JP2003502857A5 - - Google Patents

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Publication number
JP2003502857A5
JP2003502857A5 JP2001505042A JP2001505042A JP2003502857A5 JP 2003502857 A5 JP2003502857 A5 JP 2003502857A5 JP 2001505042 A JP2001505042 A JP 2001505042A JP 2001505042 A JP2001505042 A JP 2001505042A JP 2003502857 A5 JP2003502857 A5 JP 2003502857A5
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JP
Japan
Prior art keywords
sic
film
epitaxial
substrate
silicon carbide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001505042A
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English (en)
Japanese (ja)
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JP2003502857A (ja
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Publication date
Priority claimed from US09/339,510 external-priority patent/US6329088B1/en
Application filed filed Critical
Publication of JP2003502857A publication Critical patent/JP2003502857A/ja
Publication of JP2003502857A5 publication Critical patent/JP2003502857A5/ja
Pending legal-status Critical Current

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JP2001505042A 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層 Pending JP2003502857A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/339,510 1999-06-24
US09/339,510 US6329088B1 (en) 1999-06-24 1999-06-24 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
PCT/US2000/015155 WO2000079570A2 (en) 1999-06-24 2000-06-01 Silicon carbide epitaxial layers grown on substrates offcut towards <1100>

Publications (2)

Publication Number Publication Date
JP2003502857A JP2003502857A (ja) 2003-01-21
JP2003502857A5 true JP2003502857A5 (https=) 2009-05-28

Family

ID=23329332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001505042A Pending JP2003502857A (ja) 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層

Country Status (7)

Country Link
US (2) US6329088B1 (https=)
EP (1) EP1214190A4 (https=)
JP (1) JP2003502857A (https=)
KR (1) KR100716522B1 (https=)
CN (1) CN1164417C (https=)
AU (1) AU7699300A (https=)
WO (1) WO2000079570A2 (https=)

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JP2005079339A (ja) * 2003-08-29 2005-03-24 National Institute Of Advanced Industrial & Technology 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器
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EP1619276B1 (en) 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP2007182330A (ja) 2004-08-24 2007-07-19 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
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JP2006321707A (ja) * 2005-04-22 2006-11-30 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
WO2006138052A1 (en) * 2005-06-13 2006-12-28 Exxonmobil Chemical Patents Inc. Thermoplastic blend compositions
KR100711521B1 (ko) * 2005-12-20 2007-04-27 한국전기연구원 금속충전을 이용한 결함제거 에픽탁시 박막의 제조방법
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US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
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JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8574528B2 (en) 2009-09-04 2013-11-05 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
US20110265616A1 (en) * 2010-04-30 2011-11-03 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Ultra-pure, single-crystal sic cutting tool for ultra-precision machining
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US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP2014187113A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 気相成長装置および気相成長方法
JP6189131B2 (ja) 2013-08-01 2017-08-30 株式会社東芝 半導体装置およびその製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR101634557B1 (ko) 2015-06-11 2016-06-29 김용빈 조립식 돔 하우스
JP2017069239A (ja) * 2015-09-28 2017-04-06 新日鐵住金株式会社 炭化珪素のエピタキシャル成長方法
JP2016052994A (ja) * 2015-11-13 2016-04-14 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2018009518A1 (en) 2016-07-05 2018-01-11 Dentsply Sirona Inc. Multiple layered denture block and/or disk
JP7009147B2 (ja) 2017-09-29 2022-01-25 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置
JP7248539B2 (ja) * 2019-08-13 2023-03-29 株式会社日立製作所 圧力伝送装置および原子力発電プラント計測システム
RU2749573C9 (ru) * 2020-10-13 2021-08-17 Федеральное государственное бюджетное образовательное учреждение высшего образования "ДАГЕСТАНСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ" Способ получения тонких пленок карбида кремния на кремнии пиролизом полимерных пленок, полученных методом молекулярно-слоевого осаждения

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US4912064A (en) 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
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US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>

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