DE69327548D1 - Diamantkristall und Verfahren zu seiner Herstellung - Google Patents
Diamantkristall und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69327548D1 DE69327548D1 DE69327548T DE69327548T DE69327548D1 DE 69327548 D1 DE69327548 D1 DE 69327548D1 DE 69327548 T DE69327548 T DE 69327548T DE 69327548 T DE69327548 T DE 69327548T DE 69327548 D1 DE69327548 D1 DE 69327548D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- diamond crystal
- diamond
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04068680A JP3121102B2 (ja) | 1992-03-26 | 1992-03-26 | 平板ダイヤモンド結晶、及びその形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69327548D1 true DE69327548D1 (de) | 2000-02-17 |
DE69327548T2 DE69327548T2 (de) | 2000-06-21 |
Family
ID=13380685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69327548T Expired - Lifetime DE69327548T2 (de) | 1992-03-26 | 1993-03-24 | Diamantkristall und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5445851A (de) |
EP (1) | EP0562574B1 (de) |
JP (1) | JP3121102B2 (de) |
DE (1) | DE69327548T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69503285T2 (de) * | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
DE69526129T2 (de) | 1994-05-23 | 2002-08-22 | Sumitomo Electric Industries | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
EP0699776B1 (de) * | 1994-06-09 | 1999-03-31 | Sumitomo Electric Industries, Limited | Wafer und Verfahren zur Herstellung eines Wafers |
JP3728464B2 (ja) * | 1994-11-25 | 2005-12-21 | 株式会社神戸製鋼所 | 単結晶ダイヤモンド膜気相合成用基板の製造方法 |
US5997956A (en) * | 1995-08-04 | 1999-12-07 | Microcoating Technologies | Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions |
DE69629651T2 (de) * | 1995-12-21 | 2004-02-26 | Element Six (Pty) Ltd. | Diamantsynthese |
AT411070B (de) * | 1996-03-25 | 2003-09-25 | Electrovac | Verfahren zur herstellung eines substrates mit einer polykristallinen diamantschicht |
GB9616043D0 (en) * | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
DE69817642T2 (de) * | 1997-03-10 | 2004-08-05 | Sumitomo Electric Industries, Ltd. | Elektronen-emittierendes Element, Herstellungsverfahren desselben, und Elektronenvorrichtung |
US6727818B1 (en) * | 1999-10-29 | 2004-04-27 | Hill-Rom Services, Inc. | Hygiene monitoring system |
JP4199913B2 (ja) * | 2000-09-28 | 2008-12-24 | 株式会社日立グローバルストレージテクノロジーズ | 磁気記録媒体の製造方法 |
US7490021B2 (en) * | 2003-10-07 | 2009-02-10 | Hospira, Inc. | Method for adjusting pump screen brightness |
US20130045339A1 (en) * | 2011-08-15 | 2013-02-21 | Varian Semiconductor Equipment Associates, Inc. | Techniques for diamond nucleation control for thin film processing |
JP6561402B2 (ja) * | 2015-05-19 | 2019-08-21 | 国立大学法人金沢大学 | ダイヤモンドの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935303A (en) * | 1987-10-15 | 1990-06-19 | Canon Kabushiki Kaisha | Novel diamond-like carbon film and process for the production thereof |
US4932331A (en) * | 1987-10-16 | 1990-06-12 | Canon Kabushiki Kaisha | Novel single-bond carbon film and process for the production thereof |
JP2597497B2 (ja) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | 気相法ダイヤモンドの合成法 |
JP2637508B2 (ja) * | 1988-02-08 | 1997-08-06 | キヤノン株式会社 | 気相合成ダイヤモンド結晶の形成方法及びダイヤモンド結晶を有する基材 |
US5202156A (en) * | 1988-08-16 | 1993-04-13 | Canon Kabushiki Kaisha | Method of making an optical element mold with a hard carbon film |
US5026415A (en) * | 1988-08-16 | 1991-06-25 | Canon Kabushiki Kaisha | Mold with hydrogenated amorphous carbon film for molding an optical element |
GB2243150B (en) * | 1990-03-28 | 1994-06-29 | Kobe Steel Ltd | Method for synthesizing diamond by combustion |
US5202571A (en) * | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
WO1992022689A1 (en) * | 1991-06-18 | 1992-12-23 | The Board Of Governors Of Wayne State University | Process for making large-area single crystal diamond films |
-
1992
- 1992-03-26 JP JP04068680A patent/JP3121102B2/ja not_active Expired - Lifetime
-
1993
- 1993-03-24 EP EP93104860A patent/EP0562574B1/de not_active Expired - Lifetime
- 1993-03-24 DE DE69327548T patent/DE69327548T2/de not_active Expired - Lifetime
-
1994
- 1994-08-29 US US08/297,901 patent/US5445851A/en not_active Expired - Lifetime
-
1995
- 1995-05-05 US US08/435,852 patent/US5576107A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05270977A (ja) | 1993-10-19 |
US5445851A (en) | 1995-08-29 |
EP0562574A2 (de) | 1993-09-29 |
EP0562574B1 (de) | 2000-01-12 |
US5576107A (en) | 1996-11-19 |
JP3121102B2 (ja) | 2000-12-25 |
DE69327548T2 (de) | 2000-06-21 |
EP0562574A3 (en) | 1994-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |