JP2005306617A5 - - Google Patents

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Publication number
JP2005306617A5
JP2005306617A5 JP2004121442A JP2004121442A JP2005306617A5 JP 2005306617 A5 JP2005306617 A5 JP 2005306617A5 JP 2004121442 A JP2004121442 A JP 2004121442A JP 2004121442 A JP2004121442 A JP 2004121442A JP 2005306617 A5 JP2005306617 A5 JP 2005306617A5
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JP
Japan
Prior art keywords
zeta potential
dispersion
value
fine particles
diamond fine
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JP2004121442A
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English (en)
Japanese (ja)
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JP2005306617A (ja
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Priority to JP2004121442A priority Critical patent/JP2005306617A/ja
Priority claimed from JP2004121442A external-priority patent/JP2005306617A/ja
Publication of JP2005306617A publication Critical patent/JP2005306617A/ja
Publication of JP2005306617A5 publication Critical patent/JP2005306617A5/ja
Withdrawn legal-status Critical Current

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JP2004121442A 2004-04-16 2004-04-16 ダイヤモンド薄膜およびその製造方法 Withdrawn JP2005306617A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004121442A JP2005306617A (ja) 2004-04-16 2004-04-16 ダイヤモンド薄膜およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004121442A JP2005306617A (ja) 2004-04-16 2004-04-16 ダイヤモンド薄膜およびその製造方法

Publications (2)

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JP2005306617A JP2005306617A (ja) 2005-11-04
JP2005306617A5 true JP2005306617A5 (https=) 2007-06-07

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ID=35435798

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JP2004121442A Withdrawn JP2005306617A (ja) 2004-04-16 2004-04-16 ダイヤモンド薄膜およびその製造方法

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JP (1) JP2005306617A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009091234A (ja) * 2007-09-18 2009-04-30 Tokyo Univ Of Science 導電性ダイヤモンド膜が形成された基板及び導電性ダイヤモンド膜が形成された基板の製造方法
JP5334085B2 (ja) * 2007-11-19 2013-11-06 独立行政法人産業技術総合研究所 基板への種付け処理方法、ダイヤモンド微細構造体及びその製造方法
JP4984263B2 (ja) * 2008-09-17 2012-07-25 住友電工ハードメタル株式会社 ダイヤモンド膜及びその製造方法
US10584412B2 (en) * 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
CN109097754A (zh) * 2017-06-20 2018-12-28 深圳先进技术研究院 一种表面具有高致密纳米金刚石薄膜的工件及一种高致密纳米金刚石薄膜的制备方法
JP6825509B2 (ja) 2017-07-21 2021-02-03 株式会社Sumco ダイヤモンド積層シリコンウェーハの製造方法およびダイヤモンド積層シリコンウェーハ
KR102133963B1 (ko) * 2018-11-30 2020-07-15 한국과학기술연구원 다음극 직류전원 플라즈마 화학 증착 장치를 이용한 다이아몬드 단결정 성장 방법
CN111334779B (zh) * 2018-12-18 2023-08-15 深圳先进技术研究院 掺硼金刚石薄膜及其制备方法、油水分离元件、水处理电极及其制备方法与水处理装置
JP7172556B2 (ja) * 2018-12-19 2022-11-16 株式会社Sumco 多結晶ダイヤモンド自立基板の製造方法
AU2022398739A1 (en) * 2021-11-24 2024-05-30 Daicel Corporation Structure comprising diamond coating film, and method for manufacturing same
JPWO2023238391A1 (https=) * 2022-06-10 2023-12-14
CN116590695B (zh) * 2022-12-05 2025-07-18 浙江工业大学 高电导率高迁移率n型金刚石薄膜及其制备方法

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