JPH111392A5 - - Google Patents

Info

Publication number
JPH111392A5
JPH111392A5 JP1998043325A JP4332598A JPH111392A5 JP H111392 A5 JPH111392 A5 JP H111392A5 JP 1998043325 A JP1998043325 A JP 1998043325A JP 4332598 A JP4332598 A JP 4332598A JP H111392 A5 JPH111392 A5 JP H111392A5
Authority
JP
Japan
Prior art keywords
single crystal
crystal diamond
side surfaces
main surface
upper ends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998043325A
Other languages
English (en)
Japanese (ja)
Other versions
JP4032482B2 (ja
JPH111392A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP04332598A priority Critical patent/JP4032482B2/ja
Priority claimed from JP04332598A external-priority patent/JP4032482B2/ja
Priority to US09/060,555 priority patent/US6096129A/en
Priority to EP98302982A priority patent/EP0879904B1/en
Priority to DE69802037T priority patent/DE69802037T2/de
Publication of JPH111392A publication Critical patent/JPH111392A/ja
Publication of JPH111392A5 publication Critical patent/JPH111392A5/ja
Application granted granted Critical
Publication of JP4032482B2 publication Critical patent/JP4032482B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP04332598A 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法 Expired - Lifetime JP4032482B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04332598A JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法
US09/060,555 US6096129A (en) 1997-04-18 1998-04-15 Method of and apparatus for producing single-crystalline diamond of large size
EP98302982A EP0879904B1 (en) 1997-04-18 1998-04-17 Method and apparatus for producing single-crystalline diamond
DE69802037T DE69802037T2 (de) 1997-04-18 1998-04-17 Verfahren und Vorrichtung zur Herstellung von einkristallinem Diamant

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10161397 1997-04-18
JP9-101613 1997-04-18
JP04332598A JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法

Publications (3)

Publication Number Publication Date
JPH111392A JPH111392A (ja) 1999-01-06
JPH111392A5 true JPH111392A5 (https=) 2005-08-04
JP4032482B2 JP4032482B2 (ja) 2008-01-16

Family

ID=26383082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04332598A Expired - Lifetime JP4032482B2 (ja) 1997-04-18 1998-02-25 単結晶ダイヤモンドの製造方法

Country Status (4)

Country Link
US (1) US6096129A (https=)
EP (1) EP0879904B1 (https=)
JP (1) JP4032482B2 (https=)
DE (1) DE69802037T2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591856B2 (en) 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
DE60135653D1 (de) 2000-06-15 2008-10-16 Element Six Pty Ltd Einkristalldiamant hergestellt durch cvd
JP4469552B2 (ja) * 2000-06-15 2010-05-26 エレメント シックス （プロプライエタリイ）リミテッド 厚い単結晶ダイヤモンド層、それを造る方法及びその層から形成された宝石の原石
AU2001281404B2 (en) * 2001-08-08 2008-07-03 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0130004D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
US7060130B2 (en) * 2002-08-27 2006-06-13 Board Of Trustees Of Michigan State University Heteroepitaxial diamond and diamond nuclei precursors
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
GB0303860D0 (en) 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
CA2548449C (en) 2003-12-12 2014-06-03 Element Six Limited Method of incorporating a mark in cvd diamond
KR101240785B1 (ko) 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
JP5594613B2 (ja) * 2005-04-15 2014-09-24 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
KR101307032B1 (ko) 2005-06-22 2013-09-11 엘리멘트 식스 리미티드 고등급의 색을 갖는 다이아몬드 층
US7399358B2 (en) * 2005-09-05 2008-07-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
JP4873368B2 (ja) * 2007-01-24 2012-02-08 住友電気工業株式会社 ダイヤモンド基板
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
US8342164B2 (en) * 2008-05-09 2013-01-01 SCIO Diamond Technology Corporation Gemstone production from CVD diamond plate
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
US9157170B2 (en) 2009-12-21 2015-10-13 Element Six Technologies Limited Single crystal diamond material
GB2476306B (en) * 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
GB201000768D0 (en) 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
JP5831796B2 (ja) * 2011-09-06 2015-12-09 住友電気工業株式会社 ダイヤモンド複合体およびそれから分離した単結晶ダイヤモンド、及びダイヤモンド複合体の製造方法
WO2014028831A1 (en) * 2012-08-17 2014-02-20 Gtat Corporation System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein
EP3054036B1 (en) * 2013-09-30 2021-03-03 Adamant Namiki Precision Jewel Co., Ltd. Diamond substrate manufacturing method
CN108908762A (zh) * 2018-06-15 2018-11-30 西安碳星半导体科技有限公司 Cvd生长宝石级厚单晶金刚石切割方法
CN110789011A (zh) * 2019-11-07 2020-02-14 北京昌日新能源科技有限公司 一种新型光伏用直角单晶硅片及其制造方法
CN111690981B (zh) * 2020-07-23 2021-08-03 太原理工大学 一种扩大单晶金刚石籽晶尺寸及数量的方法
CN111850682B (zh) * 2020-07-23 2021-09-07 太原理工大学 同时扩大单晶金刚石籽晶尺寸及数量的方法
PL4269004T3 (pl) * 2020-12-24 2025-03-03 Sumitomo Electric Hardmetal Corp. Sposób wytwarzania półproduktu narzędzia diamentowego i sposób określania dla diamentu monokrystalicznego
GB2609023A (en) * 2021-07-18 2023-01-25 Lusix Ltd Growing of diamonds
CN114232091B (zh) * 2021-12-27 2024-05-10 苏州贝莱克金刚石科技有限公司 大尺寸单晶金刚石及其制备方法
GB202305972D0 (en) 2023-04-24 2023-06-07 Element Six Tech Ltd Method of manufacturing single crystal diamonds

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103993A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンド単結晶成長方法
JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US5499601A (en) * 1993-01-14 1996-03-19 Sumitomo Electric Industries, Ltd. Method for vapor phase synthesis of diamond

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