JP2003502857A5 - - Google Patents

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Publication number
JP2003502857A5
JP2003502857A5 JP2001505042A JP2001505042A JP2003502857A5 JP 2003502857 A5 JP2003502857 A5 JP 2003502857A5 JP 2001505042 A JP2001505042 A JP 2001505042A JP 2001505042 A JP2001505042 A JP 2001505042A JP 2003502857 A5 JP2003502857 A5 JP 2003502857A5
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JP
Japan
Prior art keywords
sic
film
epitaxial
substrate
silicon carbide
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Pending
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JP2001505042A
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English (en)
Japanese (ja)
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JP2003502857A (ja
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Publication date
Priority claimed from US09/339,510 external-priority patent/US6329088B1/en
Application filed filed Critical
Publication of JP2003502857A publication Critical patent/JP2003502857A/ja
Publication of JP2003502857A5 publication Critical patent/JP2003502857A5/ja
Pending legal-status Critical Current

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JP2001505042A 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層 Pending JP2003502857A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/339,510 US6329088B1 (en) 1999-06-24 1999-06-24 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
US09/339,510 1999-06-24
PCT/US2000/015155 WO2000079570A2 (en) 1999-06-24 2000-06-01 Silicon carbide epitaxial layers grown on substrates offcut towards <1100>

Publications (2)

Publication Number Publication Date
JP2003502857A JP2003502857A (ja) 2003-01-21
JP2003502857A5 true JP2003502857A5 (https=) 2009-05-28

Family

ID=23329332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001505042A Pending JP2003502857A (ja) 1999-06-24 2000-06-01 ＜１−１００＞方向にオフカットした基板上で成長させた炭化ケイ素エピタキシャル層

Country Status (7)

Country Link
US (2) US6329088B1 (https=)
EP (1) EP1214190A4 (https=)
JP (1) JP2003502857A (https=)
KR (1) KR100716522B1 (https=)
CN (1) CN1164417C (https=)
AU (1) AU7699300A (https=)
WO (1) WO2000079570A2 (https=)

Families Citing this family (59)

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JP2005079339A (ja) * 2003-08-29 2005-03-24 National Institute Of Advanced Industrial & Technology 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
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US8221549B2 (en) * 2005-04-22 2012-07-17 Bridgestone Corporation Silicon carbide single crystal wafer and producing method thereof
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US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
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JP4959763B2 (ja) 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8574528B2 (en) * 2009-09-04 2013-11-05 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
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JP2014187113A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 気相成長装置および気相成長方法
JP6189131B2 (ja) 2013-08-01 2017-08-30 株式会社東芝 半導体装置およびその製造方法
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KR101634557B1 (ko) 2015-06-11 2016-06-29 김용빈 조립식 돔 하우스
JP2017069239A (ja) * 2015-09-28 2017-04-06 新日鐵住金株式会社 炭化珪素のエピタキシャル成長方法
JP2016052994A (ja) * 2015-11-13 2016-04-14 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
EP3481327B1 (en) 2016-07-05 2026-02-11 Dentsply Sirona Inc. Multiple layered denture block and/or disk
JP7009147B2 (ja) 2017-09-29 2022-01-25 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置
JP7248539B2 (ja) * 2019-08-13 2023-03-29 株式会社日立製作所 圧力伝送装置および原子力発電プラント計測システム
RU2749573C9 (ru) * 2020-10-13 2021-08-17 Федеральное государственное бюджетное образовательное учреждение высшего образования "ДАГЕСТАНСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ" Способ получения тонких пленок карбида кремния на кремнии пиролизом полимерных пленок, полученных методом молекулярно-слоевого осаждения

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US5011549A (en) 1987-10-26 1991-04-30 North Carolina State University Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
US4912064A (en) 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
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JP2000001388A (ja) 1998-06-08 2000-01-07 Azuma:Kk ガーデン用肥料
JP3915252B2 (ja) * 1998-06-09 2007-05-16 富士電機デバイステクノロジー株式会社 炭化けい素半導体基板の製造方法
US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>

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