JP2001093837A5 - - Google Patents

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Publication number
JP2001093837A5
JP2001093837A5 JP1999264706A JP26470699A JP2001093837A5 JP 2001093837 A5 JP2001093837 A5 JP 2001093837A5 JP 1999264706 A JP1999264706 A JP 1999264706A JP 26470699 A JP26470699 A JP 26470699A JP 2001093837 A5 JP2001093837 A5 JP 2001093837A5
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Japan
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substrate
plane
reference plane
thin film
semiconductor
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JP1999264706A
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English (en)
Japanese (ja)
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JP4274504B2 (ja
JP2001093837A (ja
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Priority to JP26470699A priority Critical patent/JP4274504B2/ja
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Publication of JP2001093837A5 publication Critical patent/JP2001093837A5/ja
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JP26470699A 1999-09-20 1999-09-20 半導体薄膜構造体 Expired - Fee Related JP4274504B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26470699A JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26470699A JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

Publications (3)

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JP2001093837A JP2001093837A (ja) 2001-04-06
JP2001093837A5 true JP2001093837A5 (https=) 2006-11-02
JP4274504B2 JP4274504B2 (ja) 2009-06-10

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JP26470699A Expired - Fee Related JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP3427047B2 (ja) * 1999-09-24 2003-07-14 三洋電機株式会社 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
EP1265273A4 (en) 2000-03-14 2009-05-06 Toyoda Gosei Kk METHOD OF MANUFACTURING A III-NITRIDE COMPOUND SEMICONDUCTOR AND III-NITRIDE COMPOUND SEMICONDUCTOR ELEMENT
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2003054937A1 (en) * 2001-12-20 2003-07-03 Matsushita Electric Industrial Co., Ltd. Method for making nitride semiconductor substrate and method for making nitride semiconductor device
KR20100020936A (ko) * 2007-07-12 2010-02-23 라티스 파워(지앙시) 코포레이션 파티션화된 기판 상에 제작되는 반도체 소자용 고품질 경계부 형성 방법
JP5204046B2 (ja) * 2009-06-25 2013-06-05 シャープ株式会社 窒化物半導体ウェハ、窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US9293625B2 (en) 2012-04-13 2016-03-22 Tandem Sun Ab Method for manufacturing a semiconductor device based on epitaxial growth
CN113314398B (zh) * 2021-05-25 2024-02-06 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜

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