rom Services, Inc. Hygiene monitoring system
JP4199913B2 (ja) * 2000-09-28 2008-12-24 株式会社日立グローバルストレージテクノロジーズ 磁気記録媒体の製造方法
US7490021B2 (en) * 2003-10-07 2009-02-10 Hospira, Inc. Method for adjusting pump screen brightness
US20130045339A1 (en) * 2011-08-15 2013-02-21 Varian Semiconductor Equipment Associates, Inc. Techniques for diamond nucleation control for thin film processing
JP6561402B2 (ja) * 2015-05-19 2019-08-21 国立大学法人金沢大学 ダイヤモンドの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935303A (en) * 1987-10-15 1990-06-19 Canon Kabushiki Kaisha Novel diamond-like carbon film and process for the production thereof
US4932331A (en) * 1987-10-16 1990-06-12 Canon Kabushiki Kaisha Novel single-bond carbon film and process for the production thereof
JP2597497B2 (ja) * 1988-01-14 1997-04-09 洋一 広瀬 気相法ダイヤモンドの合成法
JP2637508B2 (ja) * 1988-02-08 1997-08-06 キヤノン株式会社 気相合成ダイヤモンド結晶の形成方法及びダイヤモンド結晶を有する基材
US5202156A (en) * 1988-08-16 1993-04-13 Canon Kabushiki Kaisha Method of making an optical element mold with a hard carbon film
US5026415A (en) * 1988-08-16 1991-06-25 Canon Kabushiki Kaisha Mold with hydrogenated amorphous carbon film for molding an optical element
GB2243150B (en) * 1990-03-28 1994-06-29 Kobe Steel Ltd Method for synthesizing diamond by combustion
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
WO1992022689A1 (en) * 1991-06-18 1992-12-23 The Board Of Governors Of Wayne State University Process for making large-area single crystal diamond films

Also Published As

Publication number Publication date
JPH05270977A (ja) 1993-10-19
US5445851A (en) 1995-08-29
EP0562574A2 (de) 1993-09-29
DE69327548D1 (de) 2000-02-17
EP0562574B1 (de) 2000-01-12
US5576107A (en) 1996-11-19
JP3121102B2 (ja) 2000-12-25
EP0562574A3 (en) 1994-08-24

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